Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.     

Thermoelectric efficiency and compatibility

The intensive reduced efficiency eta(r) is derived for thermoelectric power generation (in one dimension) from intensive fields and currents, giving eta(r)=(E x J) divided by (- inverted Delta)T x J(S). The overall efficiency is derivable from a thermodynamic state function, Phi=1 divided by u + alphaT, where we introduce u=J divided by kappa (inverted Delta)T as the relative current density. The method simplifies the computation and clarifies the physics behind thermoelectric devices by revealing a new materials property s=(sqrt[1+zT]-1) divided by (alphaT), which we call the compatibility factor. Materials with dissimilar compatibility factors cannot be combined by segmentation into an efficient thermoelectric generator because of constraints imposed on u. Thus, control of the compatibility factor s is, in addition to z, essential for efficient operation of a thermoelectric device, and thus will facilitate rational materials selection, device design, and the engineering of functionally graded materials.     

Observation of toroidal flow antiparallel to the <E(r) x B(straight theta)> drift direction in the hot electron mode plasmas in the compact helical system

A toroidal flow antiparallel to the drift direction is observed in the hot electron mode plasmas when a large positive electric field and a sharp electron temperature gradient are sustained inside the internal transport barrier in the Compact Helical System. This toroidal flow reaches up to 5x10(4) m/s at the plasma center, and it is large enough to reverse the toroidal flow driven by a tangentially injected neutral beam. These observations clearly show the plasma favors flow in the minimum nablaB direction at the transport barrier.     

Faraday instability in a surface-frozen liquid

Faraday surface instability measurements of the critical acceleration, a(c), and wave number, k(c), for standing surface waves on a tetracosanol (C24H50) melt exhibit abrupt changes at T(s)=54 degrees C, approximately 4 degrees C above the bulk freezing temperature. The measured variations of a(c) and k(c) vs temperature and driving frequency are accounted for quantitatively by a hydrodynamic model, revealing a change from a free-slip surface flow, generic for a free liquid surface (T>T(s)), to a surface-pinned, no-slip flow, characteristic of a flow near a wetted solid wall (T相似文献   

A Hund's Case (a) Analysis of the

We have recently observed a weak electronic subband near 513 nm in the electronic spectrum of cobalt monofluoride. A rotational analysis has led to its identification as a (3)Phi(3)-X(3)Phi(4) subband where DeltaSigma=-1 and DeltaOmega=-1. This critical datum has been used in combination with our previously published data (A. G. Adam et al., 1994, Chem. Phys. Lett. 230, 82) to obtain a Hund's case (a) analysis for the [18.8](3)Phi(i)-X(3)Phi(i) transition of CoF. The spectroscopic constants and electronic states of CoF are compared to those of CoH and Co(+). Two distinct excited (3)Phi electronic state vibrational progressions have also been identified in the CoF spectra. The band positions and rotational constants have been used to calculate equilibrium constants for the excited (3)Phi states. The two electronic transitions are identified as the K(3)Phi(i)-X(3)Phi(i) and L(3)Phi(i)-X(3)Phi(i) transitions based on comparisons with CoH. Copyright 2001 Academic Press.     

Jamming, two-fluid behavior, and "self-filtration" in concentrated particulate suspensions

We study the flow of model hard-sphere colloidal suspensions at high volume fraction Phi driven through a constriction by a pressure gradient. Above a particle-size dependent limit Phi(0), direct microscopic observations demonstrate jamming and unjamming-conversion of fluid to solid and vice versa-during flow. We show that such a jamming flow produces a reduction in colloid concentration Phi(x) downstream of the constriction. We propose that this "self-filtration" effect is due to a combination of jamming of the particulate part of the system and continuing flow of the liquid part, i.e., the solvent, through the pores of the jammed solid. Thus we link jamming in colloidal and granular media with a "two-fluid-like" picture of the flow of concentrated suspensions. Results are also discussed in the light of the original experiments of Reynolds on dilation in granular materials.     

Universality class of criticality in the restricted primitive model electrolyte

The 1:1 equisized hard-sphere electrolyte or restricted primitive model has been simulated via grand-canonical fine-discretization Monte Carlo. Newly devised unbiased finite-size extrapolation methods using loci in the temperature-density or (T,rho) plane of isothermal rho(2-k) vs pressure inflections, of Q identical with(2)/ maxima, and of canonical and C(V) criticality, yield estimates of (T(c),rho(c)) to +/-(0.04,3)%. Extrapolated exponents and Q ratio are (gamma,nu,Q(c)) = [1.24(3), 0.63(3); 0.624(2)], which support Ising (n = 1) behavior with (1.23(9), 0.630(3); 0.623(6)), but exclude classical, XY (n = 2), self-avoiding walk (n = 0), and n = 1 criticality with potentials varphi(r)>Phi/r(4.9) when r-->infinity.     

Complex methyl group and hydrogen-bonded proton motions in terms of the Arrhenius and Schrödinger equations

Equations for the temperature dependence of the spectral densities J(is)(m)(momega(I) +/-omega(T)), where m=1, 2, omega(I) and omega(T) are the resonance and tunnel splitting angular frequencies, in the presence of a complex motion, have been derived. The spin pairs of the protons or deuterons of the methyl group perform a complex motion consisting of three component motions. Two of them involve mass transportation over the barrier and through the barrier. They are characterized by k((H)) (Arrhenius) and k((T)) (Schr?dinger) rate constants, respectively. The third motion causes fluctuations of the frequencies (nomega(I)+/-omega(T)) and it is related to the lifetime of the methyl spin at the energy level influenced by the rotor-bath interactions. These interactions induce rapid transitions, changing the symmetry of the torsional sublevels either from A to E or from E(a) to E(b). The correlation function for this third motion (k((omega)) rate constant) has been proposed by Müller-Warmuth et al. The spectral densities of the methyl group hindered rotation (k((H)), k((T)) and k((omega)) rate constants) differ from the spectral densities of the proton transfer (k((H)) and k((T)) rate constants) because three compound motions contribute to the complex motion of the methyl group. The recently derived equation [Formula: see text] , where [Formula: see text] and [Formula: see text] are the fraction and energy of particles with energies from zero to E(H), is taken into account in the calculations of the spectral densities. This equation follows from Maxwell's distribution of thermal energy. The spectral densities derived are applied to analyse the experimental temperature dependencies of proton and deuteron spin-lattice relaxation rate in solids containing the methyl group. A wide range of temperatures from zero Kelvin up to the melting point is considered. It has been established that the motion characterized by k((omega)) influences the spin-lattice relaxation up to the temperature T(tun) only. This temperature is directly determined by the equation C(p)T=E(H) (thermal energy=activation energy), where C(p) is the molar heat capacity. Probably the cessation of the third motion is a result of the de Broglie wavelength related to this motion becoming too short. As shown recently, the potential barrier can be an obstacle for the de Broglie wave. The theoretical equations derived in this paper are compared to those known in the literature.     

Highly stable carbon-doped Cu films on barrierless Si

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 °C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.     

Spin relaxation and linear-in-electric-field frequency shift in an arbitrary, time-independent magnetic field

A method is presented to calculate the spin relaxation times T(1), T(2) due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift δω(E) when an electric field is present, in the diffusion approximation for spins confined to a rectangular cell. It is found that the rectangular cell geometry admits of a general result for T(1), T(2), and δω(E) in terms of the spatial cosine-transform components of the magnetic field. The result is applied to the case of a permanently-magnetized dipole impurity near the cell.     

Development of the method of an electrohydrodynamic force effect on a boundary layer for active control of aerodynamic flows

The results of investigations on the possibility of an electrohydrodynamic force effect on a gas flow implemented with the help of a barrier discharge are presented. A new method of controlling the laminar flow around a base with suppression of instabilities of the incoming flow due to electrohydrodynamic force action on the boundary layer near the forward edge of a swept wing is proposed. An efficient multidischarge actuator system is developed and created for active control of aerodynamic flows with induced-air-flow characteristics exceeding the world analogues.     

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 °C, could diffuse through c-NiW at 550 °C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.     

The role of the spray pyrolysed Al<Subscript>2</Subscript>O<Subscript>3</Subscript> barrier layer in achieving high efficiency solar cells on flexible steel substrates

Thin film chalcopyrite solar cells grown on light-weight, flexible steel substrates are poised to enter the photovoltaic market. To guarantee good solar cell performance, the diffusion of iron from the steel into the CIGSe absorber material must be hindered during layer deposition. A barrier layer is thus required to isolate the solar module from the metal substrate, both electronically and chemically. Ideally the barrier layer would be deposited by a cheap roll-to-roll process suitable to coat flexible steel substrates. Aluminium oxide deposited by spray pyrolysis matches the criteria. The coating is homogeneous over rough substrates allowing comparatively thin barrier layers to be utilized. In this article, solar cell results are presented contrasting the device performance made with a barrier layer to that without a barrier layer. Secondary Ion Mass spectrometry (SIMS) measurements show that the spray pyrolysed barrier layer diminishes iron diffusion to the chalcopyrite absorber layer. The role of sodium, imperative for the growth of high efficiency chalcopyrite solar cells, and how it interacts with Al₂O₃ is discussed.     

Fen/Crn超晶格磁性和电子结构的第一性原理研究

采用基于密度泛函原理的全势线性缀加平面波方法(FLAPW),计算了超晶格Fen/Crn(n=1,3,5)的电子结构和磁性,结果表明铁磁耦合状态是基态,铁层的磁矩由于铬层的加入而有一些变化,铁层的磁矩随着n的增大而逐渐增强.铬层的磁矩的方向是正负相间变化的,相邻的铁层和铬层之间是反铁磁性耦合的,铁原子的d轨道和铬原子的d轨道在费米能附近有中等程度的杂化.     

Model for reversible colloidal gelation

We report a numerical study, covering a wide range of packing fraction Phi and temperature T, for a system of particles interacting via a square well potential supplemented by an additional constraint on the maximum number n(max) of bonded interactions. We show that, when n(max)<6, the liquid-gas coexistence region shrinks, giving access to regions of low Phi where dynamics can be followed down to low T without an intervening phase separation. We characterize these arrested states at low densities (gel states) in terms of structure and dynamical slowing down, pointing out features which are very different from the standard glassy states observed at high Phi values.     

DNS of compressible turbulent boundary layer around a sharp cone

Direct numerical simulation of the turbulent boundary layer over a sharp cone with 20° cone angle (or 10° half-cone angle) is performed by using the mixed seventh-order up-wind biased finite difference scheme and sixth-order central difference scheme. The free stream Mach number is 0.7 and free stream unit Reynolds number is 250000/inch. The characteristics of transition and turbulence of the sharp cone boundary layer are compared with those of the flat plate boundary layer. Statistics of fully developed turbulent flow agree well with the experimental and theoretical data for the turbulent flat-plate boundary layer flow. The near wall streak-like structure is shown and the average space between streaks (normalized by the local wall unit) keeps approximately invariable at different streamwise locations. The turbulent energy equation in the cylindrical coordinate is given and turbulent energy budget is studied. The computed results show that the effect of circumferential curvature on turbulence characteristics is not obvious.     

注入和输运对单层有机发光器件复合发光的影响

通过分析聚合物电致发光器件中载流子注入、输运、激子的解离与复合过程,提出了激子解离与复合的理论模型. 基于电流连续性方程和Poisson方程,给出了激子复合密度、电流密度及复合效率表达式.研究两电极与有机层之间在Ohmic和Fowler-Nordheim接触条件下载流子迁移率对器件中激子的复合密度及外加电压和注入势垒对器件电流和复合效率的影响.结果表明:1)在一个较宽的注入势垒和迁移率范围内,复合密度不是由两个注入电极的相对注入比决定而是由有机层电子和空穴迁移率之比所支配;2)固定阴极势垒,而阳极势垒由小变大时,器件电流由接触限制向空间电荷限制转变;3)复合效率随外电压升高先增加,当电压达一临界值时而陡降,存在一个最佳的注入势垒值.结果说明:电极与有机层的能带匹配及有机层间的迁移率匹配对器件复合发光有着极其重要的影响.其计算值与所报道的理论结果相符.     

A pulse EPR study of longitudinal relaxation of the stable radical in gamma-irradiated L-alanine

The longitudinal relaxation rate of the first stable alanine radical, SAR1, was studied by employing pulse EPR technique over a wide temperature interval (5-290 K). The complex nonexponential recovery of the longitudinal magnetization in this temperature interval has been described with two characteristic relaxation times, 1/T*(1a) as the faster component and 1/T*(1b) as the slower component, respectively. It was shown that 1/T*(1a) is strongly affected by the CH(3) group dynamics of the SAR1 center. The complete temperature dependence of 1/T*(1a) was described by invoking several relaxation mechanisms that involve hindered motion of the CH(3) group from classical rotational motion to coherent rotational tunneling. It was shown that all relevant relaxation mechanisms are determined by a single correlation time with the potential barrier (Delta E/k=1570 K). On the other hand the temperature dependence of 1/T*(1b) is related to the motional dynamics of the neighborly NH(3) and CH(3) groups. We found a larger average potential barrier for this motion (Delta E/k=2150 K) corresponding to smaller tunneling frequencies of the neighbor groups.     

Dissolution behaviour of the barrier layer of porous oxide films on aluminum formed in phosphoric acid studied by a re-anodizing technique

Chemical dissolution of the barrier layer of porous oxide films formed on aluminum foil (99.5% purity) in the 4% phosphoric acid after immersion in 2 mol dm⁻³ sulphuric acid at 50 °C has been studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It has been found that the barrier layer material may consist of two or three regions according to the dissolution rate. The barrier oxide contains two layers at 35 V: the outer layer with the highest dissolution rate and the inner layer with low dissolution rate. The barrier oxide contains three layers at 40 V and above it: the outer layer with high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with low dissolution rate. It has been shown that there is a dependence of the dissolution rate on the surface charge of anodic oxide film. Annealing of porous alumina films for 1 h at 200 °C leads to disappearance of layers with different dissolution rates in the barrier oxide. We explained this phenomenon by the absence of the space charge in the barrier oxide of such films.     

超分辨近场结构技术及其应用

超分辨近场结构(Super RENS)技术是在传统的超分辨光盘技术和近场光学的基础上发展起来的新技术。介绍了Super RENS技术的基本原理:利用掩膜层的非线性效应或表面等离子体增强效应,在近场区域可以记录、读出超过衍射极限的信号。综述了该技术在纳米光信息存储和光刻方面应用研究的最新进展,提出了存在的问题,展望了它的发展前景。