Co0.9Fe0.1薄膜面内元素分辨的磁各向异性

利用X射线磁性圆二色技术对Co_0.9Fe_0.1薄膜面内元素分辨的磁各向异性进行了研究，通过剩磁模式测量不同磁化方向的样品组分原子单位空穴磁矩的变化，发现除了在生长的磁诱导方向存在易磁化轴外，在与该轴垂直的方向还存在一个类似易轴的软磁化轴；面内的两个难磁化轴与易磁化轴取向大约成66°夹角，从而构成了面内双轴磁各向异性；对不同组分元素，其单位空穴磁矩随磁化方向的变化趋势基本相同，不同磁化方向Fe原子单位空穴的磁矩值约为Co的对应值的87%，反映了Fe原子和Co原子之间存在着强烈的铁磁性耦合. 关键词： 磁各向异性 X射线磁性圆二色 铁磁耦合 CoFe合金薄膜     

c轴垂直取向FePt薄膜的磁和磁光性能研究

采用直流磁控溅射的方法在氧化镁(100)单晶基板上生长了一系列c轴垂直取向的FePt薄膜，通过改变沉积时的基板温度，薄膜从Fe，Pt原子无序排列的面心立方结构逐渐变化到有序排列的L1₀相面心四方结构.在此基础上，系统研究了FePt薄膜的化学有序度对磁和磁光性能的影响.随着有序度的增加，FePt薄膜的磁晶各向异性能，以及沿垂直方向的矫顽力、剩磁比均增加，在基板温度高于530 ℃时制备的薄膜中的磁晶各向异性能超过1 J/cm³.同时，还观察到有序FePt合金薄膜的磁光克尔光谱(克尔转角的大小和极值所对应的跃迁光子能量)随化学有序度的显著变化. 关键词： FePt薄膜 化学有序度参数 磁光克尔光谱     

Co0.9Fe0.1薄膜面内元素分辨的磁各向异性

利用X射线磁性圆二色技术对Co0.9Fe0.1薄膜面内元素分辨的磁各向异性进行了研究,通过剩磁模式测量不同磁化方向的样品组分原子单位空穴磁矩的变化,发现除了在生长的磁诱导方向存在易磁化轴外,在与该轴垂直的方向还存在一个类似易轴的软磁化轴;面内的两个难磁化轴与易磁化轴取向大约成66°夹角,从而构成了面内双轴磁各向异性;对不同组分元素,其单位空穴磁矩随磁化方向的变化趋势基本相同,不同磁化方向Fe原子单位空穴的磁矩值约为Co的对应值的87%,反映了Fe原子和Co原子之间存在着强烈的铁磁性耦合.     

Nd-Fe-B/FeCo多层纳米复合膜的结构和磁性

制备了Nd₂₈Fe₆₆B₆/Fe₅₀Co₅₀多层纳米复合磁性薄膜，对溅射态和650℃退火处理15 min试样的相成分分析和微结构的观察显示，溅射态薄膜呈非晶态，经650℃退火处理15 min后，薄膜主要相成分为硬磁性Nd₂Fe₁₄B相和软磁性相FeCo(110)相.Nd₂Fe₁₄B相呈柱状，其易磁化c轴垂直于膜面，尺寸约10 nm.在硬磁性相和软磁性相之间存在少量富Nd相和非晶态，富Nd相大小约7 nm.磁性测量和分析表明，1)该系列薄膜退火态具有垂直于膜面的磁晶各向异性.2)对于固定厚度(10 nm)层Nd-Fe-B和不同厚度(t_FeCo=1—100 nm)层FeCo多层纳米复合膜,剩磁随软磁相FeCo 厚度的增加快速增加，而矫顽力则减小.当t_FeCo=5 nm时，最大磁能积达到200 kJ/m³. 3)硬磁相Nd-Fe-B层和软磁相FeCo层之间交换耦合导致剩磁和磁能积增强. 关键词： Nd-Fe-B/FeCo多层纳米复合膜 交换耦合 磁各向异性     

Nd28Fe66B6/Fe50Co50双层纳米复合膜的结构和磁性

利用磁控溅射法制备了Nd₂₈Fe₆₆B₆/Fe_{50Co50 双层纳米复合磁性薄膜，研究了其结构和磁性.经873K退火处理15min 后，利用x射线衍射仪测定薄膜晶体结构，采用俄歇电子能谱仪估算薄膜厚度和超导量子干 涉仪测量其磁性.磁性测量表明，1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲 线和小回线的形状特征可知，矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度（10nm） 层的硬磁相Nd-Fe-B和不同厚度（dFeCo=1—100nm）层软磁相FeCo双层纳米复合 膜,剩磁随软磁相FeCo 厚度的增加快速增加，而矫顽力则减少.当dFeCo=5nm 时 ，最大磁能积达到160×１０^３A/m.磁滞回线的单一硬磁相特征说明，硬磁相Nd -Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由 于两相磁性交换耦合所致. 关键词： Nd-Fe-B/FeCo双层纳米复合膜 交换耦合 磁性增强}     

Mn42Al50-xFe8+x合金的磁性和磁热效应

研究了Mn₄₂Al_50-xFe_8+x合金的结构、磁性和磁热效应. 通过成分调节, 居里温度T_C在室温附近一宽温区连续可调, 分别为270 K (Mn₄₂Al₄₂Fe₁₆), 341 K (Mn₄₂Al₄₀Fe₁₈)和370 K(Mn₄₂Al₃₈Fe₂₀). 磁化强度在相变温度处发生一陡降, 热磁曲线和等温磁化曲线均未观察到热和磁的滞后, 表明发生一可逆的二级相变. 在各自居里温度附近, 0-5 T的外磁场变化下磁熵变峰值分别为2.48, 2.52和2.40 J·kg^-1·K^-1. Mn_50-xAl_50-yFe_x+y合金的磁熵变峰值虽然与许多优良的磁制冷材料相比并不大, 但是制备该化合物的原材料价格非常低廉, 制备工艺简单, 加工成型也较容易, 化合物本身耐腐蚀性、延展性较好, 且在居里温度附近发生的是可逆的二级相变, 无晶格或结构的变化, 有利于制冷剂的多次循环使用. 关键词： 磁性 磁热效应 二级相变     

Fe100－xPdx合金纳米线阵列的制备及其磁性研究

利用直流电沉积法在多孔阳极氧化铝模板中制备出了一系列Fe_100-xPd_x磁性纳米线阵列. Pd的增加使纳米线的总体磁性降低，各向异性和矫顽力也发生了较大的变化. 当Pd含量高达x=30时，纳米线仍有相当高的矫顽力(7.48 kA/m)和较明显的各向异性，但当Pd的含量增加到50%时，纳米线的易磁化方向由平行线的方向反转到垂直线的方向. 实验证明，这是由于在Fe₈₀Pd₂₀和Fe₇₀Pd₃₀中连续的磁性相在Fe₅₀Pd₅₀纳米线中变成了与非磁性相相互间隔的非连续片状结构. 片状磁性相的形状各向异性使易磁化方向转变到垂直纳米线轴的方向. 从生长动力学的角度对Fe₅₀Pd₅₀纳米线中这种片状的形成进行了解释. 关键词： 纳米线 电化学沉积 磁性     

溅射氧化铁薄膜矫顽力的研究

本文报道了有关溅射氧化铁薄膜磁性能的系统研究,特别着重于矫顽力的温度依赖关系和矫顽力随不同氧化铁相的变化。从理论分析与实验测量结果的对比中,给出了形状各向异性、磁晶各向异性及应力各向异性各自对Fe₃O₄薄膜、γ-Fe₂O₃薄膜及二者混合相薄膜的贡献,并且得到了Fe₃O₄薄膜和γ-Fe₂O₃薄膜的磁晶各向异性常数K₁的温度依赖关系曲线。 关键词：     

利用FePt/Au多层膜结构制备垂直磁记录L10-FePt薄膜

利用磁控溅射方法在100℃的MgO单晶基片上制备了［FePt/Au］₁₀多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力（H_C）、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明：FePt/Au多层膜在退火后具有较高的H_C、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明：Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄 关键词： 0-FePt薄膜')" href="#">L1₀-FePt薄膜 有序化温度 垂直磁各向异性 磁交换耦合作用     

Ce1.66Mg1.34Co3和α″-Fe16N2多层梯度膜磁反转性质的微磁学模拟

为了改善永磁薄膜的磁性能,基于微磁学理论,使用编程软件OOMMF针对Ce_1.66Mg_1.34Co₃和α″-Fe₁₆N₂交换耦合多层梯度膜的磁化过程进行模拟,系统研究磁晶各向异性梯度对多层膜性能的影响,分析体系的剩余磁化强度、矫顽力、磁滞回线和磁化反转过程中的能量变化。研究表明：减小磁晶各向异性梯度或增加界面处磁晶各向异性的差值,可以有效提高薄膜的矫顽力和剩余磁化强度,从而改善磁性能。通过计算磁矩分布发现一种磁涡旋态,这种磁涡旋态的产生过程伴随系统能量的增加。     

垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究

具有超强垂直磁各向异性的L1₀-Mn_xGa薄膜由于其与半导体材料结构及工艺的高度兼容性而受到广泛关注, 其超高垂直磁各向异性能和极低的磁阻尼因子预示着L1₀-Mn_xGa薄膜在高热稳定性自旋电子学器件中将发挥重要作用. 而L1₀-Mn_xGa超薄膜对于降低L1₀-Mn_xGa基垂直磁各向异性隧道结中的磁矩翻转临界电流密度有着重要的意义. 本文采用分子束外延的方法, 在半导体GaAs衬底上成功制备出了一系列不同厚度的L1₀-Mn_1.67Ga薄膜, 厚度范围为1-5 nm. 生长过程中反射式高能电子衍射原位检测以及X射线衍射结果均表明了其良好的单晶相. 磁性测量结果表明, 厚度在1 nm以上的L1₀-Mn_1.67Ga薄膜均可以保持垂直磁各向异性特征, 厚度为5 nm的L1₀-Mn_1.67Ga薄膜的垂直磁各向异性能可达到14.7 Merg/cm³. 这些结果为基于L1₀-Mn_1.67Ga的垂直磁各向异性隧道结在自旋转移扭矩驱动的磁随机存储器等低功耗器件的集成及应用提供了重要的实验支持.     

Perpendicular magnetic anisotropy of Fe-Nd alloy thin films

A study of the magnetic properties of Fe_{100 − x}Nd_x (18 x 50) films made by rf sputtering has been carried out. The perpendicularly magentized films were fabricated for compositions in the range from x = 35 to 50 at substrate temperatures between 210 to 290°C. The intrinsic perpendicular magnetic anisotropy constant K_u is maximum at about x = 40 where K_u is about 1 × 10⁷ erg/cm³ at room temperature. The temperature dependence of K_u implies that the origin of the perpendicular magnetic anisotropy may be related to some sort of atomic ordering of crystalline clusters in an amorphous matrix.     

L1_0-FePt合金单层磁性薄膜的微磁学模拟

具有四方结构的L10-FePt合金因其具有高磁晶各向异性和良好的化学稳定性而成为超高密度薄膜磁记录介质的最佳选择.对实验制备得到的磁性能良好的垂直取向L10-FePt合金单层膜进行了微磁学分析.在传统微磁学模型的基础上,根据晶体的对称性,引入了四角磁晶各向异性能密度的唯象表达形式;又依据薄膜生长过程中晶格对称性的破坏,考虑了薄膜面内的应力,并引入了磁弹性能.以四角磁晶各向异性能和磁弹性能为重点,对L10-FePt合金单层膜的磁滞回线进行了详细的分析,并且用微磁学方法确定了薄膜面内应力的大小.     

强磁场下Sm-Fe薄膜不同晶态组织演化及磁性能调控

针对Sm-Fe薄膜的不同晶态组织演化和磁性能调控问题,采用分子束气相沉积方法制备Sm-Fe薄膜时,通过改变Sm含量、膜厚和强磁场来调节薄膜的晶态和磁性能.结果表明,Sm含量可以调节Sm-Fe薄膜的晶态组织演化,而晶态组织的演化和强磁场对磁性能有显著影响.Sm-Fe薄膜在Sm原子比为5.8%时是体心立方晶态组织,在Sm含量为33.0%时为非晶态组织,而膜厚和强磁场不会影响薄膜的晶态组织.非晶态薄膜的表面粗糙度和表面颗粒尺寸都比晶态薄膜的小,施加6 T强磁场会使表面颗粒尺寸增大,而表面粗糙度降低.非晶态薄膜的饱和磁化强度M_s比晶态薄膜的M_s(1466 emu/cm~3,1 emu/cm~3=4π×10-10T)低约47.6%,施加6 T强磁场使非晶态和晶态薄膜的M_s均降低约50%.Sm-Fe薄膜的矫顽力H_c在6—130 Oe(1 Oe=103/(4π)A/m)之间,其中,非晶态薄膜的H_c比晶态薄膜的H_c大.施加6 T强磁场使晶态薄膜的H_c增大,而使非晶态薄膜的H_c减小,最高可以减少95%.结果表明含量和强磁场可以用于调控Sm-Fe薄膜的晶态和磁性能.     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

Recent progress in perpendicularly magnetized Mn-based binary alloy films

In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxA1 thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and perma- nent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxA1 with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxA1 respec- tively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.     

Magnetic anisotropic properties in Fe3O4 and CoFe2O4 ferrite epitaxy thin films

Epitaxial thin films of Fe₃O₄ and CoFe₂O₄ on MgO (0 0 1) substrates were grown by molecular beam epitaxy at low temperature growth process. Magnetization and hysteresis loop of both films were measured to investigate magnetic anisotropic properties at various temperatures. Anomalous magnetic properties are found to be correlated with crystalline, shape, and stress anisotropies. The Fe₃O₄ film below Verwey structural transition has a change in crystal structure, thus causing many anomalous magnetic properties. Crystalline anisotropy and anomalous magnetic properties are affected substantially by Co ions. The saturation magnetization of Co–ferrite film becomes much lower than that of Fe₃O₄ film, being very different from the bulks. It indicates that the low temperature growth process could not provide enough energy to have the lowest energy state.     

Manipulating magnetic anisotropies of Co/MgO(001) ultrathin films via oblique deposition

We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO(001) substrates by molecular beam epitaxy at different deposition angles,i.e.,0?,30?,45?,60?,and 75?with respect to the surface normal.Low energy electron diffraction(LEED),surface magneto–optical Kerr effect(SMOKE),and anisotropic magnetoresistance(AMR) setups were employed to investigate the magnetic properties of cobalt films.The values of in-plane uniaxial magnetic anisotropy(UMA) constant Ku and four-fold magnetocrystalline anisotropy constant K1 were derived from magnetic torque curves on the base of AMR results.It was found that the value of Ku increases with increasing deposition angle with respect to the surface normal,while the value of K_1 remains almost constant for all the samples.Furthermore,by using MOKE results,the Ku values of the films deposited obliquely were also derived from the magnetization curves along hard axis.The results of AMR method were then compared with that of hard axis fitting method(coherent rotation) and found that both methods have almost identical values of UMA constant for each sample.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Optimized growth of compensated ferrimagnetic insulator Gd_3Fe_5O_(12) with a perpendicular magnetic anisotropy

Compensated ferrimagnetic insulators are particularly interesting for enabling functional spintronic,optical,and microwave devices.Among many different garnets,Gd_3 Fe_5 O_(12)(GdIG) is a representative compensated ferrimagnetic insulator.In this paper,we will study the evolution of the surface morphology,the magnetic properties,and the magnetization compensation through changing the following parameters:the annealing temperature,the growth temperature,the annealing duration,and the choice of different single crystalline garnet substrates.Our objective is to find the optimized growth condition of the GdIG films,for the purpose of achieving a strong perpendicular magnetic anisotropy(PMA) and a flat surface,together with a small effective damping parameter.Through our experiments,we have found that the surface roughness approaching 0.15 nm can be obtained by choosing the growth temperature around 700℃,together with an enhanced PMA.We have also found the modulation of magnetic anisotropy by choosing different single crystalline garnet substrates which change the tensile strain to the compressive strain.A measure of the effective magnetic damping parameter(α_(eff)=0.04 ± 0.01) through a spin pumping experiment in a GdIG/Pt bilayer is also made.Through optimizing the growth dynamics of GdIG films,our results could be useful for synthesizing garnet films with a PMA,which could be beneficial for the future development of ferrimagnetic spintronics.