Evidence for high temperature electron-hole droplets in heavily doped silicon

The photoluminescence spectrum of silicon containing 2.0 × 10¹⁸ phosphorous atoms/cm³ is studied as a function of temperature in the range 1.5 K?T?80 K. A threshold temperature is not observed for the electron-hole droplet photoluminescence line. The results indicate that the impurity band becomes unstable with increasing temperature and disappears abruptly at about 51 K.     

Thermoreflectance investigation of heavily doped silicon

The effect of the presence of high concentrations of dopants on the interband spectra of silicon has been studied by means of thermoreflectance. Heavy doping has been performed through ion implantation and eventually laser annealing. From the analysis of the thermoreflectance spectra a wide set of parameters characterizing in particular the E₁andE₂ structures has been obtained.     

Electron mobility in heavily doped silicon

We have calculated the mobility of conduction electrons in heavily doped n-type silicon. The Thomas-Fermi screening and the Born approximation are employed. The dependence of the effective mass on carrier density determined empirically is considered. The results are compared with experimental data obtained recently.     

Infra-red properties of bulk heavily doped silicon

Summary In this work reflectance (R) and thermoreflectance (TR) spectra in the infra-red of bulk P and B heavily doped silicon samples are reported and discussed. The values of the scattering time and of the effective mass, as well as the temperature derivative of the plasma frequency, scattering time and high-frequency dielectric constant are extracted from the data and analysed in terms of free-carrier-photon and free-carrier-impurity interaction.

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Riassunto In questo lavoro sono riportati e discussi gli spettri di riflettanza (R) e termoriflettanza (TR) in infrarosso di campioni di silicio drogati pesantemente per diffusione con P e B. Dai dati sono ricavati i valori dei tempi di rilassamento e della massa effettiva, come pure la derivata in temperatura della frequenza di plasma, del tempo di rilassamento e della costante dielettrica ad alta frequenza, che sono analizzati sulla base delle interazioni fra portatori liberi e fononi e fra portatori liberi e impurezze.

     

Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Nuclear spin-lattice relaxation in heavily doped silicon

The anomalous temperature and magnetic field dependences of spin-lattice relaxation time were observed in heavily phosphorus doped silicon. These anomalies should be attributed to the dynamical nature of the highly correlated electron gas which contributes to metallic impurity conduction.     

A silicon donor layer in heavily doped GaN

The properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 × 10¹⁹ cm^?3; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises.     

Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

We report the results of growth kinetics of oxidation process on niobium thin film surfaces exposed to air at room temperature by using a surface sensitive non-destructive X-ray reflectivity technique. The oxidation process follows a modified Cabrera-Mott model of thin films. We have shown that the oxide growth is limited by the internal field due to the contact potential which develops during the initial stage of oxidation. The calculated contact potential for 100 and 230 Å thick films is 0.81 ± 0.14 and 1.20 ± 0.11 V respectively. We report that 40% increase in the contact potential increases the growth rate for the first few mono layers of Nb₂O₅ from ∼2.18 to ∼2790 Å/s. The growth rates of oxidation on these samples become similar after the oxide thicknesses of ∼25 Å are reached. We report on the basis of our studies that a protective layer should be grown in situ to avoid oxidation of Nb thin film surface of Nb/Cu cavities.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors

The infrared transmissivity of heavily dopedp-type contact layers on silicon was studied in the 3–5 μm and 8–14 μm wavelength range in order to optimise the layer thickness and doping concentration for antireflection coating. The transmissivity of surface layers and buried layers was computed taking into account the free carrier optical dispersion by the Drude theory and corrections due to intervalence band transitions as well as multiple reflections and interferences in the layer. The computations are in quantitative agreement with measurements on contact layers formed by multiple boron implantation. It was found that the free carrier absorption loss completely cancels the gain due to the antireflection effect for a surface layer. Transmissivities of around 73% may be obtained by a buried heavily doped layer.     

Low temperature plasma production of hydrogenated nanocrystalline silicon thin films

The hydrogenated nanocrystalline silicon (nc-Si:H) thin films were produced by capacitively-coupled plasma enhanced chemical vapor deposition (PECVD) technique at low substrate temperatures (T_s ≈ 40–200 °C). Firstly, for particular growth parameters, the lowest stable T_s was determined to avoid temperature fluctuations during the film deposition. The influence of the T_s on the structural and optical properties of the films was investigated by the Fourier transform infrared (FTIR), UV–visible transmittance/reflectance and X-ray diffraction (XRD) spectroscopies. Also, the films deposited at the center of the PECVD electrode and those around the edge of the PECVD electrode were compared within each deposition cycle. The XRD and UV–visible reflectance analyses reveal the nanocrystalline phase for the films grown at the edge at all T_s and for the center films only at 200 °C. The crystallinity fraction and lateral dark conductivity decrease with lowered T_s. FTIR analyses were used to track the hydrogen content, void fraction and amorphous matrix volume fraction within the films. The optical constants obtained from the UV–visible transmittance spectroscopy were correlated well with the FTIR results. Finally, the optimal T_s was concluded for the application of the produced nc-Si:H in silicon-based thin film devices on plastic substrates.     

Notes on the negative temperature coefficient of resistance and superconductivity of niobium nitride thin films

NbN thin films have been studied which exhibit both a negative TCR in the normal state and superconductivity. The disappearance of superconductivity along these films appears to be caused by the onset of strong localization of the electronic states in the interislandic regions.     

Thermally stimulated currents in thin films of silicon monoxide doped with metallic impurities

We have determined the median values of the relaxation time and activation energy of thermally stimulated charges in silicon monoxide doped with metallic impurities. The results are compared with those obtained from alternating current experiments.     

Analysis of thin thermal silicon nitride films on silicon

We have investigated the chemical and electrical properties of very thin (<32 Å thick) silicon nitride films grown by rapid thermal nitridation of silicon. These films were of interest as a possible means of tailoring the barrier heights of silicon Schottky barrier diodes. Auger and XPS analysis showed that the level of oxygen contamination in the films was very low ([N]/[N]+[O]) =0.85 to 0.95). The oxygen is located primarily at the surface and interface of the films. Metal-nitride-silicon devices were characterized by I-V and C-V techniques. These measurements indicated an increase in barrier heights to p-type substrates and a decrease in barrier heights to n-type substrates compared to values measured in the absence of the nitride layers. The magnitude of the change in barrier height increases with increasing nitride thickness. The barrier height can be varied reproducibly over a wide range. For molybdenum on p-type, this range is greater than half the bandgap. For titanium and molybdenum on p-type diodes, barrier heights higher than 1.0 V can be achieved. These measurements could be explained by a reduction in the density of silicon interface states with increasing nitride thickness or by the presence of positive fixed charge in the nitride layer.     

Electrochromic properties of spray-deposited niobium oxide thin films

Niobium oxide thin films were deposited on the glass and fluorine-doped tin oxide (FTO)-coated glass substrates using simple and inexpensive spray pyrolysis technique. Various preparative parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain good substrate-adherent and transparent films. Morphological and structural characterizations of the films were carried out using scanning electron microscopy and X-ray diffraction techniques. Electrochemical characterization of the niobium oxide thin films was carried out using cyclic-voltammetry, chronoamperometry and chronocoulometry.     

Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature. The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted Si Ge crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors.     

Upper critical field of niobium nitride thin films

The temperature dependences of the superconducting transition of niobium nitride (NbN) thin films have been investigated via the first harmonic of the voltage in dc magnetic fields of up to 8 T. The temperature dependence of the second critical field of NbN has been determined. The parameter responsible for the effect of spin paramagnetism in this material and the temperature dependence of the upper critical field that describes well the experimental data have been found in terms of the Werthamer–Helfand–Hohenberg (WHH) theory. The key parameters of the superconductor have been estimated from the transport and optical measurements.