Pentacene thin film transistors using La2O3 as gate insulator

A study of Pentacene OTFTs using La₂O₃ as gate insulator is presented. The device characteristics were studied and analyzed. The OTFTs exhibit p-type conductivity with field effect mobility 6.5 × 10⁻⁸ m²/V.s, ON/OFF ratio 1.4 × 10², sub-threshold swing 2 mV/decade and hole concentration 4.5 × 10¹⁷ cm⁻³. The SEM and XRD analysis on the semiconductor film are also reported.     

Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

The temperature and light intensity dependence of photorefraction in LiNbO3

In the paper the dependence of the photorefraction (PhR) in LiNbO₃ and LiNbO₃−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 10¹⁶–10²³ quanta·cm⁻²·s⁻¹ at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn _sat ^lim ≈3·10⁻³. In LiNbO₃ the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.     

Gemma experiment: Three years of the search for the neutrino magnetic moment

The result of the 3-year neutrino magnetic moment measurement at the Kalinin Nuclear Power Plant (KNPP) with the GEMMA spectrometer is presented. Antineutrino-electron scattering is investigated. A high-purity germanium detector of 1.5 kg placed at a distance of 13.9 m from the 3 GW_th reactor core is exposed to the antineutrino flux of 2.7 × 10¹³ cm⁻² s⁻¹. The scattered electron spectra taken in (5184 + 6798) and (1853 + 1021) h for the reactor ON and OFF periods are compared. The upper limit for the neutrino magnetic moment μ_v < 3.2 × 10⁻¹¹μ _B at 90% CL is derived from the data processing.     

High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure

A field-effect configuration based on La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×10⁷% and 2.6×10⁶% when V _DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si. Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program of China (Grant No. 2004CB619004)     

Spectroscopic properties of Er<Superscript>3+</Superscript> in Sc:LiNbO<Subscript>3</Subscript> crystal

The results of Er³⁺ ion spectroscopic analysis in Sc:LiNbO₃ crystals were reported. The line strengths from the ground state to the excited state were evaluated from the measured unpolarized absorption spectrum and analyzed by using standard Judd–Ofelt theory. For Sc(3 mol. %):Er (1 mol. %):LiNbO₃ crystal, the obtained intensity parameters are: Ω₂=3.72×10^-20 cm², Ω₄=1.07×10^-20 cm², and Ω₆=0.98×10^-20 cm². The fluorescence spectra and microsecond time-resolved spectra were investigated in the visible region. The excited state absorption transition strengths at 800 nm excitation were evaluated based on Judd–Ofelt theory. The results obtained here were compared to results from other research on Er:LiNbO₃ crystals. PACS 71.20.Eh; 77.84.Dy; 42.70.Hj; 42.62.Fi; 42.65.Ky     

Electron temperature (T e) measurements by Thomson scattering system

Thomson scattering technique based on high power laser has already proved its superoirity in measuring the electron temperature (T _e and density (n _e) in fusion plasma devices like tokamaks. The method is a direct and unambiguous one, widely used for the localised and simultaneous measurements of the above parameters. In Thomson scattering experiment, the light scattered by the plasma electrons is used for the measurements. The plasma electron temperature is measured from the Doppler shifted scattered spectrum and density from the total scattered intensity. A single point Thomson scattering system involving a Q-switched ruby laser and PMTs as the detector is deployed in ADITYA tokamak to give the plasma electron parameters. The system is capable of providing the parameters T _e from 30 eV to 1 keV and n _e from 5 × 10¹²cm⁻³−5 × 10¹³cm⁻³. The system is also able to give the parameter profile from the plasma center (Z=0 cm) to a vertical position of Z=+22 cm to Z=−14 cm, with a spatial resolution of 1 cm on shot to shot basis. This paper discusses the initial measurements of the plasma temperature from ADITYA.     

Erbium incorporation in LiNbO3 by diffusion-doping

 The erbium incorporation into LiNbO₃ by diffusion doping is investigated in detail by means of Secondary Ion Mass Spectrometry, Secondary Neutral Mass Spectrometry, Rutherford Backscattering, Atomic Force Microscopy, X-ray Standing Wave technique and optical site-selective spectroscopy. The diffusion of erbium in LiNbO₃ can be described by Fick’s laws of diffusion with a concentration-independent diffusion coefficient. The diffusion constants and activation energies for Z-cut (X-cut) LiNbO₃ are 4.8×10^-5 cm²/s (12.0×10^-5 cm²/s) and 2.28 eV (2.44 eV), respectively. A limited solubility of erbium in LiNbO₃ has to be taken into account increasing exponentially with rising temperature. During the first step of diffusion an Er _x Nb _y -oxide layer is formed at the surface of the sample acting as diffusion reservoir. Erbium is incorporated into LiNbO₃ on vacant Li-sites slightly shifted from the original Li-position along the (-c)-direction. Site-selective spectroscopy found four distinguishable energetically different erbium centres at this lattice site resulting from locally different symmetries of the crystal field. Received: 21 March 1996 / Accepted: 12 August 1996     

Ion-electron transfer in solid solutions Rb2 ? 2xFe2 ? xPxO4

The rubidium monoferrite RbFeO₂-based solid solutions with the composition Rb_{2 − 2x} Fe_{2 − x} P _x O₄ have been synthesized, and their crystal structure and the temperature and concentration dependences of the total and electron conductivities have been studied. The introduction of P⁵⁺ ions has been found to sharply decrease the electron conductivity that prevails in pure rubidium monoferrite and, at the same time, to increase the ionic conductivity. The latter becomes dominant as the phosphorus concentration increases. The maximum rubidium-cation conductivity of the materials under study is ∼3 × 10⁻² S/cm at 300°C and ∼3 × 10⁻¹ S/cm at 700°C. The results have been compared with the previously obtained data for similar solid solutions based on rubidium monogallate and monoaluminate.     

Lattice thermal expansion of cesium plumbo chloride

The temperature variation of the lattice parameter of CsPbCl₃ in the cubic phase has been studied by x-ray method, from a determination of the precision lattice parameter at various temperatures, ranging from 50°C to 400°C. The coefficient of thermal expansion of CsPbCl₃ can be expressed by the quadratic equation,α _T = 21.6 × 10⁻⁶ + 2.44 × 10⁻⁹ T + 5.90 × 10⁻¹¹ T ².     

Optical properties of Tm,Mg:LiTaO3 laser crystal

A Tm, Mg co-doped LiTaO₃ crystal has been grown by Czochralski method. Room temperature polarized absorption spectra and fluorescence spectrum of the Tm, Mg:LiTaO₃ crystal were measured and analyzed. The maximum absorption cross-section is 6.0791 × 10⁻²⁰ cm² at around 790 nm with full width at half maximum of 5 nm. The emission cross-section of ³ F ₄ manifold was 2.2 × 10⁻²⁰ cm². The spectroscopic parameters of Tm³⁺ ion were calculated by applying the Judd-Ofelt approach, and the intensity parameters Ω₂, Ω₄, and Ω₆ were obtained to be 7.71 × 10⁻²⁰, 1.09 × 10⁻²⁰, and 1.16 × 10⁻²⁰ cm², respectively. The branching ratios and radiative lifetimes were also presented and the radiative lifetime of Tm^{3+ 3} F ₄ → ³ H ₆ transition is 968.3 μs. The results were also analyzed and compared with other Tm³⁺ doped hosts.     

Electro-optic modulation analysis of a Y-cut Z-propagation LiNbO3 light modulator: Comparison with an X-cut Z-propagation LiNbO3 light modulator and a dual LiNbO3 crystal type modulator

We analyzed dependence of modulation characteristics on manufacturing errors for a Y-cut Z-propagation (YZ) and an X-cut Z-propagation (XZ) LiNbO₃ (LN) crystal light modulators. We investigated that the modulation of the YZ modulator is hardly affected by small rotation error of Z-axis, while the XZ modulator suffers significant influence. We also analyzed temperature characteristics of modulation of conventional temperature-compensation LN light modulator. These numerical results show that the modulated signal change of the YZ modulator due to temperature variance is not more than 2.5% of that of the temperature-compensation modulator, in the presence of applied electric field of integral times of the half-wave voltage, modulated signal of the YZ modulator is almost independent on the temperature.     

Emission of axions by a hydrogen-like atom in an ultrastrong magnetic field

The resonance effect of emission of axions by a hydrogen-like atom in an ultrastrong magnetic field B ≫ B ₀ = m ²/e = 4.41 × 10¹³ Gs, which is induced by polarization of electron-positron vacuum, is considered. The emission probability and the radiation intensity are on the order of (B/B ₀) × 10⁻¹² of electromagnetic radiation characteristics, which exceeds the conventional ratio by many orders of magnitude. It is shown that, at the temperature of early Universe ≲(Zα)² m, the contribution from the resonance mechanism prevails. However, the relation between the concentrations of relic photons and axions cannot explain the origin of cold dark matter. The axion energy density in “our epoch” is 10⁻⁴(B/B ₀) eV/cm³.     

Nuclear Spin-Lattice Relaxation of 82BrFe

The field dependence of the nuclear spin-lattice relaxation (SLR) of cold implanted ⁸²Br (T ≤ 25 mK) in α-Fe single crystals was investigated with nuclear magnetic resonance of oriented nuclei (NMR/ON) at low temperatures as experimental technique. The SLR at the lattice sites with the hyperfine fields found by earlier NMR/ON experiments was measured as a function of the applied external magnetic field B _ext parallel to the three principle axes [100], [110] and [111] of the iron single crystal. The data were evaluated with the full relaxation formalism in the single impurity limit and for comparison also with the often employed model of a single exponential function with an effective relaxation time T ₁′. With a phenomenological model the high field values of the relaxation rates r _{∞, [100]′} = 6.6(2) · 10⁻¹⁵ T²sK⁻¹, r _{∞, [110]} = 5.4(2) · 10⁻¹⁵ T²sK⁻¹ and r _{∞, [111]} = 5.2(1) · 10⁻¹⁵ T²sK⁻¹ were obtained.     

Dynamics of liquid silane

Neutron scattering of cold neutrons from liquid silane at 137° K and 98°K is explained on the basis of a simple model. The rotational diffusion constant,D _r, and the delay time,τ ₀, after which rotational diffusion may be said to occur are derived on the basis of this model. At 137° K we getD _r=0.22×10¹³ sec⁻¹ andτ ₀=0.68×10⁻¹³ sec. At 98°KD _r (=0.06×10¹³ sec⁻¹) is down by a factor of more than three butτ ₀=(0.54×10⁻¹³ sec) shows only a small change. By comparison with data on liquid CH₄ it is concluded that the law of corresponding states is not applicable for describing rotational dynamics of CH₄ and SiH₄. Rotational motions in SiH₄ are more hindered than in CH₄ at the same reduced temperature.     

Spin-spin interaction of Ni2+ ions in ZnSiF6·6H2O

The angular dependences of the electron spin resonance spectrum of 1% Ni²⁺ ions in a ZnSiF₆·6H₂O matrix are investigated experimentally at 36 GHz and 4.2 K. Besides the main spectrum of the isolated ion, we observed a spectrum due to interacting pairs of Ni²⁺ ions, located in the first (nn) and second (2n) coordination spheres and coupled by, besides the magnetic dipole-dipole interaction, isotropic exchange: J _nn = (−197±1)×10⁻⁴, J _2nα = (−5±1)×10⁻⁴, and J _2nβ = (3±2)×10⁻⁴ cm⁻¹. Lines due to other isolated Ni²⁺ ions, which have a different initial splitting D, are also present in the spectrum with intensity comparable to the pair spectrum. Low-symmetry distortions of the crystal field are observed, caused by a pair of impurity ions located close to one another. It is shown that the previously proposed interpretation is incorrect. Fiz. Tverd. Tela (St. Petersburg) 41, 1602–1608 (September 1999)     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.     

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx _Sn ^l of Sn in the liquid (1.6×10⁻⁴≤x _Sn ^l ≤0.54), the growth temperatureT _K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD _As (760° C)=(3.3±1.0)×10⁻⁵ cm²/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx _Sn ^l , on α and onT _K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10⁻¹⁴ cm²/s at 760° C. The distribution coefficient for Sn increases from 4.4×10⁻⁵ to 12.3×10⁻⁵ in the temperature range from 690 to 800° C. The total Sn incorporationx _Sn ^s was measured using the atomic absorption spectroscopy for the first time down tox _Sn ^s =10¹⁷/cm³. From these data it can be concluded that up tox _Sn ^l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Hydrogen diffusion constants in stainless steel and Pd60Ag40 alloy, and permeability of diaphragms made of these metals

Hydrogen permeability through diaphragms made of 12X18H12T stainless steel and Pd₆₀Ag₄₀ alloy under electrolytic hydrogen saturation has been studied with an electrolytic cell with a vacuum chamber. Hydrogen diffusion constants D _H = 3.86 × 10⁻¹⁰ cm² s⁻¹ for stainless steel and D _H = 4.36 × 10⁻⁸ cm² s⁻¹ for Pd₆₀Ag₄₀ alloy have been determined at a temperature of 40°C using the Berrer relations.