Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well

We report the photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well. When this quantum dots–quantum well hybrid heterostructure is biased beyond +1 or −1 V, the photocurrent response manifests itself as a step-like enhancement, increasing linearly with the light intensity. Most probably, at proper bias condition, the pulling down of the X minimum of GaAs at the outgoing interface of the emitter barrier by the photovoltaic effect in GaAs QW will initiate the Γ–X–X tunneling at much lower bias as compared with that in the dark. That gives rise to the observed photocurrent response.     

引入n型InGaN/GaN超晶格层提高量子阱特性研究

利用金属有机物化学气相淀积技术在蓝宝石衬底上生长了InGaN/GaN量子阱结构. 研究了引入n型InGaN薄层或InGaN/GaN超晶格层的量子阱特性,结果表明通过引入n型InGaN薄层或InGaN/GaN超晶格层缓解了量子阱有源区中的应力,改善了多量子阱表面形貌,减少了V型缺陷密度,而且提高了多量子阱的光致发光强度,从而也改进了LED的发光效率. 关键词： InGaN/GaN多量子阱 原子力显微镜 X射线双晶衍射 光致发光     

Time-dependent density functional theory for quantum transport

The rapid miniaturization of electronic devices motivates research interests in quantum transport. Recently time-dependent quantum transport has become an important research topic. Here we review recent progresses in the development of time-dependent density-functional theory for quantum transport including the theoretical foundation and numerical algorithms. In particular, the reducedsingle electron density matrix based hierarchical equation of motion, which can be derived from Liouville–von Neumann equation, is reviewed in details. The numerical implementation is discussed and simulation results of realistic devices will be given.     

Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.     

Potential‐inserted quantum well design for quantum cascade terahertz lasers

We report on a new design of terahertz quantum cascade laser based on a single, potential‐inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight‐binding calculations, and performances are compared to that of the classical three‐well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature‐independent contrast between phonon‐induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.     

Time-dependent electron transport in HgTe/CdTe quantum wells

Based on the Floquet theory and Keldysh's nonequilibrium Green's function methods, we study the electron transport through the HgTe/CdTe quantum wells (QWs) irradiated by a monochromatic laser field. We find that when the laser field is applied, the edge states are split into a series of sidebands. When the Fermi level lies among these sidebands, the quantized plateau of the conductance is destroyed. Instead, the conductance versus the radiation frequency exhibits the successive oscillation peaks corresponding to the resonant tunneling through the sidebands of the edge states. The resonant interaction between the quasiparticles and the radiation field opens the gaps in the crossing region of the sidebands, which can be tuned by the radiation strength and frequency. This leads to the shift of the oscillation peaks in the conductance. We also show that the amplitudes of the oscillation peaks in the conductance are governed by the radiation strength and frequency.     

Quantum-mechanical versus semiclassical capture and transport properties in quantum well laser structures

We have studied experimentally and modelled theoretically the capture properties and transport mechanisms of electrons and holes in laser structures. We describe first the extreme case where the barrier thickness is very large: then semiclassical drift-diffusion equations may be applied and quantum-mechanical effects at the edge of the well are negligible. A second extreme case occurs when the barrier is narrow enough for quantum mechanics to apply fully. There, strong variations of the capture time with the well width are expected and observed. In real laser structures, dimensions are such that we are in an intermediate case and both aspects have to be taken into account. We give some typical values for diffusion/capture mechanism induced delay times in such a case.     

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5–2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8?2)×10⁷ cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4×10¹² cm^?2 in the QW.     

Carrier transport effects in quantum well lasers

EditorialSpecial Issue

Carrier transport effects in quantum well lasers     

周期耦合量子阱中的输运问题

采用Gurvitz等人直接求解薛定谔方程的方法并结合数值计算,分析了驱动频率对周期耦合量子阱体系的电流的影响.结果表明：当驱动频率小于耦合量子阱间的能级差时,随着驱动频率的增大,系统平衡时的电流增加,当驱动频率大于耦合量子阱间能级差时,随着驱动频率的增大,平衡时的电流减小.这样,通过控制外场驱动频率来达到控制电流的目的. 关键词： 量子阱 驱动频率 电流     

Influence of quantum well states on transport properties of double barrier junctions

A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the middle metallic layer thickness on the statistics of resonant levels is investigated.     

Time-dependent wave-packet approach to the quantum transport of carbon nanotubes with vacancies

We investigate the vacancy effect on the electronic transport properties of the (5,5)-metallic and (5,0)-semiconducting carbon nanotubes using the time-dependent wave-packet approach based on the Kubo-Greenwood formula within the tight-binding approximation. We found that the metallic and semiconducting carbon nanotubes show different electronic transport properties for the states created by vacancies.     

Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots

We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.     

Carrier transport effects in quantum well lasers: an overview

Early theoretical predictions and later experimental work have shown that lasers with quantum well active areas have enhanced differential gain over bulk lasers. The resonance frequency in a semiconductor laser is proportional to the square root of the differential gain. The resonance frequency is directly related to the modulation bandwidth, and the enhancement in the intrinsic differential gain led to theoretical predictions of increased modulation bandwidth in quantum well lasers. This enhancement in the modulation bandwidth proved to be elusive initially, and later it was realized that other factors, namely carrier transport effects, played a more dominant role in the high-speed properties of quantum well lasers. Carrier transport effects, in addition to bandfilling, affect a wide range of static and dynamic properties of the quantum well lasers. This paper will present an overview of our present understanding of the carrier transport processes and their effects in quantum well lasers.     

Time-dependent electron transport through an Aharonov–Bohm ring embedded with two quantum dots

The time-dependent electron transport through an Aharonov–Bohm ring embedded with two quantum dots in the presence of external microwave (MW) fields are investigated theoretically by using the nonequilibrium Green's function method. Whether the MW field can induce or suppress the Fano resonance depends on the part to which the field is applied. When the MW field is applied only to the two quantum dots, the photon-assisted Fano peaks appear at the sidebands of the original Fano peak. The existence of the original Fano peak or the photon-assisted ones can be controlled by the field strength. When the MW field is applied only to one lead, the original Fano peak is suppressed by the MW field, and the negative current caused by the electron–photon pump effects is found.     

Time-dependent transport through a quantum dot with the over-dot (bridge) additional tunneling channel

The time-dependent electron transport through a quantum dot with the additional over-dot (bridge) tunneling channel within the evolution operator technique has been studied. The microwave field applied to the leads and quantum dot has been considered and influence of the time-dependent shift of corresponding energy levels on the quantum dot charge and current flowing in the system, its time-averaged values and derivatives of the average current with respect to the gate and source–drain bias voltages have been investigated. The influence of the over-dot tunneling channel on the photon-assisted tunneling has been also studied.     

Field-assisted spin-polarized electron transport through a single quantum well with spin-orbit coupling

We have investigated theoretically the field-driven electron transport through a single-quantum-well semiconductor heterostructure with spin-orbit coupling.The splitting of the asymmetric Fano-type resonance peaks due to the Dresselhaus spin-orbit coupling is found to be highly sensitive to the direction of the incident electron.The splitting of the Fano-type resonance induces the spin-polarization dependent electron current.The location and the line shape of the Fano-type resonance can be controlled by adjusting the energy and the direction of the incident electron,the oscillation frequency,and the amplitude of the external field.These interesting features may be used to devise tunable spin filters and realize pure spin transmission currents.     

Quantum transport in quantum well infrared photodetectors in the tunneling regime

Quantum well infrared photodetectors (QWIP) are good candidates for low photon flux detection in the 12–20 μm range. For particularly low incident power applications, it can be interesting to reduce the operating temperature to reach the ultimate performance of the QWIP (low dark current, low noise, high detectivity). Nevertheless, once the QWIP operates in the tunneling regime, the dark current is no longer improved by reducing the temperature. Thus, further improvement of the performance needs a microscopic understanding of the physical phenomena involved in QWIP operation in the tunneling regime. In this paper we focus on the dark current of QWIP operated at very low temperature (4–20 K). Experimental results obtained on a 14.5 μm peaking device revealed a plateau regime in the IV curves. We first modeled the dark current using the WKB approximation, but it failed to reproduce the shape and order of magnitude of the phenomenon. As an improvement, we developed a scattering formalism. Our model includes all the most common interactions observed in GaAs: optical phonon, acoustical phonon, alloy disorder, interface roughness, interaction with ionized impurities and between carriers. We demonstrate that, as far as the tunneling regime is concerned, the dominant interaction is the one between electron and ionized impurities, which allows us to conclude on the influence of the doping profile on the dark current.     

Nonlinear transport properties of quantum dots

The influence of excited levels on nonlinear transport properties of a quantum dot weakly coupled to leads is studied using a master-equation approach. A charging model for the dot is compared with a quantum mechanical model for interacting electrons. The currentvoltage curve shows Coulomb lockade and additional finestructure that is related to the excited states of the correlated electrons. Unequal coupling to the leads causes asymmetric conductance peaks. Negative differential conductances are predicted due to the existence of excited states with different spins.