金属包层对称平面单轴晶体波导的模式场(Ⅱ)

对于晶体光轴平行于波导界面的结构,讨论了光在金属包层对称平面单轴晶体波导(波导层是单轴晶体,两个波导界面均为金属)内的传输特性.解析地得到了这种结构下波导模式场的精确解.模式场的性质因单轴晶体的性质不同而异.对于正单轴晶体,波导的主模是横电波,任何频率的光波均可激励该模式;当频率满足一定条件时,波导内传输单模,否则,将激励起高阶模式.高阶模既非TE波,也非TM波,而是两者耦合而成的混合模.对于负单轴晶体,波导的主模是一种混合模,该模式同样可被任何频率的光波所激励;当频率满足一定条件时,波导内传输单模,否则 关键词： 平面金属波导 单轴晶体 模式场 混合模     

非对称金属包覆左手介质平板波导的微扰分析

基于微扰方法分析非对称金属包覆左手介质平板波导的特性,给出了该波导的复有效折射率的一级近似解,并对波导的传输特性和损耗特性进行了数值模拟.结果表明:非对称金属包覆左手介质平板波导没有零阶模式;TE1模传播系数随波导厚度的增加迅速减小,损耗系数随波导厚度的增加快速增加,达到最大值后又迅速减小;非对称金属包覆左手介质平板波导传输特性相对于左手介质三层平板波导传输特性发生了很大改变,TM1模,TM2和 TE2模式以及更高阶模式在截止厚度附近出现双值现象;特别在二阶及高阶模式中,TE模式相对于TM模式具有高传输低损耗的特性,而以右手介质为芯层的金属包覆波导不具有这一特性.     

InGaAs/InAlAs多量子阱脊形波导及定向耦合器光波特性准矢量分析

提出了一种基于级数展开的三维准矢量束传播法(SE-QV-BPM)用以分析由InGaAs/InAlAs多量子阱构成的脊形光波导及定向耦合器.结果表明，刻蚀深度相同时，TM模比TE模在水平方向限制强，且TM模的模场在波导角上出现畸变；波导间距相同时，定向耦合器TM波的耦合长度大于TE波的耦合长度，对偏振态敏感.分析获得了浅/深刻脊形光波导承载的准矢量TE/TM基模、定向耦合器承载的TE/TM偶/奇模的模场分布及其有效折射率，模拟了光场在定向耦合器中的传输演变情况.另外，SE-QV-BPM导出矩阵小，计算效率高 关键词： 级数展开 准矢量束传播法 多量子阱 InGaAs/InAlAs     

石墨烯TE模表面等离子体波和表面等离子体波导的特性

基于含石墨烯的双/三层介质结构中的光学色散方程,研究了覆层和基底层材料对石墨烯表面等离子体波横电(TE)模的影响。计算结果表明,近红外波段内,石墨烯表面等离子体波TE模的性质对覆层和基底层介电常数的差值极其敏感。当覆层和基底层介电常数出现微小差异时,TE模可以进行传输。随着两介电常数差值的增大,TE模的有效折射率显著增大,甚至超过覆层折射率,而传播损耗不断减小。对于三层介质结构,相邻两介质分界面间添加单层石墨烯形成了平板波导结构,研究该结构发现,当传导层和基底层介电常数相近时,其夹层的石墨烯对波导TE模的调控尤其显著,这种调控来源于电磁波耦合到石墨烯形成的表面等离子体波TE模。这些结果为设计调制器、检测器和过滤器等石墨烯表面等离子体波导器件提供了理论支持。     

含左手材料对称三层平板空气波导的模式特性

研究了左手材料作为衬底及覆盖层的对称三层平板空气波导的传输特性.快波和慢波都可以在这种波导中传播.快波不存在基模模式,只有0阶和1阶的TE或TM模才会出现慢波.当左手材料的相对介电常量和相对磁导率相等时,TE、TM模式完全简并,当其相异时简并消除.可以存在同阶模式的双传播模.     

含单负材料的不对称平板波导的传导模

利用图解法系统地研究了由不同类型的单负材料作为包层的三层平板波导的模式特征.研究表明单负介质波导具有一系列奇异的特性,与传统介质波导或左手介质波导相比,此波导的芯区横向振荡导模的模折射率范围较大.除0阶导模外,其它TE,TM导模均为芯区横向振荡模,且同阶的TE、TM模的色散曲线几乎重合,只有0阶的TE,TM模才可以支持表面波的传播.单负介质的结构参数对0阶导模的影响较大.一定条件下,波导中可以出现0阶导模的完伞缺失或仅支持表面波的传输,还会出现超慢波现象,甚至可以共生都是后向波的0阶双模.     

非对称金属包覆左手介质平板波导的微扰分析

基于微扰方法分析非对称金属包覆左手介质平板波导的特性,给出了该波导的复有效折射率的一级近似解,并对波导的传输特性和损耗特性进行了数值模拟.结果表明：非对称金属包覆左手介质平板波导没有零阶模式|TE1模传播系数随波导厚度的增加迅速减小,损耗系数随波导厚度的增加快速增加,达到最大值后又迅速减小|非对称金属包覆左手介质平板波导传输特性相对于左手介质三层平板波导传输特性发生了很大改变,TM1模,TM2和 TE2模式以及更高阶模式在截止厚度附近出现双值现象|特别在二阶及高阶模式中,TE模式相对于TM模式具有高传输低损耗的特性,而以右手介质为芯层的金属包覆波导不具有这一特性.     

通信波段金属包覆波导传播特性研究

采用等效折射率的方法,以金、银、铜作为金属材料,计算了入射波长为1550nm时,2种不同结构金属包覆波导的几何色散关系、场分布特征及损耗情况。采用金属为衬底的非对称包覆结构进行计算,结果表明TE模的特点与全介质波导的情况类似。采用双面金属对称包覆结构进行计算,计算表明TM0模由金属-介质界面处的表面模对称结合而成,其等效折射率不在导模的范围之中,TE模和TM1模等效折射率的范围大于全介质波导的情况,TM1模由金属-介质界面处的表面模反对称结合而成。     

各向异性左手材料劈形平面波导传输特性

从Maxwell方程组出发,得到三层各向异性左手材料对称平面波导TM模的色散方程及功率流方程;利用多台阶近似法得到该类劈形平面波导TM0振荡模的反射系数和传输系数方程;根据TM模的色散方程、反射系数和传输系数方程画出相应的特性曲线.分析表明:随着电磁波的传输,TM振荡模传输系数ct2逐渐减小,但在零附近出现振荡,同时出现双模反射特性;随着波导长度的增加,第一类反射系数ar12从零开始逐渐增加,最终趋于恒定;第二类反射系数ar22单调增加,最大可接近于1.增加多层结构左手材料中金属填充比或电磁波频率,传输特性曲线下移,传输能力下降;第一类反射特性曲线下移,反射能力下降,但第二类反射特性曲线上移,反射加强.     

集成光学、波导理论

TN252 2004064285 5层金属包覆介质波导的模式特性研究=Modal characteristics study of 5-layer metal-clad waveguide[刊,中]/纪磊(天津大学精密仪器与光电子工程学院.光电信息技术科学教育部重点实验室.天津(300072)),于建…∥光电子·激光.—2004,15(4).—432-438 采用有限元方法(FEM)对具有复折射率的金属包覆5层平板波导和矩形波导的折射率及模场分布进行了求解并进行了定性的分析,得到了5层平板波导的模折射率随芯层厚度、缓冲层厚度和金属层厚度的变化关系。给出了等离子体表面模的模场分布演变,揭示了在缓冲层变化时等离子体表面波向普通TM模式及低价TM模向高阶TM模的演变过程,计算了二维结构5层矩形波     

Polarization-Independent Guided-Mode Resonance Filters under Oblique Incidence

We present the dispersion relation of guided-mode resonances in planar periodic waveguides, both for s-polarized （TF, mode） and p-polarized （TM mode） incident waves. For a fixed homogeneous planar waveguide, dispersion curves of the TE eigenmode cannot cross that of the TM eigenmode at all. That is to say, at a certain wavelength, TE and TM modes cannot be excited with the same propagation constant. Due to Bragg reflection in the planar periodic waveguide, dispersion curves of the TE leaky mode may intersect with that of the TM leaky mode in the first Brillouin zone. We employ these intersections to achieve polarization-independent guided-mode resonance filters.     

Metal-clad graded-index planar optical waveguides: accurate perturbation analysis

We present a perturbation analysis of propagation constants and attenuation coefficients of TE and TM modes in a metal-clad linear index planar optical waveguide. The imaginary part N″ of the complex modal index N=N′ + iN″ is given by N″ = (∂N′ / ∂′), where =′ + i″ is the complex dielectric constant of the metal cladding and ∂N′ / ∂′ is obtained by numerical differentiation of the solution of the real eigenvalue equation. The cumbersome solution of a complex transcendental equation is thus completely eliminated. The results are in good agreement with those obtained by solving the eigenvalue equation in the complex plane. By taking the metal-clad linear planar waveguide as a preselected waveguide, we can use our RWKB method to solve metal-clad planar waveguides with parabolic, exponential, gaussian and complementary error function index profiles.     

Determination of dispersion diagram of symmetric modes for the cylindrical magnetoplasmonic waveguides

In this paper the characteristic equation for the magnetoplasmonic cylindrical waveguide will be formulated and solved. The effect of cylinder radius and the static magnetic field on the propagation constant are investigated. It is seen that, despite the isotropic cylindrical wave guide, there is not pure TE and TM mode for the symmetric modes and there are two propagation mode. Numerical experiments shows that, there is not unique solution for the propagation constants, and propagation constants may depends on cylinder radius and the bias field. Reversing the DC field direction, does not show any change propagation constant and therefore does not exist Faraday rotation for this structure.     

Plasmonic Metasurfaces Enabled Ultra‐Compact Broadband Waveguide TM‐Pass Polarizer

Silicon waveguide polarizers offer a simple yet robust approach to address the polarization‐dependent issue of silicon‐based optical components, and hence have found numerous applications in silicon photonics. However, the available silicon waveguide polarizers suffer from the issue of large device footprint, high insertion loss (IL), and/or fabrication complexities. Here, a silicon waveguide transverse magnetic (TM)‐pass polarizer is constructed by coating a silicon waveguide with an ultra‐thin plasmonic metasurface structure that is capable of guiding slow surface wave (SW) mode. The transverse electric (TE) waveguide mode can be converted into SW mode with the involvement of metasurfaces, and hence is intrinsically absorbed and forbidden to pass, while the TM waveguide mode can be well guided due to little influence. A typical metasurface polarizer with an ultra‐short length of 2.4 µm enables the IL of 28.16 dB for the TE mode, and that of 0.53 dB for the TM mode at 1550 nm. Multiple‐band TM‐pass polarizers can be obtained by cascading two or more different metasurface‐coated silicon waveguides along the propagation direction, and a dual‐band TM‐pass polarizer is demonstrated with the IL being of 19.21 and 29.09 dB for the TE mode at 1310 and 1550 nm, respectively.     

Optical surface modes of photonic crystals for dual-polarization waveguide

In this study, the design of a polarization-independent (dual-polarization) waveguide is presented by utilizing surface modes of photonic crystals. The waveguide structure operates in a frequency interval that is commonly shared by both transverse-electric (TE) and transverse-magnetic (TM) polarizations. The numerical calculations based on plane wave expansion and finite-difference time-domain methods are carried out to design and demonstrate a surface mode waveguide that provides confinement and guiding for both TE and TM modes. Once the relevant modes are properly excited, the high transmission efficiency of the photonic crystal surface waveguide is ensured. The demand to have polarization-insensitive devices makes our proposed design an important component for the photonic integrated circuit applications. Finally, we also propose a broadband surface mode photonic crystal waveguide with a bandwidth value of 28% for only TE polarization.     

Optical characteristic analysis and TE0 mode selection for asymmetric metal-clad waveguides

The optical characteristics of the asymmetric metal-clad waveguide are analysed, more accurate formulae are derived for calculating the propagation constants and loss coefficients of TE and TM modes. The computed results for Al/GaAs/AlGaAs waveguides are in good agreement with the numerical results, and are much more accurate than the results in some other papers. The method for selecting the TE₀ mode is presented and discussed.     

Superbending effect in two-dimensional graded photonic crystals

We study the superbending effect in a two-dimensional graded photonic crystal (GPC) for both TE and TM modes. We show that the lateral beam shift is extremely sensitive to the wavelength for the TM mode but not TE mode, indicating the potential in designing some special superbending devices, for example, TE/TM splitter and polarization-indifference waveguide at prescribed wavelengths.     

Beat excitation of terahertz radiation in a semiconductor slab in a magnetic field

Two infrared lasers of frequencies ω₁ and ω₂ propagating in the TM/TE mode along $\stackrel{?}{z}$ direction in a rippled density semiconductor waveguide are shown to resonantly excite terahertz radiation at the beat frequency when ripple wave number is suitably chosen to satisfy the phase matching. The wave vector of the density ripple is along the direction of laser propagation while a static magnetic field is applied transverse to it. The lasers exert a ponderomotive force on the electrons at the beat frequency. This force, in the presence of density ripple and transverse magnetic field, produces a nonlinear current at the terahertz frequency. The magnetic field enhances the amplitude of the terahertz wave. However terahertz yield is significantly higher in the TM mode laser beating than in the TE mode laser beating.