Iron deposition on the five-fold surface of the icosahedral Al-Pd-Mn quasicrystal

The room temperature adsorption behaviour of Fe on the five-fold surface of i-Al-Pd-Mn has been studied using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). A complex growth scenario for Fe adsorption on this substrate is observed with STM. At coverages up to about 3 MLE (monolayer equivalent), layer-by-layer growth is observed whereby small clusters and islands are formed which eventually coalesce into almost complete monolayers. No LEED pattern is observed, indicating that the layers are disordered. The AES results rule out intermixing. Above this coverage, there is a transition to a multilayer island growth mode. The islands are rotated by 72° and have the bcc(1 1 0) Fe structure. The results are compared with previous work on Fe adsorption on this substrate and on Al and Fe single crystal substrates.     

Growth mechanism and structure of ultrathin palladium films formed by deposition on Mo(100)

The growth mechanism, structure and thermal stability of monolayer and ultrathin Pd films formed by vapor deposition on Mo(100) were studied using AES, LEED, and TPD. Pd film growth at 150 K is described well by a Frank-van der Merwe (FM) or layer-by-layer growth mechanism with a small amount of layer disorder and/or non-ideal layering. The Pd monolayer is pseudomorphic with the Mo(100) substrate lattice as shown by LEED. Pd films deposited on Mo(100) at 450 and 600 K grow by forming three-dimensional (3D) islands on top of an initially formed Pd monolayer, i.e., a Stranski-Krastanov growth mode. Alloying could also explain the AES curves at these temperatures. Thermal desorption of Pd from multilayer films begins at 1250 K with an activation energy of 100 kcal/mol. This is 7 kcal/mol higher than the bulk sublimation energy of palladium due to interaction with the molybdenum substrate and was observed for films as thick as 20 layers. Pd desorption is kinetically limited by decomposition of a Pd-Mo alloy and/or diffusion of Pd from the subsurface layers of Mo to the surface. Annealing studies show that the Pd monolayer is stable to 1200 K, but that agglomeration of Pd into 3D islands and possibly alloy formation occurs upon heating thicker films above 400 K.     

Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth

Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10⁻² monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.     

The growth mode of aluminium on silver (111)

The geometric and electronic structures occuring during the growth of Al on a single crystal Ag(111) surface have been studied using a combination of low energy electron diffraction (LEED), Auger electron spectroscopy (AES), energy loss spectroscopy (ELS) and work function measurements. The Auger signal versus deposition time plots, which were used to monitor the growth mode, are shown to behave in an identical fashion to that expected for layer-by-layer (Frank-van der Merwe) growth. LEED was used to determine the lateral periodicity of thin Al films and shows that Al forms, at very small coverages, 2D islands which have the same structure as the Ag(111) substrate and which grow together to form the first monolayer. At substrate temperatures of 150 K a well defined (1 × 1) structure with the same orientation as the underlying Ag(111) can be seen up to at least 12 ML. After completion of the third monolayer the ELS spectrum approached that observed for bulk aluminium. At a coverage of 3 ML the work function decreases by 0.4 eV from the clean silver value.     

Lead growth on Si(111) surfaces reconstructed by indium

We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.     

A multitechnique surface science examination of Sn deposition on Pt(100)

Interfaces prepared by vapor deposition of Sn onto Pt(100) surfaces have been examined using the following techniques: Auger electron and X-ray photoelectron spectroscopy (AES and XPS), low-energy electron diffraction (LEED), and low-energy ion surface scattering (LEISS) with Ne⁺ ions. Tin deposition was conducted at 320 and 600 K, and the surface composition and order was examined as a function of further annealing to 1200 K. The AES uptake plots (signal versus deposition time) indicate that the Sn growth mode can be described by a layer-by-layer process only up to one adayer at 320 K. Some evidence of 3D growth is inferred from LEED and LEISS data for higher Sn coverages. For deposition at 600 K, AES data indicate significant interdiffusion and surface alloy formation. LEED observations (recorded at a substrate temperature of 320 K) show that the characteristic hexagonal Pt(100) reconstruction disappears with Sn exposures of 4.6 × 10¹⁴ atoms cm² (θ_Sn = 0.35 monolayer (ML)). Further Sn deposition results in a c(2 × 2) LEED pattern starting at a coverage of slightly above 0.5 ML. The c(2 × 2) LEED pattern becomes progressively more diffuse with increasing Sn exposure with eventual loss of all LEED features above 2.2 ML. Annealing experiments with various precoverages of Sn on Pt(100) are also described by AES, LEED, and LEISS results. For specific Sn precoverages and annealing conditions, c(2 × 2), p(3√2 × √2)R45°, and a combination of the two LEED patterns are observed. These ordered LEED patterns are suggested to arise from ordered PtSn surface alloys. In addition, the chemisorption of CO and O₂ at the ordered annealed Sn/Pt(100) surfaces was also examined using thermal desorption mass spectroscopy (TDMS), AES, and LEED.     

动力学晶格蒙特卡洛方法模拟Cu薄膜生长

利用动力学晶格蒙特卡洛方法模拟了Cu薄膜在Cu(100)面上的三维生长过程。模型中考虑了四个动力学过程:原子沉积、增原子迁移、双原子迁移和台阶边缘原子迁移,各动力学过程发生的概率由多体势函数确定。讨论了基底温度、沉积速率及原子覆盖率对Cu原子迁移、成核和表面岛生长等微观生长机制的影响;获得了Cu薄膜的表面形貌图并计算了表面粗糙度。模拟结果表明,随基底温度升高或沉积速率下降,岛的平均尺寸增大,数目减少,形状更加规则。低温时,Cu薄膜表现为分形的离散生长,高温时,Cu原子迁移能力增强形成密集的岛。Cu薄膜表面粗糙度随着基底温度的升高而迅速减小;当基底温度低于某一临界温度时,表面粗糙度随原子覆盖率或沉积速率的增大而增大;当基底温度超过临界温度时,表面粗糙度随原子覆盖率或沉积速率的变化很小,基本趋于稳定。     

Time-resolved observation of CVD-growth of silicon on Si(111) with STM

Scanning tunneling microscopy is used to study the epitaxial growth of silicon on Si(111)-(7×7) by Chemical Vapour Deposition (CVD) of disilane (Si₂H₆) at elevated substrate temperatures directly during the growth process. Different kinetic processes, as island nucleation, growth and coarsening and step flow have directly been imaged as a function of temperature and Si₂H₆ flow. On a substrate with a low defect concentration several growth modes depending on the flux and the total coverage are distinguished: the formation of multi-level islands as a transient mode leaving the substrate partially uncovered up to 20 bilayers, a transition to layer-by-layer growth when the multi-level islands initially formed coalesce and the formation of three-dimensional islands with tetrahedral shape at higher growth rates which are only metastable due to the presence of hydrogen at the surface. The equilibrium shape of two-dimensional islands is a hexagon whereas the kinetically influenced shape during growth is triangular.     

Ordering of Si atoms on the ten-fold surface of the decagonal Al72Ni11Co17 quasicrystal

The deposition of Si at room temperature on the ten-fold quasicrystalline surface of d-Al-Ni-Co has been investigated by scanning tunnelling microscopy. At a coverage of 0.30 ML, Si pentagons in two orientations related by inversion symmetry are observed on the same substrate terrace. The side-length of the pentagons is 4.2 ± 0.2 Å. At this coverage, the Si adlayer displays quasiperiodic order. Depressions related to pentagonal features observed in STM images of the clean d-Al-Ni-Co substrate are proposed as plausible adsorption sites for the Si adatoms. As the Si coverage is increased, the well-defined structures observed are no longer distinguishable. At coverages above the monolayer, the Si overlayer follows a rough three-dimensional growth mode.     

A quantitative ion-scattering study of the Ni(110) surface during the early stages of oxidation

The adsorption of oxygen on clean Ni(110) has been studied at room temperature and at 475 K by Rutherford backscattering, using the effects of channeling and blocking, and lowenergy electron diffraction. At both temperatures successive LEED structures are formed at low oxygen coverage (?0.5 monolayer). With increasing oxygen content stoichiometric NiO is formed on top of the Ni(110) surface, at room temperature as an amorphous layer and at 475 K as patches of crystalline oxide, oriented with the NiO(100) planes parallel to the Ni(110) surface plane. At 475 K the nickel atoms in the interface region between oxide and substrate are displaced over a thickness of less than 2 monolayers. Based on the measurement of the oxide composition as function of coverage we suggest a modification of the island growth model as proposed by Holloway and Hudson for the Ni(100) and (111) surfaces.     

Adsorption of nitrogen oxide molecules to the surface of nanosized nickel clusters formed on the (111) surface of a magnesium oxide film

The properties of the systems formed on deposition of Ni atoms on the (111) surface of a MgO film of thickness equal to six monomolecular layers grown on a Mo(110) crystal face and the adsorption of NO nitrogen oxide molecules to the system surface have been studied by methods of electron spectroscopy (AES, XPES, LEED, LEIBSS) and reflective infrared absorption spectroscopy. On deposition of Ni atoms on the surface of MgO at a substrate temperature of 600 K, three-dimensional islands of Ni are formed. The subsequent adsorption of NO results in molecule dissociation even at 110 K. The efficiency of this process depends on the morphology of the Ni layer.     

Growth and oxidation of aluminum thin films deposited on Ag(1 1 1)

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were used to study the first steps of growth and oxidation of aluminum on Ag(1 1 1) substrate. We find that the growth of aluminum at room temperature (RT) shows the formation of a complete monolayer (ML) in epitaxy with the substrate. After deposition at RT of one aluminum ML, the dissolution kinetics is recorded at 200 °C and the bulk diffusion coefficient is deduced. We also show that the oxidation at RT of one aluminum ML is very rapid, and that both aluminum and oxygen do not dissolve in silver up to 500 °C. From the AES intensities variations, we deduce the composition profile of the oxide layer which corresponds probably to the stacking …/Ag/Ag/Al/O.     

Au island growth on a Si(1 1 1) vicinal surface

Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.     

Peculiarities of the initial stage of growth of niobium-based nanostructures on a Si(111)-7 × 7 surface

The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed.     

InAs wetting layer evolution on GaAs(0 0 1)

The evolution of two-dimensional (2D) strained InAs wetting layers on GaAs(0 0 1), grown at different temperatures by molecular beam epitaxy, was studied by in situ high-resolution scanning tunneling microscopy. At low growth temperature (400 °C), the substrate exhibits a well-defined GaAs(0 0 1)-c(4 × 4) structure. For a disorientation of 0.7°, InAs grows in the step-flow mode and forms an unalloyed wetting layer mainly along steps, but also in part on the terrace. The wetting layer displays some local c(4 × 6) reconstruction, for which a model is proposed. 1.2 monolayer (ML) InAs deposition induces the formation of 3D islands. At a higher temperature (460 °C), the wetting layer is obviously alloyed even at low InAs coverage. The critical thickness of the wetting layer for the 2D-to-3D transition is shifted to 1.50 ML in this case presumably since the strain is reduced by alloying.     

Adsorption of bismuth on Si(110) surfaces

The adsorption of bismuth on Si(110) surfaces has been studied by means of quadrupole mass spectrometry (QMS), LEED and AES. The existence of three main adsorption states (the first, second and third phases) were observed. Two of them (the first and second phases) are two-dimensional phases and the other (the third phase) is a three-dimensional phase. After the completion of the first phase at a high substrate temperature, the LEED pattern showed a clear Si(110) 2 × 3 structure. A shift of the saturation coverage of the two-dimensional phase with the change of the deposition condition was also observed.     

AES analysis of copper growth on MnO

The growth of Cu film on MnO substrate at room temperature has been investigated using Auger electron spectroscopy. Analysis of the Auger peak intensity as a function of Cu coverage and comparison of the experimental results with predictions of a layer-by-layer growth model, suggest that, at least in the first 16 Å of coverage, the growth of copper takes place in a layer-by-layer mode, simultaneously with the diffusion of some copper in the MnO substrate.     

Growth of Sb overlayers on GaAs(110)

The GaAs(110)-Sb system is studied with AES, EELS, LEED, ellipsometric spectroscopy and SEM. As indicated by EELS Sb atoms are adsorbed first on Ga sites. The AES spectra can be explained by assuming a simultaneous growth of multiple layers on top of a well ordered homogeneous first monolayer (MSM growth mode). The results of ellipsometric spectroscopy confirm the inhomogeneity of the Sb-film as proposed by the MSM mode. Desorption experiments and EELS demonstrate a strong chemical bonding between the first Sb monolayer and the substrate.     

Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions

The growth of thin praseodymium oxide films on silicon (111) using small deposition rates under oxygen-deficient conditions was investigated in the range from submonolayer up to six monolayers coverage by transmission electron microscopy (TEM) and photoemission spectroscopy (PES). A detailed analysis of the silicon 2p and oxygen 1 s core level and valence band spectra reveals chemical reactions between deposited species, substrate, and the growing film. Silicate, silicide and oxide species are coexisting over the entire range of coverages investigated. Cross sectional TEM shows silicide inclusions extending from the surface several nanometers into the substrate and affecting the substrate band bending at the interface. The reactivity of the praseodymia overlayer leads to reactions in the as-deposited film even at room temperature and render it unstable. The article aims at providing a coherent picture of the chemistry proceeding during interface formation and film growth at low rates of deposition (0.06 nm/min). The results will be discussed in comparison to studies using higher rates, emphasizing the possibility of growth rate dependent reactions between substrate and deposited material and, consequently, distinctly different film compositions and structures for different rates of deposition.     

Theoretical analysis of the growth mode for thin metallic films on oxide substrates

We show how the growth mode of a thin metallic film on an insulating substrate can be predicted theoretically by combining thermodynamic considerations with ab initio calculations for ordered metal/insulator interfaces at low coverage. Our approach is illustrated by calculations for Ag film deposited on an MgO substrate. Ab initio calculations predict high mobility of adsorbed Ag atoms on MgO, even at low temperatures, which greatly aids their aggregation.