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1.
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons and symmetry properties of the barrier; in particular, the current reverses its direction if the spin orientation changes the sign. Microscopic origin of such a "tunneling spin-galvanic" effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wave vector of electrons.  相似文献   

2.
The spin-transfer effect is investigated for the vortex state of a magnetic nanodot. A spin current is shown to act similarly to an effective magnetic field perpendicular to the nanodot. Then a vortex with magnetization (polarity) parallel to the current polarization is energetically favorable. Following a simple energy analysis and using direct spin-lattice simulations, we predict the polarity switching of a vortex. For magnetic storage devices, an electric current is more effective to switch the polarity of a vortex in a nanodot than the magnetic field.  相似文献   

3.
尹笋  闵文静  高琨  解士杰  刘德胜 《中国物理 B》2011,20(12):127201-127201
According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.  相似文献   

4.
We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of thermally activated escape over an effective barrier. However, the spin-transfer effect produces qualitatively different behaviors than an applied magnetic field. We discuss an effective current vs field stability diagram. If the current and field are tuned so that their effects oppose one another, the magnet can exhibit telegraph-noise switching.  相似文献   

5.
We propose a novel anomalous Hall effect caused by the spin-polarized current in superconductors (SC). The spin-polarized quasiparticles flowing in SC are deflected by spin-orbit scattering to yield a quasiparticle charge imbalance in the transverse direction. Overall charge neutrality gives rise to a compensating change in the number of Cooper pairs. A transverse electric field builds up as opposed to an acceleration of the Cooper pairs, producing the Hall voltage. It is found that the Hall voltages due to the side jump and skew scattering mechanisms have different temperature dependence in the superconducting state. A spin-injection Hall device to generate the ac Josephson effect is proposed.  相似文献   

6.
Magnetic transmission x-ray microscopy is used to directly visualize the influence of a spin-polarized current on domain walls in curved permalloy wires. Pulses of nanosecond duration and of high current density up to 1.0x10(12) A/m(2) are used to move and to deform the domain wall. The current pulse drives the wall either undisturbed, i.e., as composite particle through the wire, or causes structural changes of the magnetization. Repetitive pulse measurements reveal the stochastic nature of current-induced domain-wall motion.  相似文献   

7.
We demonstrate the role of spin-polarized current pulse in activating only a subset of spin-wave normal modes in laterally confined magnetic systems. In order to derive selection rules based on geometrical considerations, the study was carried out by comparing the results of two different micromagnetic frameworks (a classical finite-difference time-domain scheme and the dynamical matrix method) and considering nanopillar devices of elliptical and circular cross-sections in different magnetic ground states (onion, S, and vortex states). The analogies and the differences existing between the mode activation process driven by spin-torque and that obtained by a magnetic field pulse are also addressed.  相似文献   

8.
We propose a mechanism by which an open quantum dot driven by two ac (radio frequency) gate voltages in the presence of a moderate in-plane magnetic field generates a spin-polarized, phase-coherent dc current. The idea combines adiabatic, nonquantized (but coherent) pumping through periodically modulated external parameters and the strong fluctuations of the electron wave function existent in chaotic cavities. We estimate that the spin polarization of the current can be observed for temperatures and Zeeman splitting energies of the order of the single-particle mean level spacing.  相似文献   

9.
《Physics letters. A》2020,384(18):126376
We investigate vortex configuration confined in antiferromagnetic thin disks. By virtue of sublattice mismatch at the disk borders, we propose a model that takes such a magnetostatic-like cost into account. The model predicts that onion-like configuration interpolates between curly and divergent vortex. Concerning its dynamics, it is shown that the vortex acquires oscillatory dynamics with well-defined amplitude and frequency that may be controlled on demand by an alternating spin-polarized current. These findings may be useful for the emerging field of antiferromagnetic topological spintronics, once vortex dynamics may be controlled by purely electronic means.  相似文献   

10.
We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50 x 100 nm(2). This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.  相似文献   

11.
孙明娟  刘要稳 《物理学报》2015,64(24):247505-247505
提出了一种特殊自旋阀结构, 其极化层(钉扎层)磁矩沿面内方向, 自由层磁矩成磁涡旋结构. 自由层在形状上设计成左右两边厚度不同的阶梯形圆盘. 微磁学模拟研究发现, 通过调控所施加的高斯型脉冲电流的大小、方向和脉冲宽度, 可以实现磁涡旋的不同旋性、不同极性的组态控制. 分析了该结构中电流调控磁涡旋旋性和极性的物理原因和微观机理.  相似文献   

12.
The viscosity is measured for a Fermi liquid, a dilute 3He-4He mixture, under extremely high magnetic field/temperature conditions (Bor=1.5 mK). The spin-splitting energy microB is substantially greater than the Fermi energy kBTF; as a consequence the polarization tends to unity and s-wave quasiparticle scattering is suppressed for T相似文献   

13.
The nonlinear dynamics of the magnetization in a spin-valve structure is investigated. Equations describing the dynamics of the magnetization in such a structure are obtained. The stability of the solution corresponding to a motionless flat domain wall is investigated. The nonlinear domain-wall dynamics are investigated in the approximation of a strong exchange interaction between the magnetic layers and in the approximation of a large magnetostatic energy. In the former case the nonlinear dynamical equations are shown to be similar to the equations describing the dynamics of the magnetization in a weak ferromagnet, and in the latter case they are similar to the equations of motion of a magnetic vortex (i.e., a vertical Bloch line) in a domain wall. Zh. éksp. Teor. Fiz. 116, 1365–1374 (October 1999)  相似文献   

14.
15.
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands reduces the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.  相似文献   

16.
One of the important requirements for spintronic devices concerns an efficient magnetization reversal, which may eventually lead to ultra-fast non-volatile magnetic memory applications. In particular, it is necessary to achieve stable sub-nanosecond switching times and to reduce magnetization “ringing”, so that the reversal will proceed along the shortest ballistic path connecting the initial and the target magnetization states. This paper is dedicated to the numerical simulations of a mono-domain ferromagnetic particle, described by the Landau–Lifshitz–Gilbert equation. We study the general case of arbitrary orientation of the applied field/current pulses, constructing dynamic diagrams for the reversal time. We have found that even short 50 ps pulses, applied at a proper angle, will induce magnetization reversal with minimal ringing effects.  相似文献   

17.
The dependence of the domain-wall velocity on the amplitude of the driving magnetic field pulses is investigated in an iron garnet film of the (YSmCa)3(FeGe)5O12 system with a (111) orientation. The results obtained are analyzed from the standpoint of existing theory. A maximum corresponding to the disruption of steady-state motion is observed on the dependence. Thereafter, the velocity at first decreases sharply and then increases. It is theorized that a process involving the periodic generation, propagation, and annihilation of horizontal Bloch lines occurs in the wall in this period. Data are obtained for the velocity saturation region, which confirm a previously proposed empirical formula and a theoretical model, according to which the saturation regime corresponds to a state of chaos. Fiz. Tverd. Tela (St. Petersburg) 39, 660–663 (April 1997)  相似文献   

18.
A spin-polarized current with the polarization direction perpendicular to a disk in the vortex ground state will result in renormalization of the effective damping of excitations on this state. As the current is increased to a threshold current Ic the effective damping will be zero and the lowest threshold current corresponds to the vortex gyrotropic mode. For larger values of the current the excitation is a nonlinear gyrotropic mode having nonsmall amplitudes and larger frequency than the linear mode. This effect occurs for any mode of the vortex-state disk, and the value of Ic is proportional to the mode frequency.  相似文献   

19.
We have studied magnetic switching by spin-polarized currents and also the magnetoresistance in sub-100-nm-diam thin-film Co/Cu/Co nanostructures, with the current flowing perpendicular to the plane of the films. By independently varying the thickness of all three layers and measuring the change of the switching currents, we test the theoretical models for spin-transfer switching. In addition, the changes in the switching current and magnetoresistance as a function of the Cu layer thickness give two independent measurements of the room-temperature spin-diffusion length in Cu.  相似文献   

20.
This paper investigates the non steady-state displacement of magnetic domain walls in a nanostrip submitted to a time-dependent spin-polarized current flowing along the nanostrip. First, numerical micromagnetic simulations show that a domain wall can move under application of a current pulse, and that the displacement resulting from a conversion of the domain wall structure is quantized. The numerical findings are subsequently explained in the framework of simplified analytic models, namely the 1D model and the point-core vortex model. We then introduce the concept of an angle linked to the magnetization of a general domain wall, and show that it allows understanding the transient phenomena quite generally. Simple analytic formulas are derived and compared to experiments. For this, charts are given for the key parameters of the domain wall mechanics, as obtained from numerical micromagnetic simulations. We finally discuss the limitations of this work, by looking at the influence of temperature elevation under current, presence of a non-adiabatic term, and of disorder.  相似文献   

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