Photoluminescence of AgGaS2 and CuGaS2 doped with rare-earth impurities

Photoluminescence (PL) related to rare-earth (RE) impurities (Ho, Er and Eu) in AgGaS₂ and CuGaS₂ crystals has been studied. In Ho-doped AgGaS₂ and CuGaS₂, two series of PL lines are observed in 1.86–1.92 eV region and 2.24 eV region, and they are assigned to ⁵F₃–⁵I₇ and ⁵S₂–⁵I₈ transitions of the Ho³⁺ ion, respectively. Similarly, in Er-doped AgGaS₂ and CuGaS₂, Er³⁺-related two PL series are observed: 1.83–1.88 eV region (⁴F_9/2–⁴I_15/2) and 2.22–2.26 eV region (⁴S_3/2–⁴I_15/2). For both Ho and Er impurities, the profile of the PL spectrum in AgGaS₂ is complex, and PL exhibited large number of lines compared with that in CuGaS₂. The differences in PL spectra between this two compounds are related to the crystal field at the cation site and the local atomic arrangement of the RE impurities. This work also refers to the PL band at 2.28 eV observed for the Eu-doped AgGaS₂ crystal.     

Photoluminescence studies on porous silicon/polymer heterostructure

Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations.     

Photoluminescence properties of impurity-doped ZnS nanocrystals fabricated by sequential ion implantation

We have studied photoluminescence (PL) spectrum and dynamics of Cu- and Al-doped ZnS (ZnS:Cu,Al) nanocrystals fabricated by sequential implantation of Zn⁺, S⁺, Cu⁺, and Al⁺ ions into Al₂O₃ matrices. These samples exhibit intense green PL under UV light excitation. The space- and time-resolved PL measurements show that the broad green PL is due to the donor–acceptor (DA) pair luminescence of single ZnS:Cu,Al nanocrystals.     

Photoluminescence and luminescence excitation spectra in ZnSiP2

Summary Measurements of photoluminescence and luminescence excitation spectra of ZnSiP₂ have been performed at 4.2K and two results were obtained. One is the observation of a new sharp emission line at 1.980 eV, due to the bound exciton associated with the pseudodirect gap. The other is the observation of another new series of absorption lines in the luminescence excitation spectrum of an emission line, at 1.984 eV, in addition to those reported previously. These results indicate that in ZnSiP₂ radiative transitions occur at both the indirect and the pseudodirect gaps. Paper presented at the ?V International Conference on Ternary and Multinary Compound?, held in Cagliari, September 14–16, 1982.     

组分对Cu-Zn-In-S/ZnS核壳量子点发光性能的影响

利用热注射法通过调控Cu/Zn比例制备了不同组分的Cu-Zn-In-S/ZnS核壳量子点,通过紫外-可见吸收光谱以及稳态和时间分辨光谱分析Cu/Zn比例对量子点发光性能的影响.结果表明,不同组分Cu-Zn-In-S/ZnS核壳量子点呈现闪锌矿结构且晶粒尺寸接近;随着Cu/Zn比例的减小,Cu-Zn-In-S/ZnS核壳量子点的带隙变宽,导致吸收光谱发生蓝移;当Cu/Zn比例从6/1减小到1/6时,量子点的发光峰位从640nm蓝移529nm.由于Zn2+替代Cu+能够减少Cu原子缺陷的形成,从而提高了量子点的荧光效率;当Cu/Zn=1/6时,样品中观测到Cu+离子发光和较长的荧光寿命.     

氧化锡纳米线的拉曼光谱和光致发光光谱研究

用表面限制剂对水热法生成的前驱物加以限制生长的方法成功制备了氧化锡纳米线结构,TEM和HRTEM的结果表明该纳米线由沿[001]方向生长的氧化锡单晶组成,纳米线直径在5-10纳米、长度100-500纳米。利用拉曼光谱和发光光谱对其生长过程和发光现象进行了详细的研究,结果表明,细长的氧化锡纳米线出现356、515、691 cm-1新的拉曼振动模以及600 nm较强的光致发光。     

Photoluminescence of the layered compound CdInGaS4

Summary The photoluminescence of the layered compound CdInGaS₄ was measured and analysed. The broad emission band at about 1.95 eV was found to be composed of three bands peaking at 2.16, 1.98 and 1.76 eV at 4.8K. These bands are due to free-to-bound or donor-to-acceptor transitions. We have found a new emission band peaking at 2.38 eV. This band shows that peak intensity markedly depends on the position in the crystal and is related to localized centres. The origin of the centres is discussed. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

SiOx纳米管的制备及其发光特性

以液态金属镓为媒介,利用热蒸发法合成大量非晶SiOx纳米管,这些纳米管管径均匀分布,平均约80 nm,长度大于10μm,且管内外径比例较小．分析发现,在实验过程中,熔入金属镓液滴中的硅元素和氧元素结合并从液滴的表面饱和析出,形成以镓为中心的非晶SiOx纳米管状结构．在室温中,利用260 nm的激发光源激发SiOx纳米管,发现在蓝光波段附近发出强而稳定的PL谱线,这可能与样品中的氧缺陷和空位有关．     

Synthesis, Fabrication, and Photoluminescence of CaF2 Doped with Rare Earth Ions

Ambient condition wet synthetic techniques were used to synthesize CaF₂ doped with europium and erbium. Photoluminescence spectroscopy and energy-dispersive x-ray analyses were used to study the electronic states of rare earth (RE) ions and the degree of heterogeneity/homogeneity in the matrix. Raman spectroscopy was used to study the degree of crystallinity of CaF₂. Effects on the photoluminescence spectra were studied as a function of the thermal treatment of CaF₂ samples.     

多方法制备纳米ZrO2及其光谱特性研究

利用水热法、醇热法、溶胶-凝胶法、微波法和超声法分别制备了纳米ZrO2。使用X射线(X-raydif-fraction)和荧光光谱(PL-Photoluminescence)对样品结构及发光特性进行了表征。不同方法制得稳定的四方相氧化锆纳米微粒,由X射线衍射(XRD)看出产物结晶良好,且粒径较小。测试样品的光致发光谱(PL),发现样品在254和412nm激发光激发时发光效率较高,可以观察到明显的红光和蓝光。对采用不同方法制备的样品,对其性质进行研究和比较。在固体发光特别是半导体发光理论基础上对氧化锆发光特性给出了一定解释,最后对纳米材料光学特性理论模型的建立进行了初步探讨。     

Mn2+, Pb2+共掺杂ZnS纳米材料制备及光致发光

采用聚乙烯基吡咯烷酮(PVP)为表面包覆剂,在室温大气条件下的水溶液中制备了ZnS:Mn,Pb纳米晶。讨论了Mn²⁺和Pb²⁺掺杂量对ZnS纳米发光材料光致发光强度的影响,确定了Mn²⁺和Pb²⁺掺杂量相对于Zn²⁺的最佳的量的比,并对其发光机理进行了初步的探讨。     

WSe2/GeS 异质结的增强光致发光

二维半导体材料为纳米尺度的光学性质研究提供了良好的支持. 当将其构筑成异质结时, 界面间的相互作用可以改变原光电性质或产生新的性质, 是二维材料光电子器件功能控制的重要手段. 利用机械剥离法制备WSe2/GeS 异质结, 通过发光光谱研究异质结层间激子的光学性质. 结果表明:p 型 GeS 与弱 n 型 WSe2 构筑成异质结时会产生新的层间激子. 与 GeS 和 WSe2 的荧光发射强度相比, 异质结的层间激子发光强度显著增加. 此研究为设计具有先进光电性能的二维半导体器件提供了思路.     

表面活性剂修饰多孔硅的光致发光光谱

分别利用4种不同的表面活性剂对多孔硅进行表面修饰,结果表明油酸钠溶液、CPB溶液和乳化剂OP溶液修饰的多孔硅样品发光减弱,SDS溶液修饰的多孔硅样品发光增强,不同浓度的SDS溶液的增强倍数也不同。这种现象不仅可以为研究多孔硅的发光机制提供新的依据,还为提高多孔硅的发光效率提供了一个新的有效途径。     

Photoluminescence of a soluble polypyrrole based on N-vinylpyrrole

Photoluminescence of a novel polypyrrole based on N-vinylpyrrole was systematically observed in organic solutions. The polymer, which has a unique molecular structure, exhibited good photoluminescence in organic solutions. The emission peak of the polymer exhibited one strong green emission band at around 510 nm in common organic solutions. The maximum fluorescence quantum yield of the polymer was found to be 0.16 in NMP solution with fluorescein as standard. At the same concentration, the photoluminescence intensity increased in the order of CHCl₃, THF, DMSO, CH₂Cl₂ and NMP. The photoluminescence spectrum had a slight red shift as the polarity of the solvents increased. The photoluminescence intensity also increased with the polarity of the solvent, except DMSO. This is because of its hygroscopicity in air and its viscosity. In THF solutions, the photoluminescence intensity increased until the concentration reached a certain weight percent (3.0×10⁻² wt.%) and then decreased with higher concentrations. This was most likely due to quenching in the aggregate phase. Furthermore, iron ion was a quencher in the DMSO solution. In a mixed solvent system of DMSO and water, water showed a typical quenching effect.     

Photoluminescence of Cu-doped and Cu-doped ZnS nanocrystallites

ZnS:Cu⁺ and ZnS:Cu²⁺ nanocrystallites have been obtained by chemical precipitation from homogeneous solutions of zinc, copper salt compounds, with S²⁻ as precipitating anion formed by decomposition of thioacetamide. X-ray diffraction (XRD) analysis shows that average diameter of particles is about 2.0-2.5 nm. The nanoparticles can be doped with copper during synthesis without altering XRD pattern. However, the emission spectrum of ZnS nanocrystallites doped with Cu⁺ and Cu²⁺ consists of two emission peaks. One is at 450 nm and the other is at 530 nm. The absorptive spectrum of the doped sample is different from that of un-doped ZnS nanoparticles. Because the emission process of the Cu⁺ luminescence center in ZnS nanocrystallites is remarkably different from that of the Cu²⁺ luminescence center, the emission spectra of Cu⁺-doped samples are different from those of Cu²⁺-doped samples.     

Photoluminescence polarization of semiconductor nanocrystals

We review the polarization properties of photoluminescence (PL) in nanocrystals (NCs) from both theoretical and experimental points of view. We show that, under linearly polarized excitation, NCs emit partly polarized light owing to their uniaxial structure or their anisotropic shape. In elongated NCs, the anisotropy may have two origins, the electronic confinement or the effect of depolarizing field created by the light-induced charges on the interfaces. Results of polarization studies in porous silicon are presented. They are explained by the shape of the Si NCs. Experiments in CdSe NCs reveal the fine structure of the excitonic levels and show evidence of the enhancement of the electron-hole exchange energy with decreasing NC size. Spin orientation in wurtzite-type NCs is achieved by optical pumping with circularly polarized light. The effect of a magnetic field on the degree of circular polarization and the mechanisms of spin relaxation are discussed. Results in large-size NCs are presented.     

Photoluminescence characteristics of ZnS nanocrystallites co-doped with Cu and Cd

ZnS nanocrystallites co-doped with Cu²⁺ and Cd²⁺ have been prepared by precipitation from homogeneous solutions of transition metal (Zn²⁺, Cu²⁺ and Cd²⁺) salt compounds, with S²⁻ as precipitating anion formed by decomposition of thioacetamide (TAA). X-ray diffraction (XRD) patterns of the samples show that the average crystallite size of the doped and undoped ZnS nanocrystallites is Novel luminescence phenomena (green emission) have been observed from the co-doped ZnS nanocrystals. The photoluminescence (PL) property of the co-doped samples is significantly different from that of ZnS nanocrystallites doped with Cu²⁺ or Cd²⁺.     

Optical properties of electroluminescent ZnS doped with Cu+, Mn2+ and Gd3+ ions

ZnS:Gd, ZnS: Cu, Gd and ZnS: Mn, Gd phosphors have been prepared by firing the samples in argon atmosphere. Spectral distributions in these phosphors are discussed with appropriate mechanism. ZnS:Cu, Gd and ZnS:Mn, Gd are found to be examples of multiple band phosphors. Enhancement and quenching of the emission band intensities of all these phosphors have been studied inpel emission. It is observed that Gd³⁺ ions play an important role in transferring their excitation energy to other centres. The voltage and frequency variation ofel brightness are in agreement with collision excitation mechanism in Schottky barrier at the metal semiconductor interface. Studies in phosphorescence and thermoluminescence of these phosphors have also been carried out. It is observed that trap-depth changes slowly with temperature and dopant concentration. The values of trapping parameters have been evaluated. The irregular variation of the life-time of electrons in the traps. with temperature shows the existence of retrapping in these phosphors.     

Photoluminescence of ion-implanted phosphors

Ion-implanted phosphors were prepared by implanting Sb in CaS at 25 keV with concentration ranging from 0.05 to 0.2% by weight. Samples of similar concentration were also prepared using the conventional technique. The spectral response under UV excitation of both types of samples is compared.