共聚改性g-C3N4-N可见光催化降解RhB的研究

染料废水的排放对人类健康和生态系统构成严重威胁,光催化技术因其操作简单、绿色环保等优点在解决环境污染问题上已显示出巨大的潜力。类石墨相氮化碳（g-C₃N₄）由于成本低且具有良好的化学稳定性,被认为是光催化领域最有前景的新型光催化剂之一,但由于单一g-C₃N₄的比表面积小、可见光吸收能力低、光生电子-空穴复合率高影响了其光催化性能。以邻氨基苯甲腈和尿素为原料,通过高温共聚改性制备高催化活性的g-C₃N₄-N光催化剂,研究g-C₃N₄-N在不同pH值、g-C₃N₄-N投加量和RhB溶液浓度条件下对RhB光催化降解的影响,并结合红外光谱、XRD、BET、UV-Vis对g-C₃N₄-N光催化降解RhB的机理和染料降解路径进行解析。结果表明,经共聚改性制备的碳化氮为类石墨型纯相g-C₃N₄-N,具有稳定的光催化活性、大的比表面积和多孔结构,在初始pH值为3时,加入50 mg的g-C₃N₄-N在可见光条件下光催化降解10 mg·L-1 的RhB可达到最好的光催化降解效果,RhB在暗反应30 min内的吸附去除率可达30%左右,120 min的去除率达到97.7%。在光催化作用下,g-C₃N₄-N将吸附在光催化剂表面的罗丹明B分子通过快速N-脱乙基过程形成DER、EER和AR等大分子中间体,它们在空穴与·OH和·O-₂作用下,共轭结构裂解、开环,生成丁二酸、间苯二酚、丙酸等小分子,脱除的乙基被逐步氧化为乙二醇,这些小分子可以被转化为CO₂和H₂O。     

Linear and nonlinear optical response of g-C_3N_4-based quantum dots

Graphite carbon nitride(g-C_3N_4) attracts wide-ranging research interest due to its extraordinary physicochemical properties and promising applications ranging from heterogeneous catalysis to fuel cells. In this work, we design different g-C_3N_4-based quantum dots(g CNQDs), carry out a systematic study of optical properties, and elucidate the shape selectivity, composite nanostructure, and outfield effect. In particular, composites of g CNQDs and metal nanochains present excellent optical response, making it applicable to bioimaging, nano-plasma devices, and metalloenzyme in infrared light related fields. Besides, QDs which original bridging nitrogen atoms are replaced by amino(–NH_2), hydroxyl(–OH),and methyl(–CH_3) functional groups respectively, have excellent spectral selectivity in the deep ultraviolet region. More interestingly, in the study of the laser interaction with materials, the g CNQDs exhibit extremely high stability and light corrosion resistance. Phase transition from insulation to metal is observed under the critical condition of about 5 e V intensity or 337 nm wavelength. All provided theoretical support for designs and applications in g-C_3N_4 quantum devices.     

原位低场核磁共振弛豫法定量监测光催化Cr(Ⅵ)还原反应

本文利用原位低场核磁共振（LF-NMR）技术在真实固液反应环境中对光催化还原Cr（Ⅵ）反应进行了定量研究,并对Ag纳米颗粒负载量不同的Ag担载石墨相氮化碳复合光催化剂（Ag/g-C₃N₄）在可见光照射下催化Cr（Ⅵ）还原为Cr（Ⅲ）的性能进行了研究.研究发现,Ag纳米颗粒负载（负载量分别为1 wt.%、2 wt.%、5 wt.%和10 wt.%）可以有效提高g-C₃N₄的光催化性能;且负载量为5 wt.%时光催化性能最优,为无Ag负载的g-C₃N₄的4倍.此外,本文还通过横向弛豫时间（T₂）定量分析了反应体系中顺磁性Cr（Ⅲ）离子的浓度,证实了采用LF-NMR弛豫法评价光催化Cr（Ⅵ）还原反应性能的可行性.     

第一性原理研究O和S掺杂的石墨相氮化碳(g-C_3N_4)_6量子点电子结构和光吸收性质

利用密度泛函和含时密度泛函理论研究了氧(O)和硫(S)原子掺杂的石墨相氮化碳(g-C_3N_4)_6量子点的几何、电子结构和紫外-可见光吸收性质.结果表明:掺杂后(g-C_3N_4)_6量子点杂质原子周围的C-N键长发生了一定的改变,最高电子占据分子轨道-最低电子未占据分子轨道(HOMO-LUMO)能隙显著减小.形成能的计算表明O原子取代掺杂的(g-C_3N_4)_6量子点体系更稳定,且O原子更易取代N3位点,而S原子更易取代N8位点.模拟的紫外-可见电子吸收光谱表明,O和S原子的掺杂改善了(g-C_3N_4)_6量子点的光吸收,使其吸收范围覆盖了整个可见光区域,甚至扩展到了红外区.而且适当的杂质浓度使(g-C_3N_4)_6量子点光吸收在强度和范围上都得到明显改善.通过O和S掺杂的比较,发现二者在可见光区对(g-C_3N_4)_6量子点的光吸收有相似的影响,然而在长波长区域二者的影响有明显差异.总体而言,O掺杂要优于S掺杂对(g-C_3N_4)_6量子点光吸收的影响.     

Computational study on the half-metallicity in transition metal–oxide-incorporated 2D g-C3N4 nanosheets

In this study, based on the first-principles calculations, we systematically investigated the electronic and magnetic properties of the transition metal–oxide-incorporated 2D g-C₃N₄ nanosheet (labeled C₃N₄– TM–O, TM= Sc–Mn). The results suggest that the TM–O binds to g-C₃N₄ nanosheets strongly for all systems. We found that the 2D C₃N₄–TM–O framework is ferromagnetic for TM= Sc, Ti, V, Cr, while it is antiferromagnetic for TM= Mn. All the ferromagnetic systems exhibit the half-metallic property. Furthermore, Monte Carlo simulations based on the Heisenberg model suggest that the Curie temperatures (T_c) of the C₃N₄–TM–O (TM= Sc, Ti, V, Cr) framework are 169 K, 68 K, 203 K, and 190 K, respectively. Based on Bader charge analysis, we found that the origin of the half-metallicity at Fermi energy can be partially attributed to the transfer of electrons from TM atoms to the g-C₃N₄ nanosheet. In addition, we found that not only electrons but also holes can induce half-metallicity for 2D g-C₃N₄ nanosheets, which may help to understand the origin of half-metallicity for graphitic carbon nitride.     

基于石墨相氮化碳量子点直接荧光猝灭法检测碘离子的研究

石墨相氮化碳(g-C₃N₄)荧光纳米材料具有原料便宜、制备容易、荧光量子产率高、光学稳定性好、毒性低等优点,并且避免有机荧光染料复杂的合成步骤或者金属半导体量子点对环境潜在的危害,这些优点使得g-C₃N₄纳米材料成为新兴的荧光探针用于检测金属离子。最近,已有文献报道重金属汞离子能够高灵敏高选择性地猝灭g-C₃N₄量子点的荧光,加入碘离子能够提取被键合的汞离子形成碘化汞(HgI₂)进而恢复g-C₃N₄量子点的荧光,从而建立一种高灵敏检测碘离子的荧光传感器。然而,该方法依然需要重金属汞离子的参与,限制了该方法的推广应用。通过硝酸氧化块体g-C₃N₄并结合水热法处理制备了一种水溶性好、荧光强度高的g-C₃N₄量子点。该量子点的荧光发射波长位于368 nm,且其荧光发射波长不随激发波长的改变而改变,表明该量子点的尺寸比较均一。笔者发现碘离子在220 nm处有一个较强的吸收峰,与该量子点的激发光谱(中心波长245 nm)具有较大的重叠,从而产生内滤效应引起该量子点的荧光发生猝灭。利用这一性质,构建了一种选择性检测碘离子的新型荧光传感器。在最优检测条件下,g-C₃N₄量子点的荧光猝灭强度(ΔF)与碘离子浓度(X,μmol·L-1)在10～400 μmol·L-1之间具有良好的线性关系,线性方程为ΔF=0.325 79X+6.039 05(R2=0.999 5),检出限为5.0 μmol·L-1。通过“混合即检测”并且不需要借助与重金属离子的配位作用就能够检测碘离子,因此该方法具有快速、环保以及操作简便等优点。     

Alkali-metal(Li,Na, and K)-adsorbed MoSi2N4 monolayer: an investigation of its outstanding electronic,optical, and photocatalytic properties

Single-layer MoSi₂N₄,a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to investigate the electronic,optical,and photocatalytic properties of alkali-metal(Li,Na,and K)-adsorbed MoSi₂N₄ monolayer.The electronic structure analysis shows that pristine MoSi₂N₄ monolayer exhibits an indirect bandgap(E_g=1.89 eV).By contrast,the bandgaps of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.73 eV,1.61 eV,and 1.75 eV,respectively.Moreover,the work function of MoSi₂N₄ monolayer(4.80 eV)is significantly reduced after the adsorption of alkali metal atoms.The work functions of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.50 eV,1.43 eV,and 2.03 eV,respectively.Then,optical investigations indicate that alkali metal adsorption processes substantially increase the visible light absorption range and coefficient of MoSi₂N₄ monolayer.Furthermore,based on redox potential variations after alkali metals are adsorbed,Li-and Na-adsorbed MoSi₂N₄ monolayers are more suitable for the water splitting photocatalytic process,and the Li-adsorbed case shows the highest potential application for CO₂ reduction.In conclusion,alkali-metal-adsorbed MoSi₂N₄ monolayer exhibits promising applications as novel optoelectronic devices and photocatalytic materials due to its unique physical and chemical properties.     

Transition metal anchored on C9N4 as a single-atom catalyst for CO2 hydrogenation: A first-principles study

To alleviate the greenhouse effect and maintain the sustainable development, it is of great significance to find an efficient and low-cost catalyst to reduce carbon dioxide (CO₂) and generate formic acid (FA). In this work, based on the first-principles calculation, the catalytic performance of a single transition metal (TM) (TM = Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Cd, Ir, Pt, Au, or Hg) atom anchored on C₉N₄ monolayer (TM@C₉N₄) for the hydrogenation of CO₂ to FA is calculated. The results show that single TM atom doping in C₉N₄ can form a stable TM@C₉N₄ structure, and Cu@C₉N₄ and Co@C₉N₄ show better catalytic performance in the process of CO₂ hydrogenation to FA (the corresponding maximum energy barriers are 0.41 eV and 0.43 eV, respectively). The partial density of states (PDOS), projected crystal orbital Hamilton population (pCOHP), difference charge density analysis and Bader charge analysis demonstrate that the TM atom plays an important role in the reaction. The strong interaction between the 3d orbitals of the TM atom and the non-bonding orbitals (1π_g) of CO₂ allows the reaction to proceed under mild conditions. In general, our results show that Cu@C₉N₄ and Co@C₉N₄ are a promising single-atom catalyst and can be used as the non-precious metals electrocatalyst for CO₂ hydrogenation to formic acid.     

Solid-state NMR studies of the adsorption and photooxidation of ethanol on mixed TiO2--SnO2 photocatalysts

In situ solid-state NMR methodologies have been used to investigate the photocatalytic oxidation of ethanol (CH₃CH₂OH) over a series of SnO₂-based photocatalysts. The adsorption of ethanol on commercially available SnO₂ powder was studied using both cross-polarization ¹³C NMR and REDOR experiments, and showed the formation of two surface ethanol species, hydrogen-bonded ethanol at surface hydroxyl groups and ethanol chemisorbed to the SnO₂ surface (Sn–OCH₂CH₃). ¹³C NMR of the adsorbed ethanol was used to characterize the surface of monolayer SnO₂–TiO₂ coupled photocatalysts supported on porous Vycor glass. In situ solid-state NMR studies showed that the photooxidation of ethanol over the monolayer photocatalysts was slower than that over a supported TiO₂ monolayer photocatalyst due to the build-up of reaction intermediates such as acetic acid on the catalyst surface. ¹¹⁹Sn NMR experiments characterized the tin species on the porous Vycor glass support.     

First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet

Based on ab initio density functional theory calculations, we demonstrate that two carbon-doped boron nitride analog of α-graphyne structures, B_3C_2N_3 and BC_6 N monolayers, are two-dimensional direct wide band gap semiconductors, and there are two inequivalent valleys in the vicinities of the vertices of their hexagonal Brillouin zones. Besides, B_3C_2N_3 and BC_6 N monolayers exhibit relatively high carrier mobilities, and their direct band gap feature is robust against the biaxial strain. More importantly, the energetically most favorable B_3C_2N_3 and BC_6 N bilayers also have direct wide band gaps, and valley polarization could be achieved by optical helicity. Finally, we show that BC_6 N monolayer might have high efficiency in photo-splitting reactions of water, and a vertical van der Waals heterostructure with a type-II energy band alignment could be designed using B_3C_2N_3 and BC_6 N monolayers. All the above-mentioned characteristics make B_3C_2N_3 and BC_6 N monolayers, bilayers, and their heterostructures recommendable candidates for applications in valleytronic devices,metal-free photocatalysts, and photovoltaic cells.     

纳米CeO2-xNx固溶体的光谱特征对其催化性能影响研究

二氧化铈(CeO₂)具有储量丰富，价格低廉，催化性能优异等特性而得到广泛应用。通过在其晶格中掺杂其他离子制得CeO₂固溶体，可以进一步调控CeO₂的晶格大小，增加晶格缺陷浓度，从而有效提高催化性能。目前研究较多的掺杂离子多为金属阳离子，而对非金属阴离子掺杂的研究尚有待深入探索。本文以CO(NH₂)₂为N源，采用水热法合成不同N掺杂浓度的纳米CeO_2-xN_x固溶体(x=0.00，0.05，0.10，0.15，0.20)，系统对固溶体的微观结构及光谱特征进行表征。X射线衍射(XRD)结果表明，所有掺杂浓度的CeO_2-xN_x固溶体均呈萤石立方单相结构。与纯CeO₂相比，N含量为0.05时样品的晶胞参数显著增大，而随掺杂浓度的进一步增加，晶胞参数又呈现出逐渐减小的趋势。拉曼(Raman)测试表明，N掺杂样品的F_2g振动模式峰向高波数移动，其原因是由于当N3-取代部分O2-后，Ce4+周围出现Ce—N键，Ce—N键长因静电引力变强而缩短，从而引起峰位的移动。通过紫外可见吸收光谱(UV-Vis)分析掺杂所引起样品电子跃迁状态的改变，发现N元素的掺杂使CeO₂在可见光区域具有了吸光性能，CeO_2-xN_x固溶体的能隙明显减小，这是由于N(2p)与O(2p)的电子轨道发生交互作用而形成中间能级，使得电子跃迁所需能量降低，从而引起能隙的红移。荧光光谱(PL)测试表明，发射峰强度随N掺杂浓度的增大而增大，其原因一方面是由于N掺杂会引起晶格缺陷及氧空位比例的提升，发生带间跃迁的几率变大，进而提高发射峰的相对强度；另一方面，N的掺杂在价带O(2p)与导带Ce(4f)间形成中间能带，同样会导致发射峰变强。为表征纳米固溶体的催化特性，分别选取N掺杂量最小的CeO_1.95N_0.05与N掺杂量最高的CeO_1.80N_0.20以及纯CeO₂作为典型催化剂，采用球磨法制备Mg₂Ni/Ni/CeO_2-xN_x复合材料，系统分析了复合材料电极的储氢动力学性能。交流阻抗(EIS)测试发现，催化剂可以有效提高储氢合金的表面电荷转移活性，N掺杂量越高，CeO₂基固溶体的催化活性越强；动电位极化曲线测试表明，掺杂催化剂也能显著提高H原子在合金内部的扩散速率，且CeO_1.95N_0.05较CeO_1.80N_0.20具有更好的催化活性。催化机理主要从催化剂的微观结构及光谱特征进行分析，如前所述，随着N含量的提高，CeO₂固溶体晶格中的氧空位比例增大，晶格畸变程度提高，N的掺杂还使固溶体的电子跃迁能隙降低，从而有利于电子在合金表面的迁移；同时，纳米材料的晶粒尺寸越小，表明晶粒表面缺陷比例越大，说明催化剂的活性增强，因此表现为N掺杂浓度越高，复合材料电极交流阻抗弧半径的越小，即CeO_1.80N_0.20可以更加有效提高复合材料的表面活性；另一方面，若催化剂的晶胞体积增大，可使H原子在穿过材料表面的传输过程中具有更大的空间，由于CeO_1.95N_0.05的晶胞参数大于CeO_1.80N_0.20催化剂，故H原子通过催化剂进入合金内部的传输更加容易。H原子在合金内部的扩散速率与催化剂的晶胞参数或晶胞体积的大小密切相关。     

电荷俘获存储器的过擦现象

基于密度泛函理论的第一性原理平面波超软赝势方法和VASP软件对电荷俘获存储器过擦现象进行了分析研究.通过形成能的计算,确定了含有氮空位缺陷的Si3N4和含有间隙氧缺陷的Hf O2作为研究的对象;俘获能的计算结果表明两种体系对电子的俘获能力比对空穴的大,因而对两体系擦写载流子确定为电子.分别计算了Hf O2和Si3N4擦写前后的能量、擦写前后电荷分布变化、吸附能和态密度,以说明过擦的微观机理.对能量和擦写电荷变化的研究,表明Si3N4相比于Hf O2,其可靠性较差,且Si3N4作为俘获层,在一个擦写周期后,晶胞中电子出现减少现象;界面吸附能的研究表明,Si3N4相比于Hf O2在缺陷处更容易与氧进行电子交换;最后,通过对态密度的分析表明Si3N4和Hf O2在对应的缺陷中均有缺陷能级俘获电子,前者为浅能级俘获,后者为深能级俘获.综上分析表明,Si3N4在氮空位的作用下,缺陷附近原子对电子的局域作用变弱,使得Si3N4作为俘获层时,材料本身的电子被擦出,使得擦操作时的平带偏移电压增大,导致存储器发生过擦.本文的研究结果揭示了过擦的本质,对提高电荷俘获存储器的可靠性以及存储特性有着重要的指导意义.     

First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb₂Se₃ crystal. When one and two N atoms are introduced into the Sb₂Se₃ lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb₂Se₃ from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants ε1(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb₂Se₃is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.     

C_9N_4 as excellent dual electrocatalyst: A first principles study

We perform first principles calculations to investigate the catalytic behavior of C_9 N_4 nanosheet for water splitting.For the pristine C_9 N_4,we find that,at different hydrogen coverages,two H atoms adsorbed on the 12-membered ring and one H atom adsorbed on the 9-membered ring show excellent performance of hydrogen evolution reaction(HER).Tensile strain could improve the catalytic ability of C_9 N_4 and strain can be practically introduced by building C_9 N_4/BiN,and C_9 N_4/GaAs heterojunctions.We demonstrate that the HER performance of heterojunctions is indeed improved compared with that of C_9 N_4 nanosheet.Anchoring transition metal atoms on C_9 N_4 is another strategy to apply strain.It shows that Rh@C_9 N_4 exhibits superior HER property with very low Gibbs free energy change of-30 meV.Under tensile strain within ～2%,Rh@C_9 N_4 could catalyze HER readily.Moreover,the catalyst Rh_9 C_9 N_4 works well for oxygen evolution reaction(OER)with an overpotential of 0.58 V.Our results suggest that Rh@C_9 N_4 is favorable for both HER and OER because of its metallic conductivity,close-zero Gibbs free energy change,and low oneset overpotential.The outstanding performance of C_9 N_4 nanosheet could be attributed to the tunable porous structure and electronic structure compatibility.     

Hf-N体系的晶体结构预测和性质的第一性原理研究

为了寻找具有优异力学性能的新型超高温陶瓷材料, 结合进化算法和第一性原理, 系统研究了Hf-N二元体系所有稳定存在的化合物及其晶体结构. 除了实验已知的岩盐结构的HfN之外, 本文还找到了Hf₆N(R-3), Hf₃N(P6₃22), Hf₃N₂(R-3m), Hf₅N₆(C2/m)和Hf₃N₄(C2/m)五种新结构, 基于准简谐近似原理计算了这些稳定结构的声子谱以验证其动力学稳定性, 常温甚至更高温度下的吉布斯自由能以验证其高温热力学稳定性. 结果表明, 这些结构是动力学稳定的, 且在1500 K以下都是热力学稳定的. 同时, 本文还列出了在搜索过程中出现的空间对称性较高、能量较低的亚稳态结构, 包括Hf₂N(P4₂/mnm), Hf₄N₃(C2/m), Hf₆N₅(C2/m), Hf₄N₅(I4/m), Hf₃N₄(I-43d)和Hf₃N₄(Pnma). 之后计算了上述所有结构的力学性质(弹性常数、体模量、 剪切模量、 杨氏模量、硬度), 随着N 所占比例的增加, 硬度呈现的整体趋势是先增大后下降, 在Hf₅N₆处取得最大值, 为21 GPa. 其中Hf₃N₂和Hf₄N₅也展现出了较高的硬度, 都为19 GPa. 最后, 计算了这些结构的电子态密度和晶体轨道汉密尔顿分布, 从电子结构的角度分析了力学性能的成因. 研究结果显示, 较强的Hf-N共价键和较低的结构空位率是Hf₅N₆具有优异力学性能的主要原因.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

第一性原理方法研究N-Pr共掺杂ZnO的电子结构和光学性质

作为一种稳定性好、抗辐射能力强、原材料丰富的宽禁带半导体, ZnO在光催化的研究领域中成为热点材料,但是其仅能吸收可见光中的紫光,因此如何扩大ZnO对可见光的响应范围是一个值得研究的问题.掺杂改性是解决这个问题的常用方法.基于以上考量,本文应用第一性原理计算方法研究了N与Pr掺杂对ZnO的电子结构和光学性质的影响.研究结果表明:共掺体系比单掺体系更容易形成,且共掺体系的稳定性随Pr浓度的增加先增强后变弱;同一体系的最短Zn—O键与最长Zn—O键的布居数比例随杂质浓度的增大先增大后减小,说明杂质的掺入对体系的晶格畸变有很大的影响,有利于光生空穴-电子对的分离,从而提高材料的光催化活性. N 2p态与Pr 4f态发生杂化对晶体的完整性产生了破坏,在杂质原子周围形成晶场,造成能级劈裂,带隙减小;介电函数虚部的主峰位均向低能区域移动,吸收光谱中各掺杂体系发生红移,各共掺体系随着杂质原子Pr浓度的增加,在可见光区的响应范围依次扩大,吸收能力也依次增加,说明N与Pr的共掺杂对提高ZnO的光催化性是有利的.     

Mechanical,elastic, anisotropy,and electronic properties of monoclinic phase of m-Si_xGe_(3-x)N_4

The structural,mechanical,elastic anisotropic,and electronic properties of the monoclinic phase of m-Si_3N_4,mSi_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4are systematically investigated in this work.The calculated results of lattice parameters,elastic constants and elastic moduli of m-Si_3N_4and m-Ge_3N_4are in good agreement with previous theoretical results.Using the Voigt–Reuss–Hill method,elastic properties such as bulk modulus B and shear modulus G are investigated.The calculated ratio of B/G and Poisson’s ratio v show that only m-SiGe_2N_4should belong to a ductile material in nature.In addition,m-SiGe_2N_4possesses the largest anisotropic shear modulus,Young’s modulus,Poisson’s ratio,and percentage of elastic anisotropies for bulk modulus ABand shear modulus AG,and universal anisotropic index AUamong m-Si_xGe_(3-x)N_4(x=0,1,2,3.)The results of electronic band gap reveal that m-Si_3N_4,m-Si_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4 are all direct and wide band gap semiconducting materials.     

Estimation of the exchange constants in the Fe sublattice of the Y2Fe17 and Y2Fe17N3−δ compounds from the analysis of Mössbauer measurements

From the analysis of Mössbauer data for Y₂Fe₁₇ and Y₂Fe₁₇N_3−δ at various temperatures the hyperfine fields for 4f, 6g, 12j, 12k iron sites were estimated as a function of temperature. The reduced magnetizations calculated from the values of the hyperfine fields are fitted with a mean field model for four interacting sublattices using a computer program. The estimated exchange interaction from the fitting procedure between the 4f sites is found strongly negative (antiferromagnetic) in Y₂Fe₁₇ whereas in Y₂Fe₁₇N_3−δ it increases and becomes weak negative following a modified Slater-Néel curve. The rest of the exchange interactions are found positive or weak negative depending on the distances between the Fe atoms.     

Growth and magnetism of Ni nanoparticles in Ni/Al2O3/Si or Si3N4 multilayers

We report on the fabrication of Ni/Al₂O₃/Si and textured Ni/Al₂O₃/Si₃N₄ multilayers containing Ni nanoparticles that exhibit significantly improved results. The secondary phases arising from thermal reaction between Ni and Si can be remarkably suppressed with increasing layers of Al₂O₃ and deposition of Ni/Al₂O₃ multilayers on Si₃N₄ substrates. Atomic force microscopy shows the formation of large as well as nanoclusters of Ni when grown on Si, whereas textured Ni nanoparticles are formed on Si₃N₄ substrates. The magnetization measurements on Ni/Al₂O₃/Si containing a single buffer layer of Al₂O₃ shows higher coercivity field with magnetic nanowire-like behavior, whereas with several Al₂O₃ alternate layers almost a superparamagnetic-like behavior is observed. However, significantly improved magnetic hysteresis was observed in textured Ni/Al₂O₃/Si₃N₄ multilayers due to preferred alignment of Ni nanocrystallites.