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1.
High resolution maximum entropy method (MEM) electron density maps have been elucidated for LiF and NaF using reported X-ray structure factors. The ionic nature of the bonding between constituent atoms in both the systems is found to be well pronounced and clearly seen from the electron density maps. The resolution of the present MEM maps is 0.063 Å per pixel for LiF and 0.072 Å per pixel for NaF along the three crystallographic axes. The electron density at the middle of the bond along [111] is found to be 0.0673 e/Å3 for LiF and 0.003 e/Å3 for NaF showing the different ionic strengths of the bonding. The electron density along [100] and [110] has also been drawn and analyzed. The inequality in the ionicity for the individual atoms and the electron content for different ionic radii have also been analyzed and compared with already published results. The wRMEM obtained from MEM analysis is 0.3% for LiF and 0.79% for NaF.  相似文献   

2.
We have studied electronic excitations at the surfaces of NiO (100), Cr2O3(111), and Al2O3(111) thin films with Electron Energy Loss Spectroscopy (EELS). On NiO (100) we observe surface electronic excitations in the energy range of the band gap which shift upon adsorption of NO. Ab initio cluster calculations show that these excitations occur within the Ni ions at the oxide surface. The (111) surface of Cr2O3 is characterized by distinct excitations which are also strongly influenced by the interaction with adsorbates. Temperature-dependent measurements show that two different states of the surface exist which are separated by an activation energy of about 10 meV. For Al2O3(111) we present data for a CO adsorbate. The oxide is quite inert with respect to CO adsorption as indicated by desorption temperatures between 38 K and 67 K. Due to the weak interaction with the substrate the a3II valence excitation of CO shows a clearly detectable vibrational splitting which has not been observed previously for a CO adsorbate in the (sub)monolayer coverage range. For several different adsorption state the lifetimes of the a3II state could be estimated from the halfwidths of the loss peaks, yielding values between 10–15 s for the most strongly bound species and 10–14 s for the CO multilayer.  相似文献   

3.
Ar+ sputtering of an Cu(111) surface while simultaneously supplying Mo atoms is known to induce an oriented growth of Mo thin crystals, or seed-layers, on evolving conical Cu protrusions. The seed-layers thus formed are shown to be dual-oriented, or bicrystalline, consisting of columnar crystallites grown homo-epitaxially. The orientation relationship between the two types of crystallites was (100)I (111)II with [001]I [110]II, and this bicrystallinity probably resulted from a non-uniform charge-up of the layers' growth front. As concluded from high-resolution electron microscopy, the Mo(100) stacking is elastically converted into the Mo(111) stacking and vice versa, under the influence of tensile stress. The homo-epitaxy that the seed-layers exhibited is believed to reflect the mutual convertibility of the Mo(100) and (111) stackings.  相似文献   

4.
The critical behavior, ferromagnetic order and magnetic anisotropies of ultrathin, epitaxial, magnetic films is studied using electron capture spectroscopy (ECS), which is capable of probing the long-ranged and short-ranged electron spin polarization (ESP) at the topmost surface layer of uncoated and coated magnetic structures. For all systems [Ni(100)/Cu(100), Ni(100)/NaCl(100), fcc Fe(111)/Cu(111), Fe(100)/Ag(100), Tb/Fe(100)/Ag(100), Fe(100)/Au(100), hcp Tb(0001)/W(110), Fe(110)/W(110), V(100)/Ag(100), Pd(100)/Ag(100), Pd/W(110)] investigated so far, ferromagnetic order is detected. It is found that the surface Curie temperatureT Cs depends on film thicknessd. ECS data obtained at the surface of various systems reveal the existence ofT- andd-dependent magnetic anisotropies. Although for V(100)/Ag(100) the measured critical exponent=0.128 agrees very well with=1/8 predicted for the two-dimensional Ising model, for other systems, such as Fe(100)/Au(100), the measured value (0.25) is in disagreement with theoretical predictions. The experimental results are discussed within the framework of presently available experimental and theoretical data.  相似文献   

5.
A plasma generated at the surface of a ferroelectric ceramic has been applied for exciting the thermoluminescence of the KCl, Gd3Ga5O12 (GGG), Al2O3, Al2O3Cr, and Y3Al5O12 (YAG) crystals. It has been found that this excitation technique is very useful in studying the trap centers.  相似文献   

6.
Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T m as well as a strong supercooling of the films is observed. The electric field gradient for 111In(111Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.  相似文献   

7.
In previous Perturbed-Angular-Correlation (PAC) studies of the - emission of 111In probe nuclei in cold-worked or particle-irradiated nickel, it has been found that thermal annealing in the temperature regime of recovery stage III leads to the formation of so-called C-defects (Cubic defects). This is indicated by the occurrence of a new frequency of about 80 Mrad/s, in addition to the frequency (200 Mrad/s) that is due to 111In on substitutional sites. Obviously, the C-defects are complexes consisting of 111In and the intrinsic point-defect species that migrates freely in recovery stage III. Therefore, they have played an important rôle in the long-standing controversy on whether the recovery-stage-III defects are vacancies (one-interstitial model) or self-interstitials (two-interstitial model). The present paper reports on a novel experimental effort to reveal the nature of the C-defects by combining PAC studies on nickel samples differently pretreated in a systematic way, investigations of the Extended X-ray Absorption Fine Structure (EXAFS) on In-doped nickel, and measurements of the decay rate of 111In nuclei in the Electron-Capture-Induced Decay (ECID). On the basis of the results of these experiments it is concluded that the defects trapped by substitutional 111In atoms (Ins) in recovery stage III are self-interstitials (I), as expected according to the two-interstitial model. Moreover, there is evidence that the C-defects are In interstitials on tetrahedral sites (Ini) that form exclusively in the vicinity of the specimen surface from Ins – I pairs via the reaction Ins+I Ini.  相似文献   

8.
The structure of C-form Ho2O3 and Er2O3 single crystals and powder samples was investigated by the electric quadrupole hyperfine interaction of111In(EC)111Cd probe ions using the perturbed - angular correlation method (PAC). The resulting set of refined atomic coordinates is compared to X-ray data and used to calculate the orientations of the electric field gradients (EFG) which are reproduced by the PAC measurements in single crystals. The temperature dependence of the coordinates was measured for both substances.  相似文献   

9.
Single crystals of MgO with (100), (110) and (111) orientations were implanted with 64 keV Fe ions at a dose of 1.9×1017 ions/cm2 by using metal-vapor vacuum arc ion source (MEVVA). The magnetic properties were investigated by a superconducting quantum interference device magnetometer and Rutherford backscattering spectrometry (RBS) was used to analyze the Fe concentration and distribution. The presence of Fe nanoparticles in MgO matrix was verified by magnetization measurements. Results show that all the samples behave with ferromagnetism at 5 K and 300 K, and the coercive field, HC, follow well the relation: at measured temperatures. The orientation dependence of the coercive field may result from the different distribution of Fe nanoparticle size.  相似文献   

10.
With the vibrating reed technique we have measured the critical current densityJ c of a Y 123 200 nm thin film as a function of magnetic field perpendicular to the CuO2 planes (O T<B8 T) and temperature (20KT60 K). At fieldsB<0.1 TJ c is magnetic field independent and decreases at higher fields. A comparison with theory indicates that a crossover from a single pinning to a small bundle collective pinning regime may explain the observed behaviour. According to our estimate the main pinning centers are weak point pins due to oxygen vacancies. From the temperature dependence ofJ c atB0 we obtain a temperature dependence of the thermodynamical critical fieldB c (1–T/T c )2 forT20 K which agrees with the anomalous temperature dependence ofB c2 observed recently in highly anisotropic high temperature superconductors.  相似文献   

11.
The magnetic hyperfine field was measured at 111In(111Cd) probe atoms in ultrathin Ni films epitaxially grown on Cu(100) utilizing the perturbed -angular correlation (PAC) method. The behaviour of the hyperfine field as a function of temperature was studied for different film thicknesses ranging from 2 up to 10 monolayers. It was found that the strength of the hyperfine fields as well as the critical temperatures are strongly reduced for thin nickel films and approach the bulk value with increasing film thickness. The orientation of the hyperfine field is discussed.  相似文献   

12.
The surface morphology after deposition of Ag on Ag(111) at low temperatures (130–200 K) has been studied in detail with SPA-LEED (Spot-Profile Analysis of Low-Energy Electron Diffraction). The surface roughness and the mean terrace size have been quantitatively determined under various conditions. At 130 K the surface roughness increases with coverage exactly according to the relation = 1/2, which indicates that the inter-layer diffusion can be neglected at 130 K. Although the mean terrace length decreases with increasing coverage (following an approximate power law of –2/3) for all studied coverages, it is much larger than expected for a pure random or Poisson-growth mode without any diffusion of the adatoms. Therefore, Ag grows on Ag(111) at this temperature without interlayer diffusion but with intra-layer diffusion. The intralayer diffusion barrierE d has been determined by measuring the temperature dependence of the two-dimensional island density according to the nucleation theory (supposing a critical nucleus size of one). The obtained valueE c=0.18 eV agrees with the theoretical calculations and previous measurements. Furthermore, from comparing measured and Monte-Carlo-simulated (MC) surface roughness at different deposition temperatures we obtain E=0.05 eV as a lower limit for the additional barrier at steps.  相似文献   

13.
63Ni radiotracer diffusion in a well-compacted nanocrystalline (grain size d 80 to 100 nm) -Fe–40wt%Ni alloy was measured by the serial sectioning technique in an extended temperature range from about 610 to 1010 K. Since the material microstructure reveals two different length scales with nano-size grains forming micrometer-size clusters (or agglomerates), three main diffusion paths determine the diffusion behavior: the nanocrystalline grain interior, the nanocrystalline grain boundaries (GB), and the inter-agglomerate interfaces. The systematics of diffusion in a compacted nanostructured material with such a bimodal distribution of interface characteristics was elaborated and the experimental data were analyzed in dependence on the diffusion regime. The absolute values and the Arrhenius parameters of Ni GB diffusion in the nano--Fe–40wt%Ni alloy (D 0 = 9.3 × 10–4 m2 s–1 and Q = 177 kJ/mol) are similar to the Ni GB diffusivity in coarse-grained poly-crystalline -Fe. Accordingly, the nanocrystalline GBs are concluded to have quasi-equilibrium structures, particularly because of a pronounced grain growth (from about 30 to about 100 nm) during the production stage of the nanomaterial. In contrast, the inter-agglomerate interfaces, which present the fastest diffusion path in the present investigation (D 0 = 1.9 × 10–3 m2 s–1 and Q = 134 kJ/mol), are likely to be in a non-equilibrium state due to specific features of the applied powder metallurgical process.  相似文献   

14.
Scanning force microscopy (SFM) was employed to characterize C60 island films in an ultra-high vacuum (UHV). The initial growth stage of C60 on NaCl cleavage faces and nanotribological properties of this solid lubricant are investigated. In comparison to the NaCl(001) face, higher friction is measured on the C60 islands, resulting in a ratio of friction of 13 for NaClC60. The friction coefficient of the (111) oriented C60 island is determined to be 0.15±0.05. High-resolution SFM images reveal the hexagonal lattice of the unreconstructed (111) top surfaces and the overgrowth relationships of the C60 islands.  相似文献   

15.
The manufacture of microelectronic devices based on silicon technology is largely dominated by wet chemical processes. By ultraclean sample preparation in air and a fast transfer into UltraHigh Vacuum (UHV) we open up a way for the atomic-scale structural and chemical characterization of silicon surfaces immediately after wet-chemical processing. Using Scanning Tunneling Microscopy (STM), ThermoDesorption (TDS) and InfraRed Spectroscopy (IRS), we find that a surface termination predominantly by hydrogen results from all the different wet-chemical treatments investigated (etching with hydrofluoric acid, rinsing with hot water, chemomechanical polishing)-despite the different chemical ambients and process parameters involved. Microscopically, a crystallographically preferential attack of the silicon is observed in all these processes which results, to a different extent, in anisotropic defect structures on the surfaces. This is explained by an interplay of aqueous reaction kinetics and sterical hindrance on the silicon surface. It is pointed out how a UHV surface analysis of the micromorphology of wet-chemically treated silicon surfaces, so far carried out mostly on Si(111) due to its easier preparation and experimental accessability, may help to provide the in-depth understanding of the atomic-scale mechanisms during wet-chemical processing demanded by the progressing miniaturization of microelectronic devices. The atomically smoother and chemically more homogeneous Si(111) obtained after preferential etching with NH4F suggests that in future applications Si(111) may gain importance over Si(100), which still dominates in today's semiconductor technology, since future devices increasingly rely on tailor-made and ideal properties on an atomic scale. Due to their structural and chemical simplicity and well-controlable characteristics, H-teminated surfaces after wet-chemical preparation also form ideal substrates for conventional UHV surface studies such as absorption and MBE-growth experiments.  相似文献   

16.
We have grown InN films on MgAl2O4(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe2O4(111) substrates. It has been revealed that InN(0001) films grow on MgAl2O4(111) with an in‐plane epitaxial relationship of InN[1 00] // MgAl2O4[1 0], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30° rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl2O4 and those on (Mn,Zn)Fe2O4 led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

17.
Angle-resolved bremsstrahlung isochromat spectra of the Ag(100), Ag(110) and Ag(111) surfaces have been measured. Our work extends and complements several earlier investigations of other authors. The data are summarized in the form of final state dispersionsE(k ). Comparison is made to the available theoretical and experimental information. The results for the bulk as well as for the surface-specific features are in excellent to reasonable agreement among each others and with recent calculations.  相似文献   

18.
Pulsed laser deposition of epitaxial, single-crystal Nd:Gd3Ga5O12 (Nd:GGG) films on Y3Al5O12 substrates with thicknesses up to 135 m and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping. PACS 42.70.Hj; 42.55.-f; 42.82.Et; 42.79.Gn; 81.15.Fg  相似文献   

19.
The technique of perturbed angular correlations of gamma rays (PAC) is applied for the first time to study the structure of small metal clusters. Metal clusters containing111In probe atoms with 50 nm radii were synthesized by dissolving InCl3 containing111In in hexane using a surfactant, thereby creating an inverse micellar solution. The salt was then reduced to metal form by addition of NaBH4. 100% conversion efficiency of In salt to metal clusters was achieved. PAC measurements at 293 K on the111Cd daughter nuclide exhibited a nuclear quadrupole interaction with coupling frequency 0=16.0(5) Mrad/s and a small asymmetry parameter, =0.20(4). The frequency is as observed for bulk In crystals, but a non-zero value of has not been previously reported. Lack of inhomogeneous signal broadening and the faceted shape of some nanoclusters suggest high crystal perfection.  相似文献   

20.
Magnetic hyperfine fields (mhf) at 111Cd and 140Ce nuclei, dilutely substituting the In and Ce sites, respectively, have been measured in the intermetallic compound CeIn3 using perturbed angular correlation technique. A pure electric quadrupole interaction with an axially symmetric electric field gradient was observed at 111In(EC)111Cd probe nuclei at room temperature while a combined magnetic dipole and electric quadrupole interaction is observed below 10K. Below the ordering temperature, only a magnetic interaction is observed at 140La()140Ce probe. The values of mhf measured experimentally as a function of temperature are discussed in terms of critical behavior.  相似文献   

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