Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface

We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied π_u bonding and π_g antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.     

Density functional studies of selected metal dioxides

This study investigates the optical properties of selected metal oxides due to their high dielectric constants. The local-spin-density approximation plus Hubbard U (commonly called LDA+U) is used in a study of the structural, mechanical and optical properties of UO₂. The inclusion of a Hubbard U correction to 5f electrons of uranium changes UO₂ from a metal to an insulator and, therefore, has a dramatic effect on the localisation of the electron spin and charge density of uranium. However although the band gap can be reproduced using the effective U parameter, which is equal to 3.5 eV and optical properties were calculated in our previous work, it is difficult to calculate ionic contribution to the static dielectric constant within LDA+U formalism for this compound. It is shown in the present work that the electronic structures of both ceria and thoria exhibit similarities to urania within LDA or PBE functional implementations. Within this functional and linear response theory one can easily calculate static dielectric permittivity and it is shown that in agreement with experiment the predicted values are an order of magnitude larger than the dielectric constant of SiO₂. In this work, high accuracy, first-principles calculations are also used to compare properties of urania versus ceria and thoria and how these similarities can help in understanding these compounds. It is also shown that the B3LYP functional predicts slightly overestimated band gaps for ceria and thoria as well as smaller than experimentally observed electronic contribution to the static dielectric constant, while the index of refraction is well reproduced for thoria.     

Coadsorbate effects on adsorbate vibrational properties

A quantitative analysis of infrared absorption spectra to determine coadsorbate induced relative changes of the vibrational polarizability α_v of an adsorbate mode and of the dielectric screening ? due to this extra species is presented. Four (ternary) coadsorption systems consisting of the Ru(0 0 0 1)-(2 × 2)-(X + CO + O) layer with additional coadsorbates X = H, NO, CO, or O (all of them occupying the remaining empty fcc site) have been studied with FT-IRAS, TDS, LEED and work function change measurements. On-top CO is thereby used as a probe molecule to monitor coadsorbate effects on the dielectric properties of the layer. The vibrational polarizability α_v associated with the internal C-O stretch mode (ν_C-O) of on-top CO is lowered by all coadsorbates. The dielectric screening ? within the adsorbate layer is reduced in the presence of the atomic coadsorbates O and H whereas an increase of ? is found for the molecular coadsorbates, threefold coordinated CO and NO. The derived changes of α_v and dielectric screening ?, as well as the involved line shifts of ν_C-O and ν_Ru-CO can be understood in terms of the standard Blyholder backbonding model, i.e. CO 5σ charge donation to the metal combined with a backdonation to electronic states with 2π∗ character.     

Enhanced dielectric and ferroelectric properties of Pb1−3x/2Lax(Zr0.5Ti0.5)O3 thin films with low lanthanum substitution

Effects of lanthanum (La) substitution (0.003 ≤ x ≤ 0.015) on the dielectric and ferroelectric properties of Pb(Zr_0.5Ti_0.5)O₃ thin films have been investigated. The films were synthesized on the Pt (1 1 1)/Ti/SiO₂/Si (1 0 0) substrates by a sol-gel method. Large dielectric constants of the films are obtained within range of 800-1600 which are almost comparable to those observed in bulk ceramics. The films also show improved remnant polarization values and reduced coercive field values with the increasing addition of La substitution. Our results suggest that low La substitution contributes to enhance film electric properties due to the improvement of non-180° domain wall mobility as well as the stabilization of tetragonal phase.     

The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

Colossal dielectric constants in transition-metal oxides

Many transition-metal oxides show very large (“colossal”) magnitudes of the dielectric constant and thus have immense potential for applications in modern microelectronics and for the development of new capacitance-based energy-storage devices. In the present work, we thoroughly discuss the mechanisms that can lead to colossal values of the dielectric constant, especially emphasising effects generated by external and internal interfaces, including electronic phase separation. In addition, we provide a detailed overview and discussion of the dielectric properties of CaCu₃Ti₄O₁₂ and related systems, which is today’s most investigated material with colossal dielectric constant. Also a variety of further transition-metal oxides with large dielectric constants are treated in detail, among them the system La_2−xSr_xNiO₄ where electronic phase separation may play a role in the generation of a colossal dielectric constant.     

Elasticity, electronic structure, chemical bonding and optical properties of monoclinic ZrO2 from first-principles

Structural parameters as well as elastic, electronic, bonding and optical properties of monoclinic ZrO₂ were investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The calculated structural properties and independent elastic constants of monoclinic ZrO₂ are in favorable agreement with previous work. We have derived the bulk and shear moduli, Young’s modulus and Poisson coefficients for monoclinic ZrO₂ and estimated the Debye temperature of monoclinic ZrO₂ from acoustic velocity. Electronic and bonding properties are studied from the calculation of band structure, densities of states and charge densities. Furthermore, in order to clarify the mechanism of optical transitions in monoclinic ZrO₂, the dielectric functions are calculated and analyzed by means of the electronic structure, which shows significant optical anisotropy in the components of polarization directions (1 0 0), (0 1 0) and (0 0 1).     

UV laser-induced transport properties change in silver metaphosphate glass

Samples of AgPO₃ were prepared from analar oxides (BDH) using standard sintering ceramic technique. The effect of UV Nd:YAG pulsed laser irradiation with wavelength of 355 nm on the transport properties of the prepared glassy samples AgPO₃ was studied. The frequency and temperature dependences of the A.C. conductivity and dielectric properties were analyzed in the temperature range (300 K ≤ T ≤ 393 K) throughout a range of applied frequencies (0.1 kHz ≤ f ≤ 400 kHz). The activation energies were calculated at different temperatures for the unirradiated and irradiated samples. Comparison between the A.C. electrical conductivity, dielectric constant, and dielectric loss, for unirradiated and irradiated samples was performed. The bulk conductivity has been measured with complex impedance method. Cole-Cole diagram has been investigated to obtain the bulk activation energy which corresponds to D.C. conductivity. Results indicate the semiconducting like behavior. At low temperatures and frequencies, random diffusion of the ionic charge carriers via activated hopping gives rise to a frequency independent conductivity characterizing the D.C. conductivity. It was observed that the A.C. and D.C. activation energies have the same order of magnitude.     

Electronic, elastic, optical properties of rutile TiO2 under pressure: A DFT study

The electronic, elastic constants and optical properties of rutile TiO₂ have been investigated using first principle pseudopotential method within generalized gradient approximation (GGA) proposed by Perdew-Burke-Ernzerhof (PBE). The calculated volume, bulk modulus and pressure derivative of bulk modulus are in good agreement with previous experimental and computational results. An underestimated band gap (1.970 eV) along with the higher density of states and expanded energy bands around the fermi level is obtained. Calculated elastic constants satisfying the Born stability criteria suggest that rutile TiO₂ is mechanically stable under higher hydrostatic pressure. The acoustic wave speeds in [1 0 0], [0 1 0], [0 0 1], [1 1 0] and [45° to [1 0 0] and [0 0 1]] directions are predicted using the investigated elastic constants. The dielectric constant is identified with respect to electronic band structure and is utilized to derive the other optical properties like refractive index, energy loss function, reflectivity and absorption. The effect of hydrostatic pressure (0-70 GPa) is described for listed properties. Our investigated results are in good accord with the existing theoretical and experimental results.     

Investigation of the optical anisotropy of PET and PEN films by VIS-FUV to IR spectroscopic ellipsometry

In the last years, a significant amount of research is being performed in the field of polymer research for novel applications, such as flexible electronic devices, photovoltaic cells, high performance optics, data storage, etc. Toward this direction, in this work, the optical anisotropy of biaxially stretched poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN) films has been extensively investigated. The optical properties of the films have been studied in terms of their optical, electronic and vibrational response, by Fourier transform IR spectroscopic ellipsometry (FTIRSE) (900-3500 cm⁻¹) and Vis-fUV variable angle SE (1.5-6.5 eV) techniques. The films optical anisotropy is the result of the stretching procedure during their fabrication, which results to the structural rearrangement of the macromolecular chains parallel to the stretching direction and to a higher structural symmetry. During the SE spectra analysis, the films have been approximated as uniaxial materials with their optic axis parallel to the sample/ambient interface leading to the accurate determination of the principal components ?_||(ω) and ?_⊥(ω) of the dielectric function ?(ω). The detailed study of the electronic transitions has been performed in the Vis-fUV region, where the characteristic features corresponding to the n → π* electronic transitions of the carbonyl -CO group and the ¹A_1g → ¹B_1u transition due to the π → π* excitation of the π-electron structures have been identified and analysed. Furthermore, the FTIRSE spectra allowed the accurate identification and assignment of the features of ?(ω) to the vibrational modes of the various bonding structures characteristic of the PET and PEN macromolecular chains.     

High-k Mg-doped ZST for microwave applications

The (Zr_0.8Sn_0.2)TiO₄ material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260-1320 °C for 2 h. The effects of sintering parameters like sintering temperature (T_s) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m³ with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant ?_r ∼ 37 and high values of the Q × f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc.     

Influence of valence electron concentration on elastic, electronic and optical properties of the alkaline-earth tin oxides A3SnO (A=Ca, Sr and Ba): A comparative study with ASnO3 compounds

By employing first principles method of the plane wave pseudo potential calculations (PP-PW), based on the density functional theory (DFT), within the local density approximation (LDA), the correlation between valence electron concentration and structural, elastic, electronic as well as optical properties of A₃SnO and ASnO₃ compounds where A=Ca, Sr and Ba are investigated. The elastic constants and their pressure dependence are calculated using the static finite strain technique. We derived the bulk, shear and Young's moduli for ideal monocrystalline and for polycrystalline A₃SnO and ASnO₃ aggregates. Band structures reveal that alkaline-earth tin oxides A₃SnO are direct energy band gap (G-G) materials.The hardness of these compounds was explained using chemical bonding properties and Milliken charges transfer. The optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss, are calculated for radiation up to 20 eV. We have found that the static dielectric constants of all these compounds are in good agreement with Penn model.     

First-principles study on the electronic and optical properties of SnxGe1 − x

The electronic and optical properties of the direct band gap alloys Sn_xGe_1 − x (x = 0.000, 0.042, 0.083, 0.125, 0.167, and 0.208) have been studied by using the generalized gradient approximation in the framework of the density functional theory. The calculated lattice constants obey Vergard's law. The band structures show that the alloys have direct band gap and the band gaps can be tunable by Sn contents. The optical properties of the Sn_xGe_1 − x alloys with the physical quantities such as the complex dielectric function, the energy-loss function and the static dielectric constant, respectively, are shown to support the potential application of infrared devices in the future.     

Low dielectric loss Ba0.6Sr0.4TiO3/MgTiO3 composite thin films prepared by a sol–gel process

The dielectric properties of Ba_0.6Sr_0.4TiO₃ (BST)/MgTiO₃ (MT) composite thin films deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by the sol–gel method were investigated. The X-ray pattern analysis indicates that the thin films exhibit good crystalline quality with perovskite phase and that insertion of MT layer does not obviously affect the phase structure of BST thin films. The characterization of dielectric properties demonstrates that configuration of BST/MT/BST thin films is an effective approach to obtain low dielectric loss and dielectric tunability of BST thin films. At room temperature, the tunability of pure BST60 films and BST/MT (15 nm)/BST composite thin films is 47% and 36%, respectively, at the frequency of 1 MHz with an applied electric field of 400 kV/cm. For BST/MT/BST composite thin films, considerable reduction in the dielectric loss values is observed, which renders them attractive for tunable microwave device applications.     

First principle study of cubic perovskites: AgTF3 (T=Mg, Zn)

The structural, electronic and optical properties of AgTF₃ (T=Mg, Zn) are calculated for the first time using the full-potential linearized augmented plane wave method within the generalized gradient approximation. Structural parameters of the compounds are found to be in reasonable agreement with the available literature. Both compounds are found to have narrow and indirect band-gaps. The calculated band gap for AgMgF₃ is 0.78 eV and 0.75 eV for AgZnF₃. It is observed that Ag-4d, Zn-3d and Ag-5s states controls the electronic properties of AgMgF₃ and AgZnF₃. The nature of chemical bonding in these compounds is discussed by the electron density plots. The results of complex dielectric constant, refractive index, normal-incidence reflectivity and optical conductivity are also presented in the incident photon energy range of 0-35 eV. The wide absorption energy range makes these materials suitable for different devices applications.     

Impedance spectroscopy study and ground state electronic properties of In(Mg1/2Ti1/2)O3

The complex perovskite oxide In(Mg_1/2Ti_1/2)O₃ (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε′ and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M″) shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.     

Symplectic large-N theory of topological heavy-fermion semiconductors

The electronic properties of three different oxides (ZnO, SnO₂ and SiO₂) are investigated within many-body perturbation theory in the G ⁰ W ⁰ approximation. The frequency dependence of the dielectric function is either approximated using two different well-established plasmon-pole models (one of which enforces the fulfillment of the f-sum rule) or treated explicitly by means of the contour-deformation approach. Comparing these results, it is found that the plasmon-pole model enforcing the f-sum rule gives less accurate results for all three oxides. The calculated electronic properties are also compared with the available experimental data and previous ab initio results, focusing on the d state binding energies. The G ⁰ W ⁰ approach leads to significantly improved band gaps with respect to calculations based on the density functional theory in the local density approximation.     

Morphological, structural and adsorption features of oxide composites with silica and titania matrices

Morphological, structural, electronic, and adsorption characteristics of complex oxides such as fumed silica/alumina and silica/titania, fumed silica with deposited oxides of Mg, Ti, Mn, Ni, Cu, Zn and Zr, silica gel with grafted ZrO₂, sol-gel titania doped by 3d-metals (Cr, Fe, Mn, V) were compared using adsorption, TEM, AFM, XRD, XPS, Mössbauer and Raman spectroscopy data. It was shown that surface, volume, and phase compositions of oxides, particle size distributions (5 nm-3 μm), specific surface area (S_BET ∼ 50-500 m²/g), and porosity (V_P ∼ 0.1-2 cm³/g) affected by synthesis technique and subsequent treatment determine electronic structure (bandgap, valence band and core levels structure) of the materials, adsorption of molecules and metal ions as well as other characteristics.     

Optical characterization of InxGa1−xN alloys

InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers.The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content (x) in the 0 < x ≤ 0.14 range was found to follow the linear law E_g = 3.44-4.5x.The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS.     

First-principles prediction and partial characterization of the vibrational states of water up to dissociation

A new, accurate, global, mass-independent, first-principles potential energy surface (PES) is presented for the ground electronic state of the water molecule. The PES is based on 2200 energy points computed at the all-electron aug-cc-pCV6Z IC-MRCI(8,2) level of electronic structure theory and includes the relativistic one-electron mass-velocity and Darwin corrections. For H₂¹⁶O, the PES has a dissociation energy of D₀ = 41 109 cm⁻¹ and supports 1150 vibrational energy levels up to 41 083 cm⁻¹. The deviation between the computed and the experimentally measured energy levels is below 15 cm⁻¹ for all the states with energies less than 39 000 cm⁻¹. Characterization of approximate vibrational quantum numbers is performed using several techniques: energy decomposition, wave function plots, normal mode distribution, expectation values of the squares of internal coordinates, and perturbing the bending part of the PES. Vibrational normal mode labels, though often not physically meaningful, have been assigned to all the states below 26 500 cm⁻¹ and to many more above it, including some highly excited stretching states all the way to dissociation. Issues to do with calculating vibrational band intensities for the higher-lying states are discussed.