Crossed Andreev reflection in graphene normal-superconductor-normal structures with pseudo-diffusive interfaces

In this Letter graphene normal-superconductor-normal heterostructures are modeled for studying the crossed Andreev reflection. A thin layer of undoped graphene with Fermi energy at the Dirac point at is assumed the interface between superconductor layer and each normal lead. The resulting contribution of the crossed Andreev reflection to the nonlocal conductance equals that of the electron elastic cotunneling. We explain this as another figure of merit for pseudodiffusive conduction at the Dirac point of the undoped layers. Also structures with only one undoped layer at the interface between the superconductor and one of the normal leads, as well as structures in which one of the leads is ferromagnetic, show pseudodiffusive conduction at the Dirac points.     

Strain-modulated anisotropic Andreev reflection in a graphene-based superconducting junction

We investigate the Andreev reflection across a uniaxial strained graphene-based superconducting junction. Compared with pristine graphene-based superconducting junction, three opposite properties are found. Firstly, in the regime of the interband conversion of electron-hole, the Andreev retro-reflection happens. Secondly, in the regime of the intraband conversion of electron-hole, the specular Andreev reflection happens. Thirdly, the perfect Andreev reflection, electron-hole conversion with unit efficiency, happens at a nonzero incident angle of electron. These three exotic properties arise from the strain-induced anisotropic band structure of graphene, which breaks up the original relation between the direction of velocity of particle and the direction of the corresponding wavevector. Our finding gives an insight into the understanding of Andreev reflection and provides an alternative method to modulate the Andreev reflection.     

Strong decays of the low-lying bottom strange baryons

Andreev reflection(AR) refers to the electron-hole conversion at the normal metal-superconductor interface. In a threedimensional metal with a spherical Fermi surface, retro(specular) AR can occur with the sign reversal of all three(a single)components of particle velocity. Here, we predict a novel type of AR with the inversion of two velocity components, dubbed"anomalous Andreev reflection"(AAR), which can be realized in a class of materials with a torus-shaped Fermi surface, such as doped nodal line semimetals. For its toroidal circle perpendicular to the interface, the Fermi torus doubles the AR channels and generates multiple AR processes. In particular, the AAR and retro AR are found to dominate electron transport in the light and heavy doping regimes, respectively. We show that the AAR visibly manifests itself as a ridge structure in the spatially resolved nonlocal conductance, in contrast to the peak structure for the retro AR. Our work opens a new avenue for the AR spectroscopy and offers a clear transport signature of the torus-shaped Fermi surface.     

Andreev levels in a graphene–superconductor surface

In order to consider the Dirac-like spectrum of graphene we employ the Bogoliubov de Gennes–Dirac formalism to determine the quasiparticle Andreev levels in an NS surface (normal–superconductor). The normal region is characterized by a width L while the superconducting region is semi-infinite and both regions are made of doped graphene. The quasiparticle energy spectrum is originated by the Andreev reflections that occur in the NS interface. It is shown that this spectrum depends on the width of the normal region and the Fermi energy in each region. When the Fermi energy in the normal metal is lower than the gap of the superconductor region, the spectrum is affected by specular Andreev reflections. The equation that is obtained to find the spectrum is very general and we solve it for some particular cases. We find that the energy spectrum oscillates when the Fermi energy in graphene is changed. Finally we obtain under some approximations an equation for the energy spectrum which is similar in structure as those obtained for an INS conventional junction.     

Andreev tunneling and Josephson current in light irradiated graphene

We investigate the Andreev tunneling and Josephson current in graphene irradiated with high-frequency linearly polarized light. The corresponding stroboscopic dynamics can be solved using Floquet mechanism which results in an effective stationary theory to the problem exhibiting an anisotropic Dirac spectrum and modified pseudospin-momentum locking. When applied to an irradiated normal graphene - superconductor (NS) interface, such analysis reveal Andreev reflection (AR) to become an oscillatory function of the optical strength. Specifically we find that, by varying the polarization direction we can both suppress AR considerably or cause the Andreev transport to remain maximum at sub-gap excitation energies even in the presence of Fermi level mismatch. Furthermore, we study the optical effect on the Andreev bound states (ABS) within a short normal-graphene sheet, sandwiched between two s-wave superconductors. It shows redistribution of the low energy regime in the ABS spectrum, which in turn, has major effect in shaping the Josephson super-current. Subjected to efficient tuning, such current can be sufficiently altered even at the charge neutrality point. Our observations provide useful feedback in regulating the quantum transport in Dirac-like systems, achieved via controlled off-resonant optical irradiation on them.     

Andreev reflection and bound states in topological insulator based planar and step Josephson junctions

A superconductor-topological insulator-superconductor (S/TI/S) junction having normal region at angle θ is studied theoretically to investigate the junction angle dependency of the Andreev reflection and the formation of the Andreev bound states in the step and planar S/TI/S structures. It is found that the Andreev reflection becomes θ dependent only in the presence of the potential barrier at the TI/S interface. In particular, the step and planar TI/S junction have totally different conductive behavior with bias voltage and potential barrier in the regime of retro and specular Andreev reflection. Interestingly, we find that the elliptical cross section of Dirac cone, an important feature of topological insulator with step surface defect, affects the Fabry-Perot resonance of the Andreev reflection induced Andreev bound states (which become Majorana zero energy states at low chemical potential) in the step S/TI/S structure. Unlike the usual planar S/TI/S structures, we find these ellipticity affected Andreev bound states lead to non-monotonic Josephson super-current in the step S/TI/S structure whose non-monotonicity can be controlled with the use of the potential barrier, which may find applications in nanoelectronics.     

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier

The quantum Goos-H?nchen effect in graphene is found to be the lateral shift of Dirac fermions on the total reflection at a single p-n interface. In this paper, we investigate the lateral shifts of Dirac fermions in transmission through a monolayer graphene barrier. Compared to the smallness of the lateral shifts in total reflection, the lateral shifts can be enhanced by the transmission resonances when the incidence angle is less than the critical angle for total reflection. It is also found that the lateral shifts, as the function of the barrier’s width and incidence angle, can be negative and positive in the cases of Klein tunneling and classical motion. The modulation of the lateral shifts can be realized by changing the electrostatic potential and induced gap, which gives rise to some applications in graphene-based devices.     

Manipulation of resonant tunneling by substrate-induced inhomogeneous energy band gaps in graphene with square superlattice potentials

We investigate the resonant transmission of Dirac electrons through inhomogeneous band gap graphene with square superlattice potentials by transfer matrix method. The effects of the incident angle of the electrons, Fermi energy and substrate-induced Dirac gaps on the transmission are considered. It is found that the Dirac gap of graphene adds another degree of freedom with respect to the incident angle, the Fermi energy and the parameters of periodic superlattice potentials (i.e., the number, width and height of the barriers) for the transmission. In particular, the inhomogeneous Dirac gap induced by staggered substrates can be used to manipulate the transmission. The properties of the conductance and Fano factor at the resonant peaks are found to be affected by the gaps significantly. The results may be helpful for the practical application of graphene-based electronic devices.     

Manifestation of the superconducting pairing of repulsive particles with a large total momentum in Andreev reflection

Features of Andreev reflection at the normal metal-superconductor interface in the presence of repulsive-interaction-induced pairing with a large total momentum K have been analyzed. When the direction of the motion of a hole arising upon the formation of a pair with K ≠ 0 by an incident electron corresponds to transmission, the intensity of Andreev reflection decreases compared to the case K = 0. Another cause of the decrease in the intensity is that, owing to the repulsive interaction, the superconducting order parameter has a zero line, and the quasiparticle energy minimum, which determines the turning point, does not coincide with the Fermi contour on which the quasiparticle charge changes its sign (charge asymmetry).     

Selective Andreev reflection tuned by magnetic barriers in graphene-superconductor hybrid junctions

We investigate the direction-dependent Andreev reflection of normal state-superconductor junctions both in monolayer and bilayer graphene with a single magnetic barrier by means of the Green?s function formalism. Such a barrier is capable of tuning the preferred angles of incidence for the Andreev retro-reflection. It enhances the specular reflection probability for certain angles of incidence in bilayer-based hybrid structures. We further study the impacts of magnetic barriers on the monolayer and bilayer hybrid structures by calculating the differential conductances within the Blonder–Tinkham–Klapwijk formula for experimental comparisons.     

Enhancement of subgap conductance in a graphene superconductor junction by valley polarization

We theoretically study the differential conductance of a graphene/graphene superconductor junction, where the valley polarization of Dirac electrons is considered in the nonsuperconducting region. It is shown that the subgap conductance will increase monotonically with the valley-polarization strength when the chemical potential μ is near the Dirac point μ≤ 3?(? is the superconducting gap), whereas it will decrease monotonically when μ is far away from the Dirac point, μ≥ 5?.The former case is induced by the specular Andreev reflection while the retro-reflection accounts for the later result. Our findings may shed light on the control of conductance of a graphene superconductor junction by valley polarization.     

Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells

We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and free-electron continuum.Electron–hole conversion at the barrier interfaces can be controlled by introducing an asymmetry between barriers and taking into account the effect of the interactions of the graphene sheet with the substrate.The interaction with the substrate induces an effective mass to carriers,allowing observation of Fabry–P′erot resonances under normal incidence and extinction of Klein tunneling.The asymmetry,between barriers creates a transmission gap between confined states and free-electron continuum,allowing the large graphene asymmetric quantum well to be exploited as a photo-detector operating at mid-and far-infrared frequency regimes.     

How to distinguish between specular and retroconfigurations for Andreev reflection in graphene rings

We numerically investigate Andreev reflection in a graphene ring with one normal conducting and one superconducting lead by solving the Bogoliubov-de Gennes equation within the Landauer-Büttiker formalism. By tuning chemical potential and bias voltage, it is possible to switch between regimes where electron and hole originate from the same band (retroconfiguration) or from different bands (specular configuration) of the graphene dispersion, respectively. We find that the dominant contributions to the Aharonov-Bohm conductance oscillations in the subgap transport are of period h/2e in retroconfiguration and of period h/e in specular configuration, confirming the predictions obtained from a qualitative analysis of interfering scattering paths. Because of the robustness against disorder and moderate changes to the system, this provides a clear signature to distinguish both types of Andreev reflection processes in graphene.     

Double Andreev reflections at surface states of the topological insulators with hexagonal warping

We study the Andreev reflection(AR)at the interface of the topological insulator with hexagonal warping and superconductor junction.Due to the hexagonal warping effect,the double ARs are found in a certain range of the incident angle,where for one incident electron beam,two beams of holes are reflected back.Interestingly,both the beams of holes are reflected as retro-AR on the same side of the normal line of the interface but with different reflection angles,different from the previously reported double AR with one retro-AR and one specular-AR.The double reflections owing to the warping effect show the optics-like property of the Dirac fermion and can stimulate the double reflections of light in anisotropic crystals.In addition,we find that the double ARs are dependent on the hexagonal warping parameter nonmonotonically,and in an intermediate strength the double AR phenomenon is prominent,providing a possibility to explore the warping parameter of topological insulators.     

Edge states at the interface between monolayer and bilayer graphene

The electronic properties for monolayer-bilayer hybrid graphene with zigzag interface are studied by both the Dirac equation and numerical calculation in zero field and in a magnetic field. Basically there are two types of zigzag interface dependent on the way of lattice stacking at the edge. Our study shows they have different locations of the localized edge states. Accordingly, the energy-momentum dispersion and local density of states behave quit differently along the interface near the Fermi energy EF=0.     

Specular Andreev reflection in the interface of a two-dimensional semiconductor with Rashba spin-orbit coupling and a d-wave superconductor

We reveal that the recently discovered specular Andreev reflection (SAR) [C. W. J. Beenakker, Phys. Rev. Lett. 97, 067007 (2006)] can occur in semiconductors where the spin-orbit coupling is finite. We demonstrate this finding in the hybrid of a two-dimensional electron gas with Rashba spin-orbit coupling and a superconductor. In the limit of low density or a strong spin-orbit coupling, specular Andreev reflection is finite. We also show that unit electron-hole conversion is possible in a specular Andreev reflection due to the different topological structures of the equal-energy surface between electrons and holes. The SAR in the semiconductor is determined by the relative orientation of wave vector to group velocity, which can be analyzed by ray equations.     

Spin Polarization and Andreev Conductance through a Diluted Magnetic Semiconductor Quantum Wire with Spin--Orbit Interaction

Spin-dependent Andreev reflection and spin polarization through a diluted magnetic semiconductor quantum wire coupled to normal metallic and superconductor electrodes are investigated using scattering theory. When the spin-orbit coupling is considered, more Andreev conductance steps appear at the same Fermi energy. Magnetic semiconductor quantum wire separates the spin-up and spin-down electrons. The Fermi energy, at which different- spin-state electrons begin to separate, becomes lower due to the effect of the spin-orbit interaction. The spin filter effect can be measured more easily by investigating the Andreev conductance than by investigating the normal conductance.     

Quantum transport through 3D Dirac materials

Bismuth and its alloys provide a paradigm to realize three dimensional materials whose low-energy effective theory is given by Dirac equation in 3+1 dimensions. We study the quantum transport properties of three dimensional Dirac materials within the framework of Landauer–Büttiker formalism. Charge carriers in normal metal satisfying the Schrödinger equation, can be split into four-component with appropriate matching conditions at the boundary with the three dimensional Dirac material (3DDM). We calculate the conductance and the Fano factor of an interface separating 3DDM from a normal metal, as well as the conductance through a slab of 3DDM. Under certain circumstances the 3DDM appears transparent to electrons hitting the 3DDM. We find that electrons hitting the metal-3DDM interface from metallic side can enter 3DDM in a reversed spin state as soon as their angle of incidence deviates from the direction perpendicular to interface. However the presence of a second interface completely cancels this effect.     

Dirac semimetal in three dimensions

We show that the pseudorelativistic physics of graphene near the Fermi level can be extended to three dimensional (3D) materials. Unlike in phase transitions from inversion symmetric topological to normal insulators, we show that particular space groups also allow 3D Dirac points as symmetry protected degeneracies. We provide criteria necessary to identify these groups and, as an example, present ab initio calculations of β-cristobalite BiO(2) which exhibits three Dirac points at the Fermi level. We find that β-cristobalite BiO(2) is metastable, so it can be physically realized as a 3D analog to graphene.