Driven injection of a polymer into a spherical cavity: A Langevin dynamics simulation study

The injection of a self-avoiding flexible polymer into a spherical cavity under a driving force is studied by using Langevin dynamics simulation. For given polymer length (N) and driving force (f), the polymer can be completely injected into the cavity only when the radius of the cavity is larger than a transition radius (R_eC). The dependence of R_eC on N and f can be described by a scaling relation R_eC∝N^1/3f^-δ. The value of δ changes from 4/15 in the small f region to 1/6 in the moderate f region due to the screening of the excluded-volume interaction between monomers. We find the complete injection time (τ) decreases monotonously with increasing the cavity radius or decreasing the polymer length. The simulation results are in good agreement with the theoretical predictions from the free energy analysis and a simple kinetic model.     

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (R_on,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N⁺-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N_d) and reshape the electric field distribution. The highly doped N⁺-layer under the high-K dielectric acts as a low resistance path to reduce the R_on,sp. The new device with the high breakdown voltage (BV), the low R_on,sp, and the excellent figure of merit (FOM=BV²/R_on,sp) is obtained. The BV of HKLR LDMOS is 534 V, R_on,sp is 70.6 mΩ·cm², and FOM is 4.039 MW·cm^-2.     

Hyperscaling for polymer rings

The statistics of a long closed self-avoiding walk (SAW) or polymer ring on a d-dimensional lattice obeys hyperscaling. The combination p_NR²_N^d/2μ^−N (where p_N is the number of configurations of an oriented and rooted N-step ring, R²_N a typical average size squared, and μ the SAW effective connectivity constant of the lattice) is equal for N å ∞ to a lattice-dependent constant times a universal amplitude A(d). The latter amplitude is calculated directly from the minimal continous Edwards model to second order in 4 − d. The case of rings at the upper critical dimension d = 4 is also studied. The results are checked against field-theoretical calculations, and former simulations. As a consequence, we show that the universal constant λ appearing to second order in in all critical phenomena amplitude ratios is equal to .     

Branes, geometry and N = 1 duality with product gauge groups of SO and Sp

We study N = 1 dualities in four-dimensional supersymmetric gauge theories as the world volume theory of D4 branes with one compact direction in type IIA string theory. We generalize the previous work for SO(N_c1) × Sp(N_c2) with the superpotential W = TrX⁴ to the case of W = TrX^4(k+1) in terms of brane configuration. We conjecture that the new dualities for the product gauge groups of SO(N_c1) × Sp(N_c2) × SO(N_c3), SO(N_c1) × Sp(N_c2) × SO(N_c3) × Sp(N_c4) and higher multiple product gauge groups can be obtained by reversing the ordering of NS5 branes and D6 branes while preserving the linking numbers. We also describe the above dualities in terms of wrapping D6 branes around 3-cycles of Calabi-Yau threefolds in type IIA string theory. The theory with adjoint matter can be regarded as taking multiple copies of NS5 brane in the configuration of brane or geometric approaches.     

级联式平面抛物面型X射线组合折射透镜的设计与制作

X射线组合折射透镜(CRL)已逐步成为同步辐射光源下X射线聚焦光学器件的标准配件之一,它具有结构紧凑、易调节校准、适用光子能量范围大等优点.本文设计了一种级联式平面抛物面型CRL,它将N1个具有较大抛物面几何孔径(R0)的折射单元I与N2个具有较小抛物面顶点曲率半径(R)的折射单元II级联,以解决常规CRL设计过程中焦斑尺寸与透过率的矛盾.采用PMMA材料,利用LIGA技术制作了一组级联式平面抛物面型CRL,其中折射单元I的主要结构参数为N1=15,R1=200μm,2R01=564μm;折射单元II的主要结构参数为N2=20,R2=50μm,2R02=140μm.在上海光源同步辐射线束上,所制作的级联式平面抛物面型CRL实现了对初始光斑尺寸为200μm×100μm的入射X射线的一维聚焦,测试得到的焦距为1.052 m,横向焦斑尺寸为24.9μm@8 keV,透过率为2.19%.     

Universal enveloping algebra and differential calculi on inhomogeneous orthogonal q-groups

We review the construction of the multiparametric quantum group ISO_q,r(N) as a projection from SO_q,r (N + 2) and show that it is a bicovariant bimodule over SO_q,r(N). The universal enveloping algebra U_q,r(iso(N)), characterized as the Hopf algebra of regular functionals on ISO_q,r(N), is found as a Hopf subalgebra of U_q,r(so(N + 2)) and is shown to be a bicovariant bimodule over U_q,r(so(N)).

An R-matrix formulation of U_q,r(iso(N)) is given and we prove the pairing U_q,r(iso(N)) — ISO_q,r(N)). We analyze the subspaces of U_q,r(iso(N)) that define bicovariant differential calculi on ISO_q,r(N).     

Ge-Sb-Se硫系玻璃的折射率和热光系数

Ge-Sb-Se硫系玻璃被认为是极佳的红外传输材料和有潜力的非线性光学材料.在光学设计中,玻璃的线性折射率(n)及其热光系数(ζ)是关键技术参数.以预测和调控Ge-Sb-Se玻璃的n和ζ为目的,考察了玻璃的n,ζ,密度(d)和体积膨胀系数(β)与化学参数dSe和拓扑网络结构参数r的内在联系.研究发现,玻璃的n随d的增加而增大;ζ随β的增大而近似线性减小;β随dSe的减小或r的增大而减小;当Ge含量固定时, d随dSe的减小或r的增大而增大,当Sb含量固定时, d在dSe=0时具有最小值.基于实测d和n,拟合获得了Ge, Sb和Se元素在2—12μm波段的摩尔折射度(R_i),分别为R_(Ge)=10.16—10.50 cm~3/mol,RSb=16.71—17.08 cm~3/mol和RSe=11.15—11.21 cm~3/mol,根据d和R_i计算得到的n与实测值的偏差小于1%.基于实测ζ和β,拟合得到了Ge, Sb和Se元素在2—12μm波段的摩尔折射度温度系数(φ_i),分别为φ_(Ge)=21.1—22.6 ppm/K,φ_(Sb)=7.2—8.4 ppm/K和φ_(Se)=90.2—94.2 ppm/K,根据β和φ_i计算得到的ζ与实测值的偏差小于6 ppm/K.     

Cu1-xHxZr2(PO4)3中Cu2+的EPR谱和局域结构研究

本文采用Cu²⁺斜方对称电子顺磁共振（EPR）参量的高阶微扰公式计算了晶体Cu_1-xH_xZr₂（PO₄）₃中Cu²⁺的EPR参量（g因子和超精细结构常数A因子）．计算结果表明,晶体Cu_1-xH_xZr₂（PO₄）₃中[CuO₆]^10-基团的Cu-O键长分别为R_||≈0.241 nm,R_⊥≈0.215 nm,平面键角τ≈80.1°;由于对称性降低,中心金属离子基态²A_1g（θ）和²A_1g（ε）有一定程度混合,混合系数α≈0.995．所得EPR谱图的理论计算值与实验数据符合得很好．     

Thermodynamics of binary liquid mixtures: application of the Prigogine–Flory–Patterson theory to excess molar volumes of acetonitrile+1-alkanol systems

Excess molar volumes of {(1−x_A)CH₃(CH₂)_n−1OH+x_ACH₃CN} for n=1, 2, 3 or 4 as a function of composition under atmospheric pressure at 288.15, 293.15, 298.15 and 303.15 K have been used to test the applicability of the Prigogine–Flory–Patterson theory. According to the model, interactional contribution is the most important one to explain the V_m^E behavior. Good agreement is only achieved for the mixtures containing methanol (C₁) or 1-butanol (C₄). For the mixtures containing ethanol (C₂) and 1-propanol (C₃), which show an S-shaped V_m^E behavior, the correlation fails.     

Electrical conductances of sodium bromide and sodium tetraphenylborate in 2-ethoxyethanol + water mixtures at 308.15, 313.15, 318.15 and 323.15 K

The electrical conductances of the solutions of sodium bromide (NaBr) and sodium tetraphenylborate (NaBPh₄) in 2-ethoxyethanol + water mixed solvent media containing 0.25, 0.50 and 0.75 mass fractions of 2-ethoxyethanol (w₁) have been reported at 308.15, 313.15, 318.15, and 323.15 K. The conductance data have been analyzed by the 1978 Fuoss conductance–concentration equation in terms of the limiting molar conductance (Λ⁰), the association constant (K_A) and the association diameter (R). Of the two electrolytes investigated here, sodium bromide exists essentially in the form of free ions in aqueous 2-ethoxyethanol solutions over the entire temperature range investigated. However, slight ionic association was observed for sodium tetraphenylborate—the extent of which increases with increasing amount of 2-ethoxyethanol in the present mixed solvent media. The solvations of the bromide ion and of the sodium ion were found to be gradually weakened as the 2-ethoxyethanol content of the medium increases. Furthermore, the limiting molar conductivity values of the two electrolytes increase as the temperature increases in all 2-ethoxyethanol + water mixtures which have been described by polynomial equations.     

Swampland dS conjecture in mimetic f(R,T) gravity

In this paper, we study a theory of gravity called mimetic f(R, T) in the presence of swampland dS conjecture. For this purpose, we introduce several inflation solutions of the Hubble parameter H(N) from f(R, T) = R + δT gravity model, in which R is Ricci scalar, and T denotes the trace of the energy–momentum tensor. Also, δ and N are the free parameter and a number of e-fold, respectively. Then we calculate quantities such as potential, Lagrange multiplier, slow-roll, and some cosmological parameters such as n_s and r. Then we challenge the mentioned inflationary model from the swampland dS conjecture. We discuss the stability of the model and investigate the compatibility or incompatibility of this inflationary scenario with the latest Planck observable data.     

The bose form of two-dimensional quantum chromodynamics

By means of a special choice of gauge QCD₂ [SU(N)] with one flavor of quarks is recast into the Bose form. Weak (g m) and strong (gm) coupling regimes are studied. The former is shown to be the SU(N)-symmetric confining phase in which bound states possess stringlike configurations with strings being represented by electric vortex lines; the ordinary mesons and baryons appear as longitudinal modes of electric strings. The strong coupling regime describes the Higgs phase with the residual symmetry [U(1)]^N−1 S_N where the left and right factors are the maximal abelian subgroup of SU(N) and the permutation group of N quarks, respectively; the particle spectrum consists of S_N multiplets and the [Uw(1)]^N−1 charges are trapped.     

The ΔNγ electromagnetic transition form factors GM(q) and GE(q)

A parameter-free, nonperturbative calculation of the ΔNγ electromagnetic transition amplitudes GM*(q2), GE*(q2), and the resonant multipole ratio REM(q2)≡E1+3/2(q2)/M1+3/2(q2) is performed in terms of the well-known nucleon isovector Sachs form factor GMV. Our methods are fully relativistic with conservation of the electromagnetic current guaranteed. We find that GM*(q2) decreases more rapidly than the nucleon dipole form factor when −q21 GeV2/c2 and that REM(q2) remains small even for very high four-momentum transfer implying that the perturbative QCD prediction REM(q2)→1 is purely asymptotic and is valid only for extremely high |q2|.     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.     

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.     

Evaluation of the diffusion length of minority carriers in bulk GaAs

The diffusion length of minority charge carriers has been investigated in LEC GaAs, silicon-doped with doping density N_D - N_A ranging from 10¹⁶ to 10¹⁸ cm^-3, by surface photovoltage (SPV) and electron-beam-induced current (EBIC) of scanning electron microscopy (SEM) measurements. Au Schottky diodes have been evaporated along the diameter of wafers cut from different doping density ingots to determine the variation of minority carrier diffusion length with both the radial position on the slice and the carrier concentration. The diffusion length values obtained by optical and electron excitation enhance systematic differences, which can be explained by the different surface recombination weight in the carrier generation volume and by the injection level, too. In all the examined samples an M-shaped radial variation of the diffusion length has been observed; on the other hand, the mean value of L_p increases from 0.5 to 7 μm when the doping concentration increases. The authors correlate this distribution to the electrical inhomogeneity induced by native defects and associated recombination centres. The role of the dislocations, which induce two competitive effects, i.e. an enhanced recombination probability and a precipitate condensation, is here discussed.     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.     

Laser ablated bismuth cuprate thin films preparation and effect of oxygen nonstoichiometry upon superconductivity

Thin films of Bi₂Sr₂CaCu₂O₈ and (Bi, Pb)₂Sr₂Ca₂Cu₃O₁₀ have been prepared on monocrystalline (100) MgO substrates, using a laser ablation method with post annealing treatment. The influence of substrate temperature and oxygen pressure during deposition were investigated. SEM observations, EDS analysis, electric and magnetic measurements have been used to characterize the films. Superconducting “2212” films, with T_c(R = 0) at 80–83 K and J_c (50 K) up to 5 × 10⁵ A/cm², have been currently achieved, while Pb-doped “2223” films exhibit T_c as high as 110 K with J_c = 5 × 10⁴ A/cm² at 77 K. The effect of annealing at low temperature (350°C) in an argon flow has been studied for the 2212 phase, it shows the influence of the oxygen non-stoichiometry, i.e. of the hole carrier density upon T_c's which can be measured up to 89 K (zero resistance).     

Effects of 230 MeV Au irradiation on Bi2Sr2CaCu2Ox

Bi₂Sr₂CaCu₂O_x tapes were irradiated using 230 MeV Au¹⁴⁺ ions. Columnar defects were presumably produced due to irradiation. Zero-field-cooling (ZFC) magnetization increased up to a fluence of 1.6 × 10¹¹ Au⁺/cm², but field-cooling (FC) magnetization decreased, indicating the strong pinning effects resulting from the columnar defects. The critical current density as well as the irreversibility field, obtained from the hysteresis loops, were enhanced. Irreversibility fields are fitted by H_irr = A exp(−T/T_A). An effective activation energy for flux motion was obtained from the measurements of magnetization relaxation. The features of flux pinning as a result of the columnar defects were compared with those of point defects brought about by 120 MeV O⁷⁺ irradiation.