点电荷在拓扑绝缘体和导体中感应磁单极

利用电势和磁标势的第一类零阶贝塞尔函数的公式及拓扑绝缘体材料的本构关系, 推导了点电荷在电介质、 拓扑绝缘体和接地导体三个区域的感应电势及感应磁标势. 研究表明: 点电荷 在电介质、 拓扑绝缘体和接地导体中感应了像电荷和像磁单极; 感应像电荷和感应像磁单极的大小和正负除了与场源电荷、 拓扑绝缘体材料参数等因素有关外, 还与像电荷和像磁单极所处的空间位置有关.     

微秒长脉冲有磁场高功率微波二极管真空界面设计

介绍了一种微秒长脉冲有磁场的真空二极管界面的设计和实验结果。采取了三种措施来抑制沿面闪络:一是阴极电子束挡板,用来拦截来自阴极和电子束漂移管的回流电子束;二是接地屏蔽板,使电场等势线和界面成约45°角,使阴极三结合点处发射的电子远离绝缘板;三是降低阴极三结合点处的场强,并使用一悬浮电位的金属环阻止电子倍增过程。计算了二极管内电场、磁场分布和电子束的运动轨迹并据此优化了真空界面的结构,实验验证了该二极管真空界面可以在400 kV、800 ns条件下正常工作,可以支持长脉冲高功率微波器件的研究。     

Magnetic ratchet effects in a two-dimensional electron gas

The effect of the magnetic field on the generation of an electric current in a two-dimensional electronic ratchet is theoretically studied. Mechanisms of the formation of magnetically induced photocurrent are proposed for a structure with a two-dimensional electron gas (quantum well, graphene, or topological insulator) with a lateral asymmetric superlattice consisting of metallic strips on the external surface of the structure. The ratchet with the spatially oscillating magnetic field generated by the ferromagnetic lattice, as well as the nonmagnetic ratchet placed in the uniform magnetic field both classically weak and strong quantizing, is considered. It is established that the ratio of the amplitude of the magnetic oscillations of photocurrent to the ratchet photocurrent in zero field can exceed two orders of magnitude.     

自磁场下绝缘子沿面闪络特征

基于磁场闪络抑制原理,研究回路电流产生的自磁场效应对固体材料绝缘性能的影响。通过计算电场强度与磁感应强度的临界比值,设计了同轴电极结构,确定了满足闪络抑制判据的电极尺寸,开展自磁场闪络抑制实验、自磁场闪络促进实验以及无磁场绝缘闪络实验,对比三种条件下绝缘材料的沿面闪络规律,分析磁场位形对材料绝缘特性的影响情况。实验结果表明:绝缘样品在自磁场闪络抑制效应影响下闪络电压提高了约15%,在自磁场促进闪络效应下闪络电压降低了约18%。     

Effect of electric field on the electrical conductivity of defected carbon nanotube: Multifractal properties of the wavefunctions

A theoretical analysis of controllable metal–insulator transition is performed by carrying out a quantum chaos analysis for a single-walled carbon nanotube which is affected by topological Stone–Wales defect. Nanotubes have recently attracted attention as promising materials for flexible nanoelectronic devices. Individual topological Stone–Wales defects have been identified experimentally in carbon nanotubes (CNTs) and graphene. The findings reveal that defected CNT displays a gradual crossover from metal to insulator phase in a longitudinal electric field. By determining the threshold value of the electric field for metal–insulator transition, CNT may be used as a switch in electronic devices. Our results are obtained by calculating the singularity spectrum of a nearest-neighbor tight-binding model. Also, quantum chaos theory is used for obtaining a detailed understanding of a dynamic phase transition from delocalized states (chaotic) to localized states (Poisson). More interestingly, the appearance of negative differential resistance for pure CNT suggests potential applications in nanoelectronic devices.     

Bulk band gap and surface state conduction observed in voltage-tuned crystals of the topological insulator Bi2Se3

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi2Se3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage V(g). We find that the temperature T and magnetic field dependent transport properties in the vicinity of this V(g) can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high-mobility metallic channel that dominates at low T. The conductance (approximately 2×7e2/h), weak antilocalization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for electric field effect topological insulator devices at room temperature.     

Magnetic Properties of the Topological Kondo Insulator SmB6: Localized Magnetic Moments and Pauli Paramagnetism

JETP Letters - The magnetic properties of the topological Kondo insulator SmB6 are studied in the temperature range T < 10 K in an applied magnetic field up to 5 T. The analysis of the...     

Spin-Hall insulator

Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless spin-Hall effect, without any accompanying charge current, in some classes of band insulators, including zero-gap semiconductors such as HgTe and narrow-gap semiconductors such as PbTe. This effect is similar to the quantum-Hall effect in that all the states below the gap contribute and there occurs no dissipation. However, the spin-Hall conductance is not quantized even in two dimensions. This is the first example of a nontrivial topological structure in a band insulator without any magnetic field.     

Edge excitons in a 2D topological insulator in a magnetic field

Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

基于克尔效应的真空绝缘子表面电场在线测量

克尔效应(Kerr Effect)作为一种电光效应,主要表现为:克尔介质在外加电场作用下,会使得入射到其中的探测光带有外加电场的信息.基于上述原理,设计并搭建了由快脉冲高电压源、YAG激光器、同步控制子系统、被测绝缘子及克尔效应单元、相位差检测子系统构成的真空绝缘子表面电场在线测量实验平台.通过对比性测量,观察到了真空绝缘子沿面带电导致的表面电场畸变现象.并进一步对绝缘子表面电场的畸变进行了时间分辨测量.     

Interacting dirac fermions on a topological insulator in a magnetic field

We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.     

Charge transport and shot noise on the surface of a topological insulator with a magnetic modulation

In this paper, we investigate the transport features and the Fano factor of Dirac electrons on the surface of a three-dimensional topological insulator with a magnetic modulation. We consider a hard wall bounding condition on the edge of the topological insulator, which implies that a surface state of the topological insulator is insulating. We find that a valley of conductivity at the Dirac point is associated with a Fano factor peak, and more interestingly, this topological metal changes from insulating to metallic by controlling the effective exchange field.     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

Electromagnetic scattering by a time reversal symmetry broken topological insulator sphere

An exact solution of electromagnetic wave scattering by a time reversal symmetry broken topological insulator sphere is researched. According to the constitute relations of topological insulator, we modified magnetic vector potential and electric vector potential of standard Mie theory and derived scattered electromagnetic fields and scattered coefficients. Numerical results show that, when the time reversal symmetry is broken, the extinction efficiencies and the scattering efficiencies are influenced by topological magneto-electric polarizability.     

似稳场中的涡旋电场和电流源的关系

推导了涡旋电场与它的电流源之间的关系，利用此关系和磁场矢势计算了球形线圈内外的磁感应强度，并证明了两个闭合回路之间的互感系数相符。     

Stabilization of electromagnetic solitons in thin films of topological insulators by constant electric field

We consider the propagation of a variable electromagnetic field in a thin film of a topological insulator in low temperatures case at the presence of electric field. As a result we obtain an effective equation on the vector-potential amplitude of a variable electromagnetic field. We also detect some solutions, corresponding to solitons in the case of a cosine-type dispersion law for electronic subsystem. Finally, we analysed how non-linear solutions depend on the parameters of the problem and on electrostatic field.     

Temperature dependence of the electric field gradient in CdSe and HfO2

The time differential perturbed angular correlation technique was applied to study the electric field gradient in the semiconductor CdSe and the insulator HfO₂ at different temperatures. Whereas the semiconductor CdSe shows an increasing quadrupole coupling constant with increasing temperature, the insulator HfO₂ exhibits no temperature dependence of the electric field gradient over the whole temperature range investigated.     

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.     

Magnetic extension as an efficient method for realizing the quantum anomalous hall state in topological insulators

A new efficient method is proposed for inducing magnetism on the surface of a topological insulator through the deposition of a thin film of an isostructural magnetic insulator whose atomic composition is maximally close to that of the topological material. Such a design prevents the formation of a strong interface potential between subsystems. As a result, the topological state freely penetrates into the magnetic region, where it interacts with the exchange field and gets significantly split at the Dirac point. It is shown that the application of this approach to thin films of a tetradymite-like topological insulator allows realizing the quantum anomalous Hall state with a band gap of several tens of meV.