Reduction of inelastic scattering effect by introduction of GalnAs/GalnP strain-compensated superlattice into multi-quantum barriers

The effect of inelastic scattering on the electron reflection in multi-quantum barriers (MQBs) has been examined using the damped resonant tunnelling model for the first time. The electron reflectivity in the virtual barrier region for unstrained GalnAs/InP MQB deteriorates below 100% by about 10% for phase relaxation time of 0.22ps. We propose a strain-compensated GalnAs/GalnP MQB which not only has virtual barrier 4 times as high as that of an unstrained MQB, but whose reflectivity deterioration is reduced to less than 5% in comparison with 10% for unstrained MQB for the same phase relaxation time. We have also successfully grown a Ga_0.25In_0.75As (1.5% compressive) well/Ga_0.25In_0.75P (1.2% tensile) barrier short-period superlattice with six wells by chemical beam epitaxy, which exhibits the possibility of fabrication of the strain-compensated MQBs.     

An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers

In this paper, we present a critical study of a multi-quantum barrier (MQB) structure fabricated using the Al_0.5In_0.5P/Ga_0.5In_0.5P material system. The structure was optimised theoretically based on a single Γ band model. When an identical structure was placed in a quantum well laser device, no improvement in the threshold current was observed compared to QW laser structure without an MQB. Cross-sectional scanning tunnelling microscopy (STM) was used to assess the structural quality of the MQB structure for the first time. Factors affecting the limited barrier enhancement are discussed in terms of the interfacial quality of the Al_0.5In_0.5P/Ga_0.5In_0.5P interface in the superlattice of the MQB and the need to consider multi-valley transport. The paper highlights some of the fundamental problems that must be overcome for MQBs to be a viable method to improve red laser efficiency.     

Performance analysis of near-field thermophotovoltaic devices considering absorption distribution

This paper elucidates the energy transfer and conversion processes in near-field thermophotovoltaic (TPV) systems, considering local radiation absorption and photocurrent generation in the TPV cell. Radiation heat transfer in a multilayered structure is modeled using the fluctuation-dissipation theorem, and the electric current generation is evaluated based on the photogeneration and recombination of electron-hole pairs in different regions of the TPV cell. The effects of near-field radiation on the photon penetration depth, photocurrent generation, and quantum efficiency are examined in the spectral region of interest. The detailed analysis performed in the present work demonstrates that, while the near-field operation can enhance the power throughput, the conversion efficiency is not much improved and may even be reduced. Subsequently, a modified design of near-field TPV systems is proposed to improve the efficiency.     

Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots

We identify fundamental mechanisms of electron and hole dynamics in self-organized InAs/GaAs quantum dots (QDs) subject to vertical electric fields by photocurrent investigations. We propose a spin–flip mechanism involving a spin exchange between neighboring QDs. The spin–flip process is revealed in the photocurrent dynamics when the exciton population increases unexpectedly with reverse bias.     

Numerical study of performance characteristics of deep violet InGaN DQW laser diodes with AlInGaN quaternary multi quantum barrier electron blocking layer

The performance characteristics of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) with different electron blocking layer (EBL) including a ternary AlGaN bulk EBL, a quaternary AlInGaN bulk EBL and ternary AlGaN multi quantum barrier (MQB) EBL has been numerically investigated. Inspired by the abovementioned structures, a new LD structure with a quaternary AlInGaN MQB EBL has been proposed to improve the performance characteristics of the deep violet InGaN DQW LDs. Simulation results indicated that the LD structure with the quaternary AlInGaN MQB EBL present the highest output power, slope efficiency and differential quantum efficiency (DQE) and lowest threshold current compared with the above mentioned structures. They also indicated that choosing an appropriate aluminum (Al) and indium (In) composition in the quaternary AlInGaN MQB layers could control both piezoelectric and spontaneous polarizations. It will decrease the electron overflow from the active region to p-side and increased the contribution of electron and hole carriers to the radiative recombination effectively. Enhancing radiative recombination in the well using the quaternary AlInGaN MQB EBL also increased the optical output power and optical intensity.     

Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells

Considering the strong built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations and the intrasubband relaxation, we investigate the linear and nonlinear intersubband optical absorptions in In_xGa_1-xN/Al_yGa_1-yN strained single quantum wells (QWs) by means of the density matrix formalism. Our numerical results show that the strong BEF is on the order of MV/cm, which can be modulated effectively by the In composition in the QW. This electric field greatly increases the electron energy difference between the ground and the first excited states. The electron wave functions are also significantly localized in the QW due to the BEF. The intersubband optical absorption peak sensitively depends on the compositions of In in the well layer and Al in the barrier layers. The intersubband absorption coefficient can be remarkably modified by the electron concentration and the incident optical intensity. The group-III nitride semiconductor QWs are suitable candidate for infrared photodetectors and near-infrared laser amplifiers.     

Nonlinear optical rectification in parabolic quantum dots in the presence of electric and magnetic fields

The optical rectification (OR) coefficient in a parabolic quantum dots (QDs) subject to applied electric and magnetic fields is theoretically investigated in the framework of the compact-density-matrix approach and an iterative method. The confined wave functions and energies of electrons in the QDs are calculated in the effective-mass approximation. Numerical results are presented for typical GaAs/AlGaAs parabolic QDs. These results show that the OR coefficient strongly depends on the radius of QDs and the magnitude of electric and magnetic fields. And the peak shifts to the aspect of high energy when considering the influence of electric and magnetic fields.     

Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Based on the effective-mass approximation, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions, coupled QDs structure parameters and applied electric field. The applied electric field induces an asymmetric distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located at the center of the right dot, the donor binding energy has a maximum value with increasing the dot height. Moreover, the donor binding energy is the largest and insensitive to the large applied electric field (F?400 kV/cm) when the impurity is located at the center of the right dot in ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs. In addition, if the impurity is located inside the right dot, the donor binding energy is insensitive to large middle barrier width (Lmb?2.5 nm) of ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs.     

量子阱共振腔增强型光电探测器的高功率特性

通过测量1.55 μm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性.分析了光电流的产生机制,测量了1.064 μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应.从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素.     

Laser nanotraps and nanotweezers for cold atoms: 3D gradient dipole force trap in the vicinity of scanning near-field optical microscope tip

Using a two-dipole model of an optical near-field of scanning near-field optical microscope tip, i.e., taking into account contributions of magnetic and electric dipoles, we propose and analyze a new type of 3D optical nanotrap found for certain relations between electric and magnetic dipoles. Electric field attains a minimum value in vacuum in the vicinity of the tip and hence such a trap is quite suitable for manipulations with cold atoms.     

Quantum-Confined Stark Effects in a Single GaN Quantum Dot

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.     

Nonlinear optical rectification in cubical quantum dots

The optical rectification (OR) coefficient for cubical quantum dots (CQDs), with an applied electric field is theoretically investigated in the framework of the compact-density-matrix approach and an iterative method. The confined wave functions and energies of electrons in the CQDs are calculated in the effective-mass approximation. Numerical calculations are presented for typical GaAs/AlAs CQDs. The results show that the calculation for OR coefficient in the CQDs system can reach a magnitude of , two orders higher than that in the spherical quantum dots system. The OR coefficient strongly depends on the length of CQDs and the magnitude of electric field. And the peak shifts to the aspect of high energy when considering the electric field.     

Measurement of the frequency modulation transfer function of a laser using a Mach–Zehnder interferometer

A technique is presented for determining the frequency modulation transfer function of a laser. The method is based on a Mach–Zehnder interferometer, with a significant difference in the optical path lengths of the two arms. A frequency-modulated laser beam incident on the interferometer produces a phase-modulated photocurrent signal with an effective modulation index that is related to the amplitude of the optical frequency modulation. Techniques for determining both the amplitude and the phase of the optical frequency modulation from the photocurrent signal are described.     

Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

The binding energies of the hydrogenic impurity in wurtzite InGaN coupled quantum dots (QDs) are calculated by means of a variational method, considering the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located in the center of the left dot, the donor binding energy is largest and insensitive to the barrier height of the wurtzite InGaN coupled QDs.     

Hydrogenic impurity ground state in quantum well: the envelope function revisited

We present a new variationnal method for calculating the ground state energy of an electron bound to an impurity located in a quantum well. This method relies on an envelope function which is determined exactly from a formal minimization procedure. The obtained energies are lower by as much as 10% than the ones found by the widely used free electron envelope function. Their large width limits are reached with exponentially small corrections as they should. We also find that, except for narrow wells, the shape of these exact envelope functions strongly depends on the impurity position, being consequently quite different from the usual free electron ones. In order to discuss the improvements brought by our new procedure in the most striking way, we have used a model semiconductor quantum well with infinite barrier height and simplified band structure. Extensions can be made to finite barrier and more realistic band structures, following the same technique. Received 11 December 2000     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Local fields close to the surface of nanoparticles and aggregates of nanoparticles

A refined discussion of the near-field scattering of spherical nanoparticles and the electromagnetic fields close to the particle surface is given. New results for the dependence on the distance from the surface and the angular distribution of the scattered light in the near-field are given. It will be shown that the radial component of the electric field leads to striking differences in the phase functions in the near-field and the far-field. Exemplary computations are presented for Ag and Au particles with different size. In a second part the discussion is extended to assemblies of spherical Ag and Au nanoparticles. It will be shown that large near-fields at wavelengths commonly used in SERS experiments are obtained for aggregates. In the near-field scattering intensity “hot spots” mark regions between particles in the aggregate where the near-field is particularly high. Received: 4 May 2001 / Revised version: 20 July 2001 / Published online: 19 September 2001     

Mid-infrared optical resonances in quantum dot photodetectors coupled with metallic gratings with different aperture diameters

The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled Ge quantum dots in multilayer structures, which are near-field coupled to the adjacent nanoplasmonic arrays of subwavelength holes in metallic films. It is shown that photocurrent and near-field spectra consist of several sets of peaks, which are attributted to surface plasmon waves, localized surface plasmon modes or diffractive Rayleigh anomaly depending on the hole diameter and the angle of incidence θ. We find that for small holes the greatest contribution to the photocurrent enhancement is due to the excitation of the surface plasmon-polariton waves for all θ. As the hole diameter is increased and becomes comparable with the array periodicity, the normal-incident photoresponse improvement is provided by the Rayleigh anomaly. With the increase of incident angle, the photocurrent enhancement is supposed to arise from coupling of the localized shape resonance and propagating plasmon modes.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.