Dynamical properties of the one-dimensional band insulator (NbSe4)3I

Optical and photoemission experiments reveal unexpected spectral signatures of one-dimensional band insulators. In the model compound (NbSe (4))3I the optical conductivity decays as a power law sigma(1)(omega) approximately omega(-4.25) above a sharp gap edge. Photoemission observes both the valence and a shadow band, produced by a commensurate superstructure. We identify an optical and photoemission band gap consistent with other measurements but much smaller than the energy scale defined by the dispersion of the band peak in the photoemission spectra.     

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic Ga(1-x)MnxAs: impurity bands inside the band gap

The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga(1-x)MnxAs, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E0 transition from the valence band to the conduction band is negative indicating that the p-d exchange interactions between the p carriers and d spin is antiferromagnetic. The negative E0 MCD signal also indicates that the hole doping of the valence band is not so large as previously assumed. The impurity bands seem to play important roles for the ferromagnetism of Ga(1-x)MnxAs.     

Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.     

Antiferromagnetic s-d exchange coupling in GaMnAs

Measurements of coherent electron spin dynamics in Ga1-xMnxAs/Al0.4Ga0.6As quantum wells with 0.0006%相似文献   

ab plane ac conductivity in the cuprates: pseudogap effects below Tc

Building on our understanding of the superfluid density rho(s)(T), we show how the pseudogap enters the in-plane optical conductivity sigma(omega,T) for temperatures T相似文献   

Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.     

Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism

We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature T_{C} from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice.     

Role of disorder in Mn:GaAs, Cr:GaAs, and Cr:GaN

We present calculations of magnetic exchange interactions and critical temperature T(c) in Ga1-xMnxAs, Ga1-xCrxAs, and Ga1-xCrxN. The local spin-density approximation is combined with a linear-response technique to map the magnetic energy onto a Heisenberg Hamiltonion, but no significant further approximations are made. We show the following: (i) configurational disorder results in large dispersions in the pairwise exchange interactions; (ii) the disorder strongly reduces T(c); (iii) clustering in the magnetic atoms, whose tendency is predicted from total-energy considerations, further reduces T(c), while ordering the dopants on a lattice increases it. With all the factors taken into account, T(c) is reasonably predicted by the local spin-density approximation in Mn:GaAs without the need to invoke compensation by donor impurities.     

Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.     

Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.     

Onset of Ferromagnetism in Low-Doped Ga1-xMnxAs

We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of Ga1-xMnxAs. We compare it with measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, which originate from Mn disorder and As antisite defects. The experimentally determined hopping energy is an excellent predictor of the Curie temperature, in agreement with the theory.     

Observation of out-of-phase bilayer plasmons in YBa(2)Cu(3)O(7-delta)

The temperature dependence of the c-axis optical conductivity sigma(omega) of optimally and overdoped YBa2Cu3Ox ( x = 6.93 and 7) is reported in the far- (FIR) and midinfrared (MIR) range. Below T(c) we observe a transfer of spectral weight from the FIR not only to the condensate at omega = 0, but also to a new peak in the MIR. This peak is naturally explained as a transverse out-of-phase bilayer plasmon by a model for sigma(omega) which takes the layered crystal structure into account. With decreasing doping the plasmon shifts to lower frequencies and can be identified with the surprising and so far not understood FIR feature reported in underdoped bilayer cuprates.     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

Qualitative modification of the high energy atomic photoionization cross section

It is demonstrated that the nonrelativistic high energy omega-->infinity behavior of the photoionization cross section of an nl atomic subshell, sigma(nl)(omega), for l>0 is independent of l and is given by sigma(nl)(omega) approximately 1/omega(9/2), rather than the previously generally accepted sigma(nl)(omega) approximately 1/omega(l+7/2). Furthermore, for l = 1, although the exponent does not change, the coefficient is significantly altered. This modification of sigma(nl)(omega) is due to the interchannel interaction between ns photoionization channels and l not equal0 channels in the atom. As a result, for the photoionization of l not equal0 electrons, the single-particle approximation is never correct in the omega-->infinity limit. This has important consequences for sum rule calculations.     

Universal scaling of the conductivity at the superfluid-insulator phase transition

The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in the experimentally relevant thermodynamic limit at finite temperature T. We find clear evidence for deviations from omega k scaling of the conductivity towards omega k/T scaling at low Matsubara frequencies omega k. By careful analytic continuation using Padé approximants we show that this behavior carries over to the real frequency axis where the conductivity scales with omega/T at small frequencies and low temperatures. We estimate the universal dc conductivity to be sigma* = 0.45(5)Q2/h, distinct from previous estimates in the T = 0, omega/T > 1 limit.     

NO分子双光子诱导荧光的自吸收现象

以皮秒Nd:YAG激光器抽运的光学参量发生/放大器为激发光源,获得了在452.4 nm波长激光激发下,NO分子的双光子激光诱导色散荧光光谱(LIDFS)。并由此得到了NO分子基电子态的振动基频和振动非谐性系数分别为ω″_e=(1 904.7±7.3) cm-1, ω″_eχ″_e=(14.2±1.2) cm-1, ω″ey″_e=-(0.021 8±0.009 1) cm-1。在NO分子双光子LIDFS实验研究中,首次观测到了NO分子强烈的自吸收现象,在较高样品气压条件下,色散荧光光谱图中对应A 2Σ(v′＝0)→X 2Π(v″＝0)跃迁的谱线消失。实验结果表明,自吸收现象导致的该跃迁谱线强度的变化,随样品气压、激光场和样品作用区到荧光接收窗口距离的减小而减小。     

Magneto-oscillations due to electron-electron interactions in the ac conductivity of a two-dimensional electron gas

Electron-electron interactions give rise to the correction, deltasigma(int)(omega), to the ac magnetoconductivity, sigma(omega), of a clean 2D electron gas that is periodic in omega_(c)(-1), where omega_(c) is the cyclotron frequency. Unlike conventional harmonics of the cyclotron resonance, which are periodic with omega, this correction is periodic with omega(3/2). Oscillations in deltasigma(int)(omega) develop at low magnetic fields, omega_(c)相似文献   

Electronic structure of QD arrays: application to intermediate-band solar cells

Intermediate band solar cells (IBSC) have been proposed as a potential design for the next generation of highly efficient photo-voltaic devices. Quantum nanostructures, such as quantum dots (QD), arranged in super-lattice (SL) arrays produce a mini-band (IB) that is separated by a region of zero density of states from other states in the conduction band. Additional absorption from the valence band to the IB and IB to the conduction band allows two photons with energies below the energy gap to be harvested in generating one electron-hole pair. We present a theoretical study of the electronic and optical properties of the IB formed by an InAs/GaAs QD array. The calculations are based on an 8-band k · p Hamiltonian, incorporating mixing between valence and conduction states, strain and piezoelectric field. Theoretical results of the the mini-band width variation with the period of the QD array in the z direction are presented. For one particular spacer distance, d _z = 4 nm, we report detailed variation of the optical dipole matrix elements through the mini-band and identify the character of the states involved. This approach captures the essential physics of the absorption processes in a realistic model of the IBSC structure and will be used to provide input parameters for predictive modelling of transport properties.     

Thermodynamic properties of gold–water nanofluids using molecular dynamics

Conflicts and discrepancies around nanoparticle (NP) size effect on the optical properties of metal NPs of sizes below the mean free path of electron can be traced to the internal damping effect of the hybrid resonance of the inner band (IB) and the conduction band (CB) electrons of the noble metals. We present a scheme to show how alternative mathematical formulation of the physics of interaction between the CB and the IB electrons of NP sizes <50?nm justifies this and resolves the conflicts. While a number of controversies exist between classical and quantum theories over the phenomenological factors to attribute to the NP size effect on the absorption bandwidth, this article shows that the bandwidth behavior can be well predicted from a different treatment of the IB damping effect, without invoking any of the controversial phenomenological factors. It finds that the IB damping effect is mainly frequency dependent and only partly size dependent and shows how its influence on the surface plasmon resonance can be modeled to show the influence of NP size on the absorption properties. Through the model, it is revealed that strong coupling of IB and CB electrons drastically alters the absorption spectra, splitting it into distinctive dipole and quadrupole modes and even introduce a behavioral switch. It finds a strong overlap between the IB and the CB absorptions for Au and Cu but not Ag, which is sensitive to the NP environment. The CB modes shift with the changing refractive index of the medium in a way that can allow their independent excitation, free of influence of the IB electrons. Through a hybrid of parameters, the model further finds that metal NP sizes can be established not only by their spectral absorption peak locations but also from a proper correlation of the peak location and the bandwidth (FWHM).