Real-space observation of nanoscale inhomogeneities and fluctuations in a phase transition of a surface quasi-one-dimensional system: In/Si(111)

We report direct visualizations of the fluctuation and condensation phenomena in a phase transition of a one-dimensional (1D) In/Si(111) system using scanning tunneling microscopy. The high-temperature (HT) and low-temperature (LT) phases are found to coexist on the nanometer scale near Tc. Above Tc, 1D LT-phase stripes fluctuate in the HT phase and coalesce into 2D islands with decreasing temperature. They condense to make the LT phase below Tc. Small areas of the HT phase also exist below Tc. The observed temperature-dependent evolution of the nanoscale inhomogeneities is consistent with the theoretical predictions for a second-order phase transition.     

Submonolayer Au on Si(111) phase diagram

Based on a review of the current literature, a surface phase diagram is proposed for the submonolayer Au on Si(111) system. Kinetic considerations are reviewed and key surface phase diagram features such as the Θ < 0.4 ML metastable structure and the high temperature to Si(111)-(1 × 1)Au second order phase transition are discussed. Experiments to verify certain portions of the phase diagram are proposed.     

Sn/Ge(111) surface charge-density-wave phase transition

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1 / 3 monolayer of Sn on Ge(111) in both the room-temperature (sqrt[3]xsqrt[3] )R30 degrees phase and the low-temperature ( 3x3) charge-density-wave phase. The results reveal a gap opening around the ( 3x3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting. A highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the ( 3x3) symmetry.     

Self-organized nanoscale pattern formation on vicinal Si(111) surfaces via a two-stage faceting transition

We demonstrate a self-organized pattern formation on vicinal Si(111) surfaces that are miscut toward the [2;11] direction. All the patterns, consisting of a periodic array of alternating (7 x 7) reconstructed terraces and step-bunched facets, have the same periodicity and facet structure, independent of the miscut angle, while the width of the facets increases linearly with miscut angle. We attribute such unique pattern formation to a surface faceting transition that involves two transition stages: the first stage forms a stress-domain structure defining the universal periodicity; the second stage forms the low-energy facets controlling the facet width.     

Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data obtained are in agreement with the models of surface reconstructions proposed earlier for the structures induced by the adsorption of divalent metal atoms. An important constituent of these structures is provided by strontium atomic chains in the 〈1$ \bar 1 $ \bar 1 0〉 direction. Three types of domains of surface structures are formed on the Si(111) plane, which correspond to the rotational symmetry C ₃ of the surface under consideration. The reduction of the symmetry of the substrate to C ₁ with the use of the stepped Si(7 7 10) surface makes it possible to form strontium atomic chains, which are oriented with respect to the substrate in a similar manner.     

Self-doping of gold chains on silicon: a new structural model for Si(111)-(5 x 2)-Au

A new structural model for the Si(111)-(5 x 2)-Au reconstruction is proposed and analyzed using first-principles calculations. The basic model consists of a "double honeycomb chain" decorated by Si adatoms. The 5 x 1 periodicity of the honeycomb chains is doubled by the presence of a half-occupied row of Si atoms that partially rebonds the chains. Additional adatoms supply electrons that dope the parent band structure and stabilize the period doubling; the optimal doping corresponds to one adatom per four 5 x 2 cells, in agreement with experiment. All the main features observed in scanning tunneling microscopy and photoemission are well reproduced.     

YbRh(2)Si(2): pronounced non-fermi-liquid effects above a low-lyingmagnetic phase transition

We report the first observation of non-Fermi-liquid (NFL) effects in a clean Yb compound at ambient pressure and zero magnetic field. The electrical resistivity and the specific-heat coefficient of high-quality single crystals of YbRh(2)Si(2) present a linear and a logarithmic temperature dependence, respectively, in more than a decade in temperature. We ascribe this NFL behavior to the presence of (presumably) quasi-2D antiferromagnetic spin fluctuations related to a very weak magnetic phase transition at T(N) approximately 65 mK. Application of hydrostatic pressure induces anomalies in the electrical resistivity, indicating the stabilization of magnetic order.     

Indium square root 7 x square root 3 on Si(111): a nearly free electron metal in two dimensions

We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with square root 7 x square root 3 periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.     

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

Transport characteristics of single crystal bismuth films on Si(111)-7×7 are found to be metallic or insulating at temperatures below or above T_C, respectively. The transition temperature T_C decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T_C.     

Chemisorption of Si on Al(111) surfaces: A local-chemical-bond analysis from Auger transition density of states

Auger and electron loss spectroscopies have been used to study the local chemical bond between Si and Al, in the first stages of growth of Si deposited at room temperature on Al(111) surfaces. Si follows a layer-by-layer mechanism up to 2 monolayers with the formation of an Al(111)-3 × 3-Si structure at about 0.44 monolayers. A detailed analysis of the L_2,3VV Auger spectra for this structure allows to interpret the Si and Al Auger transition density of states (TDOS) in terms of the actual p-like partial DOS centered on the Si and Al sites. The experimental results indicate a strong SiAl interaction with the formation of a p-type local covalent bond between the Si and Al surface atoms.     

Structural phase transition on Si(001) and Ge(001) surfaces

Among a variety of solid surfaces, Si(001) and Ge(001) have been most extensively studied. Although they seem to be rather simple systems, there have been many conflicting arguments about the atomic structure on these surfaces. We first present experimental evidence indicating that the buckled dimer is the basic building block and that the structural phase transition between the low-temperature c(4x2) structure and the high-temperature (2x1) structure is of the order-disorder type. We then review recent theoretical work on this phase transition. The real system is mapped onto a model Ising-spin system and the interaction parameters are derived from total-energy calculations for different arrangements of buckled dimers. The calculated critical temperature agrees reasonably well with the experimental one. It is pointed out that the nature of the phase transition is crucially affected by a small amount of defects on the real surfaces.     

Hydrogen vibrations on Si (111)

High resolution electron energy loss spectra are reported for atomic hydrogen and deuterium adsorption on the Si (111) 7x7 surface. The experiments were carried out for various hydrogen exposures and different substrate temperatures. Clear evidence is given for the formation of SiH₂ and/or SiH₃ complexes in the early stages of adsorption. Strong indications are also obtained for the removal of adsorbed hydrogen probably via the formation and desorption of silane during hydrogen exposure.     

Direct evidence of the charge ordered phase transition of indium nanowires on Si111

A controversial issue of the driving force for the phase transition of the one-dimensional (1D) metallic In wires on Si(111) is studied by low-temperature scanning tunneling microscopy and spectroscopy. The energy gap opening and the longitudinal charge ordering through charge transfer at the Fermi level are unambiguously observed. The vacancy defects induce a local charge ordering decoupled from a lattice distortion above T(c), and pin the phase of charge order below T(c). All these results below and above T(c) including the detailed features such as local fluctuations strongly support the 1D charge-density-wave mechanism for the phase transition.