Ion synthesis of copper nanoparticles in sapphire and their modification by high-power excimer laser pulses: A review

Composite layers made in sapphire by implantation of 40-keV Cu⁺ ions at a dose of 1 × 10¹⁷ cm⁻² and an ion beam current density varying from 2.5 to 10 μA/cm² are studied. It is shown that ion implantation makes it possible to synthesize a composite layer containing copper nanoparticles at the surface of the insulator. However, the nanoparticle size distribution in this layer is nonuniform. The composite layer is exposed to high-power excimer laser radiation with the aim of modifying the size and size distribution of the metal nanoparticles in it. The resulting structures are examined by Rutherford backscattering, optical reflection spectroscopy, and atomic force microscopy. It is found that the laser irradiation diminishes copper nanoparticles in the composite layer. Experimental data on laser modification may be explained by photofragmentation and/or melting of the nanoparticles in the sapphire matrix under the action of nanosecond laser pulses.     

The effect of He+, O+, B+, and Cd+ implantation on the surface structure of magnesium oxide substrates for HTSC films

The surface structure and the morphology of polished MgO(100) substrates after ion implantation and laser annealing are studied. It is shown that ion implantation, combined with subsequent laser annealing, modifies the surface of the MgO(100) substrate, producing a single-crystal surface layer. According to electron diffraction analysis data, this layer is continuous only in case of Cd⁺ implantation.     

Nanospallation induced by an ultrashort laser pulse

A femtosecond laser pulse with power density of 10¹³ to 10¹⁴ W/cm² incident on a metal target causes ablation and ejection of the surface layer. The ejected laser plume has a complicated structure. At the leading front of the plume, there is a spall layer where the material is in a molten state. The spall layer is a remarkable part of the plume in that the liquid-phase density does not decrease with time elapsed. This paper reports theoretical and experimental studies of the formation, structure, and ejection of the laser plume. The results of molecular dynamics simulations and a theoretical survey of plume structure based on these results are presented. It is shown that the plume has no spall layer when the pulse fluence exceeds an evaporation threshold F _ev. As the fluence increases from the ablation threshold F _a to F _ev, the spall-layer thickness for gold decreases from 100 nm to a few lattice constants. Experimental results support theoretical calculations. Microinterferometry combined with a pump-probe technique is used to obtain new quantitative data on spallation dynamics for gold. The ablation threshold is evaluated, the characteristic crater shape and depth are determined, and the evaporation threshold is estimated.     

Formation of p-type layer by KrF excimer laser doping of carbon into GaAs in CH4 gas ambient

Carbon doping of GaAs using a KrF excimer laser to form a p-type active layer is described. Methane gas (CH₄) was used as a source of the C acceptor. Various quantities such as sheet resistance, surface carrier density, Hall mobility, and depth profile of C-doped GaAs are measured as the functions of laser fluence and laser pulse. It is shown that C atoms are doped only within a limited depth as shallow as 50 nm or less and with extremely high concentration exceeding 1×10²¹ cm^–3. The maximum activation efficiency is found to be 69.0%. Laser induced changes of surface morphologies and electron diffraction patterns are also discussed. Furthermore, non-alloyed ohmic contacts using laser-doped p-type GaAs are demonstrated.     

Interdiffusion studies in Bi-based layered systems with nanosecond laser pulses

Interdiffusion processes are induced by nanosecond laser pulses from an excimer laser. The Bi-based systems studied are formed by a Bi layer and a Sb or Ge layer. Configurations with Bi at the surface layer or at the innermost layer are both studied. Real-time reflectivity measurements are performed during the irradiation to determine the process kinetics and times and Rutherford backscattering spectrometry is used to obtain the concentration depth profiles. It will be shown that there is an interfacially initiated diffusion process in the Bi-Sb system and that the diffusion coefficients of this system within the liquid phase are in the 10^–5–10^–6 cm²/s range. The Bi-Ge system shows instead little mixing, the diffusion coefficients of the system within the liquid phase being at least two orders of magnitude lower. The differences observed when Bi is the surface layer or the innermost one are related to the different thermal responses of the system.     

Photophysical processes stimulated in nanoporous silicon by high-power laser radiation

Photoprocesses initiated on the surface of porous silicon irradiated with laser radiation with wavelengths (λ = 266, 337, and 532 nm) in a wide range of intensities (up to 2 × 10⁷W/cm²) were investigated. Laser-induced luminescence and laser mass-spectrometry were used as experimental procedures. X-ray reflection was used to determine the parameters of the porous silicon films. The photoluminescence spectra obtained at different wavelengths and low intensities were analyzed. This analysis showed that for an optically thin layer of porous silicon the luminescence spectrum does not depend on the wavelength of the exciting radiation. This indicates the existence of a separate system of levels in porous silicon that are responsible for the luminescence. The behavior of the photoluminescence spectra as a function of the intensity q of the exciting radiation was investigated. It was shown that the luminescence intensity is a nonlinear function of q. At high intensities of the exciting radiation, the luminescence intensity saturates and a short-wavelength shift of the spectra is observed; this is due to the high concentrations of photoexcited carriers. This increases the probability of the experimentally observed nonequilibrium photodesorption of H₂ and Si from the surface of porous silicon.     

Enhanced production of fast multi-charged ions from plasmas formed at cleaned surface by femtosecond laser pulse

We present atomic, energy, and charge spectra of ions accelerated at the front surface of a silicon target irradiated by a high-contrast femtosecond laser pulse with an intensity of 3×10¹⁶ W/cm², which is delayed with respect to a cleaning nanosecond laser pulse of 3-J/cm² energy density. A tremendous increase in the number of fast silicon ions and a significant growth of their maximum charge in the case of the cleaned target from 5+ to 12+ have been observed. The main specific features of the atomic, energy, and charge spectra have been analyzed by means of one-dimensional hydrodynamic transient-ionization modeling. It is shown that fast highly charged silicon ions emerge from the hot plasma layer with a density a few times less than the solid one, and their charge distribution is not deteriorated during plasma expansion.This revised version was published online in August 2005 with a corrected cover date.     

Scattering of relativistic electrons by a focused laser pulse

The problem of the motion of a classical relativistic electron in a focused high-intensity laser pulse is solved. A new three-dimensional model of the electromagnetic field, which is an exact solution of Maxwell’s equations, is proposed to describe a stationary laser beam. An extension of the model is proposed. This extension describes a laser pulse of finite duration and is an approximate solution of Maxwell’s equations. The equations for the average motion of an electron in the field of a laser pulse, described by our model, are derived assuming weak spatial and temporal nonuniformities of the field. It is shown that, to a first approximation in the parameters of the nonuniformities, the average (ponderomotive) force acting on a particle is described by the gradient of the ponderomotive potential, but it loses its potential character even in second order. It is found that the three-dimensional ponderomotive potential is asymmetric. The trajectories of relativistic electrons moving in a laser field are obtained and the cross sections for scattering of electrons by a stationary laser beam are calculated. It is shown that reflection of electrons from the laser pulse and the surfing effect are present in the model studied. It is found that for certain impact parameters of the incident electrons the asymmetic ponderomotive potential can manifest itself effectively as an attractive potential. It is also shown that even in the case of a symmetric potential the scattering cross section contains singularities, known as rainbow scattering. The results are applicable for fields characterized by large (compared to 1) values of the dimensionless parameter η² = e ²〈E ²〉/m ²ω² and arbitrary electron energies.     

Growth of titanium oxynitride layers by short pulsed Nd:YAG laser treatment of Ti plates: Influence of the cumulated laser fluence

Titanium oxynitride layers were formed by surface laser treatment of Ti plates in air using a Nd:YAG laser source of short pulse duration about 5 ns. The cumulated laser fluence was varied in the 100-1200 J cm⁻² range and its influence on the composition and the structure of the formed layers was studied by different characterization techniques providing physico-chemical and structural information. It was shown that the laser treatment induces the insertion of light elements as O, N and C in the formed layer with the amount increasing with the laser fluence. The in-depth composition of the layers and the co-existence of different phases were also studied.The way in which the laser parameters such as fluence affect the insertion of nitrogen and oxygen was discussed in connection with the effects of the plasma plume formed above the target.     

Collective behavior of laser-produced plasma from a multicomponent YBa2Cu3O7 target in air

2 Cu₃O₇, using a Q-switched Nd:YAG laser is investigated by time-resolved emission-spectroscopic techniques at various laser irradiances. It is observed that beyond a laser irradiance of 2.6×10¹¹ W cm^-2, the ejected plume collectively drifts away from the target with a sharp increase in velocity to 1.25×10⁶ cm s^-1, which is twice its velocity observed at lower laser irradiances. This sudden drift apparently occurs as a result of the formation of a charged double layer at the external plume boundary. This diffusion is collective, that is, the electrons and ions inside the plume diffuse together simultaneously and hence it is similar to the ambipolar diffusion of charged particles in a discharge plasma. Received: 30 January 1998/Revised version: 12 June 1998     

Characterization of a laser-soldered avionic component using lead-free paste

Electrical cable-connector sets used in airplanes have been laser soldered using a lead-free paste. These connections are usually crimped using a hand tool, which necessarily leads to variable mechanical and electrical properties in the connection. Calorimetric studies have shown that paste melting occurs within tenths of a second at laser intensities of 400 or 500 W cm⁻². However, when such laser intensities strike the connector surface, some boiling occurs. In order to avoid paste losses, a stepped heating curve is applied, which allows good weldability. It was verified that a reaction layer of 2 μm length exists between the wires and the solidified solder paste, and also that there is some diffusion of copper from the wires to the paste. The soldered joints are 38% more electrically conductible and have 113% more tensile strength resistance than crimped joints.     

Laser printing and characterization of semiconducting polymers for organic electronics

Hybrid organic/inorganic thin-film transistors (TFTs) with bottom-contact configuration were fabricated using the Laser Induced Forward Transfer (LIFT) process. The semiconducting polymer P3HT was laser printed from a donor to a receiver substrate in order to form the active layer of the TFTs. With a single laser pulse, P3HT pixels were successfully printed. The printed material was analyzed morphologically by means of Optical Microscopy and its thickness was measured by profilometry. In addition, structural characterization of P3HT thin films before and after laser printing took place by using UV-Visible absorption spectroscopy and X-Ray Diffraction. It was found that the crystallinity of the investigated films is improved upon annealing. An organic thin-film transistor (OTFT) with laser printed P3HT pixel as a channel layer was then fabricated. The OTFTs indicated a field-effect mobility up to 2.23?10^?4 cm²/Vs and an on/off ratio on the order of 10–100.     

EPR diagnostics of laser materials based on ZnSe crystals doped with transition elements

The electron paramagnetic resonance (EPR) spectra observed in laser materials based on zinc selenide (ZnSe) crystals doped with transition elements have been analyzed and identified. It has been shown that, in addition to working impurities (Cr²⁺, Co²⁺, or Fe²⁺), the diffusion layer exhibits EPR spectra of accompanying impurities due to the diffusion of transition elements (chromium, cobalt, or iron) used in the preparation of active materials for quantum electronics (lasers, switches) operating in the mid-infrared range. EPR diagnostics of these impurities can be used in the development of appropriate regimes for minimizing concentrations of accompanying impurities that adversely affect the performance characteristics of laser materials. It has been found that, during the diffusion of transition metals, ions of the accompanying impurity Mn²⁺, which is characterized by extremely informative EPR spectra, are embedded in the crystal lattice. It has been proposed to use these ions as ideal markers to control, on the electronic level, the crystal structure of the active diffusion layer.     

Laser etching of fused silica using an adsorbed toluene layer

A new method for laser etching of transparent materials with a low etch rate and a very good surface quality is demonstrated. It is based on the pulsed UV-laser backside irradiation of a transparent material that is covered with an adsorbed toluene layer. This layer absorbs the laser radiation causing the etching of the solid. The threshold fluence for etching of fused silica amounts to 0.7 J/cm². The constant etch rate of about 1.3 nm/pulse that has been observed in a fluence interval from 2 to 5 J/cm² is evidence of a saturated process. The limited thickness of the adsorbed layer causes the low etch rates and the rate saturation. The etched surface structures have well defined edges and low surface roughness values of down to 0.4 nm rms. PACS 81.65.Cf; 81.05.Kf; 79.20.Ds; 61.80.Ba; 42.55.Lt     

Formation of fast multicharged heavy ions under the action of a superintense femtosecond laser pulse on the cleaned surface of a target

It is found that the mean charge of tungsten ions in a solid tungsten target cleaned from the surface layer of hydrocarbon and oxide compounds and exposed to femtosecond laser radiation with an intensity exceeding 10¹⁶ W/cm² attains 22+, while the maximum charge is 29+. The maximum energy of such ions approaches 1 MeV. The corresponding values obtained on a dirty target with the same laser pulse parameters constitute 3+, 5+, and 150 keV. The results of numerical simulation show that such a large maximum charge of ions can be attained owing to the emergence of an electrostatic ambipolar field at the sharp boundary between the plasma and vacuum. The main mechanism of ionization of ions with maximum charges is apparently impact ionization in the presence of an external quasi-static field. In addition, direct above-threshold ionization by this field can also play a significant role. It is also shown that heavy ions in a clean target are accelerated by hot electrons. This leads to the formation of high-energy ions. The effect of recombination on the charge of the ions being detected is analyzed in detail.     

Changes in Semiconductor Prorerties under Laser Irradiation

The effect of laser exposure on semiconducting materials is studied. Using experimental data processing for silicon as an example, moderate laser fluxes (<10⁶ W/cm^–2) are shown to cause a sharp increase in the absorption coefficient of the surface semiconducting layer.     

Optical probing of laser-induced shock waves in air

Shock Waves (SW) were produced in air by focusing the (0.25 J, 6 ns) second-harmonic ( = 532 nm) Nd : YAG laser light into a stainless-steel cylindrical cell at a pressure from 200 to 760 Torr. The laser fluence at the focal point is > 5 GW/cm². The spatial variation and consequently the time evolution of the radial propagation velocityU of the generated shock waves were measured via a simple optical system utilizing a HeNe laser beam triply intersecting the propagating shock wave at three successive positions. Using a reflector, we were able to probe the traveling SW in six consecutive positions during its round trip. Good agreement was obtained between the experimental results and the predictions of the point strong explosion theory. It is shown that this method is simple with a fairly good precision. It therefore appears to be useful for the determination of the SW dynamic parameters, namely its Mach number, the pressure at the SW front, the thickness of the compressed air layer and the energy consumed in producing this layer.     

Laser driven shock wave studies in gold coated Plexiglas targets

Abstract

Laser-driven shock wave propagation in a transparent material such as Plexiglas coated with a thin overlayer of gold is studied using the technique of high speed optical shadowgraphy. A Nd: glass laser was focussed to produce intensities in the range of 10′²-10′⁴W/cm² on the target, within an irradiation spot diameter of 160 pm, optical shadowgrams were recorded bya second harmonic (0.53 pm wavelength) pulse. Shock pressures and scaling of pressure with laser intensity was studied. Shock pressures in gold-coated Plexiglas target was observed to be considerably higher compared to those in uncoated targets. This enhancement of shock pressure has been explained on the basis of contribution of an X-ray driven ablative heat wave in the gold plasma. Shock pressure values show a close agreement with those obtained from a one-dimensional Langrangian hydrodynamic simulation. Shadowgrams of shock fronts produced by non-uniform spatial laser beam irradiation profiles have shown complete smoothing when a gold layer is used on a Plexiglas target.     

X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation

The changes in the real structure of CdTe monocrystals caused by the thermal action of a high-power laser pulse (1.6–1.97 J/cm²) were studied by high-resolution x-ray topography and diffractometry methods. It was shown that, under our experimental conditions, in a thin surface layer within the crystal region exposed to the radiation, a dislocation cell structure with an increased dislocation density and with considerable micromisorientations, in comparison with the crystal region unexposed to the radiation, was formed. The characteristics of this modified crystal region were determined, and the thickness of the layer with the changed structure was estimated.     

Enhancement of high energy proton yield with a polystyrene-coated metal target driven by a high-intensity femtosecond laser

We present experimental results on protons accelerated up to 950 keV from a 3-μm thick tantalum foil with a 133-nm thick polystyrene layer on its rear surface, irradiated with a laser pulse having the duration of 70 fs and the intensity of 2.7×10¹⁸ W/cm². The energy distribution of fast protons was measured simultaneously with that of the hot-electrons from the rear surface. The proton yield from the polystyrene-coated target is about 10 times as high as that from the uncoated metal target. This enhancement of the proton yield is roughly proportional to the increase of hydrogen atoms given by the 133-nm thick polystyrene layer, assuming a contaminant layer of ∼10-nm thickness is on the metal surface without coating. This result shows that the polystyrene layer contributes to the yield enhancement. PACS 52.38.Kd; 52.50.Jm; 52.59.-f