Phase composition-dependent physical and mechanical properties of YbxZr1−xO2−x/2 solid solutions

The paper represents a detailed insight into the correlation between changes of the phase composition of crystalline Yb_xZr_1−xO_2−x/2 solid solutions and their structural, electrical, mechanical and optical properties. Particularly, the effect of the crystal growth conditions and stabilizer amount in the range of 1.5–13.8 mol% of Yb₂O₃ are studied in terms of Rietveld analysis of powder X-ray diffraction data, electrical conductivity measured by impedance spectroscopy, absorption coefficient and refractive index measurements, Vickers microhardness (classical technique) as well as the plastic microhardness and effective elastic modulus (DSI—depth-sensing indentation technique). Potential applications of the investigated systems are discussed in view of the results obtained.     

Study on the local structure of (CrO6) complex in garnet crystals by optical and EPR spectrum

The local lattice structure distortions for YAG and YGG systems doped with Cr³⁺ have been investigated by the d³ configuration complete energy matrices which contain the Zeeman energy besides the electron–electron interaction, the trigonal crystal field as well as the spin–orbit coupling interaction. The local lattice structure parameters R and θ of (CrO₆)⁹⁻ complex are determined for Cr³⁺ in YAG and YGG systems, respectively. The calculated results show that the local lattice structures have expansion distortions, which almost tend to the same after distortions. Meanwhile, the EPR parameter D, g factors (g_||, g) and optical spectrum of these systems have been interpreted uniformly by quantitative calculation. It is shown that the effect of the orbit reduction factor k on g factors (g_||, g) cannot be ignored.     

Understanding as well as characterization of erratic interspike dynamics in semiconductor devices

The understanding of the origin of electronic noise would be very important in semiconductor devices. Detecting time characteristics via statistical approaches has been known to be useful in complex systems. In this study, the ensemble Monte Carlo particle method is used to simulate electron transport in a layered III-V semiconductor at room temperature. Nonlinear/erratic spiking fluctuations are predominant at the onset of current instabilities. To explore time characteristics detrended fluctuation analysis is used to analyze interspike intervals in different scales. Interestingly, multifractal behaviors are responsible for this kind of electronic noise. Therefore, it indicates that many extra time-characteristic would emerge in semiconductor devices, which would be strongly related to polar optical phonon scattering for intervalley transfer.     

Analysis of thermal expansion coefficients under the effect of high temperature for minerals

A simple and straightforward method for the determination of thermal expansion is investigated and applied for four minerals of geophysical importance. The results obtained for four minerals such as Mg₂SiO₃, Al₂O₃, Grossular garnet and Pyrope garnet at different temperatures are found to be in excellent agreement with the experimental data. The simplicity of the method is discussed in the light of another method in high temperature research on minerals.     

Thermoluminescence mechanism of Mn, Mg and Sr doped calcite

In this work, the thermoluminescence properties of synthetic crystals of doped calcite were studied. Samples were doped with Mn²⁺, Mg²⁺ or Sr²⁺, either individually or simultaneously with more than one of these impurities. TL glow curves, partial heating measurements, isometric curves, emission spectra and thermal treatment were performed, in order to investigate the role played by the impurities in the TL glow peaks of calcite. We conclude that the crystals doped with Mn²⁺ show five TL peaks with emission spectra due only to the Mn²⁺. The relative intensity of these peaks is closely related to the other divalent dopant added in the solution (Sr²⁺ or Mg²⁺). These results suggest that although Sr²⁺ and Mg²⁺ act as TL activators stabilising slightly different electron traps, they are not directly connected to the Mn²⁺ luminescence centre.     

Formability of ABO3 cubic perovskites

In this study, 223 binary oxide systems (of which, 34 systems can form cubic perovskites) are collected to explore the regularity of cubic perovskites formability. It is found that the octahedral factor (r_B/r_O) take the same important role as the tolerance factor (t) to form cubic perovskites in complex oxide system. Regularities governing cubic perovskites formability are obtained by using empirical structure map constructed by these two parameters, on this structure map, sample points representing systems of forming (cubic structure) and non-forming are distributed in distinctively different regions. Prediction criteria for the formability of cubic perovskites are squeezed out, which may be applied to design new substrate or buffer materials with cubic perovskite structure in compound semiconductor epitaxy.     

石墨烯封装单层二硫化钼的热稳定性研究

将单层二硫化钼用石墨烯进行封装,构造了石墨烯和二硫化钼的范德瓦耳斯异质结构,并且分别在氩气（Ar）和氢气（H₂）氛围下,详细研究了被封装的二硫化钼的热稳定性.结果表明：在氩气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直保持稳定,而石墨烯和氧化硅上裸露的二硫化钼在1000℃时几乎全部分解;在氢气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直稳定存在,而石墨烯和氧化硅上裸露的二硫化钼在800℃下已经完全分解.综上可得,在氩气和氢气的氛围下,被石墨烯封装的二硫化钼的热稳定性得到了显著的提高.该研究通过用石墨烯将单层的二硫化钼进行封装以提高其热稳定性,在未来以单层二硫化钼作为基础材料的电子器件中,可以保证其在高温下能够正常工作.该研究也为提高其他二维材料的热稳定性提供了一种可行的方法和思路.     

Non-stoichiometry and properties of ternary semiconductor phases of variable composition based on IV-VI compounds

An overview and analysis of our experimental data on the crystal structure, mechanical, thermal, galvanomagnetic and thermoelectric properties vs composition of the ternary semiconductor phases based on IV-Te compounds in the IV-X-Te systems (IV-Ge, Sn, Pb; X-Cu, Ag, Cd, In, Ga, Bi, Sb, Mn, V) are given. The separate and joint effect of deviation from stoichiometry and cation substitution on the IV-X-Te phase properties is established using the method of ‘controlled atomic defects’. Some general regularities and new physical phenomena connected with simultaneous presence of intrinsic and impurity point defects are detected. The influence of the cation substitution on the intrinsic defect equilibrium is established. It is shown that critical phenomena of percolation nature are observed in the range of small impurity contents as well as small intrinsic defect concentrations. Principally new models of the energy band structure of IV-X-Te ternary phases, which take into consideration a high concentration of non-stoichiometric defects, are proposed. The role of long- and short-range ordering is discussed. The formation of complexes as a result of chemical interaction between impurity and host atoms is detected. The above-mentioned phenomena are common for ternary phases and should be taken into account when developing materials for different applications.     

Two-photon spectroscopy of SnO2 under hydrostatic pressure

The pressure shift of S excitons in the rutile-type semiconductor tin oxide (SnO₂) is measured by two-photon absorption. From these data the pressure coefficients of the band gap (62.0 meV/GPa) and of the exciton binding energy (0.87 meV/GPa) are determined.     

Low-temperature lattice thermal expansion of the II-VI semiconductor ZnSe

The low-temperature lattice thermal expansion of the wide gap semiconductor ZnSe is investigated using the quasi-harmonic theory of thermal expansion. The generalized Grüneisen parameters (GPs) of the elastic waves propagating in different directions with respect to the [001] crystallographic axis are calculated using the second-and third-order elastic constants. The values of the generalized GPs γ_j are generally positive except for γ₂ from θ=25 to 65°. The Brugger gamma is calculated and the low-temperature limit of the Grüneisen gamma is determined using the procedure of Menon and Rao. The low-temperature limit has been obtained as 0.46 for ZnSe. The volume expansion is expected to be positive down to absolute zero for ZnSe, since is positive.     

GaP材料热导率的测量

针对目前用于半导体材料掺杂浓度纵向深度分布测量用的方法，如Ｃ－Ｖ法、电化学法等方法对样品造成的损伤或污染，本文提出一种非接触式的光热法测量技术。并结合室温下光热法测得的实验数据计算了ＧａＰ∶Ｎ多层材料中不同杂质浓度下的热导率，获得热导率随半导体内掺入的杂质浓度增加而减小的关系。这一结果与现有用光热法测量单层结构的半导体材料得到的规律相符合，从而表明了用光热法对层状半导体材料进行掺杂浓度纵向分布测量的可行性；同时还讨论半导体内临近层间结晶程度的差异对光热信号幅度造成的影响。     

Double peak behavior of resistivity curves in Cd doped LaMnO3 perovskite systems

The effect of Cd doping on transport, magnetotransport, and magnetic properties has been investigated in the perovskite La_1−xCd_xMnO₃ (0x0.5) systems. The ρ(T) curves exhibit a sharp metal insulator transition (T_p1), which is close to paramagnetic to ferromagnetic transition (T_c) obtained from M−T curves for all samples. In addition, ρ(T) curves for Cd doped samples exhibit another broad transition (T_P2) below T_p1. This transition becomes more prominent and the transition temperature (T_p2) shifts to lower temperature with increasing Cd content. Such double peak behavior in the ρ(T) curve is attributed to the phase separation between the ferromagnetic metallic phases and the ferromagnetic insulating phases induced by the electronic inhomogeneity in the samples.     

Effect of the optical characteristics of semiconductor resonator structures on the amplitudes of their thermal radiation lines

We investigated, both theoretically and experimentally, the dependence of the intensity of spectral lines of thermal radiation from plane-parallel semiconductor resonator structures on their optical parameters (volume absorption and coefficients of reflection from surfaces). The investigations were performed in the spectral region of absorption by free charge carriers (λ = 3–17 μm). It is shown for such structures that the amplitudes of thermal radiation lines depend non-monotonically on the transmission factor. We determined the optical parameter values for a resonator structure that are optimal when forming comb radiation spectrum. The conditions are found under which the intensity of lines of thermal radiation from a semiconductor plane-parallel layer approaches that of thermal radiation from a blackbody.     

Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics

The polycrystalline sample of LiFe_1/2Ni_1/2VO₄ was prepared by a standard solid-state reaction technique and confirmed by X-ray diffractometry. LiFe_1/2Ni_1/2VO₄ has orthorhombic crystal structure whose dielectric and electric modulus properties were studied over a wide frequency range (100 Hz–1 MHz) at different temperatures (296–623 K) using a complex impedance spectroscopy (CIS) technique. The frequency and temperature dependence of dielectric constant (ε_r) and tangent loss (tan δ) of LiFe_1/2Ni_1/2VO₄ are studied. The variation of ε_r as a function frequency at different temperatures exhibits a dispersive behavior at low frequencies. The variation of the ε_r as a function of temperature at different frequencies shows the dielectric anomaly in ε_r at 498 K with maximum value of dielectric constant 274.49 and 96.86 at 100 kHz and 1 MHz, respectively. Modulus analysis was carried out to understand the mechanism of the electrical transport process, which indicates the non-exponential type of conductivity relaxation in the material. The activation energy calculated from electric modulus spectra is 0.38 eV.     

Dopant patterning in three dimensions during molecular beam epitaxial growth using anin-situfocused ion gun

Conventional molecular beam epitaxial (MBE) growth of III-V semiconductor material systems use a thermal silicon effusion cell as the n-type dopant source. In the technique described here, the thermal source is replaced with a scanning Si focused ion gun. It is therefore possible to directly write dopant patterns into the semiconductor waferit as it is being grown. The precise control over the elemental composition in the growth (z) direction permitted by MBE, combined with high spatial resolution of the focused dopant ion beam in the lateral (xy) plane, allows direct registration of fully integrated, three-dimensional semiconductor structures and devices otherwise unobtainable via conventional lithographic techniques. In this paper, we present electrical measurements of high mobility GaAs/AlGaAs modulation doped heterostructures fabricated using this technique.Fabrication of novel undoped channel FET structures is also discussed, where the dopant beam is used to form extended contacts to the induced electron gas. FET action is demonstrated for the first time using this technique, eliminating the constraint for self-alignment in undoped structures.     

Phase transition in Pb4.9A0.1Ge2.7Si0.3O11 (A=Ca,Sr,Ba) ferroelectrics

Polycrystalline samples of modified lead germanate Pb_4.9A_0.1Ge_2.7Si_0.3O₁₁ (A=Ca,Sr,Ba) have been prepared by solid-state reaction technique. X-ray studies have been carried out to check the formation of single-phase composition and to obtain preliminary structural data. Measurements of dielectric permittivity () and loss (tan δ) have been studied both as a function of frequency (10²–10⁴ Hz) and temperature (room temperature to 180°C). Phase transition was observed in all three cases but with different T_c value. From the plots of conductivity vs. temperature using dielectric data, collected at 10 kHz activation energy was calculated to investigate the conduction mechanism in them.     

高迁移率Ge沟道器件研究进展

高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率, 成为未来互补型金属-氧化物-半导体(CMOS) 器件极有潜力的候选材料. 然而, 对于Ge基MOS器件, 其栅、源漏方面面临的挑战严重影响了Ge基MOS 器件性能的提升, 尤其是Ge NMOS器件. 本文重点分析了Ge基器件在栅、源漏方面面临的问题, 综述了国内外研究者们提出的不同解决方案, 在此基础上提出了新的技术方案. 研究结果为Ge基MOS 器件性能的进一步提升奠定了基础.     

Effect of hot acid etching on the mechanical strength of ground YAG laser elements

High-power pumped Nd:YAG elements may exceed their tensile strength under high thermally induced stress. Providing extra strength to such rods is essential for their employment in high-power lasers. The tensile strength of YAG elements was increased by chemical etching in concentrated phosphoric acid. The highest tensile strength was achieved by etching of fine-ground YAG components: an average for slabs, and for rods, which are 3.6 times and 5 times higher than those of non-etched elements, respectively. The measurements were carried out by four-point flexure strength test. We have established a dependency among the micro-roughness of YAG elements, the surface morphology obtained by etching, and the tensile strength: the tensile strength of the etched element improves for finer after-etch surface texture, which is obtained for finer initial micro-roughness.

To assure the withstanding of Nd:YAG rods under high thermal gradients, a new approach was employed, namely, increasing the pump-power applied to the Nd:YAG rod till fracture. Our results show an increase by more than 2.7 times in tensile strength of etched Nd:YAG rods as compared to standard commercial rods, which corresponds to a thermal loading of excess of 434 W/cm.     

Normal-state transport properties of Ba1−xKxBiO3 crystals

The normal-state transport properties of Ba_1−xK_xBiO₃ crystals with a wide range of potassium compositions (0≤x≤0.62) were studied. Although the host material BaBiO₃ has a monoclinic structure, the system changes from a monoclinic to an orthorhombic structure with a small doping of potassium (0≤x<0.35) and behaves similar to a doped semiconductor, without exhibiting superconductivity. In the composition range, holes are majority carriers in the transport phenomena. When x exceeds a critical value (0.35), the system goes into a cubic superconducting phase with a single metallic band. The vicinity of the critical composition transport phenomena is easy to understand assuming the existence of two conducting channels that are made up of metallic and semiconducting phases. Maximum T_c exceeding 30 K was observed at x0.4, where carrier density was at its maximum. Overdoping with potassium suppresses superconductivity. In the metallic composition of x>0.45, transport seems to correlate with the phonon mode with an energy distribution of 15–43 meV.     

Photoacoustic investigation of the effective diffusivity of two-layer semiconductors

The problem of the effective thermal diffusivity of two-layer systems is investigated using the photoacoustic spectroscopy. The experimental results are examined in terms of the effective thermal parameters of the composite system determined from a homogeneous material that produces the same physical response under an external perturbation in the detector device. It is shown that the effective thermal conductivity is not symmetric under exchange of the two layers of the composite, i.e. the effective thermal parameters depend upon which layer is illuminated in the photoacoustic experiments. Particular emphasis is given to the characterization of the interface thermal conductivity between the layer system.