Shell thickness dependence of exciton trapping in colloidal core/shell nanorods

We quantitatively investigated, by time-resolved photoluminescence (PL) spectroscopy, the shell thickness dependence of exciton trapping and its effects on the PL quantum yield (QY) in colloidal CdSe/CdS/ZnS core/shell quantum rods. The defects passivation, due to a thin shell (0.6 monolayer), leads to a 2 times reduction of the trapping from both emitting and high-energy excited states, thus explaining the observed 4.3 times increase of the PL QY. Moreover, the QY decrease in the thick shell (1.3 monolayers) sample is fully explained in terms of increased trapping from the emitting states, which is ascribed to new defects caused by the strain relaxation at the core-shell interface.     

Evolution of Luminescence with Shell's Thickness in Colloidal CdSe/CdS Core/Shell Quantum Dots

We synthesize colloidal CdSe/CdS core/shell quantum dots with different shell thicknesses, and there are five samples including CdSe core dots, and CdSe/CdS core/shell dots with 1-4 CdS layers. X-ray diffraction and Raman measurements indicate that the stress in CdSe core becomes stronger with the increasing shell thickness, and the optical measurements show that when the shell becomes thicker, the photoluminescence quantum yield is enhanced, and the radiative decay is also expedited. The temperature-dependent optical spectra are measured. The relation between the microstructure and the optical properties is discussed.     

Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Zinc oxide doped with Al (AZO) thin films were prepared on borosilicate glass substrates by dip and dry technique using sodium zincate bath. Effects of doping on the structural and optical properties of ZnO film were investigated by XRD, EPMA, AFM, optical transmittance, PL and Raman spectroscopy. The band gap for ZnO:Al (5.0 at. wt.%) film was found to be 3.29 eV compared with 3.25 eV band gap for pure ZnO film. Doping with Al introduces aggregation of crystallites to form micro-size clusters affecting the smoothness of the film surface. Al³⁺ ion was found to promote chemisorption of oxygen into the film, which in turn affects the roughness of the sample. Six photoluminescence bands were observed at 390, 419, 449, 480, 525 and 574 nm in the emission spectra. Excitation spectra of ZnO film showed bands at 200, 217, 232 and 328 nm, whereas bands at 200, 235, 257 and 267 nm were observed for ZnO:Al film. On the basis of transitions from conduction band or deep donors (CB, Zn_i or V_OZn_i) to valence band and/or deep acceptor states (VB, V_Zn or O_i or O_Zn), a tentative model has been proposed to explain the PL spectra. Doping with Al³⁺ ions reduced the polar character of the film. This has been confirmed from laser Raman studies.     

Characteristics of photoluminescence and Raman spectra of InP doped silica fiber

We fabricated a silica optical fiber doped with InP sandwiched in the core and the inner cladding layers by using the conventional modified chemical vapor deposition process. We presented the experimental X-ray analysis on the optical properties and found that compound InP was contained in the fiber core after annealing process. Broadband photoluminescence observed in InP doped fiber was well coincided with those coming from the recombination of deep levels in InP. The occurrence of temperature-dependent photoluminescence both at the lower and room temperature would be related with the localized defects and their confinement in the micro-network structure of Si-O-Si. The Raman spectra reveal that Si-O-In vibration would disorder the silica ring structures and enervate their vibrations.     

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

We report on the optical property investigation of SiGe nanocrystals (NCs) prepared by electrochemical anodization (ECA) of SiGe layer grown by ultrahigh vacuum chemical vapor deposition (UHVCVD). At room temperature, SiGe NCs with higher Ge content demonstrate a redshift of the photoluminescence (PL) peak compared to Si NCs. It was found that the surface chemical composition, density, and the size of the SiGe NCs were very sensitive to the annealing conditions. Various spectroscopy measurements such as PL, FTIR, and XPS have been carried out to reveal the mechanism of the PL peak transition. The results indicated that the PL peak position was determined by two major factors, namely, interface state density and the size of SiGe NCs. It was shown that the higher the interface state density, the more significant the redshift of the peak position. While the smaller the size of the SiGe NCs, the more significant the quantum size effects become, resulting in the blueshift of the PL peak position.     

CdSe/CdS核壳纳米晶微波水热法一步合成与发光光谱分析

采用微波水热法一步合成了核壳结构的CdSe/CdS纳米晶,讨论了巯基丙酸中S^2-的释放过程对纳米晶生长的影响。XRD和Raman光谱结果表明,140℃合成温度下获得了CdSe/CdS核壳结构的纳米晶。FTIR光谱结果表明,巯基丙酸随时间的分解有助于CdS壳层的形成。PL光谱呈现出CdSe纳米晶的带间发射和缺陷发射,随着核壳结构的形成,CdSe纳米晶的表面缺陷被抑制,相关的荧光发射减弱。     

Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

Tuning the optical properties of Fe-Au core-shell nanoparticles with spherical and spheroidal nanostructures

Present research interest is to highlight on the manufacturing of core-shell nanoparticles because of core activity with unique properties and surface modification by a shell in the diverse fields (e.g. optoelectronic, catalysis and magneto-optics). In addition, the combined optical properties of magnetic-plasmonic core-shell NPs make them ideal candidates for many applications in biomedical fields. The influence of Fe-core and Au-shell for the formation of the core-shell viz. spherical and spheroidal nanostructures is studied using the discrete dipole approximation method. DDA is an approximation method and its accuracy is compared to Mie theory results for spherical core-shell NPs as Mie theory gives the exact solution to spherical targeted NPs. DDA calculations are further extended to spheroidal core-shell nanostructures. It is observed that the localized surface plasmon resonance (LSPR) peak position in considered core-shell nanostructures is enhanced by changing the cores and shell thickness in the core-shell spherical nanostructures and aspect ratio as well as shell thickness in spheroidal core-shell nanostructures. The absorption spectra are found between 363–788 nm wavelength ranges and can be tuned into UV-visible-near-infrared region of the electromagnetic (EM) spectrum in accordance with desired applications. It has been found that the Fe@hollow@Au and prolate core-shell nanostructures show enhancement to LSPR peaks, bandwidth and their corresponding intensities in comparison to other considered spherical and spheroidal core-shell nanostructures. Tunability in core size, shell thickness, aspect ratio, and configuration will open new potential uses of suitable magnetic-plasmonic core-shell nanostructures in cancer therapy, tissue engineering, drug delivery, and many more of biomedical fields.     

Characterization of nanocrystalline gold/DLC composite films synthesized by plasma CVD technique

Composite films containing gold nanoparticles embedded in diamond-like carbon (Au-DLC) matrix were deposited on glass and Si (1 0 0) substrates by using capacitatively coupled plasma (CCP) chemical vapour deposition technique (CVD). Particle size and metal volume fraction were tailored by varying the relative amount of argon in the methane + argon gas mixture in the plasma. Optical constants of the films were evaluated. Bonding environment in these films were obtained from Raman and Fourier transformed infrared spectra (FTIR) studies. Blue-shift of the surface plasmon resonance peak in the optical absorbance spectra of the films could be associated with the reduction of the particle size while red shift was observed with the increase in volume fraction of metal particles in the DLC films. Absorption spectra recorded in the reflection mode indicated dichromatism in these films.     

水溶性CdTe/CdS纳米晶表面SiO2壳层的反相胶束法包覆

"提出了一种水相中制备CdTe/CdS核壳结构纳米粒子的方法.用Te粉作为碲源,用Na2S作为硫源,在50 ℃下制备了CdTe/CdS核壳结构纳米粒子. 用紫外可见吸收光谱和荧光光谱分析了CdS壳层对CdTe核的影响. 随CdS壳层厚度的增加,紫外可见吸收光谱和荧光光谱均发生了红移. CdS壳层厚度较薄时,CdTe/CdS纳米晶的荧光强度较CdTe纳米粒子有显著提高;而CdS壳层厚度较厚时,CdTe/CdS纳米晶的荧光强度会逐渐降低. 用反相胶束法在CdTe/CdS核壳结构纳米粒子的表面包被一层SiO2,     

Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa₅Se₈. Twelve peaks were detected from the room-temperature Raman spectra with the A₁ mode around 160 cm⁻¹. Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa₅Se₈ single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765 eV was observed at 10 K in the PL spectra of CuGa₅Se₈ single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-to-impurity (BI) recombination.     

Blue luminescent silicon nanocrystals prepared by short pulsed laser ablation in liquid media

The pulsed laser processing in liquid media is an attractive alternative to produce room temperature luminescent silicon nanocrystals (Si-ncs). We report on a blue luminescent Si-ncs preparation by using nanosecond pulsed laser (Nd:YAG, KrF excimer) processing in transparent polymer and water. The Si-ncs fabrication is assured by ablation of crystalline silicon target immersed in liquids. During the processing and following aging in liquids, oxide based liquid media, induce shell formation around fresh nanocrystals that provides a natural and stable form of surface passivation. The stable room temperature blue-photoluminescent Si-ncs are prepared with maxima located around ∼440 nm with corresponding optical band gap around ∼2.8 eV (∼430 nm). Due to the reduction of surface defects, the Si-ncs preparation in water, leads to a narrowing of full-width-half-maxima of the photoluminescence spectra.     

The structure and photoluminescence properties of Cr-doped SiC films

Cr-doped SiC films are prepared by the RF-magnetron sputtering technique on Si substrates with a composite target of a single-crystalline SiC containing several Cr pieces on the surface. The as-deposited films are annealed in the temperature of 1000 °C under nitrogen ambient. The structure of the samples has been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman scattering measurement. The results show that the SiC crystal is formed and that majority of Cr doped in the SiC resulted in the formation of the C clusters. Then the photoluminescence (PL) spectra of the samples are observed in the visible range at room temperature. The optical properties of the samples have also been discussed briefly. We attribute the origin of the 412-nm PL band to a kind of C cluster center.     

Poly(N-vinyl carbazole)-grafted multiwalled carbon nanotubes: Synthesis via direct free radical reaction and optical limiting properties

In this work, samples of poly(N-vinyl carbazole) (PVK)-grafted multiwalled carbon nanotubes (MWCNTs) were synthesized via free radical reaction. The ready-made PVK was allowed to react directly with MWCNTs at 70 °C in the presence of azo-bis-isobutyronitrile (AIBN). The purified deep grey products, which can dissolve in common organic solvents such as chloroform and 1,2-dichlorobenzene (DCB), were then characterized by FTIR spectra, TEM, TGA, elemental analysis, XPS, UV-vis spectra and Raman spectra. It was confirmed that PVK chains were grafted onto the surface of the carbon nanotubes (CNTs). The optical limiting properties of these PVK-grafted MWCNTs samples were investigated by open-aperture z-scan method. All of the samples of PVK-modified carbon nanotubes in chloroform showed optical limiting behavior better than that of C₆₀ in toluene.     

核壳结构CdS/ZnS纳米微粒的制备与光学特性

用微乳液法制备CdS纳米微粒 ,以ZnS对其进行表面修饰 ,得到具有核壳结构的CdS/ZnS纳米微粒 .采用X射线衍射 (XRD)、透射电镜 (TEM )表征其结构、粒度和形貌 ,紫外 可见吸收光谱 (UV)、光致发光光谱(PL)表征其光学特性 .制得的CdS近似呈球形 ,直径为 3.3nm ;以XRD和UV证实了CdS/ZnS核壳结构的实现 .研究了不同ZnS壳层厚度对CdS纳米微粒光学性能的影响 ,UV谱表明随着壳层厚度的增加纳米微粒的吸收带边有轻微的红移 ,同时短波吸收增强 ;PL谱表明壳层ZnS的包覆可减少CdS纳米微粒的表面缺陷 ,带边直接复合发光的几率增大 ,具有合适的壳层厚度时发光效率大大提高 .     

Direct observation of dark exciton states in single carbon nanotubes

We have studied magneto-photoluminescence (PL) spectra of a single carbon nanotube at low temperatures. A single PL peak arising from optically allowed (bright) exciton state was observed under the zero-magnetic field, and an additional PL peak from optically forbidden (dark) exciton state was enhanced with increasing the magnetic field. Excitons populate in the lower dark state at low temperatures, and the optically forbidden transition is observed due to the Aharonov-Bohm effect.     

Synthesis and optical properties of N-In codoped ZnO nanobelts

N-In codoped ZnO nanobelts were successfully synthesized via high-temperature chemical vapor deposition for the first time, using the mixture of In/ZnO as a precursor. The EDX spectrum showed that In was introduced into ZnO nanobelts. In order to better understand the optical properties of N-In codoped ZnO nanobelts, the Raman and low-temperature PL spectra of the undoped, In-doped and N-In codoped ZnO nanostructures were measured. By contrasting, N is incorporated into the nanobelts. The temperature dependent photoluminescence (PL) spectra were investigated. Their PL spectra in the temperature from 9 K to room temperature were dominated by an A^oX emission of excitons bound to 2No-In_Zn acceptor complexes. The dissociation energy of the acceptor complexes is estimated to be 89-112 meV.     

Infrared and Raman spectroscopies of InP/II–VI core-shell nanoparticles

We use infrared (IR) and Raman spectroscopies to investigate the optically active phonon modes in InP nanoparticles and InP/II–VI core-shell nanoparticles fabricated by similar colloidal chemistry methods. The IR transmission spectra of several InP nanoparticle samples exhibit a common absorption feature, which we assign to the Fröhlich mode. The Raman results for the same samples show transverse and longitudinal optical phonon peaks, and scattering strength in between due to surface optical (SO) modes. Infrared spectra of the InP/ZnSe core-shell nanoparticles () exhibit three absorption features, one due to the InP core, and the others associated with the ZnSe shell layer. Raman measurements (12–292 K) also show three phonon-related peaks, whose intensities vary sharply with temperature. The frequencies of the IR and Raman lines are in approximate accord with dielectric continuum theory.     

Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.     

Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots

Photoluminescence (PL) measurements have been carried out to investigate the annealing effects in one-period and three-periods of InAs/GaAs self-assembled quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. After annealing, the PL spectra for the annealed InAs/GaAs QDs showed dramatic blue shifts and significant linewidth narrowing of the PL peaks compared with the as-grown samples. The variations in the PL peak position and the full width at half-maximum of the PL peak are attributed to changes in the composition of the InAs QDs resulting from the interdiffusion between the InAs QDs and the GaAs barrier and to the size homogeneity of the QDs. These results indicate that the optical properties and the crystal qualities of InAs/GaAs QDs are dramatically changed by thermal treatment.