InGaAs自适应阱簇复合结构的偏振双峰辐射机制及能带特征

研究一种基于富铟团簇(IRC)效应的新型高应变InGaAs/GaAs自适应阱簇复合(WCC)量子结构，该结构具有比较灵活的能带调控能力，可产生一种特殊的偏振双峰光谱。为探究该WCC结构的偏振双峰辐射机制及能带特征，利用IRC效应生长获得了自适应WCC结构，并测量了该新型结构的偏振光致发光(PL)光谱，在横向电场(TE)和横向磁场(TM)模式下，PL光谱皆显示出特殊的双峰结构。这主要是铟原子的自适应迁移导致有源层同时存在铟组分正常和铟组分降低的In_xGa_1-xAs材料所致。根据半导体激光器的跃迁矩阵元理论和PL光谱的双峰能量间距，阐明不同偏振模式下的光谱双峰与多组分In_xGa_1-xAs材料的对应辐射机制，同时确定该WCC结构的混合能带特征。该研究内容对IRC效应和新型WCC发光结构的发展和应用具有重要研究意义。     

光抽运半导体激光器增益特性研究

以InGaAs/GaAs应变量子阱材料为例,介绍了考虑能带及波函数的混合效应的6×6Luttinger-Kohn哈密顿量,提出用有限差分法求解含Luttinger-Kohn哈密顿量的有效质量方程,数值模拟得到导带和价带的能带结构,计算应变量子阱的跃迁矩阵元,进而用Lorentzian线形函数计算材料增益。讨论了量子阱阱宽、注入载流子浓度、温度等因素对量子阱材料增益的影响。计算结果表明,压应变使得量子阱有效带隙增大,降低了材料增益的透明电流密度,继而降低器件的阈值,改善器件的输出特性;增益峰值波长和发射波长之间合适的偏差,会使光抽运半导体激光器的阈值电流和工作电流随温度有较小的变化。     

SiGe/Si多量子阱中的光致子带间吸收研究

本文论述了硅锗量子阱中的光致子带间吸收的机理,并在实验中探测SiGe/Si量子阱价带间的红外光致吸收.载流子由氩离子激光器作为光泵浦源产生,所导致的红外吸收由一个步进式傅里叶变换光谱仪来探测.在硅锗量子阱中的光致吸收有两个来源:类似单一掺杂的SiGe薄层的体吸收的自由载流子吸收,及量子阱价带的子带间吸收.实验探测了TE和TM偏振方向的吸收.TM偏振方向的吸收是由偏离布里渊带中心的载流子的跃迁所造成的.我们认为这种光致吸收技术在研究价带耦合效应及其对子带间吸收的影响是非常有效的.     

量子阱半导体激光器阈值的理论分析

分析了单量子阱(SQW)、多量子阱(MQW)和分别限制异质结构量子阱(SCH-SQW)半导体激光器的阈值.求出了表示光增益随注入载流子密度变化的方程.利用这个结果,得到了上述三种量子阱半导体激光器的阈值电流密度的表达式.     

MBE GaAs_(1-x)Sb_x/GaAs应变层量子阱的光调制反射光谱

本文采用光调制反射光谱技术研究了MBEGaAs_(1-x)Sb_x/GaAs应变层量子阱。通过实验分析和理论上对受应力作用后能带结构的估算,确认在这一系统中流体静压力作用引起的能带结构变化主要出现在导带上,同时也证实了GaAs_(1-x)Sb_x/GaAs应变层量子阱属于第Ⅱ型量子阱结构。实验结果与理论估算符合很好。     

1.3μm偏振无关半导体光放大器单片集成模斑变换器

用金属有机化学气相外延生长并制作了 1.3μm脊型波导偏振无关半导体光放大器集成模斑变换器 ,器件有源区为同时采用压应变量子阱和张应变量子阱的混合应变量子阱结构以获得TE和TM偏振模式的增益平衡 ,模斑变换器采用一种新型脊型侧向锥形波导结构 ;集成模斑变换器的半导体光放大器远场发散角为 12°× 15° ,接近圆形光斑 ,与平头标准单模光纤耦合损耗为 - 2 .6dB ,在水平和垂直方向上的 - 1dB耦合对准容差分别为± 2 .3μm和± 1.6 μm ;在 2 0 0mA偏置电流下 ,半导体光放大器小信号增益近 2 4dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 .6dB。     

852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性

为了提高852 nm半导体激光器的温度稳定性,理论计算了InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的增益,模拟对比并研究了不同量子阱的增益峰值和峰值波长随温度的漂移。结果显示,采用In_0.15Ga_0.74-Al_0.11As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的温度稳定性。使用金属有机化学气相沉积(MOCVD)外延生长了压应变In_0.15Ga_0.74Al_0.11As单量子阱852 nm半导体激光器,实验测得波长随温度漂移的数值为0.256 nm/K,实验测试结果验证了理论计算结果。     

LP-MOVPE生长的低阈值1.3μm InGaAsP/InP压、张应变交替MQW激光器特性

本文国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X－ray双晶摇摆衍射曲线和荧光光谱特性表征.在此材料基础之上制作的宽接触激光器阈值电流密度小于300A/cm²(腔长800μm),平面掩埋条形结构激光器平面掩埋异质结(PBH)条形结构多量子阱激光器阈值电流13～15mA.经过双腔面镀增透射膜后,其TE模与TM模自发发射谱光强差为3dBm,呈现偏振补偿特性.     

InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究

详细地介绍了计算线宽展宽因子(α因子)的理论基础及推导过程, 建立了α因子的简便模型. 该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对α因子的影响, 利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益, 进而对α因子进行近似计算. 模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及α 因子的大小, 计算结果与文献报道的实验值相符. 进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对α 因子的影响. 结果表明, α 因子随In组分和阱宽的增加而增加.     

980nm高功率列阵半导体激光器

本文分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱激光器材料。利用该材料制作的应变量子阱列阵半导体激光器准连续（100Hz,100μs）输出功率达到80W（室温）,峰值波长为978－981nm。     

高功率垂直外腔面发射半导体激光器增益设计及制备

垂直外腔面发射半导体激光器(vertical external cavity surface emitting laser, VECSEL)兼具高功率与良好的光束质量,是半导体激光器领域的持续研究热点之一.本文开展了光抽运VECSEL最核心的多量子阱增益区设计,对量子阱增益光谱及其峰值增益与载流子浓度及温度等关系进行系统的理论优化,并对5种不同势垒构型的量子阱增益特性进行对比,证实采用双侧GaAsP应变补偿的发光区具有更理想的增益特性.对MOCVD生长的VECSEL进行器件制备,实现了VECSEL在抽运功率为35 W时输出功率达到9.82 W,并且功率曲线仍然没有饱和;通过变化外腔镜的反射率, VECSEL的激光波长随抽运功率的漂移系数由0.216 nm/W降低至0.16 nm/W,证实外腔镜反射率会影响VECSEL增益芯片内部热效应,从而影响VECSEL激光输出功率.所制备VECSEL在两正交方向上的发散角分别为9.2°和9.0°,激光光斑呈现良好的圆形对称性.     

Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-μm semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-μm InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers.     

Strongly confined semiconductor quantum dots: Pair excitations and optical properties

This paper reviews a microscopic model of basic electron-hole pair excitation processes in strongly confined semiconductor quantum dots (QD) and their influence on the optical QD properties. The effects of valence band mixing, Coulomb interaction, and surface polarization are taken into account. The exciton and biexciton wave functions and energies are obtained using a numerical diagonalization method. The computed optical spectra, such as absorption, gain, pump-probe, and two-photon absorption, agree well with experiments.     

All-optical switching and passive mode-locking based on non-linear polarization rotation in a semiconductor quantum well amplifier

Owing to differences in the selection rules of electron transitions between TE and TM modes in a quantum well structure, and optical amplifier with such a structure manifests linear birefringence and anisotropy of gain-absorption saturation. The anisotropy leads to the evolution of power-dependent polarization in the optical amplifier. We demonstrate experimentally efficient non-linear self-switching based on this phenomenon in an InGaAs/GaAs single quantum well amplifier. Also, by utilizing the non-linear polarization evolution, we show numerically passive mode-locking of a semiconductor laser with a ring cavity.     

Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm

We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95 μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb/GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2 MHz. The laser produced pulses with 30 pJ energy and a duration of 1.1 ps within a factor of 2 of the Fourier limit.     

Design of polarization independent InGaAs/InGaAlAs coupled quantum well structure in 1.55 μm wavelength region

A novel polarization independent InGaAs/InGaAlAs quantum well (QW) structure in the 1.55 m wavelength region is proposed. A coupled QW structure with tensile strain in the QW and/or barrier region is considered for the reduction of the optical gain difference between TE and TM modes in the wide spectral range. A triple-coupled QW structure with alternative strain (tensile/compressive/tensile) is found to be the most effective in reducing the polarization gain difference. This is because the transition strength difference of each polarization is reduced by energy states coupling. The optimized triple-coupled QW structure shows polarization independence for wide carrier density and wavelength range, which is suitable for polarization independent operation of QW based semiconductor devices, such as semiconductor optical amplifiers.     

An integrated circuit subsystem of quantum dot semiconductor optical amplifier coupled with electro-absorption modulator and its application in wavelength conversion

A multi-section circuit model of quantum dot semiconductor optical amplifier is proposed by employing the standard rate equations. Using this model, gain spectra, saturation property, and occupation probability of quantum dot semiconductor optical amplifier are analyzed by PSPICE simulation. An integrated circuit subsystem of quantum dot semiconductor optical amplifier cascaded with electro-absorption modulator is also derived to investigate the patterning effect reduction in wavelength conversion.     

A study of the ultrafast optical response of magnetized GaAs/AlGaAs quantum wire structures

We have studied analytically the ultrafast optical response of GaAs/AlGaAs quantum wire subjected to a moderately strong transverse magnetic field. The energy dispersion relations have been numerically calculated and show a significant deviation from parabolic behaviour as the magnetic field is increased. The effective semiconductor Bloch equation technique is used to calculate the induced polarization and differential transmission spectra in the quantum wire. The calculated induced polarization is used to study the optical coherent transient phenomenon of optical nutation. The analysis demonstrates that the magnetic field effectively alters the optical response of the semiconductor quantum wire nanostructures. It is observed that the nutating signal frequency enhances with an increasing magnetic field. The results are useful to explain magnetic field effects on the transient optical properties of semiconductor nanostructures.     

The optical Stark effect in semiconductor quantum wires

A new approach for controlling the optical emission wavelength of semiconductor quantum wires is proposed. The wavelength control resides upon the effect of an intense, long-wavelength laser field radiation applied to the semiconductor structure. Under such condition a strong optical Stark effect leads to optical tunability. Calculation of the optical Stark effect was carried out in the frame of the nonperturbative theory and finite difference method. Different geometries concerning the size of GaAs–AlGaAs quantum wires as well as the polarization direction and the strength of the applied laser field with respect to the quantum structure were considered.     

Optical coherent transient effects in semiconductor quantum wells exhibiting a two-hole species valence band

The paper deals with the detailed theoretical investigation of optical coherent transient processes in a narrow direct gap semiconductor quantum well structure (QWS), duly irradiated by a near band gap resonant ultrashort pulsed laser with moderate excitation intensity. The photoinduced band-to-band electronic transitions are considered from both the heavy-hole (hh) and light-hole (lh) valence bands to the lowest (1s) exciton state below the fundamental absorption edge. Since the hole populations in both hh and lh bands are nontrivial in the case of the transverse plane in a QWS, we have recognized that the hh and lh excitons participate in photoinduced transitions. The photoinduced electron density is chosen to be less than the Mott density such that various many-body processes, otherwise significant, can be neglected. The well-established time-dependent perturbation treatment of the semiconductor Bloch equations has been followed to calculate the induced polarization as well as the differential transmission spectra. We find from the numerical estimates made for a GaAs/AlGaAs single QWS shined by a femtosecond pulsed Ti : Sapphire laser that the transmission characteristics of the coherent transient processes are dominated by the lh species in the QWS. Rabi oscillation and Stark splitting as calculated for the two-hole species QWS agree qualitatively very well with recent experimental observations.