垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

Simultaneous excitation of Ce and Eu ions in Tb3Al5O12

Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce) and Tb₃Al₅O₁₂:Ce³⁺ (TAG:Ce) both show the typical Ce³⁺ ion luminescence of the allowed Ce³⁺ d–f transition. Eu³⁺ codoping, however, reveals different results for both matrices: in YAG:Ce,Eu, only the luminescence of the Ce³⁺ ion occurs by excitation within the Ce³⁺ absorption bands. Here, the Eu³⁺ luminescence cannot be sensitized by the Ce³⁺ ion. But in TAG:Ce,Eu, both Ce³⁺ and Eu³⁺ luminescence are measured at several excitation wavelengths: an excitation within the Tb-sublattice results in both Ce³⁺ and Eu³⁺ luminescence, which is not surprising as an energy transfer from Tb³⁺ to Ce³⁺ and Eu³⁺ is well known in literature. In addition, an excitation in the lowest 5d level of Ce³⁺ delivers Eu³⁺ luminescence at room temperature. This means that the Ce³⁺ ion can be used as a sensitizer in the TAG lattice that transfers its energy via the Tb sublattice to the activator Eu³⁺.     

Magnetic properties of xFe2O3(1−x)[B2O3 · PbO] glasses

The magnetic measurements performed on xFe₂O₃(1-x)[B₂O₃ · PbO] glasses show that for x 5 mol.% Fe₂O₃ the thermal variation of reciprocal susceptibility obeys a Curie behaviour. For higher iron content, at T 50 K, a nonlinear variation, typical for systems with random distribution of exchange interactions is observed. At greater temperatures than 50 K a Curie-Weiss behaviour is shown. The composition dependence of the Curie constants is analysed in correlation with the number of Fe³⁺ and Fe²⁺ ions as determined from Mössbauer effect measurements. A comparison with the data obtained in case of xFe₂O₃(1-x)[3B₂O₃ · PbO] glasses is made.     

Shaped crystal growth and scintillating properties of Yb:(Gd,Lu)3Ga5O12 solid solutions

Shaped single crystals of (Lu_xGd_1−x)₃Ga₅O₁₂ (0.0x1.0) and (Yb_0.05Lu_xGd_0.95−x)₃Ga₅O₁₂ (0.0x0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)₃Ga₅O₁₂ are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd³⁺ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd³⁺ or Yb³⁺ cations below 240 nm. A complete absence of Yb³⁺ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb³⁺ by that of Gd³⁺ ions. For specific composition of Lu_1.5Gd_1.5Ga₅O₁₂ an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi₄Ge₃O₁₂, was found.     

Ho,Yb: Tb3Ga5O12纳米粉体制备及发光性能研究

以Tb₄O₇和Ga₂O₃(化学计量比为3: 5)、Ho₂O₃、Yb₂O₃为原料,其中Yb³⁺的掺杂浓度为8at.%,Ho³⁺的掺杂浓度分别为0.5at.%、1at.%、1.5at.%、2.0at.%,以碳酸氢铵为沉淀剂,在1 200 ℃下烧结10 h得到了Ho,Yb: Tb₃Ga₅O₁₂(Ho,Yb: TGG)纳米粉体。对样品进行了XRD物相分析、热重-差热分析、红外光谱分析以及扫描电镜分析、上转换发射光谱分析。实验结果表明,温度为1 200 ℃下样品平均晶粒尺寸为38.10 nm。在泵浦源为980 nm激发下,Ho³⁺掺杂浓度为1.5at.%,Yb³⁺掺杂浓度为8at.%时,在红、绿、蓝波段范围内出现了明显的上转换发光现象,并对其形成机理进行了讨论。分析认为,Ho³⁺由激发态⁵S₂,⁵F₄向基态⁵I₈跃迁,实现了绿光输出,而Ho³⁺由激发态⁵F₅和⁵F₃向基态⁵I₈跃迁,分别实现了红光和蓝光输出。     

晶格失配应力对单晶(BiTm)_3(GaFe)_5O_(12)膜磁畴结构的影响

利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)_3(GaFe)_5O_(12)膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.     

CaCu3Ti4O12 陶瓷松弛损耗机理研究

CaCu₃Ti₄O₁₂介电损耗较大且损耗机理尚不明确, 因此限制了其应用.本文采用固相法和共沉淀法合成CaCu₃Ti₄O₁₂陶瓷, 利用宽带介电温谱研究在交流小信号作用下, 双Schottky势垒耗尽层边缘深陷阱的电子松弛过程、 载流子松弛过程以及CaCu₃Ti₄O₁₂陶瓷的介电损耗性能. 研究发现, 在低频下以跳跃电导和直流电导的响应为主, 而高频下主要为深陷阱能级的松弛过程所致, 特别是活化能为0.12 eV的深陷阱浓度, 这是决定CaCu₃Ti₄O₁₂陶瓷高频区介电损耗的重要因素.降低直流电导, 有利于降低低频区介电损耗; 而高频区介电损耗的降低, 需要降低深陷阱浓度或增大晶粒尺寸. 共沉淀法制备的CaCu₃Ti₄O₁₂陶瓷, 有效降低直流电导及控制深陷阱浓度, 介电损耗降低明显. 关键词： 3Ti₄O₁₂陶瓷')" href="#">CaCu₃Ti₄O₁₂陶瓷 介电损耗 松弛过程 Schottky势垒     

Effects of Ce3+ energy level structure on absorption and luminescence properties of Ce-doped YAlO3,Y3Al5O12,and LaAlO3 single crystals

We investigate the spectra and scintillation properties of Ce:YA103,Ce:Y₃Al₅O₁₂,and Ce:LaA103.For Ce:YAlO₃,the excitation spectrum is very similar with the absorption spectrum;for Ce:Y₃Al₅O₁₂ and Ce:LaAlO₃,the excitation spectra are different from the absorption spectra.Further,Ce:YAlO₃ has better scintillation performance than Ce:Y₃Al₅O₁₂ whereas Ce:LaAlO₃ has not demonstrated scintillation performance to date.We also provide reasonable explanations for these experimental phenomena from the viewpoint of energy level structure.     

Magnetic and electromagnetic properties of RuZn and RuCo substituted BaFe12O19

Polycrystalline samples of M-type hexaferrites BaFe_12−2xRu_xZn_xO₁₉ and BaFe_12−2xRu_xCo_xO₁₉ with 0x0.45 have been prepared by a classical sintering method. The evolutions with x of the cell parameters, the saturation magnetization and the magnetic transition temperature have been measured; in this range of small doping ratios, saturation magnetization and Curie temperature of substituted hexaferrites remain close to those of the undoped BaFe₁₂O₁₉. X-ray diffraction measurements on oriented powders show that a change of magnetocrystalline anisotropy from axial to planar occurs in both cases for a small substituting ratio x_c=0.375. Microwave electromagnetic characteristics have been studied on the ceramic samples from 0.1 to 10 GHz. The behaviour of the magnetic losses (μ″) corroborates the anisotropy change when doping; a convolution of the dissipation mechanisms (domain wall motions and gyromagnetism) is obtained for x_c. The level of the magnetic losses is discussed in relation with others substituted Ba-hexaferrites.     

X-ray diffraction studies of epitaxy in orthorhombic- DyMnO3/Er1Ba2Cu3O7-δ thin film heterostructures on LaAlO3 (100) substrates

The heteroepitaxy in DyMnO₃/Er₁Ba₂Cu₃O_7-δ bilayer thin films on LaAlO₃ (100) substates was characterized by four-circle X-ray diffractometry. The Er₁Ba₂Cu₃O_7-δ thin films on LaAlO₃ (100) substrates were prepared by molecular-beam deposition (MBD) and post-growth annealing in wet and dry O₂ at 880°C, whereas the DyMnO₃ thin films on the Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure were deposited by MBD and post-growth annealing in dry O₂ at 750°C. The conventional X-ray diffraction (XRD) patterns as well as pole figures (φ-scans) for specific (hkl) reflections were acquired. The Er₁Ba₂Cu₃O_7-δ thin film in the DyMnO₃/Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure showed [001] oriented epitaxial growth, as expected. The DyMnO₃ thin film on the Er₁Ba₂Cu₃O_7-δ epilayer in the heterostructure grew with (110) epitaxy in its metastable orthorhombic phase (lattice constants: a_o=5.272 Å, b_o=5.795 Å and c_o=7.38 Å). The heteroepitaxial relationships at the orthorhombic-DyMnO O₃ (110) /Er₁Ba₂Cu₃O_7-δ (001) interface was determined as the following: DyMnO₃ (110) Er₁Ba₂Cu₃O_7-δ (001), DyMnO₃ [1 0] ¶r; Er₁Ba₂Cu₃O_7-δ[100] or Er₁Ba₂Cu₃O_7-δ[010], and DyMnO₃ [001] ¶r; Er₁Ba₂Cu₃O _7-δ[010] or Er₁Ba₂Cu₃O_7-δ [100].     

CaCu3Ti4O12 陶瓷介电模量响应特性的研究

由于CaCu₃Ti₄O₁₂巨介电常数陶瓷的低频区直流电导较大, 本文采用模量 M"-f频谱表征与分析了低频和高频的两个松弛极化过程. 研究认为, 这两个特征峰属于晶界区Schottky 势垒耗尽层边缘深陷阱的电子松弛过程, 其中高频松弛峰起源于晶粒本征缺陷的电子松弛过程, 而低频松弛峰则为与氧空位有关的松弛极化过程. 对于CaCu₃Ti₄O₁₂这类低频下具有高直流电导的陶瓷材料, 采用模量频谱能更有效地分析研究其损耗极化机理. 关键词： 3Ti₄O₁₂陶瓷')" href="#">CaCu₃Ti₄O₁₂陶瓷 模量 松弛过程 电导     

探索基于人工超晶格LaFeO3-YMnO3和自然超晶格n-LaFeO3-Bi4Ti3O12薄膜多铁性

基于纳米尺寸下复合铁电材料和反铁磁性材料是一个探索多铁性材料有效的方法. 利用激光脉冲沉积制备出LaFeO₃-YMnO₃人工超晶格和掺入不同层LaFeO₃, BiFeO₃的Bi₄Ti₃O₁₂的外延薄膜. 通过系统的X射线衍射、透射电子显微术、扫描透射电子显微术下的能量损失谱表征证明这些样品具有原子尺寸上清晰的界面和完整的层状结构. 磁性测试证明这些材料具有亚铁磁性. 特别是在0.5和1.5LaFeO₃-Bi₄Ti₃O₁₂中的亚铁磁性甚至能保持到室温. 就铁电性而言, 铁电性测试显示出LaFeO₃-YMnO₃和插入BiFeO₃的Bi₄Ti₃O₁₂样品中存在较大的漏电流, 而在0.5LaFeO₃-Bi₄Ti₃O₁₂样品中存在铁电性. 因此在0.5LaFeO₃-Bi₄Ti₃O₁₂中能够实现亚铁磁和铁电共存. 其次发现当掺入多层的钙钛矿(3层SrTiO₃或2.5层LaFeO₃)后, Bi₄Ti₃O₁₂ 的层状结构将出现结构失稳现象. 这些工作对于利用纳米复合开发新颖多铁性提供一些实例.     

LaxBa1-xFe12-xZnxO19铁氧体磁性与穆斯堡尔谱的研究

采用草酸盐共沉淀工艺制备了La_xBa_1-xFe_12-xZn_xO₁₉六角铁氧体,当x<0.8时生成磁铅石型六角铁氧体,随x值增大,比磁化强度σ值增加,居里温度下降,磁晶各向导性降低,由穆斯堡尔谱分析推断锌离子从尤过于4f₂晶位。 关键词：     

(1-x)Sr_3Sn_2O_7+xCa_3Mn_2O_7陶瓷合成及其光电性能

为了寻求新的非常规多铁性材料,采用固相合成方法制备具有Ruddlesden-Popper结构的(1-x)Sr_3Sn_2O_7+x Ca_3Mn_2O_7(SSO+CMO)(x=0,0.05,0.10,0.15,0.20)系列陶瓷.通过X射线衍射、紫外可见光谱和磁性测量,发现SSO+CMO陶瓷为单一正交相结构,空间群为A21am.随着掺杂量x的增加,样品的晶胞参数和体积相应地减小;在室温不同频率下,样品的介电常数和介电损耗随着频率增加而减小,且在x=0.1时有弱的铁磁性.     

Eu3+掺杂5Li2O-1Nb2O5-5TiO2发光陶瓷的制备及性能研究

以Li₂CO₃、Nb₂O₅、TiO₂和Eu₂O₃为原料,采用固相法制备Eu³⁺掺杂的5Li₂CO₃-1Nb₂O₅-5TiO₂（LNT）发光介质陶瓷。通过密度、XRD和荧光光谱测试,对0.2%（质量分数）Eu₂O₃掺杂的陶瓷片进行性能表征。结果表明：1 120℃烧结致密的陶瓷片,其晶相结构为“M-相”与Li₂TiO₃两相复合构成;在400 nm的近紫外光激发下,样品有较强的橙光（592 nm）和红光（615 nm）发射,分别属于Eu³⁺的⁵D₀→⁷F₁的磁偶极跃迁和⁵D₀→⁷F₂的电偶极跃迁。     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Sc-doped YIG films were grown on (1 1 1) oriented GGG crystalline substrate with disorientation angle within the range 0-25′. Sc³⁺ ion substitution was varied within the range 0.25-0.3 per formula unit. The films demonstrate different types of surface morphology versus film growth rate and substrate disorientation. Conditions for existence of these types of the surface morphology were defined. The field dependence of magnetic susceptibility at magnetization reversal in film plane and Faraday rotation at wavelength 633 nm for a magnetic field applied in perpendicular direction were measured to characterize the films grown. Films with “mirror-like” surface demonstrate a planar magnetization at room temperature.     

包钴铁氧体型γ-Fe2O3磁粉穆斯堡尔效应的研究

包钴铁氧体型,γ-Fe₂O₃磁粉(简记为CoFe-γ-Fe₂O₃)是针状γ-Fe₂O₃磁粉与Co⁺⁺和Fe⁺⁺溶液起反应,在每个针状颗粒上包覆了一层钴铁氧体固溶体。经此种方法处理后的γ-Fe₂O₃磁粉的矫顽力及其它磁特性有较大的提高。如矫顽力由原来415Oe增加到715Oe;剩磁和矫顽力随时间及温度变化小等。我们利用穆斯堡尔效应并配合其它研究手段进行了研究,认为:CoFe-γ-Fe₂O₃磁粉矫顽力的提高,主要是由于γ-Fe₂O₃磁粉表面包覆了一层钴铁氧体固溶体,γ-Fe₂O₃与钴铁氧体固溶体之间发生磁耦合作用之故。 关键词：     

Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures

A detailed study of the in-plane magnetotransport properties of spin valves with one and two Fe₃O₄ electrodes is presented. Fe₃O₄/Au/Fe₃O₄ spin valves exhibit a clear anisotropic magnetoresistance in small magnetic fields but no giant magnetoresistance (GMR). The absence of GMR in these structures is due to simultaneous magnetization reversal in the two Fe₃O₄ layers. By contrast, a negative GMR effect is measured on Fe₃O₄/Au/Fe spin valves. The negative GMR is attributed to an electron spin scattering asymmetry at the Fe₃O₄/Au interface or an induced spin scattering asymmetry in the Au interfacial layers.     

Surface termination, composition and reconstruction of Fe3O4(001) and γ-Fe2O3(001)

We address a current controversy concerning the nature of the surfaces of Fe₃O₄(001) and γ-Fe₂O₃(001) grown on MgO(001) by molecular beam epitaxy. Despite recent claims to the contrary, we show that γ-Fe₂O₃(001) unambiguously exhibits a (1×1) surface net, in contrast to Fe₃O₄(001), which assumes a R45 reconstruction. In addition, we present high-energy-resolution Fe 2p and O 1s core-level photoelectron spectra obtained at both normal and grazing emission for γ-Fe₂O₃(001) and Fe₃O₄(001). These spectra show that the Fe₃O₄(001) surface has a higher Fe(III)/Fe(II) ratio than the bulk, and that the asymmetry in the O 1s line shape for Fe₃O₄(001) is due to final state effects rather than the presence of a surface oxygen or hydroxyl species.