Density functional theory of transition metal phthalocyanines,II: electronic structure of MnPc and FePc—symmetry and symmetry breaking

We present a two-part systematic density functional theory (DFT) study of the electronic structure of selected transition metal phthalocyanines. We use a semi-local generalized gradient approximation (GGA) functional, as well as several hybrid exchange-correlation functionals, and compare the results to experimental photoemission data. Here, we study the intermediate spin systems MnPc and FePc. We show that DFT calculations of these systems are extremely sensitive to the choice of functional and basis set with respect to the obtained electronic configuration and to symmetry breaking. Interestingly, all simulated spectra are in good agreement with experiment despite the differences in the underlying electronic configurations.     

Density functional theory of transition metal phthalocyanines,I: electronic structure of NiPc and CoPc—self-interaction effects

We present a two-part systematic density functional theory study of the electronic structure of selected transition metal phthalocyanines. We use a semi-local generalized gradient approximation (GGA) functional, as well as several hybrid exchange-correlation functionals, and compare the results to experimental photoemission data. Here, we study the low-spin systems NiPc and CoPc. We show that hybrid functionals provide computed photoemission spectra in excellent agreement with experimental data, whereas the GGA functional fails qualitatively. This failure is primarily because of under-binding of localized orbitals due to self-interaction errors.     

Electronic structure of bis(benzo)pentathienoacene in gas and solid phase: ultraviolet photoemission spectroscopy and energy band calculation

Ultraviolet photoemission spectroscopic measurements of bis (benzo)pentathienoacene were carried out in gas and solid phase. For the measurements of solid phase, vacuum deposited films in both amorphous and crystalline phase were prepared on different substrates of HOPG and polycrystalline Au, respectively. The adiabatic ionization energies were determined to be 6.8₄, 5.3₂, and 5.0₈ eV, for gas, amorphous, and crystalline phases, respectively. The spectral lineshapes were interpreted with the aid of the density functional calculations for both isolated molecule and single-crystal structure. The calculated electronic structures were further analyzed in terms of the energy band dispersion and the transport properties of charge carriers.     

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm²/V s was achieved, which is comparable to that of single-crystal CuPc devices (0.1–1 cm²/V s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed.     

Spatially resolved photoresponse measurements on pentacene thin-film transistors

A confocal setup with a spatial resolution in the submicron regime is employed for investigating the response of pentacene transistors to local illumination. The transistors show enhanced and inhomogeneous photoresponse in the proximity of the hole-injecting contact. These inhomogeneities represent contact areas of varying injection efficiency. Thus, this technique allows imaging of contact efficiencies with submicron resolution over large areas up to hundreds of microns. Drift–diffusion simulations including a photogeneration/recombination process have been performed to model the photoresponse. The simulations illustrate that the potential drop along the channel is dramatically reduced in the illuminated area due to photoconductance (i.e. photoinjection of excitons and subsequent dissociation). Also, the injection barrier for holes is reduced if the illumination is close to the hole-injecting electrode. The rapid decay of the photoresponse with increasing distance to the positively biased electrode is caused by the limited electron mean free path in our devices.     

Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment

Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ionbeam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance-voltage and current-voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.     

Electronic structure and self-assembling processes in platinum metalloporphyrins: photoemission and AFM studies

The main goal of this paper is to investigate the electronic structure of valence band and core levels as well as surface topography of pristine tetraphenylporphyrin and Pt-based compounds Pt-TPP(p-COOH₃)₄, Pt-TPP(m-OCH₃)₄, PtCl₂-TPP(m-OCH₃)₄ thin films. The electronic structure of various Pt-based metalloporphyrins which were investigated in dependence on their chemical structure and spectra were measured by high-resolution X-ray photoelectron spectroscopy (XPS) of valence band and Pt4f, Pt4d, C1s, O1s, N1s core levels. Results of atomic force microscopy (AFM) studies of topography and self-assembling processes in thin films of porphyrines are presented and discussed.     

Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries

Vertical electrical conduction in Au/(polycrystal-line pentacene)/Al diode structures and the influence of the kinetic energy of incident Au atoms on the conduction property have been comprehensively studied using current–voltage–temperature (I–V–T) measurements, ultraviolet photoelectron spectroscopy (UPS), atomic-force-microscope (AFM) current imaging, etc. In the I–V characteristics, a symmetrical ohmic current component appeared when a low voltage was applied, and a super-linear one appeared when a high positive voltage was applied to Au. The component in the high-forward-voltage region was concluded to be a thermionic emission of holes from Au with a 0.23-eV injection barrier, which is the normal hole conduction through the highest occupied molecular orbital of pentacene. On the other hand, the ohmic component was concluded to be a metal-like electron transport through high-density gap states at grain boundaries which were induced by the Au penetration into pentacene. UPS and I–V–T measurements clearly indicated the generation of the gap states and the enhancement of their density by the reduction of Au kinetic energy. For vertical-type devices with polycrystalline organic films, the ohmic conduction through the grain boundary will increase the leakage current. On the contrary, it possibly enhances the carrier injection in lateral-type transistors in the case of top-contact configuration.     

Electronic and structural properties of graphene-based transparent and conductive thin film electrodes

We demonstrate that graphene-based transparent and conductive thin films (GTCFs), fabricated by thermal reduction of graphite oxide, have very similar electronic and structural properties as highly oriented pyrolytic graphite (HOPG). Electron spectroscopy results suggest that the GTCFs are also semi-metallic and that the individual graphene sheets of the film are predominantly oriented parallel to the substrate plane. These films may therefore be considered as a technologically relevant analogue to HOPG electrodes, which cannot be easily processed into thin films.     

Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy

P-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyanina-tocopper (F₁₆CuPc) polycrystalline films were investigated by Kelvin probe force microscopy (KPFM). Topographic and corresponding surface potential images are obtained simultaneously. Surface potential images are related with the local work function of crystalline facets and potential barriers at the grain boundaries (GBs) in organic semiconductors. Based on the spatial distribution of surface potential at GBs, donor- and acceptor-like trapping states in the grain boundaries (GBs) of p-CuPc and n-F₁₆CuPc films are confirmed respectively. In view of spatial energy spectrum in micro-scale provided by KPFM, it is going to be a powerful tool to characterize the local electronic properties of organic semiconductors.     

Control of electrical resistance of TiO2 films by short-pulse laser irradiation

Titanium dioxide (TiO₂) films were irradiated with a femtosecond laser beam to alter their electrical resistances. The TiO₂ film was produced by aerosol beam deposition. The wavelength, pulse duration, and repetition rate of the femtosecond laser scanned across the sample surface were 800 nm, 100 fs, and 1 kHz, respectively. By attenuating the laser fluence on the TiO₂ film, a range was found in which the electrical resistance of the TiO₂ film was varied even though the morphology of the film surface was not changed.     

Electronic structure of thin film iron-tetracyanoethylene: Fe(TCNE)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Thin film iron-tetracyanoethylene Fe(TCNE) _x , x∼2, as determined by photoelectron spectroscopy, was grown in situ under ultra-high vacuum conditions using a recently developed physical vapor deposition-based technique for fabrication of oxygen- and precursor-free organic-based molecular magnets. Photoelectron spectroscopy results show no spurious trace elements in the films, and the iron is of Fe²⁺ valency. The highest occupied molecular orbital of Fe(TCNE) _x is located at ∼1.7 eV vs. Fermi level and is derived mainly from the TCNE⁻ singly occupied molecular orbital according to photoelectron spectroscopy and resonant photoelectron spectroscopy results. The Fe(3d)-derived states appear at higher binding energy, ∼4.5 eV, which is in contrast to V(TCNE)₂ where the highest occupied molecular orbital is mainly derived from V(3d) states. Fitting ligand field multiplet and charge transfer multiplet calculations to the Fe L-edge near edge X-ray absorption fine structure spectrum yields a high-spin Fe²⁺ (3d⁶) configuration with a crystal field parameter 10Dq∼0.6 eV for the Fe(TCNE) _x system. We propose that the significantly weaker Fe-TCNE ligand interaction as compared to the room temperature magnet V(TCNE)₂ (10Dq∼2.3 eV) is a strongly contributing factor to the substantially lower magnetic ordering temperature (T _C ) seen for Fe(TCNE) _x -type magnets.     

Charge transfer and polarization screening in organic thin films: phthalocyanines on Au(100)

Core hole screening effects at organic/metal interfaces were studied by core level X-ray photoemission spectroscopy (XPS), X-ray excited Auger electron spectroscopy (XAES), and valence band ultraviolet photoemission spectroscopy (UPS). The comparison of energetic shifts in XPS and XAES enables the estimation of electronic relaxation energy (screening ability). Magnesium phthalocyanine (MgPc) and zinc phthalocyanine (ZnPc) evaporated on single crystalline Au(100) were used as model molecules. Two different features in the Mg KLL spectra can be clearly separated for (sub-)monolayer coverages, while only minor changes of the shape of Mg 1s are observed. Applying a dielectric continuum model, the major screening mechanism cannot be described sufficiently by polarization screening due to mirror charges, significant contributions by charge transfer screening have to be considered. In contrast, small screening effects in the bulk material can be explained by surface polarization.     

Determination of electron affinity of electron accepting molecules

The unoccupied π ^* states of the solid film of electron accepting organic molecules, 7,7,8,8-tetracyanoquinodimethane (TCNQ), fluorinated TCNQ derivatives, 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TNAP), C₆₀, and 6,6-phenyl-C₆₁-butyric acid methyl ester (PCBM) have been studied by inverse photoemission spectroscopy. The assignment of the π ^* affinity levels of these typical electron accepting molecules provides the basic information for the organic electronics and the new electronic functional molecular design. The comparison with density functional theory calculations enables understanding how the electron affinity evolves in terms of molecular orbitals. The correlation between the film morphology and the irradiation damage on the TCNQ derivative samples by electron impact during the inverse photoemission measurements is also discussed.     

Organic heterojunctions of layered perylene and phthalocyanine dyes: characterization with UV-photoelectron spectroscopy and luminescence quenching

We present here the characterization of organic/organic′ heterojunctions created from either of two perylene dyes, perylenetetracarboxylicdianhydride (PTCDA) or the bisimide derivative perylenetetracarboxylicdianhydride-N,N′-bis (butyl)imide (C4-PTCDI), and two chloro-metallated donor phthalocyanines (ClAlPc or ClInPc). The perylene dyes were selected to create thin films with the core of the perylene dye parallel to the substrate plane (PTCDA) or nearly vertical to the substrate plane, with layer planes defined by the butyl substituents (C4-PTCDI). We compare the frontier orbital offsets revealed by UV-photoelectron spectroscopy, and quenching of luminescence of the perylene dyes, as a function of Pc coverage. The ionization potentials (IPs) of the Pc layers, the degree to which interface dipoles are formed at the Pc/perylene dye interface, and the degree of quenching of the perylene luminescence are affected by the structure of the Pc/perylene interface. Pc/PTCDA heterojunctions show significant interface dipoles and higher IPs for the first-deposited Pc layers compared to Pc/C4-PTCDI heterojunctions, which show negligible interface dipoles and lower overall IP values for initial Pc layers. Luminescence of the selectively excited perylene layers is quenched by the addition of even submonolayer coverages of Pc. This quenching process occurs as a result of both energy transfer (perylene to Pc) and charge transfer (Pc to perylene). Luminescence from monomeric and aggregated ClAlPc and ClInPc monolayers is seen on C4-PTCDI films, whereas only luminescence from the aggregated forms of these Pcs is seen on PTCDA films. These studies reveal aspects of organic heterojunction energetics which may have important implications for organic solar cell design.     

Low voltage operating OFETs based on solution-processed metal phthalocyanines

The class of sodium salts of sulphonated metal phthalocyanines (MePCS _x , S = SO₃Na, x=1–4) was investigated as a p-type channel component in organic field-effect transistors (OFETs). The solubility of these materials appears to be enhanced compared to their non-sulphonated counterparts (MePCs). We fabricated transistors based on MePCS _x varying the central metal atom (Me = Ni, Co, Zn, Al) and we evaluated the dependence of transistor performance on the nature of the central atom and the degree of sulphonation. The best results were obtained in the case of Ni and low sulphur content. In this case the mobility value is μ=1.08 cm² V⁻¹ s⁻¹ and the on/off current ratio ∼10³. The degree of sulphonation affects the electric field inside the active film in a way analogous to the case of polyelectrolyte-gated OFETs. The Na⁺ counter ions present in the channel contribute to the device characteristics but their concentration should be controlled in order to optimize device performance.     

SBN thin films growth by RF plasma beam assisted pulsed laser deposition

SBN thin films were grown on MgO and Silicon substrates by PLD and RF-PLD (radiofrequency assisted PLD) starting from single crystal Sr_0.6Ba_0.4Nb₂O₆ and ceramic Sr_0.5Ba_0.5Nb₂O₆ stoichiometric targets. Morphological and structural analyses were performed on the SBN layers by AFM and XRD and optical properties were measured by spectroellipsometry. The films composition was determined by Rutherford Backscattering Spectrometry. The best set of experimental conditions for obtaining crystalline, c-axis preferential texture and with dominant 31° in-plane orientation relative to the MgO (100) axis is identified.     

Dipoles and band alignment for benzene/Au(111) and C<Subscript>60</Subscript>/Au(111) interfaces

A local orbital DFT-approach combined with a “scissor”-operator is used to obtain the Charge Neutrality Level and the screening parameter in the benzene/Au(111) and C₆₀/Au(111) interfaces. The “pillow” dipole and interface Fermi level are also calculated. The total dipole induced across the interface is compared with the experimental evidences: while the agreement for C₆₀/Au(111) is excellent, for benzene/Au(111), some discrepancies appear that are discussed in the light of other models.     

Electrical properties of boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser ablation

We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature. Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed.