超细红色荧光粉LaMgAl_(11)O_(19):Eu~(3+)的制备与发光性能

采用凝胶-燃烧法制备了稀土Eu3+掺杂的LaMgAl11O19红色荧光粉的前驱粉末,在低于700℃退火处理时,得到非晶态样品,而高于850℃退火处理后为单一六方相结构LaMgAl11O19:Eu3+样品.SEM结果表明,该法制备的样品为颗粒分布均匀,粒径在200～400nm之间的超细粉末.通过激发光谱和发射光谱研究了Eu3+在LaMgAl11O19基质中的发光性能,结果显示,非晶态和晶态La1-xMgAl11O19:xEu3+样品都可发光,在613nm波长光的监测下所得荧光粉的激发光谱为一宽带和系列锐峰,其最强激发峰出现在蓝光465nm处,次强峰为394nm,表明该荧光粉与广泛使用的紫外和蓝光LED芯片的输出波长相匹配.在465nm波长光的激发下观察到超细LaMgAl11O19粉末中Eu3+的613nm(5D0→7F2)强的特征发射,且随着粉末逐渐成相5D0→7F2跃迁明显增强,说明LaMgAl11O19:Eu3+超细粉末可作为白光LED的红色补偿荧光粉.     

稀土Y2-xSiO5∶Eux3+纳米发光材料结构对发光性能影响及发光机理研究

用溶胶凝胶法合成了Y_2-xSiO₅∶Eu_x纳米发光材料，使用XRD、FTIR和TEM对其结构进行了表征。讨论了相结构、煅烧温度和Eu³⁺掺杂浓度对材料发光性能的影响及规律。结果显示煅烧温度在900 ℃以下，材料主要呈非晶相结构，900 ℃以上材料主要呈晶态结构；颗粒随煅烧温度升高而增大，在非晶态时颗粒大小在15～45 nm，在晶态时颗粒大小为60～80 nm。激发光谱和荧光发射光谱受材料晶相结构以及Eu³⁺掺杂浓度的影响，在晶态结构中Y_2-xSiO₅∶Eu_x纳米材料呈现更精细的激发和发射光谱。在激发光谱中，电荷转移态吸收(CST)随煅烧温度升高呈现兰移现象，晶态时CST同非晶态相比明显红移；在发射光谱中，非晶态时 ⁵D₀→ ⁷F₂跃迁呈现强的发光峰，随材料制备温度升高而增强，在晶态时该发光峰强度减弱，在长波波段呈现两个新的发光尖峰，并随煅烧温度升高而增强； ⁵D₀→ ⁷F₁发射峰从非晶态转变为晶态后，光谱裂分为三重尖峰；而 ⁵D₀→ ⁷F₀跃迁发光光谱受结构和颗粒大小影响较小。同时在60～80 nm的Y_2-xSiO₅∶Eu_x晶体中，发现材料 ⁵D₀→ ⁷F₂和 ⁵D₀→ ⁷F₁跃迁发光强度，均受Eu³⁺掺杂浓度的影响，当掺杂浓度x=0.4时，材料发光强度最大。     

铕掺杂硅钛柱撑蒙脱土的合成及发光性能研究

采用溶胶凝胶法制备了Eu3+掺杂的硅钛柱撑蒙脱土(Si-Ti-MT),运用XRD,SEM-EDX和FT-IR对其结构进行了表征。结果表明,Eu3+掺杂的硅钛柱撑剂插入蒙脱土层之间,保持了蒙脱土层状结构。经荧光发射光谱和激发光谱分析可知,Si-Ti-MT是Eu3+发光的有效基体,其发射能级主要为Eu3+613 nm(5D0→7F2);激发光谱中表现了Eu3+的5个特征激发带,分别为363 nm(7F0→5D4),382 nm(7F0→5G2),395 nm(7F0→5L6),415 nm(7F0→5D1)和465 nm(7F0→5D2);热处理促进了Eu3+掺杂的硅钛柱撑蒙脱土的发光,且样品的荧光强度随着Eu3+掺杂量的增加而增强,不会发生浓度猝灭现象。     

溶胶-凝胶法制备掺Eu3+的SiO2玻璃的结构及发光性

利用溶胶-凝胶技术制备了掺不同量Eu3+和不同退火温度下的SiO2凝胶和玻璃,通过在不同退火温度下样品的激发光谱、发射光谱、红外光谱和差热-热重曲线,研究了掺Eu3+的SiO2玻璃材料的结构和发光性能。结果显示当Eu3+的掺杂量大于1.86%（质量分数）,Eu3+的发光强度趋于稳定,当样品的退火温度大于300℃时,SiO2凝胶玻璃中吸附的水已基本除净,此时显示出Eu3+的特征发射光谱,谱带位置分别是614,596,588,577nm,分别归属于5D0-7F2,5D0-7F1,5D0-7F0跃迁,对应的激发光谱显示6个峰,位置分别是318,362,380,393,412,462nm,说明300～500℃是凝胶向玻璃转变的关键温度,而水对Eu3+的发光有强烈的淬灭作用。     

Tb3+在燃烧法制备的CaLaAl3O7粉体中的发光性能

采用柠檬酸燃烧法制备了稀土TB3 掺杂的CaLa1-xAl3O7:xTb3 发光材料的前驱粉末,在低于700℃退火处理时,得到非晶态样品,而高于800℃退火处理后为纯相的CaLa1-xAl3O7:xTb3 粉末样品.通过三维荧光光谱、激发光谱和发射光谱研究了Tb3 在CaLaAl3O7基质中的发光性能及Tb3 掺杂量、退火温度和柠檬酸与金属离子的配比等对发光强度的影响.结果显示.非晶态和晶态CaLa1-xAl3O7:xTb3 品都可发光,在240 nm波长光的激发下,CaLaAl3O7:Tb3 粉体产生Tb3 的特征发射峰,归属于5D4-7FJ(J=6,5,4,3)跃迁,主发射峰位置均在543 nm处(5D4-7F5跃迁),随着粉末逐渐成相5D4-7F5跃迁明显增强.     

Ca_2Y_8(SiO_4)_6O_2∶RE(RE=Eu,Tb)发光薄膜的制备及发光性能的研究

采用溶胶 凝胶法制备了稀土离子掺杂 (Eu3 ,Tb3 )的氧磷灰石三元稀土硅酸盐Ca2 Y8(SiO4 ) 6 O2 发光薄膜。通过X射线衍射 (XRD) ,红外光谱 (IR) ,扫描电镜 (SEM)等方法对薄膜的组成、结构、颗粒尺寸、形貌及厚度进行了研究 ,通过发光光谱对薄膜的发光性质进行了分析。XRD结果表明 70 0℃时薄膜尚处于非晶态 ,80 0℃时已开始有Ca2 Y8(SiO4 ) 6 O2 的物相形成 ,10 0 0℃时结晶已完全。这一点和红外光谱的结果相符。发光光谱测试表明Ca2 Y8(SiO4 ) 6 O2 ∶Eu3 薄膜显示了很强的红光发射 ,并以Eu3 的5D0 -7F2 (616nm)超灵敏跃迁为最强一组。Ca2 Y8(SiO4 ) 6 O2 ∶Tb3 的发射光谱由蓝光发射和绿光发射两部分组成 ,前者对应于5D3-7FJ,后者对应于5D4 -7FJ(J =6,5 ,4,3 ) ,且以5D4 -7F5(5 44nm)绿光发射为最强。     

一种可用于白光LED的硅酸盐红光荧光粉发光特性的研究

采用固相合成法制备了成分为M1-xSiO3:xEu3+(M=Mg,Ca,Sr,Ba)的红光荧光粉.测量了它们的激发光谱和发射光谱.它们均发射红光,可用于近紫外和蓝光LED芯片,与其他荧光粉一起封装白光LED 以调节显示指数和色温等参数.BaSiO3:Eu3+在室温下发射的主峰波长是613 nm的红光,激发峰值在393和464 nm,可用于调节基于近紫外或者蓝光芯片的白光LED的显色指数.用高斯曲线对它的发射光谱进行了拟合,分析了它的能级跃迁的情况.结果发现,BaSiO3:Eu3+的发射峰是由5D0→7F0(583.04 nm),5D0→7F1(592 nm),5D0→7F2(612.15和620.79 nm),5D0→7F3(650.55 nm)和5D0→7F4(688.5和701.5 nm)跃迁得到的.用两个高斯函数拟合5D0→7F2和5D0→47的发射峰可以得到更合理的结果,并且5D0→70和5D0→7F1这两个能级跃迁的发射峰叠加在一起只能观察到一个峰值.     

LED用Sr_((1-1.5x))Mo_(0.8)Si_(0.2)O_(3.8)∶Eu_x~(3+)红色荧光粉的制备及其荧光性能

通过高温固相法合成了LED用红色荧光粉Sr(1-1.5x)Mo0.8Si0.2O3.8∶Eu3x+(x=0.1,0.2,0.3,0.4,0.5)。通过XRD、激发光谱和发射光谱测试了材料的物相组成以及发光性能。x=0.1样品的XRD谱与JCPDS 08-0482(SrMoO4)的标准卡片相同。Eu3+代替晶格中Sr2+的位置成为发光中心。随着Eu3+含量x的增加,593 nm处的5D0-7F1跃迁和614 nm处的5D0-7F2跃迁发射强度会相互转换:当x≤0.4时,以磁偶极5D0-7F1跃迁为主,发射橙色光;而当x=0.5时,以电偶极5D0-7F2跃迁发射为主,发射红光。可能是过量掺杂的Eu3+离子,只能存在于晶格空位形成缺陷,无法占据SrMoO4中Sr2+的格位中,Eu3+在晶格中占据非对称中心的格位,导致电偶极跃迁变成允许跃迁,从而增加了5D0-7F2跃迁,减弱了5D0-7F1跃迁。因此,可以通过调节激活剂的含量获得不同发光色的荧光粉。Eu3+掺杂的硅钼酸锶体系,614 nm激发下,在368 nm处出现宽的基质吸收峰和467 nm处7 F0-5 D2的跃迁峰,且这2处的吸收峰在x=0.5时比x=0.4时...     

(ZnBaLa)BO3∶Eu3+的合成与发光的研究

高温固相扩散法合成了发光材料Zn1．5xBa1．5yLa1-x-y-z)BO3∶Eu3+z(x+y+z＜0．4)．对样品进行了XRD和IR分析,结果表明：在空气中900 ℃条件下,合成了荧光体样品,LaBO3中La3+离子被部分Zn2+和Ba2+离子取代使晶系发生了变化,LaBO3属于正交晶系,而(Zn0．27Ba0．24La0．61)BO3∶Eu3+0．05经过XRD属于立方晶系,a=0.639 7,V=0.261 8 nm3．扫描电镜测其晶貌,平均粒度为22 μm左右．样品的激发光谱和发射光谱显示：在基质BO3结构中O2—Eu3+的CT带位于295 nm,Eu3+的强发射来自5D0→7F1和5D0→7F2跃迁,存在磁偶极和电偶极两种跃迁．     

GdF_3∶Eu~(3+)/NaGdF_4∶Eu~(3+)纳米晶的水热合成及发光性质

采用水热法,以聚乙二醇(400)为分散剂,以NaOH和HNO3溶液调节初始溶液pH值,合成GdF3∶Eu3+和NaGdF4∶Eu3+纳米晶。XRD和SEM结果表明:在酸性溶液(pH=3,5)、中性溶液(pH=7)和碱性溶液(pH=9)中,分别获得具有正交结构的GdF3∶Eu3+纳米晶,GdF3∶Eu3+和NaGdF4∶Eu3+混合晶,六方结构NaGdF4∶Eu3+棒状微米晶。根据Scherrer公式估算pH=3和pH=5时制备纳米晶的一次性粒径分别为49和28 nm。样品的发射光谱结果表明:特征发射峰来自于5D2、5D1、5D0到7FJ跃迁。在主晶相为GdF3样品中,主发射峰来自于Eu3+的5D0→7F1的磁偶极跃迁;晶相为NaGdF4样品的主发射峰来自于Eu3+的5D0→7F2电偶极跃迁。5D0→7F1和5D0→7F2跃迁发射相对强度比值显示:Eu3+在NaGdF4晶体中的格位对称性下降。激发光谱显示出Gd3+和Eu3+具有较好的能量传递。     

Red‐Emitting Dendritic Iridium(III) Complexes for Solution Processable Phosphorescent Organic Light‐Emitting Diodes

Functionalization of a red phosphorescent iridium(III) complex core surrounded by rigid polyphenylene dendrons with a hole‐transporting triphenylamine surface allows to prevent the intermolecular aggregation‐induced emission quenching, improves charge recombination, and therefore enhances photo‐ and electroluminescence efficiencies of dendrimer in solid state. These multifunctional shape‐persistent dendrimers provide a new pathway to design highly efficient solution processable materials for phosphorescent organic light‐emitting diodes (PhOLEDs).     

Deep Red to Near‐Infrared Emitting Rhenium(I) Complexes: Synthesis,Characterization, Electrochemistry,Photophysics, and Electroluminescence Studies

A series of triarylamine‐containing tricarbonyl rhenium(I) complexes, [BrRe(CO)₃(N^N)] (N^N=5,5′‐bis(N,N‐diaryl‐4‐[ethen‐1‐yl]‐aniline)‐2,2′‐bipyridine), has been designed and synthesized by introducing a rhenium(I) metal center into a donor‐π‐acceptor‐π‐donor structure. All of the complexes showed an intense broad structureless emission band in dichloromethane at around 680–708 nm, which originated from an excited state of intraligand charge transfer (³ILCT) character from the triarylamine to the bipyridine moiety. Upon introduction of the bulky and electron‐donating pentaphenylbenzene units attached to the aniline groups, the emission bands were found to be red shifted. The nanosecond transient absorption spectra of two selected complexes were studied, which were suggestive of the formation of an initial charge‐separated state. Computational studies have been performed to provide further insight into the origin of the absorption and emission. One of the rhenium(I) complexes has been utilized in the fabrication of organic light‐emitting diodes (OLEDs), representing the first example of the realization of deep red to near‐infrared rhenium(I)‐based OLEDs with an emission extending up to 800 nm.     

稀土铽配合物的有机发光二极管

有机小分子和有机高分子的发光二极管在可见光区内有非常高的量子效率，因而受到人们的高度重视．采用二胶（TPD），8羟基喹啉铝（Alq3）等有机小分子作为空穴和电子输运层所作的发光二极管[1]的量子效率可达10％，采用聚对苯乙炔（PPV）高分子聚合物作空穴输运层，有机小分子2     

Emitting stability of poly（9,9-dialkylfluorene-co-N-butylcarbazole） by solid-state oxidative coupling polymerization

Dihexylfluorene and N-butylcarbazole were copolymerized by solid-state oxidative coupling polymerization in the presence of anhydrous FeCl_3 at room temperature.The solid-state films of the copolymers emitted blue light after heating at 150℃in air for 24 h,no red-shifted emission was observed by fluorescence spectroscopy.     

Performance Improvement of Organic Light Emitting Diodes Using Poly(N-vinylcarbazole) (PVK) as a Blocking Layer

High efficiency organic light‐emitting‐devices (OLED) have been fabricated by incorporation of a polymeric layer as a controller of the unbalanced charge. In device configuration of ITO/PEDOT:PSS/PVK/Alq₃/LiF:Al, poly(N‐vinylcarbazole) (PVK) was selected as a block‐ing layer (BL) because it has a hole transporting property and a higher band gap, especially a lower LUMO level than the emitting layer (Alq₃) and a higher HOMO level than the hole injection layer (PEDOT: PSS). As a result, the optimal structure with this bl layer showed a peak efficiency of 6.89 cd/A and 2.30 lm/W compared to the device without the PVK layer of 1.08 cd/A, 0.27 lm/W. This result shows that the PVK layer could effec‐tively block the electrons from metal cathode and confine them in the emitting layer and accomplish the charge balance, which leads to enhanced hole‐electron balance for achieving high recombination efficiency.     

Structural,Electronic and Optical Properties of Multifunctional Iridium(III) and Platinum(II) Metallophosphors for Organic Light‐Emitting Diodes

An elaborated theoretical investigation on the optical and electronic properties of three fluorene‐based platinum(II) and iridium(III) cyclometalated complexes Pt‐a , Ir‐a and Ir‐b is reported. The geometric and electronic structures of the complexes in the ground state are studied with density functional theory and Hartree Fock approaches, while the lowest triplet excited states are optimized by singles configuration interaction (CIS) methods. At the time‐dependent density functional theory (TD‐DFT) level, molecular absorption and emission properties were calculated on the basis of optimized ground‐ and excited‐state geometries, respectively. The computational results show that the appearance of triphenylamino (TPA) moiety at the 9‐position of fluorene ring favors the hole‐creation and leads to red‐shifts of absorption and emission spectra. Moreover, Pt‐a and Ir‐b are nice hole‐transporting materials whereas Ir‐a has good charge‐transfer balance, which render them useful for the realization of efficient OLEDs (Organic Light‐Emitting Diodes).