O掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了O原子不同比例(12.5％,8.33％和6.25％)掺杂MgF2晶体的几何结构、电子结构和光学性质.通过对比发现,由于O原子的掺入,体系的禁带宽度减小,材料呈现半金属性.计算也表明,O掺杂对静态介电常数和光吸收系数有重要调制作用,同时也给出了体系性质变化的...     

Cu掺杂MgF2晶体的电子结构及光学特性

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了纯的MgF2晶体和掺杂不同原子分数(2.08%,4.16%,6.24%)Cu的MgF2晶体结构、电学性质以及光学性质.结果表明:Cu的掺入导致MgF2晶体禁带宽度逐渐变窄,并且Cu掺杂使得MgF2晶体折射率和吸收峰增加,特别是在4eV附近区域出现了新吸收峰.同时也给出了引起体系性质变化的物理机制,Cu掺杂MgF2晶体在光电化学方面有着潜在的应用价值.     

Lu掺杂AlN的电子结构和光学性质的第一性原理研究

为了探索 AlN在光电器件中的潜在应用,采用第一性原理计算了不同 Lu掺杂浓度(以原子分数 x表示)的 AlN(Al_1-xLu_xN)的电子结构和光学性质。研究结果表明,Al_1-xLu_xN的超胞体积随着Lu掺杂浓度的增加而增加,而带隙则相反。Al_1-xLu_xN的静态介电常数在低能区随掺杂浓度的提高而提高,随后逐渐趋向一致。随着Lu掺杂浓度的增加,反射率和吸收系数的峰值强度降低,峰值向较低能量方向移动。Al_1-xLu_xN的能量损失光谱表现出明显的等离子体振荡特性,且峰值低于本征AlN。Al_1-xLu_xN的光电导率在低能区随能量的增加而急剧增加。     

Lu掺杂AlN的电子结构和光学性质的第一性原理研究

为了探索AlN在光电器件中的潜在应用,采用第一性原理计算了不同Lu掺杂浓度(以原子分数x表示)的AlN(Al_1-xLu_xN)的电子结构和光学性质。研究结果表明,Al_1-xLu_xN的超胞体积随着Lu掺杂浓度的增加而增加,而带隙则相反。Al_1-xLu_xN的静态介电常数在低能区随掺杂浓度的提高而提高,随后逐渐趋向一致。随着Lu掺杂浓度的增加,反射率和吸收系数的峰值强度降低,峰值向较低能量方向移动。Al_1-xLu_xN的能量损失光谱表现出明显的等离子体振荡特性,且峰值低于本征AlN。Al_1-xLu_xN的光电导率在低能区随能量的增加而急剧增加。     

Y-Cu共掺杂ZnO电子结构与光学性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征ZnO、Y和Cu单掺杂ZnO、Y-Cu共掺杂ZnO的电子结构和光学性质. 计算结果表明, 在本文的掺杂浓度下, Y和Cu单掺杂可以提高ZnO的载流子浓度, 从而改善ZnO的导电性, Y-Cu共掺时ZnO半导体进入简并状态, 呈现金属性. Y 掺杂ZnO可以提高体系在紫外区域的吸收, 而Cu掺杂ZnO在可见光和近紫外区域发生吸收增强现象, 其中由于Y离子和Cu离子之间的协同效应, Y-Cu共掺杂ZnO时体系对可见光和近紫外区域的光子能量吸收大幅增加, 因此Y-Cu共掺杂ZnO可以用于制作光电感应器件.     

In2O3电子结构与光学性质的第一性原理计算

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了In2O3电子结构和光学线性响应函数, 系统研究了In2O3电子结构与光学性质的内在关系. 利用计算的能带结构和态密度分析了带间跃迁占主导地位的In2O3材料的能量损失函数、介电函数、反射图谱, 根据电荷密度差分图分析了In2O3材料的化学和电学特性. 研究结果表明In2O3光学透过率在可见光范围内高达85%, 可作为优异的透明导电薄膜材料. 同时, 计算结果为我们制备基于In2O3透明导电材料的设计与大规模应用提供了理论依据, 也为监测和控制这一类透明导电材料的生长过程提供了可能性.     

Mn掺杂GaN的电子结构及光学性质

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mn掺杂GaN(Ga1-xMnN)晶体的电子结构及光学性质,详细讨论掺杂后电子结构的变化.计算表明,Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,Ga1-xMnxN表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料.另结合实验结果分析掺杂后体系的光学性质,发现吸收谱在1.3 eV处出现吸收峰,吸收系数随Mn2+浓度增加而增大.分析表明,该峰是源于Mn2+离子e态与t2态间的带内跃迁.     

Mg、Zn掺杂AlN电子结构的第一性原理计算

采用密度泛函理论(DFT)的第一性原理平面波超软赝势方法, 对Mg、Zn 掺杂AlN 的32 原子超原胞体系进行了几何结构优化, 从理论上给出了掺杂和非掺杂体系的晶体结构参数, 对纤锌矿结构AlN 晶体及AlN:Mg、AlN: Zn 的结构、能带、结合能、电子态密度、集居数、差分电荷分布进行计算和分析. 计算结果表明, AlN:Mg、AlN: Zn 都能提供很多的空穴态, 形成p 型电导, 并且Mg是较Zn 更好的p型掺杂剂.     

In、Sc掺杂对SrTiO_3电子结构和光学性质的影响(英文)

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法,研究了In、Sc p型掺杂对SrTiO_3母体化合物稳定性、电子结构和光学性质的影响.计算结果表明:掺杂后,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3的稳定性降低,体系显示p型简并半导体特征,掺杂仅引起杂质原子近邻区域的几何结构发生变化.同时,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的光学带隙分别展寬0.35、0.30 eV,光学吸收边发生蓝移,在1.25.2.00 eV的能量区间出现新的吸收峰,该吸收峰与体系Drude型自由载流子的激发相关.此外,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的可见光透过率有了明显的提高,在350-625 nm波长范围透过率高于85%.掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收.大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系具有较高光学透明度的原因.     

α,β,γ,δ,ε,η-Bi_2O_3电子结构和光学性质的第一性原理研究

基于密度泛函理论的CASTEP模块研究了α,β,γ,δ,ε和η-Bi_2O_3晶型,计算分析了其几何结构、能带结构、电子态密度和光学性质.结果表明,α,ε和η相均为层状结构,其中,α和ε相为单层—Bi—O—结构,而η相为双层—Bi—O—结构;β,γ和δ相为—Bi_m—O_n—交错结构,其中δ相交错尤为密集,呈现导体特性.各晶相的导带均由Bi 6p态构成,价带由O__(2p)态起主导作用.电势电位分析结果表明,6种晶相价带电位均在H_2O/O_2之下,具有强氧化能力,与实验报道的光催化氧化能力大小顺序γ-Bi_2O_3β-Bi_2O_3α-Bi_2O_3δ-Bi_2O_3一致,而导带还原电位低于H_2/H_2O,预测纯Bi_2O_3很难具备催化产氢能力.光学性质分析发现,γ和δ相的起始响应波长较大,说明其应具备红外激发的性质.这些结果可为获得偏红外激发和较宽光谱响应的Bi_2O_3材料研究提供理论基础,为研发和应用Bi_2O_3及其复合物提供重要的指导.     

Strain-tunable electronic properties and optical properties of Hf2CO2 MXene

Two-dimensional materials have been extensively applied because of their unusual electronic, mechanical, and optical properties. In this paper, the electronic structure and optical properties of Hf₂CO₂ MXene under biaxial and uniaxial strains are investigated by the Heys-Scuseria-Ernzerhof (HSE06) method. Monolayer Hf₂CO₂ can sustain stress up to 6.453 N/M for biaxial strain and 3.072 N/M for uniaxial strain. Monolayer Hf₂CO₂ undergoes the transition from semiconductor to metal under −12% strain whether it is under biaxial or uniaxial strain. With the increasing biaxial compressive strain, the blue shift of Hf-d, O-p, and C-p orbitals in valence band maximum results in the metallization of monolayer Hf₂CO₂, while the red shift of Hf-d and O-p orbitals in conduction band minimum results in the metallization of monolayer Hf₂CO₂ with increasing uniaxial compressive strain. The analysis of optical properties indicates that uniaxial strain weakens the reflectivity and refractive index of monolayer Hf₂CO₂ in the visible-light range. In addition, the effective mass and the charge distribution under biaxial and uniaxial strains are also explored.     

First-principles investigation of structural,electronic, and optical properties of transition metal-doped C40 CrSi2

Although CrSi₂ silicide is an attractive advanced functional material, the improvement of electronic and optical properties is still a challenge for its applications. Here, we apply the first-principles calculations to investigate the influence of transition metals (TMs) on the electronic and optical properties of C40 CrSi₂ silicide. Five possible TMs, Ti, V, Pd, Ag, and Pt, are considered in detail. The calculated results show that the additive metals Ti, V, Pd, and Pt are thermodynamically stable in C40 CrSi₂ because the calculated impurity formation energy of TM-doped C40 CrSi₂ is lower than zero. In particular, the V dopant is more thermodynamically stable than that of the other TMs. The calculated electronic structure shows that the band gap of C40 CrSi₂ is 0.391 eV, which is in good agreement with the other results. In particular, the additive TMs improve the electronic properties of C40 CrSi₂ due to the role of the d-state of TMs. Naturally, the additive TMs result in band migration (Cr-3d state and Si-3p state) from the valence band to the conduction band. Interestingly, the additive TMs lead to a red shift for optical adsorption of C40 CrSi₂ silicide.     

反式-双(二甲基苯膦)铂配合物二阶非线性光学性质的密度泛函理论研究

采用密度泛函理论B3LYP方法,在6-31G(d)的水平上对两种反式-双(二甲基苯膦)铂配合物的几何构型进行优化,在获得稳定构型基础上,利用TD-B3LYP方法得到体系的UV-Vis吸收光谱,并用有限场(FF/B3LYP)方法探讨体系的二阶非线性光学性质(NLO).结果表明,此类铂配合物具有较大的二阶极化率,以及在可见光范围内透明等优点,是具有很好应用前景的非线性光学材料.     

Theoretical study on the electronic structures and optical properties of blue‐green and blue phosphorescent iridium(III) complexes with tetraphenylimidodiphosphinate ligand

The electronic structures and photophysical properties of five iridium(III) complexes Ir(tfmppy)₂(tpip) (1), Ir(dfppy)₂(tpip) (2), Ir(afCNppy)₂(tpip) (3), Ir(CNpyN₃)₂(tpip) (4), and Ir(2fphpta)₂(tpip) (5) [where tfmppy = 4‐trifluoromethylphenylpyridine; dfppy =4,6‐difluorophenylpyridine; afCNppy = 6‐fluoro‐4‐octyloxy‐5‐cyano‐phenylpyridine; CNpyN₃ = 2‐(4‐cyano‐phenyl)‐[1,2,3]‐triazole; 2fphpta=2‐(2,6‐difluoro‐phenyl‐[1,2,4]‐triazol‐3‐yl)‐pyridine; tpip=tetraphenylimido‐diphosphinate] have been investigated by using density functional theory (DFT) methods and time‐dependent DFT ones, aiming at elucidating the influences of different substituents and cyclometalated ligands on the emission properties and quantum yield. The calculated results revealed that the different substituents in 1 ‐ 3 have a great influence on the energy levels, in particular highest occupied molecular orbital. Meanwhile, we have also get a further insight into the reason for different phosphorescence quantum yields of the studied complexes. The higher quantum yield (Φ) reported for 1 was found to be closely related to both its smaller S₁–T₁ splitting energy ( ) and larger transition electric dipole moment ( ) upon the S₀ → S₁ transition. Complex 5 is expected to be a potential candidate for blue‐emitting material with good organic light‐emitting diodes performances. We propose that the optical properties of this class of materials can be tuned by the modifications of the cyclometalated ligands. © 2013 Wiley Periodicals, Inc.     

Ab initio study of electronic structure and optical properties of heavy-metal azides: TlN3, AgN3, and CuN3

Detailed ab initio studies on the electronic structure and optical properties of the heavy-metal azides have been performed using density functional theory within the generalized gradient approximation. An analysis of band structure, density of states, charge transfer, and bond order shows that the heavy-metal azides are ionic compounds but have covalent character. The valence bands of AgN3 and CuN3 are strongly dominated by Ag- and Cu-d, respectively, but that of TlN3 arises from the contributions of Tl-s and terminal N-p and not from Tl-d. The real and imaginary parts of the dielectric function, adsorption coefficient, and electron energy-loss spectra are calculated and compared with available experimental data.     

苯并噻二嗪衍生物电子结构和非线性光学性质的研究

运用量子化学PM3方法，对苯并噻二嗪几种衍生物的几何构型、电子结构和前线分子轨道成分进行了分析，研究了电荷分布规律。同时，基于体系中电子转移的特点，利用有限场FF方法探讨了其非线性光学性质的变化。结果表明，苯并噻二嗪分子具有较好的二阶非线性光学性质，并可能成为一类良好的光学材料。     

First‐principles calculations on the energetics,electronic structures and magnetism of SrFeO2

The electronic and magnetic properties of SrFeO₂ with different magnetic configurations have been calculated via the plane‐wave pseudopotential density functional theory method, using the experimental lattice parameters. The results give an antiferromagnetic ground state for SrFeO₂ with an absolute magnetic moment agreeing very well with the experimental report. In comparison with the counterparts whose magnetic moments are parallel to the c axis, the structures with spin moments parallel to the a (or b) axis exhibit no observable preference in total energy, but show different density distributions of the Fe 3d and Fe 3d states. The square‐planar crystal field splits the Fe 3d orbitals into a high‐level d, a low d, and intermediate d_xy and d_xz or d_yz components. The exchange splitting is larger than the crystal‐field splitting, resulting in the high‐spin Fe 3d states. Referred to the triplet O₂, the O‐vacancy formation energy from SrFeO₃ to SrFeO₂ has been deduced as well, along with its dependence on the temperature and O₂ partial pressure. © 2009 Wiley Periodicals, Inc. J Comput Chem 2009