Development of a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA), and its application to Auger photoelectron coincidence spectroscopy (APECS)

We have developed a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA) with an outer diameter of 26 mm. The DPCMA consists of a shield for the electric field, inner and outer cylinders, two pinholes with a diameter of 2.0 mm, and an electron multiplier. By assembling the DPCMA in a coaxially symmetric mirror electron energy analyzer (ASMA) coaxially and confocally we developed an analyzer for Auger photoelectron coincidence spectroscopy (APECS). The performance was estimated by measuring the Si-LVV-Auger Si-1s-photoelectron coincidence spectra of clean Si(1 1 1). The electron-energy resolution of the DPCMA was estimated to be E/ΔE = 20. This value is better than that of the miniature single-pass CMA (E/ΔE = 12) that was used in the previous APECS analyzer.     

Disorder broadening of alloy Auger spectra

Auger spectroscopy promises the means to separate initial and final state contributions to the disorder broadening of core XPS spectra in disordered alloys. Auger disorder broadening, deduced from recent ab initio results, is predicted to be greater than XPS disorder broadening for Cu₅₀Pd₅₀ and Ag₅₀Pd₅₀ alloys. Simulations are used to assess whether this effect is observable experimentally despite the greater lifetime broadening of Auger spectra. A number of cases where narrow core–core–core Auger transitions should allow clear experimental identification of this effect are identified. The prospects for determining environment-resolved Auger spectra using APECS have been investigated.     

Bone calcium, phosphorus detection by Auger electron spectroscopy

Auger electron spectroscopy was used to detect calcium and phosphorus of cortical bone from rat femoral neck and rear tibia. Spectra were taken from bone pieces as well as from disks prepared from grinded bone material. Experimental conditions were found whereby the samples could be analyzed without conductive coatings. The results of this preliminary investigation demonstrate that Auger electron spectroscopy can be used to study bone mineral elements.     

Study of ion desorption induced by a resonant core-level excitation of condensed H2O using Auger electron photo-ion coincidence (AEPICO) spectroscopy combined with synchrotron radiation

Ion desorption induced by a resonant excitation of O 1s of condensed amorphous H₂O has been studied by total ion and total electron yield spectroscopy, nonderivative Auger electron spectroscopy (AES) and Auger electron photo-ion coincidence (AEPICO) spectroscopy. The spectrum of total ion yield divided by total electron yield exhibits a characteristic threshold peak at hν = 533.4 eV, which is assigned to the 4a₁ ← O 1s resonant transition. The AES at the 4a₁ ← O 1s resonance is interpreted as being composed of the spectator-AES of the surface H₂O, and the normal-AES of the bulk H₂O, where the 4a₁ electron is delocalized before Auger transitions. H⁺ is found to be the only ion species in AEPICO spectra measured at the 4a₁ ← O 1s resonance and at the O 1s ionization (hν = 560 eV). The electron kinetic energy dependence of the AEPICO yield (AEPICO yield spectrum) at the 4a₁ ← O 1s resonance is found to be greatly different from that at the O 1s ionization. The peak positions of the AEPICO yield spectrum at the 4a₁ ← O 1s resonance are found to correspond to those of the spectator-AES of the surface H₂O, which is extracted from the AES at the 4a₁ ← O 1s resonance. Furthermore, the AEPICO yield is greatly enhanced at the 4a₁ ← O 1s resonance as compared with that at the O 1s ionization. On the basis of these results, a spectator-Auger-stimulated ion desorption mechanism and/or ultra-fast ion desorption mechanism are concluded to be responsible for the H⁺ desorption at the 4a₁ ← O 1s resonance. The enhancement of the H⁺ yield is ascribed to the O---H anti-bonding character of the 4a₁ orbital.     

Early stage in low energy ion-induced damage on InP(110) surface

The change in the short-range order created by ion milling in the near surface region of InP single crystals was investigated by primary beam diffraction modulated electron emission (PDMEE). The very early stage of the damage creation by low energy (0.6–1 keV) Ar ions in normal and oblique incidence was studied. A simple model based on the weighted combination of perfectly crystalline and completely amorphous regions was used to model the experimental results. Evidence of a subsurface nucleation of the amorphization process was found. We also found that the total sputtering yield is markedly dependent on the ion dose, being on the undamaged surface much larger than its steady state value. Low energy electron diffraction (LEED) measurements were also performed to correlate long-range and short-range order removal by ion bombardment. Finally, the ion damage on the GaAs and InP surfaces was comparatively discussed.     

High-temperature Auger electron spectroscopy of Zircaloy-4

The near-surface region of Zircaloy-4 (Zry-4) has been probed using Auger electron spectroscopy (AES). In particular, the behavior of impurity (sulfur) and alloying (tin) elements has been monitored as a function of annealing temperature and time. High-temperature AES experiments above 900 K are reported, with a primary focus on changes in the S(LMM) Auger feature that overlaps with the primary Zr(MNV) transition. We find that the sulfur content of the near-surface region increases linearly with annealing time at higher temperatures. Tin is the only alloying element whose Auger signal intensity significantly exceeds the noise level at these temperatures.     

超高真空俄歇电子能谱原位加热和GaN热效应研究

建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究．随着温度的增加,Ga LMM和Ga MVV的动能减小．利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移．     

Insulating properties of ultrathin KF layers on Cu(1 0 0): Resonant Auger spectroscopy

Solid-state effects in the creation and decay of K 2p core excitations in thin KF films on Cu(1 0 0) surface have been studied in resonant Auger spectra, excited using synchrotron radiation. The spectra of films of various thickness starting from a single monolayer were measured.The photoabsorption spectra reveal crystal field splitting already at film thickness of about 1 monolayer. The Auger decay spectra of the K 2p⁻¹3d core excitations in films of thickness up to 2 monolayers exhibit a band characteristic of the decay of core ionised states, showing that the excited electron delocalises into substrate before the core hole decays. In thicker films the coexistence of the decay of excited states in the bulk of the KF crystalline film and of ionised states at the KF-metal interface is observed, indicating that the charge transfer probability from the upper layers of the film into the metallic substrate is strongly reduced.     

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni₂Si, NiSi and NiSi₂ phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi₂ phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.     

Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

KLL Auger resonant Raman transition in metallic Cu and Ni

High energy resolution KL₂₃L₂₃ Auger spectra of polycrystalline Cu and Ni were measured using photon energies up to about 50 eV above the K-absorption edge and down to 5 eV (Cu KLL) and 4 eV (Ni KLL) below threshold. The spectra show strong satellite structures varying considerably as a function of the photon energy. In the sub-threshold region the linear dispersion of the diagram line energy positions and a distortion of the line shape as a function of photon energy, attributable to the Auger resonant Raman process, is clearly observed, indicating the one-step nature of the Auger emission. These changes in the resonant spectra are interpreted using a simple model based on resonant scattering theory in combination with partial density of states obtained from cluster molecular orbital (DV-Xα) calculations.     

Surface segregation of aluminum atoms on Cu-9 at.% Al(1 1 1) studied by Auger electron spectroscopy and low energy electron diffraction

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were applied to investigate the segregation of aluminum atoms on a Cu-9 at.% Al(1 1 1) surface. We observed that the Al concentration in the top layer ranged between about 9 and 36 at.% after the sample we used was annealed at different temperatures. The phenomenon of Al atoms segregating on the surfaces was explained well by considering the diffusion length of Al atoms in bulk Cu. LEED measurements showed that R30° structures grew as the concentration of Al atoms increased. The segregation phenomena on surfaces resulted in a stable two-dimensional Cu₆₇Al₃₃ alloy phase in the top layer.     

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 films

The influence of 200 MeV Au ion irradiation on the surface properties of polycrystalline fullerene films has been investigated. The X-ray photoelectron and X-ray Auger electron spectroscopies are employed to study the ion-induced modification of the fullerene, near the surface region. The shift of C 1s core level and decrease in intensity of shake-up satellite were used to investigate the structural changes (like sp² to sp³ conversion) and reduction of π electrons, respectively, under heavy ion irradiation. Further, X-ray Auger electron spectroscopy was employed to investigate hybridization conversion qualitatively as a function of ion fluence.     

Oxidation and thermal reduction of the Cu(1 0 0) surface as studied using positron annihilation induced Auger electron spectroscopy (PAES)

Changes in the surface of an oxidized Cu(1 0 0) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the annihilation induced Cu M_2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The intensity then decreases monotonically as the annealing temperature is increased to ∼600 °C. Experimental probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons are estimated from the measured intensities of the positron annihilation induced Cu M_2,3VV and O KLL Auger transitions. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption on localization of positron surface state wave function and annihilation characteristics are also analyzed. Possible explanation is proposed for the observed behavior of the intensity of positron annihilation induced Cu M_2,3VV and O KLL Auger peaks and probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons with changes of the annealing temperature.     

Quantitative Auger electron spectroscopy analysis of binary alloys with separate matrix correction factors for bulk and surface

A new method which takes into account the separate matrix correction factors for bulk and surface has been tried out for quantitative Auger electron spectroscopy analysis of binary alloys. The calculations use an iteration scheme. It has been applied to the Fe-Cr alloys studied at this Centre and the Auger electron spectroscopy data for the other alloy systems available in literature. The results are now more compatible with the expectation that the surface composition is different from the bulk.     

核衰变产生的X射线和俄歇电子数据计算

核衰变过程中,内转换电子发射和电子俘获能在原子电子壳层内留下空穴.其他原子电子壳层的电子将填补这些空穴,其原子电子位置将重排,并发射X射线和俄歇电子.X射线和俄歇电子的能量由原子电子结合能计算得到,X射线和俄歇电子的强度分别由内转换电子发射和电子俘获在原子电子壳层内留下的空穴数,X射线荧光产额,和空穴转移系数计算得到.本文简要介绍核衰变产生的X射线和俄歇电子数据的计算方法、计算程序与工作流程,并以核衰变为例说明其具体应用和简要讨论与总结.     

Preparation of the subnanometer thick epitaxial Al2O3(0001) layers on Fe(110) for magnetic tunnel junctions

Growth as well as crystallographic and electronic properties of thin AlO_x layers on Fe(110) were studied by means of low-energy electron diffraction and Auger-electron spectroscopy. Al layers of different thickness were deposited on Fe(110) and successfully oxidized to AlO_x. The step-by-step oxidation of thin Al layers at room temperature leads to the formation of amorphous AlO_x on top of the Fe(110) surface. A subsequent annealing at 250 °C of the oxidized 7-Å thick Al layer results in the formation of a well-ordered Al₂O₃(0001) layer on the Fe(110) surface.     

The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

The effects of adsorbed atomic hydrogen on the stability of silicon films grown on a Ge(100) substrate were studied by using positron-annihilation-induced Auger electron spectroscopy (PAES) and electron-induced Auger electron spectroscopy (EAES). PAES is almost exclusively sensitive to the topmost atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity was exploited in the study of film stability and interfacial mixing during the growth of silicon on Ge(100). The PAES results show that the prior adsorption of hydrogen prevented the segregation of germanium on top of the deposited silicon, and that the hydrogen adsorption was useful in growing a thermally stable structure.     

C+离子内壳激发共振态1s2s(3S)2p3的Auger能量和Auger分支率

利用精确的鞍点变分波函数和鞍点复数转动方法,计算了C+离子五电子原子系统内壳激发共振态1s2s(3S)2p3 2,4Po, 2,4Do 的俄歇能量和俄歇分支率,考察了俄歇跃迁的收敛性,对300-keV C+离子和CH4气体碰撞实验产生的高分辨率俄歇电子谱进行了标定,并指出这些类硼C+离子的内壳激发共振态对253-273eV范围的实验谱线有重要贡献. 本文计算结果与实验数据符合得很好.     

C~+离子内壳激发共振态1s2s(~3S)2p~3的Auger能量和Auger分支率(英文)

利用精确的鞍点变分波函数和鞍点复数转动方法,计算了C⁺离子五电子原子系统内壳激发共振态1s2s（³S）2p^32,4P°,^2,4D°的俄歇能量和俄歇分支率,考察了俄歇跃迁的收敛性,对300 keV C⁺离子和CH₄气体碰撞实验产生的高分辨率俄歇电子谱进行了标定,并指出这些类硼C⁺离子的内壳激发共振态对253～273 eV范围的实验谱线有重要贡献.本文计算结果与实验数据符合得很好.