KDP/PEDOT:PSS mixture as a new alternative in the fabrication of pressure sensing devices

In this work we studied the mixture of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), a commercial polymer, with monobasic potassium phosphate (KDP), a piezoelectric salt, as a possible novel material in the fabrication of a low cost, easy-to-make, flexible pressure sensing device. The mixture between KDP and PEDOT:PSS was painted in a flexible polyester substrate and dried. Afterwards, I × V curves were carried out. The samples containing KDP presented higher values of current in smaller voltages than the PEDOT:PSS without KDP. This can mean a change in the chain arrays. Other results showed that the material responds to directly applied pressure to the sample that can be useful to sensors fabrication.     

The effect of lanthanide impurities on the physical properties of half-metallic ferromagnet Co2MnSi

The paper reports some preliminary results on possible incorporation of Ho in Co₂MnSi lattice. In addition, the effect of holmium substitution on Mn sites is analyzed on the basis of self-consistent electronic structure calculations.     

Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices

Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.     

Metal ion induced room temperature phase transformation and stimulated infrared spectroscopy on TiO2-based surfaces

Raman and infrared spectroscopy are used to demonstrate (1) the high spin metal ion induced room temperature transformation of anatase to rutile TiO₂ and (2) the phenomena of stimulated IR spectroscopy induced by simultaneous nitrogen doping and high spin metal ion seeding of a TiO₂ nanocolloid lattice.     

A conducting polymer-silicon heterojunction as a new ultraviolet photodetector

We discuss on the development and characterization of a p-n heterojunction of polyaniline-silicon as a photo detector for the ultraviolet (UV) region. The hybrid heterojunction consists of micro and nano-films (<300 nm thick) of polyaniline deposited on the top of a silicon wafer through the spin-coating technique, where in the backside of silicon and on top of polyaniline, aluminum and gold were respectively deposited by evaporation to make the electric contacts. The electrical characteristics of the devices present excellent reproducibility and high rectification ratio. In addition, the spectroscopic and the photon response analysis of the devices strongly indicates that it can be used as a broad band photon detector, with good sensitivity especially in the UV region ≈2.0-3.5 eV, where it presents enhanced sensitivity (≈200%) when compared to commercial all-silicon diodes such as the OPT 301 UV detector.     

Topographical studies of semiconductor surfaces by using a combined photo-acoustoelectric method

A simple and rapid nondestructive method for a qualitative analysis of the electronic topography of semiconductor surfaces is presented, which is based on the transverse acoustoelectric effect. The method allows to follow the spatial distribution of the density and the relaxation time of energy states at the surface of the semiconductor and can be used to check its homogeneity as well as to visualize surface electronic structures.     

Characterization of water exposed plasma sprayed oxide coating materials using XPS

The surface compositions and oxidation states of non-exposed and water exposed plasma sprayed oxide coatings were studied using X-ray photoelectron spectroscopy (XPS). Coating materials were TiO₂, Al₂O₃ and Cr₂O₃ and their mixtures. Water exposures were performed for free standing coating disks at mild electrolyte (1 mmol NaCl solution) at pH 4, 7 and 9. The exposure time was two weeks.It was observed that pure plasma sprayed TiO₂ material was chemically stable over whole experiment pH range and only slight surface hydroxylation was observed for this material.In case of plasma sprayed Al₂O₃ materials the surface O/Al ratio increased considerably during water exposure especially at exposure pH 7. This was probably result of surface conversion to hydrous form. No surface oxidation state changes were observed for this material.The non-exposed Cr₂O₃ materials contained both Cr(III) and Cr(VI) oxides. The water exposures increased the surface oxygen and Cr(VI) contents at the expense of Cr(III). The most probable reason for that was the dissolution of surface Cr(VI) oxide phase during water exposures and the (re)adsorption of dissolved Cr(VI) species back to the surface.     

Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X‐ray diffraction in free‐standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X‐ray irradiation if additionally an external static electric field is applied.

     

Characterization of oxide layers formed on electrochemically treated Ti by using soft X-ray absorption measurements

The oxide layers of electrolytic oxidized titanium (Ti) were characterized using Ti L_2,3 and O K edge X-ray absorption. The spectra show that the structure of the oxide layers that are formed during a 1 min treatment are dependent on the concentration of the electrolyte (H₂SO₄ or Na₂SO₄) with which the Ti surface was treated, and also on the magnitude of the potential that was applied during the anodic oxidation process (100 V or 150 V). It is found that a potential of 150 V and an electrolyte concentration of 0.5 M or 1.0 M produces a layer of TiO₂ having rutile crystal structure.     

Self-consistent electronic structure of quantum wells by invariant embedding method

A new approach based on the invariant embedding method for the self-consistent calculation of electronic structure of quantum wells is presented and is applied to both neutral quantum well and parabolic quantum well. Numerical results obtained for these structures agree very well with those of previous theoretical and experiment studies. The present approach is expected to lead to a more efficient and stable scheme for the calculation of electronic band structure of quantum structures. Realistic boundary conditions are naturally taken into account in the present calculation which provides a convenient way for studying boundary effects. Received 21 September     

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Ultrathin silicon dioxide (SiO₂) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO₂/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO₃), and SiO₂ thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.      

Characterization of oxide coatings formed on tantalum by plasma electrolytic oxidation in 12-tungstosilicic acid

Oxide coatings were formed on tantalum by plasma electrolytic oxidation (PEO) process in 12-tungstosilicic acid. The PEO process can be divided into three stages with respect to change of the voltage-time response. The contribution of electron current density in total current density during anodization results in the transformation of the slope of voltage-time curve. The surface morphology, chemical and phase composition of oxide coatings were investigated by AFM, SEM-EDX, XRD and Raman spectroscopy. Oxide coating morphology is strongly dependent of PEO time. The elemental components of PEO coatings are Ta, O, Si and W. The oxide coatings are partly crystallized and mainly composed of WO₃, Ta₂O₅ and SiO₂. Raman spectroscopy showed that the outer layer of oxide coatings formed during the PEO process is silicate tungsten bronze.     

Characterization of native and anodic oxide films formed on commercial pure titanium using electrochemical properties and morphology techniques

Potentiostatically anodized oxide films on the surface of commercial pure titanium (cp-Ti) formed in sulfuric (0.5 M H₂SO₄) and in phosphoric (1.4 M H₃PO₄) acid solutions under variables anodizing voltages were investigated and compared with the native oxide film. Potentiodynamic polarization and electrochemical impedance spectroscopy, EIS, were used to predicate the different in corrosion behavior of the oxide film samples. Scanning electron microscope, SEM, and electron diffraction X-ray analysis, EDX, were used to investigate the difference in the morphology between different types of oxide films. The electrochemical characteristics were examined in phosphate saline buffer solution, PSB (pH 7.4) at 25 °C. Results have been shown that the nature of the native oxide film is thin and amorphous, while the process of anodization of Ti in both acid solutions plays an important role in changing the properties of passive oxide films. Significant increase in the corrosion resistance of the anodized surface film was recorded after 3 h of electrode immersion in PSB. On the other side, the coverage (θ) of film formed on cp-Ti was differed by changing the anodized acid solution. Impedance results showed that both the native film and anodized film formed on cp-Ti consist of two layers. The resistance of the anodized film has reached to the highest value by anodization of cp-Ti in H₃PO₄ and the inner layer in the anodized film formed in both acid solutions is also porous.     

New fabrication of a strained Si/Si1−yGey dual channel on a relaxed Si1−xGex virtual substrate using a Ge-rich layer formed by oxidation

This paper presents a new method of forming a Si/SiGe dual channel on a Si_0.8Ge_0.2 virtual substrate. Generally, in a CMOS process using a Si/SiGe dual channel, due to several processes involving ion-implantation, annealing and dry-etching after the deposition of the Si/SiGe dual channel, the surface can be damaged, leading to reduced electrical properties. However, if the dual channel is formed during a specific stage of the CMOS process, the defects of the dual channel can be reduced and the thermal stability will be excellent. Therefore, in this paper, a method for minimizing the defects of the dual channel is presented. This method uses the segregation of the Ge in the oxidation process of a SiGe. A Si/SiGe dual channel formed using this method achieved results that were identical to a dual channel deposited using the chemical vapor deposition (CVD) method.