层数相关黑磷双光子吸收的理论研究

原子层数是对黑磷物理性质宽波段可调谐的重要参量.基于5跳参数连续近似模型,从理论上研究了单层、双层和三层黑磷的双光子吸收系数对原子层数以及入射光偏振方向的依赖性.计算结果表明:黑磷的双光子吸收系数在扶手型方向上比锯齿型方向上大10个数量级,且双光子吸收系数随着层数的增加而增大,并且吸收峰发生红移;双光子吸收系数随入射线...     

石墨烯的三阶非线性和光双稳态调控特性

研究单层石墨烯的三阶非线性和光双稳态效应。通过理论分析和数值模拟,改变单层三阶非线性石墨烯的费米能级、弛豫时间、双光子吸收系数及温度条件,调制单层三阶非线性石墨烯光双稳态的阈值大小。单层三阶非线性石墨烯的费米能级越大,温度越高,则光双稳态的阈值越大;双光子吸收系数越大,双稳态的低阈值越大;弛豫时间和双光子吸收系数会明显地改变石墨烯结构的光透射率,而光透射率则对石墨烯材料自身温度不敏感。该结论可为设计各类微纳结构的光子器件如光开关和光传感等提供理论依据。     

新型多共轭链有机分子双光子吸收特性的理论研究

在密度泛函理论水平上,利用解析响应函数方法研究了以（4-{2-［4-（2-吡啶-4-乙烯基）-苯基］-乙烯基}-苯基）-胺为基本结构单元的单支、双支和三支共轭链有机分子的单光子和双光子吸收特性.计算结果表明,这三种有机分子都具有较大的线性和非线性吸收强度.在紫外-可见光区域,它们的单光子吸收谱都存在两个峰,这与实验结果符合较好.在近红外区域,多共轭链有机分子呈现出宽达300 nm的宽带双光子吸收,单支、双支和三支分子的最大双光子吸收截面比约为1.0∶2.3∶4.0,其中三支分子具有最大的双光子吸收截面101.73×10^-48 cm⁴·s.从理论上进一步证实,增加分子的共轭链可有效提高分子的双光子吸收特性.同时还给出了电荷转移态的电荷迁移过程. 关键词： 双光子吸收 响应函数方法 多共轭链有机分子     

ZnO/ZnS核-壳量子点的双光子吸收效应

利用飞秒激光Z-扫描与泵浦-探测技术,研究了室温下ZnO/ZnS与ZnO/ZnS/Ag核-壳胶体量子点的双光子吸收效应.研究发现:ZnO基核-壳量子点的本征双光子吸收系数比ZnO体材料增大了3个数量级;测量得到的660 nm处的ZnO/ZnS核-壳量子点双光子吸收截面约为4.3×10^-44 cm⁴·s·photon^-1,比相应的ZnS、ZnSe及 CdS量子点大2个数量级;当ZnO/ZnS核-壳量子点镶嵌了银纳米点时,非线性吸收有所增强.ZnO基复合纳米结构的双光子吸收增强可归因于量子限域与局域场效应.     

一种新型有机染料的宽带双光子吸收和光限幅特性的研究

研究了一种新型双共轭链有机染料分子的双光子吸收（TPA）及其光功率限幅特性，实验研究了该有机染料的双光子吸收谱和光功率限幅曲线. 结果证实在浓度为1×10^-2 mol/L的四氢呋喃（THF）溶液中，该有机染料在近红外区有宽达400nm的宽带非线性双光子吸收及光功率限幅特性. 它的双光子吸收谱存在三个峰，分别位于730，850和980nm，并且在850nm处有最大的TPA截面，为σ′₂＝25.9×10^-47　cm^{4·s 关键词： 宽带 双光子吸收 光限幅 双共轭链有机分子}     

双缺陷模一维光子晶体的双光子吸收增强研究

采用真空镀膜工艺制备了具有762 nm和800 nm双缺陷模的含两个CdS缺陷层的TiO2/SiO2一维光子晶体,运用抽运探测技术测量了其双光子吸收。对于两个缺陷模,双光子吸收均得到很大的增强,其中缺陷模为800nm时的双光子吸收系数307 cm/GW要大于缺陷模为762 nm时的116 cm/GW,分别为单层CdS薄膜的48倍和18倍。这种双光子吸收的增强是由于光局域化导致一维光子晶体缺陷层内的电场强度增大而形成的。通过传输矩阵法计算了一维光子晶体的内部场强,发现800 nm波长光入射时缺陷层内的电场强度要大于762 nm波长光入射时的电场强度值。     

旋转双层石墨烯的电子结构

本文将第一性原理和紧束缚方法结合起来, 研究了层间不同旋转角度对双层石墨烯的电子能带结构和态密度的影响. 分析发现, 旋转双层石墨烯具有线性的电子能量色散关系, 但其费米速度随着旋转角度的减小而降低. 进一步研究其电子能带结构发现, 不同旋转角度的双层石墨烯在M点可能会出现大小不同的的带隙, 而这些能隙会增强双层石墨烯的拉曼模强度, 并由拉曼光谱实验所证实. 通过对比双层石墨烯的晶体结构和电子态密度, 发现M点处带隙来自于晶体结构中的“类AB堆垛区”. 关键词： 旋转双层石墨烯 第一性原理 紧束缚 电子结构     

基于光子统计测量的单分子判别

基于标准的Hanbury-Brown-Twiss探测方式下，研究了具有Poisson统计背景的实际单分子光子源与理想双分子系统的光子统计特性，通过比较分析二者在具有相同平均光子数n—时的Mandel参数，研究给出一种利用双光子的统计概率P(2)判别单分子的方法为P(2)<12(2-4-2n—)².同时研究了单分子光子源的信号/背景比对分析结果的影响. 关键词： 单分子 Mandel参数 Poisson分布 信号/背景比     

1，4-二甲氧基-2，5-二乙烯基苯系列衍生物的双光子吸收截面

在HF水平上，利用解析响应函数方法，研究了1，4_二甲氧基_2，5_二乙烯基苯系列衍生物 分子的单光子和双光子吸收特性. 实验测量了反，反_2，5_双(4′_N,N_二丁胺基苯乙烯)_1 ，4_二甲氧基苯分子的单光子和双光子荧光谱. 研究结果表明该系列分子具有较强的双光子 吸收特性. 在低能量范围内，对于D_π-A型分子，分子的单光子吸收强度和双光子吸收截面 最大值都发生在分子的第一激发态. 对于D_π_D型分子，单光子吸收强度最大值出现在分子 的第一激发态，而最大双光子吸收值则对应于分子的第二激发态. 分子的单和双光子吸收强 度和分子官能团的电性有关. 对于由该类π中心部分构成的分子，其对称型不一定比不对称型更有利于提高双光子吸收截面. 分子基态与电荷转移态的电荷转移过程定性地解释了双光 子聚合反应的聚合机理. 关键词： 双光子吸收 响应函数方法 非线性光学     

双光子吸收过程中光场振幅平方压缩

本文由双光子过程主方程运用生成函数法,求得双光子吸收过程光场振幅平方压缩的表示式,讨论振幅平方压缩随无量纲时间τ,入射光场相位角θ及平均光子数|α|²的变化情况。双光子吸收过程是产生振幅平方压缩效应的有效途径。最后论证振幅平方压缩效应的独立性。 关键词：     

Spin—orbit stable dirac nodal line in monolayer B6O

The two-dimensional (2D) materials with nodal line band crossing have been attracting great research interest. However, it remains a challenge to find high-stable nodal line structure in 2D systems. Herein, based on the first-principles calculations and theoretical analysis, we propose that monolayer B₆O possesses symmetry protected Dirac nodal line (DNL) state, with its Fermi velocity of 10⁶ m/s in the same order of magnitude as that of graphene. The origin of DNL fermions is induced by coexistence of time-reversal symmetry and inversion symmetry. A two-band tight-binding model is further given to understand the mechanism of DNL. Considering its robustness against spin—orbit coupling (SOC) and high structural stability, these results suggest monolayer B₆O as a new platform for realizing future high-speed low-dissipation devices.     

Davydov splitting and two-photon excitation of cadmium tungstate (CdWO4) single crystal phosphorescence

Phosphorescence characteristics of CdWO₄ excited by one-photon (λ = 308 nm) and two-photon (λ = 570–590 nm) processes were measured. A Davydov splitting of 120 ± 20 cm⁻¹ was obtained in the phosphorescence spectra, suggesting a diffusion coefficient of about 1.2 × 10⁻² cm² s⁻¹, and a diffusion length of about 3.1 × 10⁻⁴ cm for the room temperature measured lifetime of 8μs. The phosphorescence quantum efficiency was less than 2% at low temperatures (only 0.25% at room temperature), indicating that the dominant decay mechanism was radiationless. The radiative lifetime was thus estimated as 1–2 ms. The two-photon phosphorescence excitation is characterized by an absorption cross-section of the order of 10⁻⁴⁹cm⁴s.     

Ultrafast carrier dynamics of Cu2O thin film induced by two-photon excitation

Cuprous oxide (Cu₂O) has attracted plenty of attention for potential nonlinear photonic applications due to its superior third-order nonlinear optical property such as two-photon absorption. In this paper, we investigated the two-photon excitation induced carrier dynamics of a Cu₂O thin film prepared by radio-frequency magnetron sputtering, using the femtosecond transient absorption experiments. Biexponential dynamics including an ultrafast carrier scattering (< 1 ps) followed by a carrier recombination (> 50 ps) were observed. The time constant of carrier scattering under two-photon excitation is larger than that under one-photon excitation, due to the different transition selection rules and smaller absorption coefficient of the two-photon excitation.     

Orbital electronic heat capacity of hydrogenated monolayer and bilayer graphene

The tight-binding Harrison model and Green's function approach have been utilized in order to investigate the contribution of hybridized orbitals in the electronic density of states(DOS) and electronic heat capacity(EHC) for four hydrogenated structures, including monolayer chair-like, table-like, bilayer AA- and finally AB-stacked graphene. After hydrogenation, monolayer graphene and bilayer graphene are behave as semiconducting systems owning a wide direct band gap and this means that all orbitals have several states around the Fermi level. The energy gap in DOS and Schottky anomaly in EHC curves of these structures are compared together illustrating the maximum and minimum band gaps are appear for monolayer chair-like and bilayer AA-stacked graphane, respectively. In spite of these, our findings show that the maximum and minimum values of Schottky anomaly appear for hydrogenated bilayer AA-stacked and monolayer table-like configurations, respectively.     

基于石墨烯-钙钛矿量子点场效应晶体管的光电探测器

以等离子增强化学气相沉积法制备的石墨烯作为导电沟道材料,将其与无机CsPbI_3钙钛矿量子点结合,设计并制备了石墨烯-钙钛矿量子点场效应晶体管光电探测器.研究和分析了石墨烯作为场效应晶体管的电学特性及其与钙钛矿量子点结合作为光电探测器的光电特性.结果表明,石墨烯在场效应晶体管中表现出良好的电学性质,其与钙钛矿量子点的结合对波长为400 nm的光辐射具有明显的光响应,在光强为12μW时器件光生电流最大为64μA,响应率达6.4 A·W~(-1),对应的光电导增益和探测率分别为3.7×10~4,6×10~7Jones(1 Jones=1 cm·Hz~(1/2)·W~(-1)).     

Two-photon absorption of optical and x-ray quanta

Two-photon absorption of an optical (laser) and an x-ray quantum is considered within the context of the Born approximation. A simple expression relating the two-photon and one-photon photoionization absorption coefficients is obtained. If the upper state is one of the conduction bands of a solid, the two-photon absorption coefficient is shown to peak at points in the zone for which the curvature of the band is a maximum. Numerical estimates show that with a 100 kW Nd laser, the intensity of the two-photon absorption process is a few percent of that of the one-photon process.     

The low energy electronic band structure of bilayer graphene

We employ the tight binding model to describe the electronic band structure of bilayer graphene and we explain how the optical absorption coefficient of a bilayer is influenced by the presence and dispersion of the electronic bands, in contrast to the featureless absorption coefficient of monolayer graphene. We show that the effective low energy Hamiltonian is dominated by chiral quasiparticles with a parabolic dispersion and Berry phase 2π. Layer asymmetry produces a gap in the spectrum but, by comparing the charging energy with the single particle energy, we demonstrate that an undoped, gapless bilayer is stable with respect to the spontaneous opening of a gap. Then, we describe the control of a gap in the presence of an external gate voltage. Finally, we take into account the influence of trigonal warping which produces a Lifshitz transition at very low energy, breaking the isoenergetic line about each valley into four pockets.     

Localized states at zigzag edges of bilayer graphene

We report the existence of zero-energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wave functions of these peculiar surface states. It is shown that zero-energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene and (ii) states with a finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.     

YNbO4：Tm3+/Yb3+上转换发光特性研究

按照50Nb₂O₅-（46-x）Y₂O₃-4Yb₂O₃-xTm₂O₃（x=0.1,0.2,0.5,1,2）的配比方式,采用高温固相法制备出了掺杂Tm³⁺/Yb³⁺的YNbO₄晶体粉末。在980 nm红外光激发下,观测到波长为478,645,707 nm的上转换荧光,分别对应于Tm³⁺离子的¹G₄→³H₆、¹G₄→³F₄、³F₃→³H₆能级跃迁过程。利用上转换发射功率与980 nm激光器工作电流关系估算出跃迁过程吸收光子数目为2.72,2.69,2.01,从而确定出前两者为三光子吸收过程,最后一个对应于双光子吸收过程。运用Judd-Ofelt理论研究样品光谱特性,根据样品的吸收谱得到样品的谱线强度参数Ω_t（t=2,4,6）,进而得出理论振子强度及实验振子强度,二者均方根偏差δ_rms=1.299×10^-7。计算了Tm³⁺离子向下能级跃迁的跃迁几率、跃迁分支比等参数。最后得出结论：（1）³F₄能级寿命较长,适合作为上转换中间能级;（2）³H₅能级寿命较长,且³H₅→³H₆跃迁分支比（96.46%）接近100%,可用于产生1 216 nm激光。