Continuous-wave Nd:YVO4/KTiOPO4 green laser at 542 nm under diode pumping into the emitting level

We report a green laser at 542 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1086 nm Nd:YVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 14.5 W, as high as 1.33 W of CW output power at 542 nm is achieved. The optical-to-optical conversion efficiency is up to 9.2%, and the fluctuation of the green output power was better than 3.8% in the given 30 min.     

Diode-pumped Nd:YVO4 laser emitting at 1074 nm based on the 4F3/2-4I11/2 transition

We report a diode-pumped Nd:YVO₄ laser emitting at 1074 nm, based on the ⁴ F _3/2-⁴ I _11/2 transition, generally used for a 1064 nm emission. A power of 323 mW at 1074 nm has been achieved in continuouswave (CW) operation with a fiber-coupled laser diode emitting 18.2 W at 808 nm. Intracavity second-harmonic generation in CW mode has also been demonstrated with a power of 18 mW at 537 nm by using a LiB₃O₅ (LBO) nonlinear crystal.     

Diode-pumped continuous-wave Nd:YAP laser emitting at 1073 nm based on the 4F3/2-4I11/2 transition

We describe the output performances of the 1073 nm ⁴ F _3/2 → ⁴ I _11/2 transition (generally used for a 1064 nm transition) in Nd³⁺:YAlO₃ (Nd:YAP) under in-band pumping with diode laser at the 803 nm wavelength. An end-pumped Nd:YAP crystal yielded 390 mW of continuous-wave (CW) output power for 17.8 W of incident pump power. Moreover, intracavity second-harmonic generation has also been achieved with a power of 38 mW at 536 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The green beam quality factor M ² was less than 1.33. The blue power stability was less 3.5% in 4 h.     

Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level

We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level ⁴F_3/2 of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.     

High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO₄ crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm pumping was 34.9% higher and 12.6% lower than those of 808 nm pumping. A high slope efficiency of 49.1% was achieved under 880 nm pumping, with an optical-to-optical conversion efficiency of 41.7%.     

High-power continuous-wave Nd:GdVO4 slab laser pumped directly into the F3/2 emitting level

95.6 W continuous-wave laser power output in 880 nm LD partially end-pumped Nd:GdVO₄ slab laser with a hybrid resonator is presented. The slope efficiency and optical-to-optical efficiency were 46.5% and nearly 42.6%, respectively. At the output power of 82 W, beam quality M² factors were 1.1 in the unstable direction and 1.36 in the stable direction, respectively.     

Efficient 1061 and 1329 nm laser emission of Nd:CNGG lasers under 885 nm diode pumping into the emitting level

We report an efficiency Nd:CNGG laser operating at 1061 and 1329 nm, respectively, direct pumped by a diode laser at 885 nm for the first time to our knowledge. The maximum outputs of 4.5 and 2.9 W, at 1061 and 1329 nm, respectively, are obtained in a 6-mm-thick 0.5 at % Nd:CNGG crystal with 13.5 W of absorbed pump power at 885 nm, leading to a high slope efficiency with respect to the absorbed pump power of 32.2 and 22.1%. Under traditional pumping at 808 nm, the maximum outputs of 3.9 and 2.7 W, at 1061 and 1329 nm, respectively, are obtained with 15.4 W of absorbed pump power, corresponding to the slope efficiency with respect to the absorbed pump power of 25.2 and 17.9%.     

Actively Q-switched laser performance comparison between Nd:Lu0.15Y0.85VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 mixed crystals

By using acousto-optic (AO) modulator as active Q-switch, the diode-pumped actively Q-switched Nd:Lu_0.15Y_0.85VO₄ and Nd:Lu_0.33Y_0.37Gd_0.3VO₄ lasers are realized. The average output power and the pulse width under different AO repetition rates are measured. The actively Q-switched laser performances for two kind mixed crystals are compared for the first time. The experimental results show that the actively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power in comparison with the actively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser. Due to broader fluorescence line-width, the triple-mixed crystal Nd:Lu_0.33Y_0.37Gd_0.3VO₄ is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

Continuous-wave Nd:GdVO<Subscript>4</Subscript>/LBO laser at 541.5 nm under diode pumping into the emitting level

We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Efficiency intracavity frequency-doubled Nd:CNGG-LBO green laser at 530.5 nm under direct 885 nm pumping into the emitting level

We report an efficient laser emission on the 1061 nm ⁴ F _3/2 to ⁴ I _11/2 transition in Nd:CNGG under the pump with diode laser at 885 nm. Continuous wave (CW) 5.4 W output power at 1061 nm is obtained under 17.4 W of incident pump power; the slope efficiency with respect to the incident pump power was 36.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 1.75 W of green light at 530.5 nm. An optical-to-optical efficiency with respect to the incident pump power was 10.1%.     

Efficient 1047 nm CW laser emission of Nd:YLF under direct pumping into the emitting level

We demonstrate a 1047 nm Nd:LiYF₄ (Nd:YLF) laser by directly pumping into the upper lasing level with a tunable Ti:Sapphire laser. The results obtained for direct upper laser level pumping at 863, 872 and 880 nm of Nd:YLF were compared with traditional 806 nm pump band excitation. Highly efficient 1047 nm continuous-wave (CW) laser emission under direct pumping at 880 nm in an 8 mm thick, 1.0 at.% Nd:YLF crystal is obtained. The slope efficiency is improved from 55.6% for traditional pumping at 806 nm to 76.3% for direct pumping at 880 nm.     

High power diode single-end-pumped Nd:YVO4 laser

A fiber-coupled diode-single-end-pumped Nd:YVO₄ laser with an Nd:YVO₄ crystal of 0.3 at% doping concentration and 3×3×10 mm³ dimensions was reported. 14.850 W of continuous-wave output power in an M² factor of 1.12 was obtained under pump power of 27.365 W, with an optical conversion efficiency of 60.49%, and a slope efficiency of 64.5%.     

Eu3+-based optical centers with a high efficiency of the 5D0 → 7F4 transition in alumina gel films

A record peak luminescence intensity of the ⁵ D ₀ → ⁷ F ₄ transition in Eu³⁺ ions and broadening of their UV excitation band are obtained by doping of Eu-containing alumina gel films with bismuth oxyfluoride and subsequent thermal treatment at T ≥ 700°C. The results obtained are explained by the formation of complex Eu—Bi centers with C _3V symmetry in the Al₂O₃ structure, efficient migration of excitations from EuAlO₃ crystallites to these centers, and the sensitization of the luminescence of the rare-earth activator by Bi³⁺ ions. __________ Translated from Optika i Spektroskopiya, Vol. 98, No. 2, 2005, pp. 224–228. Original Russian Text Copyright ? 2005 by Malashkevich, Shevchenko, Bokshits, Kornienko, Pershukevich.     

钪原子的自电离里德伯能级3d4s(1D2)nf2 D3/2,3d4s(1D2)nf2 F5/2和3d4s(1D2)np2 D3/2<

在多通道量子亏损理论框架下,利用相对论多通道理论,分别在冻结实近似和考虑偶极极化下计算钪原子的J^π=(3/2)^-,(5/2)^-的三个收敛于 3d4s(¹D₂)的自电离里德伯系列的能级.对3d4s(¹D₂)np²D_3/2和3d4s(^{1 关键词： 相对论多通道理论 多通道量子亏损理论 电子-电子关联 自电离里德伯系列}     

LD泵浦的Nd:YVO_4激光器被动式产生近似无衍射绿光

使用连续式输出的砷化镓半导体激光器泵浦的掺钕钒酸钇激光器作为光源,利用磷酸氧钛钾晶体腔内倍频产生波长为532nm的绿光,通过轴棱锥产生了近似无衍射贝塞尔光束。推导了倍频产生的绿光的场分布,并模拟了倍频绿光经过轴棱锥产生的近似无衍射光束的轴向光强分布图和截面光强分布图。通过实验拍摄了距离轴棱锥不同位置的截面光强分布,测量了无衍射贝塞尔绿光的最大无衍射距离和中心光斑直径,实验数据与理论模拟基本吻合。实验结果说明所述方法产生的倍频无衍射绿光具有良好的光束质量,具有应用价值。     

LD泵浦的Nd:YVO4激光器被动式产生近似无衍射绿光

使用连续式输出的砷化镓半导体激光器泵浦的掺钕钒酸钇激光器作为光源,利用磷酸氧钛钾晶体腔内倍频产生波长为532 nm的绿光,通过轴棱锥产生了近似无衍射贝塞尔光束。推导了倍频产生的绿光的场分布,并模拟了倍频绿光经过轴棱锥产生的近似无衍射光束的轴向光强分布图和截面光强分布图。通过实验拍摄了距离轴棱锥不同位置的截面光强分布,测量了无衍射贝塞尔绿光的最大无衍射距离和中心光斑直径,实验数据与理论模拟基本吻合。实验结果说明所述方法产生的倍频无衍射绿光具有良好的光束质量,具有应用价值。     

Spectroscopic and laser properties of Nd:Gd0.8La0.2VO4 crystal

The polarised absorption and fluorescence spectra of Nd:Gd_0.8La_0.2VO₄ crystal are measured and compared to those of Nd:GdVO₄. CW laser properties of diode-pumped Nd:Gd_0.8La_0.2VO₄ crystal operating at fundamental wavelengths of 1.06 and 1.34 μm, as well as when intracavity frequency-doubled to 532 and 670 nm, have been studied. The maximum output powers at 1.06 μm, 1.34 μm, 532 nm and 670 nm are 1.18 W, 671 mW, 206 mW and 42 mW respectively, at a diode-launched pump power of 2.9 W. The threshold pump powers are 80, 267, 7 and 15 mW respectively.     

Compact 7.8-W 1-GHz-repetition-rate passively mode-locked TEM00 Nd:YVO4 laser under 880 nm diode direct-in-band pumping

We demonstrate a compact high-power passively mode-locked TEM₀₀ Nd:YVO₄ laser with 1 GHz repetition rate by 880 nm diode direct-in-band pumping. At the absorbed pump power of 19.9 W, a stable mode-locked output power of 7.8 W was obtained with the pulse width of 21.4 ps and a beam quality factor of M² < 1.5, corresponding to an optical-optical conversion efficiency of 39.2%.