High-pulse-stability double-end continuous-grown YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> acousto-optically Q-switched laser at high repetition rates

High pulse amplitude stability of 0.62% (rms) is achieved at 60 kHz repetition rate in fundamental mode with double-end continuous-grown YVO₄/Nd:YVO₄/YVO₄ composite crystal. The average output power and pulse peak power are 32.9 W and 27.7 kW, respectively, with 19.8 ns pulse width and 548 μJ pulse energy. The pulse amplitude stability is investigated experimentally. The stability gets improved with the decrease of repetition rate and output transmission. From theoretical analysis, the reason of pulse instability at high repetition rates is that the initial population inversion doesn’t saturate and the final population inversion doesn’t approach zero. With the decrease of repetition rate and output transmission, the final population inversion decreases and the interaction between two adjacent pulse periods is weakened. Therefore, pulse stability improves.     

Passively Q-switched laser operation in a composite Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> crystal with a single-walled carbon nanotube saturable absorber

By using a piece of single-walled carbon nanotube saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser has been demonstrated for the first time. The maximum average output power and the shortest pulse width are 1220 mW and 103 ns at the incident pump power of 5.04 W for a 10% transmission of the output coupler. The highest pulse repetition rate of 415.6 kHz and the largest single-pulse energy of 2.94 μJ are also obtained. The composite Nd:YVO₄ crystal has more excellent laser performance than the normal Nd:YVO₄ crystal at 1064 nm.     

Compact diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser in grazing-incidence configuration

The analysis of compact CW diode-side-pumped grazing-incidence-geometry Nd:YVO₄ laser designs is presented. An output power of 5 W (λ=1064 nm) was produced at 17 W of diode pump (conversion efficiency of 30%) in single transverse TEM₀₀ mode operation at high laser beam quality (M_x ²≈1.05 and M_y ²≈1.01). The resonator geometry was analyzed by applying generalized 4×4 matrix modeling of the spatial mode size, including the impact on the laser operation of cavity astigmatism and a thermal lens in the laser slab. The simplicity and compactness of the laser cavities allow their use for technological applications. Received: 31 July 2002 / Published online: 22 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: m.damzen@ic.ac.uk     

37 W 888-nm-pumped grown-together composite crystal YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> oscillator at 1342 nm

We report on a continuous-wave Nd:YVO₄ oscillator at 1342 nm based on the combination of a grown-together composite crystal YVO₄/Nd:YVO₄/YVO₄ and the 888 nm diode-laser direct pumping for the first time. At the absorbed pump power of 102 W, a maximum average output power of 37.2 W at 1342 nm was obtained, corresponding to an optical-optical conversion efficiency of 36.5% and a high slope efficiency of 63.0%, respectively. To the best of our knowledge, this is the highest output power ever obtained for a 1342 nm Nd:YVO₄ oscillator.     

Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.     

A novel prism beam-shaping laser diode bar end-pumped TEM<Subscript>00</Subscript> mode Nd:YVO<Subscript>4</Subscript> laser

A beam-shaping diode end-pumped TEM₀₀ mode CW Nd:YVO₄ laser is presented. A special beam-shaping element made up of isosceles right-angled prism pieces is adopted to realize beam symmetric. Two cylinder lenses are used to couple the shaped beam into a 3 × 3 × 9 mm Nd:YVO₄ crystal with 0.3 at % neodymium doping. By using this laser system, we have achieved 6.1 W CW laser operated in single transverse mode at 1064 nm with 95.2% reshaping efficiency and 25.6% optical-optical conversion efficiency.     

Compact efficient diode-end-pumped intracavity frequency-tripled Nd:YVO<Subscript>4</Subscript> 355 nm laser

A compact efficient diode-end-pumped acousto-optically Q-switched intracavity-frequency-tripled Nd:YVO₄ 355 μm ultraviolet laser was realized. Intracavity sub-resonators with anti-reflection and high-reflection coated mirrors were used to get higher efficiency of third harmonic generation. With two LBO crystals used in frequency doubling and tripling processes, greater than 1.46 W 355 nm average output power was obtained under the absorbed pump power of 13.9 W and the repetition rate of 10 kHz. The corresponding pump-to-ultraviolet conversion efficiency was determined to be as high as 10.5%. At 10 kHz, the minimize pulse width was obtained to be 12 ns with the peak power of 10.4 kW and single pulse energy of 146 μJ.     

Widely tunable PPLN/IOPO driven by a diode-end-pumped Q-switched Nd:YVO<Subscript>4</Subscript> laser

This paper reported a broadband tuning intracavity optical parametric oscillator (IOPO), based on the multiple grating periodical poled lithium niobate (PPLN) pumped by a acoustic-optical (AO) Q-switched Nd:YVO₄ laser. The widely tunable OPO output signal wavelength range from 1390 to 1605 nm, which was obtained by changing PPLN poling period from 27.8 to 31.6 μm at a certain temperature of 46°C, while the continuous tuning range was measured from 1475 to 1592 nm with the PPLN poling period of 30 μm by varying the temperature of nonlinear crystal PPLN from 50 to 120°C. The maximum output power of 0.92 W at 1534 nm with the minimum pulse width of 5.17 ns was generated under the incident pump power of 9.6 W at 808 nm. The corresponding peak power and single pulse energy were calculated to be 5.94 kW and 30.7 μJ, respectively. The M ₂-factor was measured to be 2.01 at the signal power of 0.4 W.     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

High efficiency continuous-wave single-frequency Nd:YVO<Subscript>4</Subscript> ring laser under diode pumping at 880 nm

An efficient single-frequency continuous-wave Nd:YVO₄ ring laser pumped at 880 nm is presented. With compact four-mirror ring cavity and optical isolator, we obtained an output power of 14.56 W at 1064 nm, corresponding to a slope efficiency of 61.7% and an optical-to-optical efficiency of 58.4% with respect to the absorbed pump power. The stability of the output power was better than ±0.5% over two hours. At the same time, a beam quality factor of M ²≈1.2 was measured and the line width of the longitudinal mode was about 25 MHz. To the best of our knowledge, this is the highest slope efficiency and optical-to-optical efficiency in single-frequency Nd:YVO₄ ring laser.     

All fiber MOPA laser-pumped,continuous-wave,mid-infrared,singly-resonant optical parametric oscillator based on periodically poled MgO-Doped LiNbO<Subscript>3</Subscript>

We report a continuous-wave (CW) mid-infrared singly resonant optical parametric oscillator (SRO) based on periodically poled MgO-doped LiNbO₃ (PPMgLN) pumped by a high power, single frequency fiber laser in master oscillator-power amplifier (MOPA) configuration at 1.064 μm. Using four-mirror ring OPO cavities, at the PPMgLN’s grating period of 30.5 μm and the temperature of 23°C, we achieved the maximum idler output power of 7.2 W at 3.4 μm when the pump power was 52.8 W. The total power-conversion efficiency from the pump to the idler in this experiment is about 13.6%, and corresponds to ∼44% of quantum-limited performance.     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

LD end-pumped c-Cut Nd:YVO<Subscript>4</Subscript>/KTP self-Raman laser at 560 nm

Intra-cavity sum frequency generation (SFG) of c-cut Nd:YVO₄ self-Raman laser was investigated for the first time. A 4 × 4 × 10 mm³ KTP crystal with a type-II phase-matching cutting angle (θ = 83.4°, φ = 0°) was used for SFG between the fundamental light at 1066 nm and first-Stokes light at 1178 nm. The laser system with different curvature radii of output couplers and different pulse repetition frequencies were investigated. At a pump power of 14 W and pulse repetition frequency of 20 kHz, the average output power of yellow-green laser at 560 nm up to 840 mW was achieved, corresponding to a slope efficiency of 7.6% and a conversion efficiency of 6% with respect to diode pump power.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

Continuous wave and passively Q-switched laser performance of a composite crystal bonded with three Nd:YVO<Subscript>4</Subscript> single crystals

The laser performance of a composite crystal bonded with three Nd:YVO₄ single crystals has been investigated for the first time as far as we know. The largest continuous wave output power of 2.68 W is obtained at the incident pump power of 6.2 W, giving an optical conversion efficiency of 43.1% and a slope efficiency of 45.9%. For passively Q-switched operation with Cr⁴⁺:YAG of 71% initial transmission, the shortest pulse width of 18.2 ns, the largest single-pulse energy of 19.9 μJ, and the highest peak power of 1.12 kW are achieved, with the pulse repetition rate being 44.9 kHz, at the incident pump power of 6.2 W. The composite crystal can generate more excellent laser performance, when compared with the single crystals.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> intracavity-doubled red laser at 693 nm

It is reported that efficient continuous-wave (CW) red laser generation at 693 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd:YVO₄ laser. With incident pump power of 18.2 W, output power of 278 mW at 693 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 278 mW, the output stability is better than 2.9%.     

All-solid-state 543 nm green laser generated by frequency doubling of a diode pumped Nd:YVO<Subscript>4</Subscript> laser at 1086 nm

An efficient and compact green laser at 543 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:YVO₄ laser at 1086 nm under the condition of suppression the higher gain transition near 1064 nm. With 10 W diode pump power and a frequency doubling crystal LBO, as high as 2.13 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 21.3% and the output power stability in 3 h is better than 2.27%.     

High-peak-power diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser

We report on a passively Q-switched diode-pumped Nd:YVO₄ laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M²<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it     

High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.