Evidence for a finite-temperature phase transition in a bilayer quantum Hall system

We study the Josephson-like interlayer tunneling signature of the strongly correlated nuT=1 quantum Hall phase in bilayer two-dimensional electron systems as a function of the layer separation, temperature, and interlayer charge imbalance. Our results offer strong evidence that a finite temperature phase transition separates the interlayer coherent phase from incoherent phases which lack strong interlayer correlations. The transition temperature is dependent on both the layer spacing and charge imbalance between the layers.     

Exponential suppression of interlayer conductivity in very anisotropic quasi-two-dimensional compounds in high magnetic field

It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is developed to describe this effect, and the calculation of the temperature and field dependence of interlayer magnetoresistance is performed. The results obtained agree well with the experimental data in GaAs/AlGaAs heterostructures and in strongly anisotropic organic metals. The proposed theory allows to use the experiments on interlayer magnetoresistance to investigate the electron states, localized by magnetic field and disorder.     

Tunable quantum capacitance and magnetic oscillation in bilayer graphene device

We address the quantum capacitance of a bilayer graphene device in the presence of Rashba spin–orbit interaction (SOI) by applying external magnetic fields and interlayer biases. Quantum capacitance reflects the mixing of the spin-up and spin-down states of Landau levels and can be effectively modulated by the interlayer bias. The interplay between interlayer bias and Rashba SOI strongly affects magnetic oscillations. The typical beating pattern changes tuned by Rashba SOI strength, interlayer bias energy, and temperature are examined as well.     

The effect of Pd doped in Ru layer on theinterlayer coupling in Co／RuPd multilayers

2.0nmCo/tnmRu层间反磁铁耦合 磁性录音 振动交换 添加效应2.0nmCo/tnmRu1-xPdx multilayers with x=0, 0.05, 0.08, 0.24, 0.39 and 0.48 were prepared by magnetron sput-tering. The spacer layer thickness of both Ru (before doping Pd) and RuPd (after doping Pd) varies from 0.2nm to 1.6nm. Two effects have been investigated: (1) the dependence of the interlayer coupling on the thickness of Ru1-xPdx as a function of x and (2) the dependence of the interlayer coupling on Pd doping density, x, as a function of thickness of Ru1-xPdx. Our results indicate that the interlayer coupling is strongly dependent on the doping density and the spacer layer thickness. The saturation field Hs increases when very low concentration of Pd doped in the Ru layers and a suitable spacer thickness are adopted.     

Pattern Synchronization in a Two-Layer Neuronal Network

Pattern synchronization in a two-layer neuronal network is studied. For a single-layer network of Rulkov map neurons, there are three kinds of patterns induced by noise. Additive noise can induce ordered patterns at some intermediate noise intensities in a resonant way; however, for small and large noise intensities there exist excitable patterns and disordered patterns, respectively. For a neuronal network coupled by two single-layer networks with noise intensity differences between layers, we find that the two-layer network can achieve synchrony as the interlayer coupling strength increases. The synchronous states strongly depend on the interlayer coupling strength and the noise intensity difference between layers.     

Tunable anticrossing of gated and ungated plasma resonances and enhancement of interlayer terahertz electric field in an asymmetric bilayer of density-modulated two-dimensional electron gases

We study theoretically the terahertz (THz) response of a bilayer of density-modulated two-dimensional electron gases, which we employ to model the actual double-quantum-well electron channel of a grid-gated field-effect transistor in which strong THz photoresponse was recently observed. We have shown that such a system can be driven into the anticrossing regime between gated and ungated plasma resonances by tuning the gate voltage. The amplitude of the interlayer THz electric field in the ungated (double-layered) portions of the channel increases dramatically in the anticrossing regime. This strong interlayer THz electric field may strongly affect interlayer electron tunneling which, in turn, may contribute to the physical mechanism underlying the strong THz photoresponse observed in recent experiments.     

Low-frequency interlayer vibration modes in two-dimensional layered materials

Two-dimensional (2D) layered materials have been attracted tremendous research interest because of their novel photoelectric properties. If a single atomic layer instead of individual atoms is taken as a rigid motion object, two unique interlayer vibrations, i.e. compression/breathing and shear motions, at ultra-low frequencies can be expected and actually have been observed in many layered materials. The vibrations stem from the interlayer van der Waals interaction and can be well described by a conventional linear-chain model in most cases. The vibration frequencies strongly depend on layer thickness, which enables an accurate determination of layer numbers. A quick and nondestructive determination of flake thickness is particularly important for the materials, since the physical properties can be dramatically changed in the cases of several atomic layers. As a measure of interlayer coupling, the low-frequency modes are also sensitive to the stacking methods of atomic layers and the overlapping of different kinds of 2D materials. This allows the modes to play a key role in the applications like van der Waals heterojunctions. In this paper, we will give a brief review on the experimental observations and theoretical understanding of the interlayer modes in several typical 2D systems, as well as their actual and potential applications.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

The influence of interlayer exchange coupling on magnetic ordering in Fe/V superlattices

The relation between the interlayer exchange coupling and magnetic order is addressed, using Fe/V(0 0 1) superlattices as a model system. Large decrease in the ordering temperature (T_c) is observed with decreasing interlayer exchange coupling. The effective exponents of the magnetization were determined to be larger than 0.5 for all the samples, which is strongly deviating from the classical values of both two- and three-dimensional systems. This effect can partially be ascribed to the presence of boundaries, invoked by the finite number of magnetic layers.     

Magnetization Configuration in Magnetic Trilayer System with Out-of-Plane Component Defect

The equilibrium magnetization configuration, the inducing field and the coercive field in trilayer magnetic materials having an out-of-plane anisotropy defect interlayer between two in-plane anisotropy layers are discussed by both analytical and numerical calculations based on a micromagnet approach. It is shown that the above physical parameters strongly depend on the defect layer such as its thickness and exchange stiffness etc., as well as on the applied fields. It is found that there is a special thickness of defect layer, in which the inducing effect begin to occur, and the critical behavior of inducing field in the vicinity of the special thickness is linearly characterized. Particularly, the magnetic hysteresis shows typical soft hysteresis shape, even though the host material is composed of hard magnets, and the coercivity increases with increasing the thickness of the interlayer.     

Interlayer quasiparticle transport in the vortex state of josephson coupled superconductors

We calculate the dependence of the interlayer quasiparticle conductivity, sigma(q), in a Josephson coupled d-wave superconductor on the magnetic field B parallelc and the temperature T. We consider a clean superconductor with resonant impurity scattering and a dominant coherent interlayer tunneling. When pancake vortices in adjacent layers are weakly correlated, at low T the conductivity increases sharply with B over a field scale determined by the impurity scattering, before reaching an extended region of slow linear growth. At high T the conductivity initially decreases and then reaches the same linear regime. For correlated pancakes, sigma(q) increases much more strongly with the applied field.     

Modification of current-voltage characteristics of planar organic systems by nm-thick copper phthalocyanine or perylene dye interlayer

The effect of a nm-thick interlayer of copper phthalocyanine (CuPc) or perylene dye (MePTCDI) on currentvoltage characteristics of planar organic systems is discussed in this work. The MePTCDI layer in the ITO/MePTCDI/CuPc/Au system strongly reduces reverse dark current by blocking injection of holes from ITOinto CuPc leading to high values of rectification ratio. The CuPc interlayer in the ITO/CuPc/MePTCDI/Ag system causes a strong reduction in electron injection from ITOand reverses a forward polarity. Modification of current-voltage characteristics of illuminated systems with an interlayer of MePTCDI or CuPc is associated with a strong photovoltaic effect. This results from efficient excition dissociation at the CuPc/MePTCDI interface. Saturation current, determined by this process of charge carrier photogeneration, can be observed at particular voltage polarity.     

3,4,9,10-Perylenetetracarboxylicdiimide as an interlayer for ultraviolet organic light emitting diodes

Ultraviolet organic light emitting diodes with 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI) interlayer have been achieved. The emission spectrum and intensity were strongly dependent on the thickness of PTCDI interlayer, in spite of the fact that PTCDI has neither much lower HOMO nor much higher LUMO level, which is considered necessary for efficient charge blocking layers. The influence of PTCDI layer was investigated in three different device configurations and obtained results are discussed. For optimal device configuration, OLED with emission centered at 370 nm and turn-on voltage of 4.5 V is obtained.     

W过渡层结合界面对金刚石薄膜在WC-6%Co上的附着力的影响

 在微波等离子体化学气相沉积装置中,采用负偏压形核等方法,研究两种不同的W过渡层/基体结合界面对金刚石薄膜与WC-6%Co附着力的影响。采用氢等离子体脱碳、磁控溅射镀W、高偏压碳化等方法,在YG6衬底表面形成化学反应型界面,W膜在碳化时和基体WC连为一体,极大地增加了W膜与基体的附着力,明显优于直接镀钨、碳化形成的物理吸附界面。在高负偏压下碳化,能提高表面粗糙度,增加膜与基体机械钳合,而负偏压形核增加核密度,从而增加膜与基体的接触面积,结果极大地提高了金刚石薄膜的附着力。     

Persistence to high temperatures of interlayer coherence in an organic superconductor

The interlayer magnetoresistance rho(zz) of the organic metal kappa-(BEDT-TTF)(2)Cu(NCS)(2) is studied in fields of up to 45 T and at temperatures T from 0.5 to 30 K. The peak in rho(zz) seen in in-plane fields, a definitive signature of interlayer coherence, remains to Ts exceeding the Anderson criterion for incoherent transport by a factor approximately 30. Angle-dependent magnetoresistance oscillations are modeled using an approach based on field-induced quasiparticle paths on a 3D Fermi surface, to yield the T dependence of the scattering rate tau(-1). The results suggest that tau(-1) does not vary strongly over the Fermi surface, and that it has a T(2) dependence due to electron-electron scattering.     

Spin transition in strongly correlated bilayer two-dimensional electron systems

Using a combination of heat pulse and nuclear magnetic resonance techniques, we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at nu(T) = 1 in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usual assumption, the transition is attended by a change in the electronic spin polarization.     

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained.     

Resonantly enhanced tunneling in a double layer quantum hall ferromagnet

The tunneling conductance between two parallel 2D electron systems has been measured in a regime of strong interlayer Coulomb correlations. At total Landau level filling nuT=1 the tunnel spectrum changes qualitatively when the boundary separating the compressible phase from the ferromagnetic quantized Hall state is crossed. A huge resonant enhancement replaces the strongly suppressed equilibrium tunneling characteristic of weakly coupled layers. The possible relationship of this enhancement to the Goldstone mode of the broken symmetry ground state is discussed.