Eu3+配合物红色有机电致发光器件

合成了一种新型的Ｅｕ＾３＋配合物－Ｅｕ（ＢＡ）２（ＭＡＡ）（Ｐｈｅｎ）,并将其作为红光发射材料制备了结构为Ｇｌａｓｓ／ＩＴＯ／Ｅｕ（ＢＡ）２（ＭＡＡ）（Ｐｈｅｎ）／Ａ１ｒ的有机电致发光薄膜器件。这种材料具有很强的荧光和很好的单色性且比较强的电致发光。器件的开戾电压为１２Ｖ。在电压为２６Ｖ的正向驱动下,器件的亮度为１５ｃｄ／ｍ＾２,发光效率为０．２５１ｍ／Ｗ。结合测量粉末、薄膜状态下的荧光光谱、激发     

稀土配合物有机电致发光

稀土元素具有独特的电子层结构，是一类丰富的发光材料宝库。将稀土配合物应用于有机电致发光显示器件（OLED）对于实现全彩色显示具有重要意义。与通常的有机电致发光显示器件相比。稀土配合物有机电致发光器件具有高色纯度发射和高内量子效率的优点。本文概述了稀土配合物分类、稀土配合物有机电致发光器件研究进展和优点，着重研究了稀土离子及其OLED器件的发光机理。     

稀土有机配合物电致发光器件的研究进展

概述了稀土有机配合物电致发光薄膜器件的材料、结构、发光机理以及目前研究的状况、出现的问题和研究的发展趋势.     

一类有机配合物的蓝色电致发光

将一类有机配合物ＮＧＣ溶于氯仿中,加入少量ＰＭＭＡ后用旋涂法制得单层薄膜电致发光器件,得到了稳定的蓝色发光。在这些配合物中掺入适量ＰＰＶ衍生物,可将蓝色发光提高几十倍,这归结于载流子的平衡注入。     

有机金属配合物电致发光材料

介绍有机金属配合物在有机电致发光中的应用。     

一种基于液晶性质的Pt配合物磷光材料电致发光器件

采用聚合物掺杂的方式,利用旋涂工艺制备了ITO/PVK:TOPPt/BCP(20 nm)/Mg:Ag(200 nm)结构的有机电致发光器件(OLED)。对掺杂浓度为2%(器件A)和4%(器件B)的磷光聚合物掺杂体系的光致发光(PL)和电致发光(EL)性质进行了分析研究,并对主体材料PVK到磷光客体材料TOPPPt的能量传递机制进行了讨论。实验表明,器件的EL谱谱峰位于625 nm,器件A在25 V时最大亮度为3037 cd/m2,最大电流效率为3.15cd/A。器件的EL谱不会随着偏置电压和掺杂浓度而改变,器件具有较好的稳定性。     

基于Re(Ⅰ)配合物有机电致发光器件的研究进展

Re(Ⅰ)配合物能够产生较好的自旋轨道耦合,其内量子效率在理论上可以达到100%,比荧光材料高3倍。因其具有相对短的激发态寿命、室温下高的磷光量子效率、较好的热稳定性和化学稳定性等优点使其被广泛关注。文章对Re(Ⅰ)配合物在有机电致发光器件中的研究进展进行了综述,并对Re(Ⅰ)配合物分子设计与电致发光器件的发展前景进行了展望。     

一种新型插层结构的有机电致发光器件

报道了一种新型插层结构的有机电致发光器件(OLED),LiF(1 nm)/Al(5 nm)插层作为半反射镜,与LiF(1 nm)/Al(100 nm)作为全反射镜面的阴极构成平面Fabry-Perot(F-P)型微腔,所用发光层材料为Zn(salen),器件的结构为:ITO/CuPc/NPD/Zn(salen)/Liq/LiF/Al/CuPc/NPD/ Zn(salen)/Liq/LiF/Al,其最大发光亮度和电流效率分别达674 cd/m2 和 2.61 cd/A,半峰宽(FWHM)为48 nm.与传统结构器件相比,色纯度、发光亮度和发光效率等性能指标均得到了优化.     

白光有机电致发光器件的研究

白光有机电致发光器件在显示和照明领域有着极大的应用前景，受到人们广泛的关注。本文对白光有机电致发光器件的结构、工作原理、工艺流程、存在的问题等进行了简单的概述，力求总结出制备白光有机发光器件的新途径。     

有机电致发光器件发展近况

简述目前正在研制开发中的有机薄膜电致发光器件，着重介绍器件所用的分子材料，包括大分子和小分子材料以及器件的单层和多层结构形式，在光发射稳定性进一步改进之后，该类型器件将有希望应用在大面积发光显示方向。     

绿红双发光层有机电致磷光器件的载流子调控研究

制备了结构为ITO/MoO3(40nm)/NPB(40nm)/TCTA(10nm)/CBP∶GIR1(14%)(x)/CBP∶R-4B(6%)(30-x)/BCP(10nm)/AlQ(40nm)/LiF(1nm)/AL(100nm)的绿红磷光器件。通过调节红绿发光层的相对厚度,对器件的发光性能进行了研究。结果表明:x为15nm,电压为6V,电流密度为255.6mA/cm2,得到最高电流效率为15.4cd/A,红色发光峰值强度相对较大,绿色峰值稍弱的电致发光光谱。分析原因可能是掺杂染料与临近层的能级匹配和浓度等会影响发光层载流子注入与传输;空穴及电子阻挡层对发光层内载流子和激子的有效限制作用会提高掺杂染料在发光层的复合几率;另外,CBP的空穴迁移率大于电子迁移率,发光的主要区域位于发光层与BCP界面,掺杂于该区域的R-4B具有较高的发光强度。     

用BPhen作基质的铕配合物OLED发光机制研究

用具有良好电子传输/空穴阻挡性能的BPhen(4,7-diphenyl-1,10-phenanthroline)作基质,Eu(DBM)3pyzphen(pyzphen=pyrazino-[2,3-f][1,10]-phenanthroline,DBM=Dibenzoylmethane)作发射材料,成功制得了高效率、高亮度的有机电致发光器件OLED.器件的最大外量子效率为2.5%,最大电流效率为5.3 cd/A,最大亮度为1 320 cd/m2.在亮度为200和1 000 cd/m2时,器件的色坐标分别为(0.66,0.33)和(0.65,0.34).深入研究了该器件的发光机制,发现在电致发光(EL)过程中,载流子直接被Eu(DBM)3pyzphen陷获是主要的发光机制,同时在BPhen与Eu(DBM)3pyzphen间还存在着有效的能量传递.     

芳基取代蒽衍生物的合成及发光性能研究

为提高有机电致发光材料热稳定性和发光效率,设计合成了新型萘基蒽类蓝光材料。以9-溴-10-(2-萘基)蒽为原料,分别同4-(1-萘基)苯硼酸和4-(2-萘基)苯硼酸在四(三苯基膦)钯催化下进行Suzuki偶联,合成10-(2-萘基)-9-(4-(1-萘基)苯基)蒽(NPNA-1)和10-(2-萘基)-9-(4-(2-萘基)苯基)蒽(NPNA-2)。采用红外、核磁对其结构进行表征,通过TG、DSC分析对其热稳定性进行研究,采用紫外和荧光光谱对其光谱性能进行表征。在波长378nm波长光激发下,二者均显现出了强发光性能,NAPA-1的λ_(max)为424nm,NAPA-2的λ_(max)为428nm,均为优秀的蓝光材料。     

Gaq3有机薄膜电致发光器件

首次报道了采用８－羟基喹啉镓螯合物作为发光层制备有机薄膜电致发光器件，器件的结构为：ＩＴＯ导电玻璃／ＴＰＤ／Ｇａｑ３／Ａｌ。研究了Ｇａｑ３薄膜的光致发光和器件的电致发光机理，同时测量和研究了器件的电流密度－－电压（Ｊ－Ｖ）特性和发光亮度－电压（Ｂ－Ｖ）特性。结果表明器件的电致发光峰值波长为５４０ｎｍ，在２０Ｖ直流电压驱动下的最大发光亮度约２５００ｃｄ／ｍ＾２明显高于上同结构和工艺参数制备的Ａｌｑ３     

Organic electroluminescent characteristics of PS:NPB composite hole transporting layer

Green organic light-emitting devices with a structure of indium-tin-oxide (ITO)/polystyrene (PS):N, N' -bis-(3-naphthyl)-N, N' -biphenyl-( 1,1' -biphenyl)-4,4' -diamine (NPB)/tris-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag were fabricated. A doping system consisting of small-molecular hole transporting material NPB and polymeric matrix PS was applied as a composite hole transporting layer (HTL), and the thin film preparation was simplified via spin-coating technique. By adjusting the component ratio of the doping system, several devices with different concentration proportion of PS:NPB are constructed. The electroluminescent characteristics of the devices were investigated and discussed. This study demonstrated that the difference of doping concentration of NPB has a remarkable impact on the optoelectronic performance of both HTL and the devices. Optimum device performance can be obtained by choosing a suitable concentration proportion of PS:NPB at 1:1. This study contributes to the construction of composite functional layers of organic light-emitting diode (OLED) devices and to the technical modification.     

Improved performance of mixed single layer top-emission organic light emitting devices using capping layer

The performance of top-emission organic light emitting devices (TEOLEDs) can be improved by using a thin capping layer on top of the semitransparent metal electrode. We investigated the emission properties of inverted mixed single layer TEOLEDs with the same device structure but different capping materials. The thickness of capping layer was optimized by calculation. The power efficiency of device was 2.5 times enhanced when 45 nm TPD capping layer was added. The enhancement is not simply dependent on the transmittance and reflectance of the top contact, but also on other complex phenomena such as the interference effects in the device. The results of properties and dependence of EL spectra on viewing angle for all devices indicated that the large enhancement factor may be related to the complex interference phenomenon in our mixed single layer devices due to the emitter center and recombination region is different from conventional heterojunction devices.     

Efficient white organic light-emitting device based on a thin layer of hole-transporting host with rubrene dopant

A white organic light-emitting device (WOLED) in which a yellow fluorescent dye, rubrene (5,6,11,12-tetraphenylnaphthacene), is doped into a thin layer of traditional hole-transporting material NPB {4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl} is fabricated. The device has a simple structure of indium tin oxide (ITO)/CuPc/NPB/NPB: 0.7 wt.% rubrene/TPBI/lithium fluoride (LiF)/Al, where CuPc (copper phthalocyanine) and TPBI {2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1H-benzimidazole]} are used as the hole-injecting layer and electron-transporting and hole-blocking layer, respectively. The device exhibits peak efficiency of 3.7 cd/A (2.1 lm/W) at 5.5 V and maximum brightness of 8200 cd/m² at 20 V. The Commission Internationale de l’Eclairage (CIE) coordinates of (0.291, 0.303) are determined at 6 V. When the bias increased from 6 V to 14 V, the colour coordinates shifted only by 2%, which is presumably related closely to the thickness of the doped NPB layer. Besides, the electroluminescent (EL) efficiency can also be improved by decreasing the thickness of the doped NPB layer. The mechanisms of generating stable white colour and improving EL performances are also discussed.     

具有复合空穴传输层的高效低压有机电致发光器件

报道了用m-MTDATA掺杂NPB作复合空穴传输层(c-HTL)的高效率、低电压有机电致发光器件(OLED),器件的最高发光效率达到了5.3cd/A,比NPB作HTL的器件(3.4cd/A)提高了约50%.这是由于c-HTL具有较低的空穴迁移率,改善了发光层中两种载流子的平衡,从而提高了器件性能.进一步在ITO与c-H...     

基于CuBB为阴极缓冲层有机太阳能电池性能的研究

通过定向合成Cu(I)配合物,首次将 其作为阴极缓冲层引入到有机太阳能电池(OSCs)中。实验分析发现,OSCs的光电能量转换效 率(PCE)与CuBB层厚度紧密相关,在标准太阳 光照条件下,结构为ITO/CuPc (20nm)/C60(40nm)/CuBB (x m m)/Al (100nm)的器件PCE随着CuBB厚度的增加 先增大后变小,当厚为8nm 时PCE达到0.94%。器件性能提高的原因主要是CuBB具有良好 的电子迁移率,但厚度过大时则由于串联电阻增加及电子不能经阴极缓冲层传输而使性能降 低。