Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature

Electrochromic molybdenum oxide (MoO₃) thin films were prepared by electron beam evaporation technique using the dry MoO₃ pellets. The films were deposited on glass and fluorine doped tin oxide (SnO₂:F or FTO) coated glass substrates at different substrate temperatures like room temperature (RT, 30 °C), 100 °C and 200 °C. The influence of substrate temperature on the structural, surface morphological and optical properties of the films has been studied. The X-ray diffraction analysis showed that the films are having orthorhombic phase MoO₃ (α-MoO₃) with 〈1 1 0〉 preferred orientation. The laser Raman scattering spectrum shows the polycrystalline nature of MoO₃ films deposited at 200 °C. The Raman-active band at 993 cm⁻¹ is corresponding to Mo–O stretching mode that is associated with the unique character of the layered structure of orthorhombic MoO₃. Needle—like morphology was observed from the SEM analysis. The energy band gap of MoO₃ films was evaluated which lies between 2.8 and 2.3 eV depending on the substrate temperature and substrates. The decrease in band gap value with increasing substrate temperature is owing to the oxygen-ion vacancies. The absorption edge shift shows the coloration effect on the films.     

Growth and characterization of nanostructured anatase phase TiO<Subscript>2</Subscript> thin films prepared by DC reactive unbalanced magnetron sputtering

Titanium dioxide thin films were deposited on three different unheated substrates by unbalanced magnetron sputtering. The effects of the sputtering current and deposition time on the crystallization of TiO₂ thin films were studied. The TiO₂ thin films were deposited at three sputtering current values of 0.50, 0.75, and 1.00 A with different deposition times of 25, 35, and 45 min, respectively. The surface morphology of the films was investigated by atomic force microscopy (AFM). The structure was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The film thickness was determined by field emission scanning electron microscopy (FE-SEM), and the optical property was evaluated with spectroscopic ellipsometry. The results show that polycrystalline anatase films were obtained at a low sputtering current value. The crystallinity of the anatase phase increases as the sputtering current increases. Furthermore, nanostructured anatase phase TiO₂ thin films were obtained for all deposition conditions. The grain size of TiO₂ thin films was in the range 10–30 nm. In addition, the grain size increases as the sputtering current and deposition time increase.     

Effect of Cd and Pb impurities on the optical properties of?fresh?evaporated amorphous (As2Se3)90Ge10 thin films

Transmission spectra (400–1500 nm) of thermally evaporated amorphous [(As₂Se₃)₉₀Ge₁₀]₉₅M₅ thin films have been analyzed to study the effect of impurities (M = Cd and Pb) on their optical properties. The refractive index increases with addition of metal impurities. The dispersion of refractive index has been studied using Wemple–DiDomenico single oscillator model. The optical gap has been estimated using Tauc’s extrapolation and was found to decrease with the addition of metal impurities from 1.46 to 1.36 eV (Cd) and 1.41 eV (Pb) with an uncertainty of ±0.01 eV. The change in optical properties with metal impurities has been explained on the basis of density, polarizability and bond energy of the system.     

Application of MEH-PPV/SnO<Subscript>2</Subscript> bilayer as hybrid solar cell

The effects of oxygen content in the sputtering gas on the crystallographic and optoelectronic properties of 210 nm-thick Zr–doped In₂O₃ (Zr–In₂O₃) films by rf magnetron sputtering were initially studied. The results of X-ray diffraction show that the Zr–In₂O₃ films grown on glass substrates exhibit mixed crystallographic orientations. Moreover, the Zr–In₂O₃ film grown in an Ar atmosphere promotes the appearance of crystallographic orientation of (222). The surface of the Zr–In₂O₃ film becomes rougher as the oxygen content in the sputtering gas decreases; the current images obtained by conductive atomic force microscopy reveal that the surfaces of the Zr–In₂O₃ films exhibit a distribution of coexisting conducting and nonconducting regions, and that the area of the nonconducting surface increases with the oxygen content in the sputtering gas. The resistivity is minimized to 3.51×10⁻⁴ Ω cm when the Zr–In₂O₃ film is grown in an Ar atmosphere and the average transmittance in the visible light region is ∼85%. The optical band gap decreases as the oxygen content in the sputtering gas increases.     

Characterization of Cd1?xMgxTe film and plasma diagnostic studies by optical emission spectroscopy during sputtering

Cd_1−x Mg _x Te is an attractive II–VI semiconductor alloy candidate for obtaining energy gaps wider than 1.5 eV of CdTe needed for the top junction absorber layer in a polycrystalline thin-film tandem solar cell. We have shown that these alloy films can easily be prepared by sputtering, however, the sputtering rate is substantially lower than for CdTe and the attainable cell performance has been poor, both before and after activation treatments with chlorine-containing vapors. In this work we have applied optical emission spectroscopy (OES) using selected peaks of ArII, CdII, MgI, TeII and correlated the results with crystallographic and morphological characteristics of the deposited films. Results were obtained as a function of rf sputter power and sputter gas pressure.     

Post-annealing effect upon optical properties of electron beam evaporated molybdenum oxide thin films

Molybdenum oxide (MoO₃) thin films were deposited by electron beam evaporation. The chemical composition, microstructure, optical and electrical properties of MoO₃ thin films depend on the annealing temperature and ambient atmosphere. X-ray diffraction (XRD) shows that crystalline MoO₃ films can be obtained at various post-annealing temperatures from 200 to 500 °C in N₂ and O₂. X-ray photoelectron spectroscopy (XPS) results reveal that the O-1s emission peak was shifted slightly toward lower binding energies as the annealing temperature in N₂ was increased. The oxygen vacancies and conductivity of MoO₃ film increased with the annealing temperature. However, when the MoO₃ films were annealed in an atmosphere of O₂, the optical transmission, the O/Mo ratio and the photon energy increased with the annealing temperature. The results differ from those for films annealed in a N₂ atmosphere.     

Optical properties of glasses in the Li2O–MoO3–P2O5 system

Glasses xLi₂O–(50-x)(MoO₃)₂–50P₂O₅ with x = 10, 20, 30, and 40 mol% were prepared and their optical and electrical properties were investigated. Analysis of the IR spectra revealed that the Li⁺ ions act as a glass modifier that enter the glass network by breaking up other linkages and creating non-bridging oxygens in the network. The optical absorption edge of the glasses was measured for specimens in the form of thin blown films and the optical absorption spectra of those were recorded in the range 200–800 nm. From the optical absorption edges studies, the optical band gap (E _opt) and the Urbach energy (E _e) values have been evaluated by following the available semi-empirical theories. The linear variation of (αhν)^1/2 with hν, is taken as evidence of indirect interband transitions. The E _opt values were found to decrease with increasing Li₂O content by causing increase in the number of non-bridging oxygens in network. The Urbach tail analysis gives the width of localized states between 0.48 and 0.74 eV.     

The development of the physical and electrical characteristics of multi-layer TiO<Subscript>2</Subscript>–W–TiO<Subscript>2</Subscript> thin films

In this study, two different thin films, TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films (W, tungsten), are prepared by RF magnetron sputtering onto glass substrates. The crystal structure, morphology, and transmittance of TiO₂ and TiO₂–W–TiO₂ multi-layer thin films are investigated by X-ray diffraction, SEM, and UV-Vis spectrometer, respectively. The amorphous, rutile, and anatase TiO₂ phases are observed in the TiO₂ thin film and in the TiO₂–W–TiO₂ multi-layer thin films. The deposition of tungsten as the inter-layer will have large effect on the transmittance and phase ratios of rutile and anatase phases in the TiO₂–W–TiO₂ multi-layer thin films. The crystal intensities of amorous TiO₂ will decrease as the tungsten is used as the middle layer in the multi-layer structure. The band gap energy values of TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films are evaluated from (αhν)^1/2 versus energy plots, and the calculated results show that the energy gap decreases from 3.21 eV (TiO₂ thin film) to 3.08∼3.03 EV (TiO₂–W–TiO₂ multi-layer thin films).     

Solid-state reaction synthesis of boron carbonitride nanotubes

ZnO films were deposited by RF magnetron sputtering at the substrate temperature of 120∼420°C. XRD measurements revealed the improvement of crystalline quality and grain size of the films with substrate temperature. The dielectric function of the films was determined by fitting the experimental transmission spectra with Tauc–Lorentz (TL) model and a single Lorentzian oscillator (SLO) dispersion function in the energy range of 1∼5 eV. The optical properties of the ZnO films strongly depended on the substrate temperature. The optical band gap and the Penn gap of the ZnO films increased with the substrate temperature. The band gap of the ZnO films indicated a direct interband transition between the valence and conduction band, and the change of the in-plane film stress promoted the enhancement of the band gap. These results of the optical properties of the ZnO films might be very meaningful to the application in the window design in solar cells.     

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO₃) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10⁻⁵–8 × 10⁻⁴ mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10⁻⁵ mbar showed the presence of Mo⁶⁺ and Mo⁵⁺ oxidation states of MoO₃ and MoO_3−x. The films deposited at oxygen partial pressure of 2 × 10⁻⁴ mbar showed Mo⁶⁺ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10⁻⁴ mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO₃. The electrical conductivity of the films decreased from 3.6 × 10⁻⁵ to 1.6 × 10⁻⁶ Ω⁻¹ cm⁻¹, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10⁻⁵ to 8 × 10⁻⁴ mbar, respectively.     

Optimization of F-doped SnO2 electrodes for organic photovoltaic devices

Fluorine-doped tin oxide (FTO) thin films have been investigated as an alternative to indium tin oxide anodes in organic photovoltaic devices. The structural, electrical, and optical properties of the FTO films grown by pulsed laser deposition were studied as a function of oxygen deposition pressure. For 400 nm thick FTO films deposited at 300°C and 6.7 Pa of oxygen, an electrical resistivity of 5×10⁻⁴ Ω-cm, sheet resistance of 12.5 Ω/□, average transmittance of 87% in the visible range, and optical band gap of 4.25 eV were obtained. Organic photovoltaic (OPV) cells based on poly(3-hexylthiophene)/[6,6]-phenyl-C₆₁-butyric acid methyl ester bulk heterojunctions were prepared on FTO/glass electrodes and the device performance was investigated as a function of FTO film thickness. OPV cells fabricated on the optimum FTO anodes (∼300–600 nm thick) exhibited power conversion efficiencies of ∼3%, which is comparable to the same device made on commercial ITO/glass electrodes (3.4%).     

Pulsed laser deposition of molybdenum oxide thin films

Thin films of molybdenum oxide were deposited in vacuum by pulsed laser ablation using a xenon fluoride (351 nm) and a krypton fluoride (248 nm) excimer lasers. The films were deposited on unheated substrates and were post-annealed in air in the temperature range 300–500°C. The structural, morphological, chemical, and optical properties of the films were studied. As-deposited films were found to be dark. The transparency of the films was improved with annealing in air. The films were polycrystalline with diffraction peaks that belong to the orthorhombic phase of MoO₃. The surface morphology of the films showed a layered structure. Both the grain size and surface roughness increased with annealing temperature. The stoichiometry of the films improved upon annealing in air, with the best stoichiometry of MoO_2.95 obtained for films deposited by the XeF laser and annealed at 400°C. Similarly, the best transparency, with a transmittance exceeding 80%, was obtained with the films annealed in the temperature range 400–450°C.     

Optical properties of molybdenum oxide thin films deposited by?chemical vapor transport of MoO3(OH)2

MoO₃ thin films are useful for optical devices due to their electrochromic properties. In this study, deposition of MoO₂ thin films was successfully accomplished by chemical vapor transport (CVT) of volatile MoO₃(OH)₂. Subsequently, a MoO₃ thin film was obtained by annealing of the deposited MoO₂ at 400°C in an O₂ atmosphere. As annealing commenced, the optical transmittance of the films increased and their absorbance peaks were broadened and red-shifted due to reduced oxygen vacancy. Thus, the molybdenum oxide thin films can successfully be deposited using the CVT technique.     

Self-assembly and photoluminescence of molybdenum oxide nanoparticles

We report on the synthesis of self-assembled hillock shaped MoO₃ nanoparticles on thin films exhibiting intense photoluminescence (PL) by RF magnetron sputtering and subsequent oxidation. MoO₃ nanocrystals of size ∼29 nm are self-assembled into uniform nanoparticles with diameter ∼174 nm. The mechanism of the intense PL behaviour from MoO₃ nanoparticles is investigated and systematically discussed. The films exhibit two bands; a near-band-edge UV emission and a defect related deep level visible emission. The enhancement in PL intensity with annealing is not only by the improvement in crystallinity and grain size but also by the increase in the rms surface roughness and porosity of the films. The PL intensity is thermally activated with activation energy 1.07 and 0.87 eV respectively for the UV and visible emissions. The UV band exhibits a blue shift according to the band gap with increasing post-annealing temperatures, which suggests the possibility to tune the UV photoluminescence band by varying the oxidation temperature.     

Optical and IR study of Li2O–CuO–P2O5 glasses

Infrared (IR) and UV spectra of ternary Li₂O–CuO–P₂O₅ glasses in two series Li₂O(65−X)%–CuO(X%)–P₂O₅(35%), X = 20, 30, 40 and Li₂O(55−X)%–CuO(X%)–P₂O₅(45%), X = (10, 20, 30) were studied. Infrared (IR) investigations showed the metaphosphate and pyrophosphate structures and with increase of CuO content in metaphosphate glass, the skeleton of metaphosphate chains is gradually broken into short phosphate groups such as pyrophosphate. IR spectra showed one band at about 1,220 and 1,260 cm⁻¹ for P₂O₅(35%) and P₂O₅(45%) series, respectively, assigned to P=O bonds. For CuO additions ≤20 mol%, the glasses exhibit two bands in the frequency range 780–720 cm⁻¹ which are attributed to the presence of two P–O–P bridges in metaphosphate chain. But for CuO addition ≥30 mol%, the glasses exhibit only a single band at 760 cm⁻¹ which is assigned to the P–O–P linkage in pyrophosphate group. In optical investigations, absorption coefficient versus photon energy showed three regions: low energy side, Urbach absorption, and high energy side. In Urbach’s region, absorption coefficient depends exponentially on the photon energy. At high energy region, optical gap was calculated and investigations showed indirect transition in compounds and decreases in optical gap with increases of copper oxides contents that is because of electronic transitions and increasing of nonbridging oxygen content.     

Substrate temperature influenced structural, electrical and optical properties of dc magnetron sputtered MoO3 films

Molybdenum oxide (MoO₃) films were deposited on glass and (1 1 1) silicon substrates by sputtering of metallic molybdenum target in an oxygen partial pressure of 2 × 10⁻⁴ mbar and different substrate temperatures in the range 303-623 K using dc magnetron sputtering technique. X-ray photoelectron spectrum of the films formed at 303 K showed asymmetric Mo 3d_5/2 and Mo 3d_3/2 peaks due to the presence of mixed oxidation states of Mo⁵⁺ and Mo⁶⁺ while those deposited at substrate temperatures ≥473 K were in Mo⁶⁺ oxidation state of MoO₃. The films formed at substrate temperatures ≥473 K were polycrystalline in nature with orthorhombic α-phase MoO₃. Fourier transform infrared spectra of the films showed an absorption band at 1000 cm⁻¹ correspond to the stretching vibration of MoO, the characteristic of the α-MoO₃ phase. The electrical resistivity increased from 3.3 × 10³ to 8.3 × 10⁴ Ω cm with the increase of substrate temperature from 303 to 473 K respectively due to improvement in the crystallinity of the films. Optical band gap of the films increased from 3.03 to 3.22 eV with the increase of substrate temperature from 303 to 523 K.     

Effect of environment and heat treatment on the optical properties of RF-sputtered SnO2 thin films

Thin films of SnO₂ were deposited by RF-magnetron sputtering on quartz substrates at room temperature in an environment of Ar and O₂. The XRD pattern shows amorphous nature of the as-deposited films. The optical properties were studied using the reflectance and transmittance spectra. The estimated optical band gap (E_g) values increase from 4.15 to 4.3 eV as the Ar gas content decreases in the process gas environment. The refractive index exhibits an oscillatory behavior that is strongly dependent on the sputtering gas environment. The Urbach energy is found to decrease with increase in band gap. The band gap is found to decrease on annealing the film. The role of oxygen defects is explored in explaining the variation of optical parameters.     

Study of optical properties and molecular structure of plasma polymerized diethylene glycol dimethyl ether

This paper deals with plasma polymerization processes of diethylene glycol dimethyl ether. Plasmas were produced at 150 mtorr in the range of 10 W to 40 W of RF power. Films were grown on silicon and quartz substrates. Molecular structure of plasma polymerized films and their optical properties were analyzed by Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy. The IR spectra show C–H stretching at 3000–2900 cm^-1, C=O stretching at 1730–1650 cm^-1, C–H bending at 1440–1380 cm^-1, C–O and C–O–C stretching at 1200–1000 cm^-1. The concentrations of C–H, C–O and C–O–C were investigated for different values of RF power. It can be seen that the C–H concentration increases from 0.55 to 1.0 au (arbitrary unit) with the increase of RF power from 10 to 40 W. The concentration of C–O and C–O–C decreases from 1.0 to 0.5 au in the same range of RF power. The refraction index increased from 1.47 to 1.61 with the increase of RF power. The optical gap calculated from absorption coefficient decreased from 5.15 to 3.35 eV with the increase of power. Due to its optical and hydrophilic characteristics these films can be applied, for instance, as glass lens coatings for ophthalmic applications.     

Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment

Al-doped zinc oxide (AZO) films are prepared on quartz substrates by dual-ion-beam sputtering deposition at room temperature (∼25°C). An assisting argon ion beam (ion energy E _i =0–300 eV) directly bombards the substrate surface to modify the properties of AZO films. The effects of assisted-ion beam energy on the characteristics of AZO films were investigated in terms of X-ray diffraction, atomic force microscopy, Raman spectra, Hall measurement and optical transmittance. With increasing assisting-ion beam bombardment, AZO films have a strong improved crystalline quality and increased radiation damage such as oxygen vacancies and zinc interstitials. The lowest resistivity of 4.9×10⁻³Ω cm and highest transmittance of above 85% in the visible region were obtained under the assisting-ion beam energy 200 eV. It was found that the bandgap of AZO films increased from 3.37 to 3.59 eV when the assisting-ion beam energy increased from 0 to 300 eV.     

Effect of RF power and sputtering pressure on the structural and optical properties of TiO2 thin films prepared by RF magnetron sputtering

TiO₂ thin films were deposited onto quartz substrates by RF magnetron sputtering. The samples deposited at various RF powers and sputtering pressures and post annealed at 873 K, were characterized using X-ray diffraction (XRD), micro Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectrum indicates that the films are amorphous-like in nature. But micro-Raman analysis shows the presence of anatase phase in all the samples. At low sputtering pressure, increase in RF power favors the formation of rutile phase. Presence of oxygen defects, which can contribute to PL emission is evident in the XPS studies. Surface morphology is much affected by changes in sputtering pressure which is evident in the SEM images. A decrease in optical band gap from 3.65 to 3.58 eV is observed with increase in RF power whereas increase in sputtering pressure results in an increase in optical band gap from 3.58 to 3.75 eV. The blue shift of absorption edge in all the samples compared to that of solid anatase is attributed to quantum size effect. The very low value of extinction coefficient in the range 0.0544-0.1049 indicates the excellent optical quality of the samples. PL spectra of the films showed emissions in the UV and visible regions.