Magnetooptic setup for investigating the dynamic properties of domain walls in thin ferromagnetic films

A magnetooptic Kerr setup is designed for investigating the dynamic properties of domain walls in thin ferromagnetic films subjected to an external magnetic field in the temperature range 20–150°C. With this setup, the method of interrupted magnetization is implemented and the magnetic (domain) structure is visualized based on the meridional Kerr effect. The domain structure is displayed on a PC monitor using a Nikon DXM 1200 high-resolution digital video camera. A dedicated software makes it possible to automatize measurements and data processing.     

用表面磁光克尔效应实验系统测量铁磁性薄膜的磁滞回线

用自制的表面磁光克尔效应实验系统开发了研究性近代物理实验,测出铁磁性薄膜的磁滞回线,并求得克尔旋转角和克尔椭偏率.     

用表面磁光克尔原理测量薄膜材料的磁性参数

以表面磁光克尔原理为机理,测量薄膜材料的磁性参数,实验上求得了饱和状态下坡莫合金的克尔偏转角,并测出了其磁滞回线.     

(Ga,Mn)As中电流诱导自旋极化的磁光Kerr测量

在GaAs吸收带边附近, 利用磁光Kerr效应测量了(Ga,Mn)As和p-GaAs样品的电流诱导Kerr旋转谱和反射谱, 两者都呈现出Lorentz曲线形状. 电流诱导Kerr旋转角和反射率随着电流的增大而增大, Kerr角与电流的大小成正比关系, 反射率与电流的平方成正比关系. (Ga,Mn)As的Kerr旋转角比p-GaAs的大了一个数量级, 这说明Mn原子的掺杂使得电流诱导的自旋极化增强. 另外, 还测量了温度和入射光偏振方向对电流诱导Kerr旋转谱和反射谱的影响. 发现随着温度的升高, Kerr谱和反射谱均向长波方向移动, 这与GaAs带边随温度的变化是一致的.     

Magnetorefractive effect in La<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> in the infrared spectral range

The reflection and magnetic reflection spectra, magnetic resistance, electrical properties, and equatorial Kerr effect in La_0.7Ca_0.3MnO₃ crystals have been complexly investigated. The measurements have been performed in wide temperature and spectral ranges in magnetic fields up to 3.5 kOe. It has been found that magnetic reflection is a high-frequency response in the infrared spectral range to the colossal magnetore-sistance near the Curie temperature. Correlation between the field and temperature dependences of the magnetic reflection and colossal magnetoresistance has been revealed. The previously developed theory of the magnetorefractive effect for metallic systems makes it possible to explain the experimental data at the qualitative level. Both demerits of the theory of the magnetorefractive effect in application to the magnets and possible additional mechanisms responsible for the magnetic reflection are discussed.     

Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions

The surface morphology and magnetic properties of GaAs irradiated by manganese ions are studied at room temperature using atomic-force microscopy and the magnetooptical Kerr effect. It is shown that ferromagnetism takes place in the surface layer of the irradiated semiconductor subjected to annealing at 715–750°C. The magnetic properties of this layer are related to the evolution of submicron clusters in GaAs doped with Mn.     

Magnetization-induced second harmonic generation in a polar ferromagnet

Second harmonic generation (SHG) induced by spontaneous magnetization has been investigated for a polar ferromagnetic crystal of GaFeO3. The Kerr rotation of the second harmonic light becomes gigantic with decreasing temperature below the magnetic transition temperature (approximately =205 K), e.g., as large as 73 degrees at 100 K. The magnetic domains can be visualized by using that large nonlinear Kerr rotation. The spectrum of the magnetization-induced SHG as measured indicates the two-photon resonant electronic process on a Fe3+ ion in the crystal.     

磁光克尔效应中的光子自旋分裂

光子自旋霍尔效应类似于电子系统中的电子自旋霍尔效应, 是在折射率梯度和光子分别扮演的外场和自旋电子的角色下, 由自旋-轨道相互作用而产生的光子自旋分裂现象. 光子自旋霍尔效应为操控光子提供了新的途径, 同时也提供了一种精确测量相关物理效应的方法. 本文研究了磁光克尔效应中光子自旋分裂现象, 建立了磁光克尔旋转与光子自旋霍尔效应之间的定量关系, 并通过弱测量系统观测了磁场作用下铁膜表面的光子自旋分裂位移, 得到相应的磁光旋转角, 验证了我们所推导的理论预测. 本文的研究成果为精确测量磁光克尔系数和磁光克尔旋转角提供了一种新方法.     

Change in the sign of the Kerr effect in ion-beam-synthesized Fe3Si films

Ion-beam-synthesized Fe₃Si thin films are studied using the magneto-optical Kerr effect, ferromagnetic resonance, electron diffraction, and Auger spectroscopy. A change in the direction of rotation of the plane-polarized light as a function of film-synthesis conditions is discovered when the meridional Kerr effect is recorded. It is shown that the observed effect is related to the presence of thin interference films with different thicknesses on the surfaces of the magnetic layers.     

Magnetization-induced third-harmonic generation in nanostructures and thin films

This paper reports on the results of research into low-dimensional magnetic structures that have been intensively studied over previous decades due to the discovery of novel effects that are exhibited by these structures but not observed in bulk magnetic materials. A nonlinear optical analog of the magnetooptical Kerr effect is revealed in the optical third-harmonic generation in thin magnetic metallic films and nanogranular structures. It is shown that the magnetic nonlinear optical Kerr effect observed in the third harmonic exceeds the magnetooptical analog by more than one order of magnitude.     

Magneto-optical and magnetic properties of (YBiSmTm)3(FeGa)5O12 ion-implanted films

A strong dependence of the meridional Kerr effect on the implantation regime that is different in different segments of the spectrum has been observed in He⁺-implanted (YBiSmTm)₃(FeGa)₅O₁₂ films. In addition to the Kerr effect, we have also investigated the dependence of the magnetization, the magnetic anisotropy, and the Néel temperature on the conditions of implantation. Correlations were noted in the behavior of the magnetic, magneto-optical, and electrical properties of the implanted layers. Fiz. Tverd. Tela (St. Petersburg) 39, 1267–1269 (July 1997)     

热克尔态下介观LC电路的量子涨落

基于介观电容可看作介观隧道结的物理事实，利用旋波近似方法，对介观LC电路进行量子化处理，量子化后介观LC电路系统等效为一个克尔系统.再利用热场动力学理论方法 研究了介观LC电路在有限温度时热克尔态下电荷和磁通的量子涨落，并对结果进行了讨 论. 关键词： 介观LC电路 热克尔态 量子涨落     

Influence of a Cr seed layer on the magnetic anisotropy of epitaxial Fe/Ag films on MgO(001)

The magnetic anisotropy of epitaxial 300 Å thick Fe films on Ag and Ag/Cr buffer layers on MgO(001) has been studied by ferromagnetic resonance and magneto-optic Kerr effect measurements. The samples were grown by molecular beam epitaxy at ambient temperature. A reduction of the effective magnetization for the samples with a Ag buffer layer is attributed to strain and dislocation formation as seen from X-ray diffraction measurements at low and high angles. In the samples with a Cr seed layer, a higher magnetic anisotropy is found which correlates with a reduced roughness.     

Investigation of the Kerr effect and third-order susceptibility constants in a nematic liquid crystal

In this paper, the static Kerr effect was investigated for the W-1680 at temperatures above the nematic-isotropic transition temperature and compared with 9CHBT. We experimentally measured the electro-optical Kerr constant and the pre-transitional behavior. The Kerr law has been confirmed and the variation of the inverse Kerr constant, with a temperature above the smectic-isotropic transition temperatures, were determined. The linear dependence of (T − T*)^− 1 on the Kerr constant is found to be in good agreement with the predications of the Landau-De Gennes model. Additionally, the temperature dependence of third order susceptibility has been studied. This value for these samples will reduce when the temperature increases.     

The influence of external magnetic field and femtosecond laser pulses on the anomalous Kerr loops in GdFeCo amorphous film

The anomalous loops obtained by applying the traditional Kerr loop technique, in which the sample was pumped by continuous pulses using the method of successive increment scanning external magnetic field, contained memory and accumulation effects originating, respectively, from external field history and multiple pulse excitations. To eliminate the memory effect and study the influence of external magnetic field on the anomalous loops, an initializing field scanning approach was used to replace the method of successive increment scanning external field. And to confirm the existence of accumulation effect and study the influence of pump pulses on the anomalous loops, a controllable pump-pulse-number magneto-optical Kerr technique was used to replace continuous pulses pump Kerr technique. In both ways, measured with different pump fluence and different pump pulses, the results showed clearly the dependence of the hot coercivity and the degree of magnetization reversal on the external field, pump pulse numbers and pump fluence.     

磁流体制备及性质研究

采用化学共沉淀法制备了纳米Fe3O4磁性颗粒,将其均匀分散在载液中获得磁流体.给出了表征所制备样品的宏观和微观特性图谱,探究了样品的磁热效应、法拉第效应和克尔效应,并制作了磁流体薄膜显示器.通过对磁流体样品的分析,获得其最佳的油酸钠包裹量为0.0216g/mL,样品颗粒小,稳定性高,磁热效应明显.研究发现磁流体薄膜的透射率随磁场变化明显,测量费尔德系数时必须考虑透射率的影响.磁流体样品存在异常克尔信号.     

New possibilities for tuning ultrathin cobalt film magnetic properties by a noble metal overlayer

Complementary multiscale magneto-optical studies based on the polar Kerr effect are carried out on an ultrathin cobalt wedge covered with a silver wedge and subsequently with the Au thick layer. A few monolayers of Ag are found to have a substantial effect on magnetic anisotropy, the coercivity field, and Kerr rotation. The silver overlayer thickness-driven magnetic reorientation from easy axis to easy plane generates a new type of 90 degrees magnetic wall for cobalt thicknesses between 1.3 and 1.8 nm. The tuning of the wall width in a wide range is possible. Tailoring of the overlayer structure can be used for ultrathin film magnetic patterning.     

Versatile UHV system for combined far- and near-field magneto-optical microscopy of thin films

We have developed a UHV system for in situ studies of magnetic domains and magnetization reversal of thin films in the presence of external magnetic fields and at variable temperature. The system comprises a setup for magneto-optical Kerr effect measurements of magnetization curves, a Kerr-microscope for far-field magnetic-domain imaging, and a magneto-optical scanning near-field microscope in combination with a Sagnac interferometer (Sagnac-SNOM) for high-resolution imaging on a sub-μm scale. All components have successfully been tested, and the feasibility of studying ultrathin films has been demonstrated.     

Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.     

Magnetic proximity effects in antiferromagnet/ferromagnet bilayers: the impact on the Néel temperature

We present a study of the ordering temperature of an ultrathin antiferromagnetic film in the proximity of a ferromagnetic layer. The Néel temperature of a single-crystalline antiferromagnetic FexMn1-x film on Cu(001) in contact with a ferromagnetic Ni layer was monitored by the discontinuity in the coercivity as a function of temperature by magneto-optical Kerr effect measurements. It decreases by up to 60 K if the magnetization axis of the ferromagnet is switched from out of plane to in plane by deposition of a Co overlayer. These results give clear evidence for a magnetic proximity effect in which the ferromagnetic layer substantially influences the ordering temperature of the antiferromagnetic layer.