压缩应变载荷下氮化镓隧道结微观压电特性及其巨压电电阻效应

电子器件可控性研究在日益追求器件智能化和可控化的当今社会至关重要. 基于第一性原理和量子输运计算, 本文研究了压缩应变载荷对氮化镓(GaN)隧道结基态电学性质和电流输运的影响, 在原子尺度上窥视了氮化镓隧道结的微观压电性, 验证了其内在的巨压电电阻(GPR)效应. 计算结果表明, 压缩应变载荷可以调节隧道结内氮化镓势垒层的电势能降、内建电场、电荷密度和极化强度, 进而实现对隧道结电流输运和隧穿电阻的调控. 在-1.0 V的偏置电压下, -5%的压缩应变载荷将使氮化镓隧道结的隧穿电阻增至4倍. 本研究展现了氮化镓隧道结在可控电子器件中的应用潜力, 也展现了应变工程在调控电子器件性能方面的光明前景.     

Decoherence in superconducting quantum bits by phonon radiation

We discuss a fundamental limitation for the coherent operation of superconducting quantum bits originating from phonon radiation generated in the Josephson junctions of the device. The time dependent superconducting phase across the junction produces an electric field that couples to the underlying crystal lattice via the piezoelectric effect. We determine the radiation resistance of the junction due to phonon emission and derive substantial decoherence rates for the quantum bits, which are compatible with quality factors measured in recent experiments.     

Modeling of 4H--SiC multi-floating-junction Schottky barrier diode

This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure.     

Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.     

Electric field effects on tunnel magnetoresistance in FM–organic molecule–FM junction

The electronic properties of an organic molecule under external electric field are investigated based on a single band tight-binding model Hamiltonian and the Green's function approach with the Landauer–Büttiker formalism. These properties are studied for a chain of benzene rings (oligophenylene). A self-consistent calculation is adopted to analyze the external electric field effects on the electronic properties of system. It is shown that variation in electron density and HOMO–LUMO gap of the junction are direction depended on the external electric field strength. Our results show that in the presence of external electric field the transmission, current and tunnel magnetoresistance (TMR) decrease, the negative differential resistance occurs.     

新型缓冲层分区电场调制横向双扩散超结功率器件

为了突破传统横向双扩散金属-氧化物-半导体器件(lateral double-diffused MOSFET)击穿电压与比导通电阻的极限关系,本文在缓冲层横向双扩散超结功率器件(super junction LDMOS-SJ LDMOS)结构基础上,提出了具有缓冲层分区新型SJ-LDMOS结构.新结构利用电场调制效应将分区缓冲层产生的电场峰引入超结(super junction)表面而优化了SJ-LDMOS的表面电场分布,缓解了横向LDMOS器件由于受纵向电场影响使横向电场分布不均匀、横向单位耐压量低的问题.利用仿真分析软件ISE分析表明,优化条件下,当缓冲层分区为3时,提出的缓冲层分区SJ-LDMOS表面电场最优,击穿电压达到饱和时较一般LDMOS结构提高了50%左右,较缓冲层SJ-LDMOS结构提高了32%左右,横向单位耐压量达到18.48 V/μm.击穿电压为382 V的缓冲层分区SJ-LDMOS,比导通电阻为25.6 mΩ·cm2,突破了一般LDMOS击穿电压为254 V时比导通电阻为71.8 mΩ·cm2的极限关系.     

Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

高阻氮化镓外延层的异常光吸收

通过光伏谱(PV)的测量发现,采用MOCVD方法生长的非故意掺杂GaN外延膜,电阻较大的样品在带隙内有明显的异常光吸收.吸收峰的能量位置表明这种异常吸收可能与激子有关.在这些高阻样品上制作的MSM型探测器,当入射光照射不同位置,其光谱响应显示了区域不一致性.20 V偏压下反向偏置结处的光谱响应比正向偏置结处的光谱响应大一个数量级左右,峰值响应的位置也发生明显红移现象,红移的能量约为28 meV,并且几乎不随环境温度变化.根据MSM结构的电场分布不均以及带边和激子响应对电场的依赖性不同,MSM型探测器的这种 关键词： GaN 激子 光伏谱 光谱响应     

真空中A-B-A绝缘结构的电场分析

提出了一种变插入层电导率和介电常数的三层(A-B-A)绝缘结构。分析了插入层(A)电导率和介电常数对三层绝缘结构真空-绝缘子-阴极三结合点处和真空-插入层绝缘子(A)-主绝缘子(B)三结合点处电场的影响,结果发现通过控制插入层电导率和介电常数可以有效降低真空-绝缘子-阴极三结合点处的电场又不至于使真空-插入层绝缘子-主绝缘子三结合点处电场过高。考虑了介质表面带电的情况,分析插入层介质表面带不同极性电荷对真空-绝缘子-阴极和真空-插入层绝缘子-主绝缘子两个三结合点电场分布的影响。估计了三层绝缘结构真空沿面闪络电压的变化趋势,发现在插入层电导率或介电常数不断增大时,真空沿面闪络电压会呈现先上升后下降,最后趋于稳定。     

Electric field distribution in polymer light-emitting electrochemical cells

We use electroabsorption spectroscopy and modeling studies to probe the electric field in light-emitting electrochemical cells. At room temperature and constant applied bias, the steady-state internal field is zero for a range of biases. However, when the ions are frozen in place by cooling under steady bias, and the bias is subsequently changed, the profile of the electric potential resembles a typical p-n junction.     

Electric field distribution in the base of semiconductor <Emphasis Type="Italic">p-n</Emphasis> junction diode

An expression for distribution of the electric field in the base of a semiconductor p-n junction diode is obtained valid for arbitrary injection levels in the approximation of exponential distribution of non-equilibrium carriers in the diode base. It is shown that at a certain current the field is constant across the base which allows one to determine the mobility of majority carriers (whose concentration is determined from the barrier capacity measurements). For commercial D223B and D219A diodes the current-voltage characteristics and the differential resistance are measured and the mobility of electrons is calculated. The electric field distribution in the D223B diode is derived at three injection levels.     

真空绝缘堆均压环的结构优化

采用数值模拟法和有限元网格细化法对比给出电场的合理参考范围,分别选取距离阴极三结合点(0.005)(21/2d)处(d是绝缘体的厚度)和距离阳极三结合点(0.008 5)(21/2d)处的电场强度为参考点。通过优化均压环形状,采用阴极激发闪络和阳极激发闪络两种模型来控制三结合点处的场强,优化得出阴极三结合点处场强值为2.55 kV/mm,阳极三结合点处场强值为23 kV/mm。     

Electronic structure and trajectory control of Dirac fermions in graphene ribbons under the competition between electric and magnetic fields

We investigate the electronic structure of graphene ribbons under the competition between lateral electric and normal magnetic fields. The squeezing of quantum level spacings caused by either field is studied. Based on the knowledge of the dispersion under both fields, we analyze the electronic trajectories near the junctions of different electric and magnetic fields configurations. The junctions can split and join electron beams, and the conductance is quite robust against disorder near the junction interfaces. These junction devices can be used as bricks for building more complicated interference devices.     

Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS2-based p-n junction

We investigate the transport properties of electron in a 1T'-MoS₂-based p-n junction. The anisotropic refraction of electron is found when the electron beam crosses the p-n junction, which brings the phenomenon of valley splitting without any external fields. Moreover, it is found that the valley-spin-dependent anomalous Klein tunneling, i.e., the perfect transmission exists at a nonzero incident angle of valley-spin-dependent electron, happens when the vertical electric field is equal to the critical electric field. These two peculiar properties arise from the same reason that the tilted band structure makes the directions of wavevector and velocity different. Our work designs a special valley splitter without any external fields and finds a new type of Klein tunneling.     

Electric flow through an ideal ferromagnet–superconductor junction

It is investigated the possibility of controlling the electric flow through a ferromagnet–superconductor junction by spin polarization, within a simple, ideal model of a perfect ferromagnetic–superconductor junction. The ferromagnetic and superconducting properties as well as the Andreev reflection are briefly reviewed and the electrical resistance of the junction is computed both in the diffusive and ballistic regime for the ferromagnetic sample. It is shown that the resistance of the junction increases with increasing magnetization, including both positive or negative jumps on passing from the ballistic to the diffusive regime.     

Recurrence-Based Synchronization Analysis of Weakly Coupled Bursting Neurons under External ELF Fields

We investigate the response characteristics of a two-dimensional neuron model exposed to an externally applied extremely low frequency (ELF) sinusoidal electric field and the synchronization of neurons weakly coupled with gap junction. We find, by numerical simulations, that neurons can exhibit different spiking patterns, which are well observed in the structure of the recurrence plot (RP). We further study the synchronization between weakly coupled neurons in chaotic regimes under the influence of a weak ELF electric field. In general, detecting the phases of chaotic spiky signals is not easy by using standard methods. Recurrence analysis provides a reliable tool for defining phases even for noncoherent regimes or spiky signals. Recurrence-based synchronization analysis reveals that, even in the range of weak coupling, phase synchronization of the coupled neurons occurs and, by adding an ELF electric field, this synchronization increases depending on the amplitude of the externally applied ELF electric field. We further suggest a novel measure for RP-based phase synchronization analysis, which better takes into account the probabilities of recurrences.     

Radiation from a single Josephson junction into free space due to Josephson oscillations

We consider electromagnetic emission from a Josephson junction (JJ) in a resistive state in an external magnetic field and derive the radiation power from the dielectric layer inside a JJ directly into outside dielectric media. Matching the electric and magnetic fields at the JJ edges, we find dynamic boundary conditions for the phase difference in JJ. We find that the fraction of the power transformed into radiation is determined by the dissipation inside the JJ. It tends to unity as dissipation vanishes independently of the mismatch of the junction and dielectric media impedances.     

A novel thin drift region device with field limiting rings in substrate

A novel thin drift region device with heavily doped N⁺ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.     

Electrochemical fabrication of a novel conducting polythiophene film junction

A compact conductive polythiophene (PT) film junction was prepared by potential controlled electrochemical doping after electropolymerization of thiophene. The polythiophene film was cation-doped on one side, while its other side was anion-doped, which resulted in a polythiophene p-n junction film diode. The free-standing polythiophene film junction diode was flexible and was 1.5 times stronger than aluminum metal. After treatment by a strong electric field, the polythiophene p-n junction exhibits a novel electric property like an intelligent electric switch.     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.