Ab-initio calculations of bandgap tuning of In1-xGaxY (Y = N,P) alloys for optoelectronic applications

The Ⅲ-V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades. In the present article, the bandgap tuning and its influence on optical properties of In_1-xGa_xN/P, where (x = 0.0, 0.25, 0.50, 0.75, and 1.0) alloys are comprehensively analyzed by density functional theory based on full-potential linearized augmented plane wave method (FP-LAPW) and modified Becke and Johnson potentials (TB-mBJ). The direct bandgaps turn from 0.7 eV to 3.44 eV, and 1.41 eV to 2.32 eV for In_1-xGa_xN/P alloys, which increases their potentials for optoelectronic devices. The optical properties are discussed such as dielectric constants, refraction, absorption, optical conductivity, and reflection. The light is polarized in the low energy region with minimum reflection. The absorption and optical conduction are maxima in the visible region, and they are shifted into the ultraviolet region by Ga doping. Moreover, static dielectric constant ε₁(0) is in line with the bandgap from Penn's model.     

The Optical Properties of (C59N)2

Using the extended Hubbard model and sum-over-state method, we have calculated the linear polarizability α and the third-order nonlinear polarizability γ for (C₅₉N)₂. We find that (C₅₉N)₂ has very big γ value (around esu), and its α and γ values are bigger than those of C₅₉N. In particular, when 1.2 eV≤3ω, (C₅₉N)₂ as much larger γ values than C₅₉N.     

Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application

We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS₂ contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS₂ contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future.     

HSH-carbon: A novel sp2−sp3 carbon allotrope with an ultrawide energy gap

An sp²-sp³ hybrid carbon allotrope named HSH-carbon is proposed by the first-principles calculations. The structure of HSH-carbon can be regarded as a template polymerization of [1.1.1]propellane molecules in a hexagonal lattice, as well as, an AA stacking of recently reported HSH-C₁₀ consisting of carbon trigonal bipyramids. Based on calculations, the stability of this structure is demonstrated in terms of the cohesive energy, phonon dispersion, Born−Huang stability criteria, and ab initio molecular dynamics. HSH-carbon is predicted to be a semiconductor with an indirect energy gap of 3.56 eV at the PBE level or 4.80 eV at the HSE06 level. It is larger than the gap of Si and close to the gap of c-diamond, which indicates HSH-carbon is potentially an ultrawide bandgap semiconductor. The effective masses of carriers in the VB and CB edge are comparable with wide bandgap semiconductors such as GaN and ZnO. The elastic behavior of HSH-carbon such as bulk modulus, Young’s modulus and shear modulus is comparable with that of T-carbon and much smaller than that of c-diamond, which suggests that HSH-carbon would be much easier to be processed than c-diamond in practice.     

Bandgap evolution of Mg3N2 under pressure: Experimental and theoretical studies

Wide bandgap semiconductors are crucially significant for optoelectronic and thermoelectric device applications. Metal nitride is a class of semiconductor material with great potential. Under high pressure, the bandgap of magnesium nitride was predicted to grow. Raman spectra, ultra-violet-visible (UV-Vis) absorption spectra, and first-principles calculations were employed in this study to analyze the bandgap evolution of Mg₃N₂. The widening of the bandgap has been first detected experimentally, with the gap increasing from 2.05 eV at 3 GPa to 2.88 eV at 47 GPa. According to the calculation results, the enhanced covalent component is responsible for the bandgap widening.     

Electronic and magnetic properties of Ti(2)O(3), Cr(2)O(3), and Fe(2)O(3) calculated by the screened exchange hybrid density functional

The electronic and magnetic properties of the transition metal sesqui-oxides Cr(2)O(3), Ti(2)O(3), and Fe(2)O(3) have been calculated using the screened exchange (sX) hybrid density functional. This functional is found to give a band structure, bandgap, and magnetic moment in better agreement with experiment than the local density approximation (LDA) or the LDA+U methods. Ti(2)O(3) is found to be a spin-paired insulator with a bandgap of 0.22?eV in the Ti d orbitals. Cr(2)O(3) in its anti-ferromagnetic phase is an intermediate charge transfer Mott-Hubbard insulator with an indirect bandgap of 3.31?eV. Fe(2)O(3), with anti-ferromagnetic order, is found to be a wide bandgap charge transfer semiconductor with a 2.41?eV gap. Interestingly sX outperforms the HSE functional for the bandgaps of these oxides.     

Optical Properties of High Pressure Phases in ZnTe 1− x Se x

We report on the optical properties of high pressure semiconducting phases in ZnTe 1 m x Se x . In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV. In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.     

A shape memory alloy-based tunable phononic crystal beam attached with concentrated masses

Shape memory alloys (SMAs) in phononic crystals (PCs) or metamaterials mostly serve as smart inserts or local resonators to generate tunable bandgaps for other structures. In this letter, we address the method for creating tunable bandgaps in structures made of SMA. Specifically, we consider concentrated masses, realized by steel balls, as attachments on a SMA. To provide a design guideline, we derived the closed-form bandgap formula of the proposed SMA PC beam. As the bandgap order increases, the coefficient of the nth Bragg bandgap width decreases. In addition, the practical final beam enlarges bandgap edges than ideally infinite PCs or metamaterials. Our experimental results on the PC beam with different sizes of the steel ball arrays agree with the analytical predictions of the bandgap behaviors. With the bandgaps formed by the steel balls and the shape memory effect, wide tunability of the bandgaps are achieved on the SMA beam.     

氧化镓薄膜的制备及其日盲紫外探测性能研究

采用射频磁控溅射方法在蓝宝石单晶衬底上沉积氧化镓(Ga2O3)薄膜,并通过光刻剥离工艺(Lift-off)制备了金属-半导体-金属结构的Ga2O3日盲紫外探测器。对不同温度下沉积的Ga2O3薄膜分析表明,在800℃下获得的薄膜结晶质量最好,薄膜的导电性则随着沉积温度的上升先增大后减小。在800℃制备的β-Ga2O3薄膜的可见光透光率大于90%,光学吸收边在255 nm附近。在10 V偏压下,探测器的暗电流约为1n A,光电流达800 n A,对紫外光响应迅速。器件的响应度达到0.3 A/W,260 nm波长处的响应度是290 nm波长对应响应度的40倍,可实现日盲紫外波段的探测。     

(C_5H_(11)N_2)~+和(C_7H_(12)N_2)~(2+)的NMR研究

结合1H NMR,13C NMR谱,分别对钨、钼配合物{WO2(C10H6O2)2(C5H11N2)2[H2N(CH2)3NH2]}3(1),{(C5H11N2)2[H2N(CH2)3NH2][MoO2(C10H6O2)2]}(2),{(C7H12N2)2[MoO2(C10H8O2)2]}(3)晶体结构中小分子环进行了归属.其中,配合物1和2中(C5H11N2)+的NMR研究证实了六元环由1,3-丙二胺和乙腈化合而成,配合物3中(C7H12N2)2+的NMR谱图证实了七元环由乙二胺和乙酰丙酮化合而成,并且推导出这些亲核加成-消除反应的反应机理.配合物1~3中的小分子环的合成在其它体系中尚未见报导,而在合成它们的反应中作为新产物随主体晶体析出,并由晶体结构解析和NMR得到了证实.     

Strain drived band aligment transition of the ferromagnetic VS_2/C_3N van der Waals heterostructure

Exploring two-dimensional(2 D) magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_2/C_3 N van der Waals(vdW) heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS_2 and C_3 N monolayers,our results indicate that a direct band gap with type-Ⅱ band alignment and p-doping characters are realized in the spin-up channel of the VS_2/C_3 N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱ and type-Ⅲ band alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.     

Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend

The electrical conductivity, optical and metal–semiconductor contact properties of the MEH-PPV:C₇₀ organic semiconductor have been investigated. The electrical conductivity results show that the MEH-PPV:C₇₀ film is an organic semiconductor. The optical band gap of the film was found to be 2.06 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. The refractive index dispersion curve of the film obeys the single oscillator model and E_d and E_o dispersion parameters were found to be 10.61 and 3.89 eV, respectively. The electrical characterization of the ITO/MEH-PPV:C₇₀ diode have been investigated by current–voltage characteristics. ITO/MEH-PPV:C₇₀ diode indicates a non-ideal current–voltage behavior with ideality factor n (2.50) and barrier height φ_B (0.90 eV) values.     

First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet

Based on ab initio density functional theory calculations, we demonstrate that two carbon-doped boron nitride analog of α-graphyne structures, B_3C_2N_3 and BC_6 N monolayers, are two-dimensional direct wide band gap semiconductors, and there are two inequivalent valleys in the vicinities of the vertices of their hexagonal Brillouin zones. Besides, B_3C_2N_3 and BC_6 N monolayers exhibit relatively high carrier mobilities, and their direct band gap feature is robust against the biaxial strain. More importantly, the energetically most favorable B_3C_2N_3 and BC_6 N bilayers also have direct wide band gaps, and valley polarization could be achieved by optical helicity. Finally, we show that BC_6 N monolayer might have high efficiency in photo-splitting reactions of water, and a vertical van der Waals heterostructure with a type-II energy band alignment could be designed using B_3C_2N_3 and BC_6 N monolayers. All the above-mentioned characteristics make B_3C_2N_3 and BC_6 N monolayers, bilayers, and their heterostructures recommendable candidates for applications in valleytronic devices,metal-free photocatalysts, and photovoltaic cells.     

核磁共振波谱研究氟化膦配体及其金属配合物的氟谱化学位移

研究了氟化膦类系列配位体(GPF₂:G=F,Et₂N,Me₂N,C₅H₁₀N,nPrO,PhO,neoPnO,2,5-diMePh,isoPr,etc.)及其与金属镍₍₀₎铜_(I)钼₍₀₎金_(I)形成的配合物的核磁共振氟谱化学位移的定量分子建模,发现了其中的一些有用规律.     

六角星形MoSe_2双层纳米片的制备及其光致发光性能

采用化学气相沉积法,以三氧化钼作为钼源,硒粉作为硒源,在H_2/Ar气氛下生长出硒化钼纳米片.扫描电镜、X射线衍射表征结果表明,MoSe_2产物呈六角星状,横向尺寸约10μm,具有很好的晶体质量和结构.拉曼光谱表征其结构,确定其为双层纳米片.研究表明,高温反应时间对双层纳米片的生长具有重要的影响.通过对双层纳米片的生长机理的探究,推测其经历了3个生长过程:在高温下,Mo源和Se源被气化成气态分子并发生硒化反应形成晶核;晶核呈三角形外延生长;当反应时间持续增加,在空间位阻效应的影响下,晶体以中心原子岛为核,外延耦合生长出第二层三角形,最终形成六角星状双层纳米片.光致发光光谱结果表明,六角星状MoSe_2双层纳米片在1.53 eV处具有直接带隙和1.78 eV处具有间接带隙,其较宽范围的激发光谱响应预测其在光电探测器件领域具有潜在的应用前景.     

Modeling of realistic cladding structures for air-core photonic bandgap fibers

Cladding structures of photonic bandgap fibers often have airholes of noncircular shape, and, typically, close-to-hexagonal airholes with curved corners are observed. We study photonic bandgaps in such structures by aid of a two-parameter representation of the size and curvature. For the fundamental bandgap we find that the bandgap edges (the intersections with the air line) shift toward shorter wavelengths when the air-filling fraction f is increased. The bandgap also broadens, and the relative bandwidth increases exponentially with f2. Compared with recent experiments [Nature 424, 657 (2003)] we find very good agreement.     

不同覆盖度下丙硫醇在Au(111)面吸附的理论研究

采用基于密度泛函理论的第一性原理方法研究了丙烷硫醇 (C₃H₇SH)在Au(111)面五种覆盖度(1/16, 2/16, 3/16, 4/16, 1/3) 下的未解离和解离吸附的结构、能量和吸附性质. 发现丙烷硫醇的倾斜角和吸附能均受覆盖度影响, 计算结果显示丙烷硫醇的倾斜角随着覆盖度的增大减小了6°–10°, 吸附能随覆盖度的增大减小了0.21 eV. 特别针对饱和覆盖度, 研究了三种可能的表面结构: (2√3×2√3 ight)R30°, 2√3×3和(3×3). 发现S–H键未解离时三种表面结构的吸附构型和吸附能基本一致; S–H键解离后, (2√3×2√3 ight)R30°和2√3×3结构的吸附能比以(3×3)结构的吸附能约高0.05–0.07 eV, 说明C₃H₇S在Au(111)面吸附时, 倾向于形成(2√3×2√3 ight)R30°和2√3×3结构. 此外, 采用DFT-D2方法对饱和覆盖度下C₃H₇SH分子在Au(111)面的吸附进行了范德华修正, 结果显示分子间相互作用使吸附物和Au表面的距离减小, 该相互作用对吸附能的修正值为0.53 eV, 修正后结果与实验结果接近. 关键词： 第一性原理 覆盖度 表面结构 范德华力     

Mg-Al-N三元团簇的密度泛函理论研究

运用杂化密度泛函方法B3LYP在6-311+G^*计算水平上研究Mg_xAl_yN(x,y=1-5)团簇的结构.对Mg_xAl_yN团簇最低能量结构的稳定性和电子特性进行研究.结果表明,Mg_xAl_yN(x+y≤4)团簇的构型主要是平面结构.Mg_xAl_yN团簇的最低能量结构主要是由Al_nN或Mg_x-1Al_y+1N的构型演变而来.Mg_xAl_yN团簇离解成原子或者较小团簇是相对稳定的.和相邻团簇相比,MgAl₃N和Mg₃Al₃N拥有较高的稳定性.随着团簇尺寸的增加,Mg_xAl_yN团簇同时表现出共价键,离子键和金属键的特点.另外,随着团簇尺寸的增加,团簇的垂直电离势和电子亲合能呈现小的震荡,但并没发现整体的变化规律.     

Internal field correction in far-infrared absorption of highly polar liquids

The total integrated intensity of the far-infrared absorption of highly polar liquids is analysed. It is shown that the discrepancy already observed between the theoretical result given by the Gordon sum rule corrected by the Polo Wilson internal field factor, and the experimental result, can be explained by taking into account the shape and the polarisability tensor of the molecule. New experimental results on pure liquid C₅H₅N and CH₃CN and dilutions of C₅H₅N into benzene are presented. The experimental integrated absorption of these compounds and of some previously studied liquids agree well with our theoretical determination.     

Edge stacking dislocations in two-dimensional bilayers with a small lattice mismatch

Incomplete stacking dislocations are predicted to form at edges of the shorter upper layer in two-dimensional hexagonal bilayers upon stretching the longer bottom layer. A concept of the edge Burgers vector is introduced to describe such dislocations by analogy with the Burgers vector of standard bulk dislocations. Analytical solutions for the structure and energy of edge stacking dislocations in bilayer graphene are obtained depending on the magnitude of elongation and angles between the edge Burgers vector, direction of elongation and edge. The barrier for penetration of stacking dislocations inside the bilayer is estimated. The possibilities to measure the barrier to relative motion of graphene layers and strain of graphene on a substrate by observation of edge stacking dislocations are discussed.