The Electron－Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots are studied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method of numerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the binding energy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupled quantum dot as a function of the dot radius for different vaJues of the distance and the magnetic field strength.     

The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots arestudied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method ofnumerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the bindingenergy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupledquantum dot as a function of the dot radius for different values of the distance and the magnetic field strength.     

Inversion of the exciton fine structure splitting in quantum dots

The fine structure splitting of exciton state was measured for a large number of single InAs quantum dots in GaAs. It is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Degeneracy of the exciton spin states is an important step to producing entangled photons from the biexciton cascade. Thermal annealing reduces the exciton confinement and thereby increases the number of degenerate dots in a particular sample.     

The negatively charged exciton in double-layer quantum dots

The hyperangular equation for charged semiconductor complexes in a double-layer harmonic quantum dot was solved numerically by using the correlated hyperspherical harmonics as basis functions. By using this method, we have calculated the energy spectra of the low-lying states of a charged exciton as a function of the radius of the quantum dot and the binding energy spectra of the ground state as a function of the radius of the quantum dot for a few values of the distance between the vertically coupled dots and the electron-to-hole mass ratio. Received 3 December 1999     

Excitons in coupled quantum dots

Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole.     

Negative Trions Trapped by a Spherical Parabolic Quantum Dot

In this paper, a negatively charged exciton trapped by a spherical parabolic quantum dot has been investigated. The energy spectra of low-lying states are calculated by means of matrix diagonalization. The important feature of the low-lying states of the negatively charged excitons in a spherical quantum dot is obtained via an analysis of the energy spectra.     

Positively Charged Exciton in Double-Layer Quantum Dots

The Hamiltonian equation for positively charged exciton in double-layer harmonic quantum dots is solved numerically by using the exact diagonalization techniques. We find that the correlation energy Ec of positively charged exciton increases with increasing the confinement strength and the binding energy decreases obviously for the heavy hole.     

Excitons in artificial quantum dots in the weak spatial confinement regime

The exciton states in individual quantum dots prepared by the selective interdiffusion method in CdTe/CdMgTe quantum wells are studied by the methods of steady-state optical spectroscopy. The annealing-induced diffusion of Mg atoms inward to the bulk of the quantum well, which is significantly enhanced under the SiO₂ mask, leads to a modulation of the bandgap width in the plane of the well, with the minima of the potential being located in the mask aperture areas. A lateral potential that arises, whose height is in the range 30–270 meV and characteristic scale is about 100 nm, efficiently localizes carriers, which form quasi-zero-dimensional excitons in the weak spatial confinement regime. Detailed magnetooptical studies show that Coulomb correlations play a significant role in the formation of exciton states under such a regime, which, in particular, manifests itself in the localization of the wavefunction of carriers on scales that are considerably smaller than the scale of the lateral potential. The particular features of the interlevel splitting, of the biexciton binding energy, and of the diamagnetic shift are discussed. A strong dependence of the interlevel relaxation on the interlevel splitting (the phonon neck) indicates that alternative relaxation mechanisms in the quantum dots studied are weak. The excited states are populated according to the Pauli principle, which indicates that it is possible to apply the shell model of many-exciton states to quantum dots under the weak spatial confinement conditions.     

Positively Charged Exciton in Double-Layer Quantum Dots

The Hamiltonian equation for positively charged exciton in double-layer harmonic quantum dots is solved numerically by using the exact diagonalization techniques. We find that the correlation energy Ec of positively charged exciton increases with increasing the confinement strength and the binding energy decreases obviously for the heavy hole.     

纤锌矿InGaN staggered量子阱中的激子态和光学性质

本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered量子阱中的激子态和光学性质.数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显的影响.当阱宽增加时,量子受限效应减弱,激子结合能降低,带间发光波长增加.另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低.本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered量子阱中的激子态和光学性质.     

纤锌矿InGaN staggered量子阱中的激子态和光学性质

本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered 量子阱中的激子态和光学性质。数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显地影响。当阱宽增加时,量子受限效应减弱,激子结合能降低, 带间发光波长增加。另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低。本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered 量子阱中的激子态和光学性质。     

EXCITON STATES IN QUANTUM DISKS

The method of few-body physics is applied to the calculation of the low-lying states of the exciton of a GaAs disk-like quantum dot with a parabolic potential. The binding energy of the exciton in quantum disks is calculated for two different thicknesses as a function of the disk size. The four lowest exciton states dependent on the disk thickness are investigated.     

Investigation of Dynamical Parameters of Exciton Confined in CdS Spherical Quantum Dots with a B-Spline Technique

Exciton energies as a function of radii of quantum dots in the range of 5-35 A are calculated based on effective mass approximation model with the B-spline technique and compared with experimental and other theoretical data for the CdS dots. This method leads to accurate and fast convergent exciton energy, which are in good agreement with experimental data in the whole confinement regime. The effect of penetration of wave function from the inside to the outside of the dots and the effect of dielectric constants are taken into account. The magnitudes of dynamical parameters are discussed. It is found that the different materials surrounding the CdS quantum dot affect not only the potential energy and Coulomb interaction energy of the system, but also the effective masses. The comparison shows that the effective mass approximation model can describe very well the quantum size effects observed experimentally on the exciton ground state energy.     

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots

Transient photoluminescence of GaAs/AlGaAs quantum wires and quantum dots formed by strain confinement is studied as a function of temperature. At low temperature, luminescent decay times of the wires and dots correspond to the radiative decay times of localized excitons. The radiative decay time can be either longer or shorter than that of the host quantum well, depending on the size of the wires and dots. For small wires and dots (∼ 100 nm stressor), the exciton radiative recombination rate increases due to lateral confinement. Exciton localization due to the fluctuation of quantum well thickness plays an important role in the temperature dependence of luminescent decay time and exciton transfer in quantum wire and dot structures up to at least ∼ 80 K. Lateral exciton transfer in quantum wire and dot structures formed by laterally patterning quantum wells strongly affects the dynamics of wire and dot luminescence. The relaxation time of hot excitons increases with the depth of strain confinement, but we find no convincing evidence that it is significantly slower in quasi 1-D or 0-D systems than in quantum wells.     

Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots

The problem of excitonic and biexcitonic binding is studied in the system of parabolic coordinates for a lens-shaped quantum box. The exciton wavefunction is expanded in terms of electron–hole configurations made from electron and hole single-particle states. Configuration interaction method and perturbative calculations are used to study the competition between confinement and correlation effects. Biexcitonic binding energy is calculated in the strong confinement regime and a comparison to the case of a spherical box is made. Absorption spectra with and without correlation effects are computed for InAs/InP quantum dots. Excitonic binding energy and enhancement factor are estimated to be equal to about 20 meV and 1.5, respectively. The excitonic absorption is finally studied in the presence of a uniform vertical electric field. A weak vertical Stark effect is predicted for lens-shaped quantum box described within this model.     

Fine structure of the exciton states in InAs quantum dots

The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to ～10² μeV. It has been shown that, in the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.     

Optical study of single InAs on In0.12Ga0.88As self-assembled quantum dots: biexciton binding energy dependence on the dots size

Single self-assembled InAs quantum dots embedded in a In_0.12Ga_0.88As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power of the single quantum dot photoluminescence has been used to identify the emission of the biexciton complex. The biexciton binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data is compared with experimental results available in the literature for InAs quantum dots. PACS 78.67.Hc; 73.21.La; 78.55.Cr     

Negatively Charged Excitons in a Quantum Disk

The method of few-body physics is applied to treating negatively charged excitons in a quantum disk. The energies of low-lying states of a negatively charged exciton are calculated for a few values of the electron-to-hole mass ratio. A new bound state of a negatively charged exciton in a quantum disk with orbital angular momentum L = 1 and the triplet state of the two bound electrons are predicted. The binding energy of a negatively charged exciton asfunction of disk radius for the heavy hole and the light hole is investigated.     

Absorption Spectra and Refractive Index Changes of an Exciton in a Core/Shell Quantum Dot

The absorption spectra and the refractive index changes are calculated theoretically for an exciton in a core/shell quantum dot. The advantage of our methodology is that one can investigate the influence of the repulsive core by varying two parameters in the confinement potential. The dimensionality effect of exciton quantum dots on the optical absorptions has been studied. It has been found that in the same regime, the optical absorption intensities of excitons are much smaller for the core/shell quantum dots than for the two-dimensional quantum rings. The linear and the nonlinear optical absorption coefficients and refractive index changes have been examined with the change of the confinement potential. The results show that the optical absorptions and the refractive index changes are strongly affected by the repulsive core of core/shell quantum dots. Moreover, the calculated results also reveal that as the inner radius increases, the peak values of the absorption coefficients and the refractive index changes of an exciton will show the optical Aharonov–Bohm oscillation in core/shell quantum dots.     

Electronic energy levels in semiconductor quantum wells and superlattices

We present the results of the calculations of some electronic properties of semiconductor quantum wells and superlattices. The review includes the superlattice band structure and the quantum well bound energy levels; the virtual bound states of semiconductor quantum wells and their influence on the energy spectrum of separate confinement heterostructures. Finally the perturbation of quantum well bound states and exciton states by a static electric field applied parallel to the growth axis is considered.