Determination of charge states of single swift heavy projectiles by high-energy delta-electrons

The effective charge state is an important particle parameter which is required for the calculation of many effects concerning the interaction between radiation and matter such as an estimate of the radial dose of swift heavy projectiles, stopping power and so on. A new method for the determination of effective charge states of heavy ions is based on the measurement of the number of high-energy delta-electrons which are ejected from a target by the penetrating ion. These electrons are detectable with a CCD-detector and their number can be correlated to the effective charge state of the projectile for known particle velocities. This method is even applicable to operation with single swift heavy ions within statistical bounds.     

Investigations into properties of charge traps created in CCDs by neutron and electron irradiation

Our group has been investigating the effects related to radiation damage of CCDs since 1998. In a series of measurements in 2003 we found the puzzling effect of very slow filling of charge traps created by radiation damage of the silicon device. In 2005 we intended to study this phenomenon in detail. However, while in 2003 we could see all the traps created by neutron irradiation in 1998–1997 unchanged, such traps unexpectedly almost completely disappeared in 2005. We explain this as an effect of annealing induced by electron irradiation, as in 2003 we irradiated with electrons the same device irradiated with neutrons in 1997–1998. Results of the 2005 measurements are presented.      

质子辐照电荷耦合器件诱导电荷转移效率退化的实验分析

开展了电荷耦合器件（CCD）质子辐照损伤的实验研究. 分析了质子辐照CCD后电荷转移效率的退化规律,阐述了质子辐照诱导电荷转移效率退化的损伤机理,比较了不同能量质子对电荷转移效率的损伤程度. 通过开展辐射粒子输运理论计算,分析了不同能量质子对电荷转移效率损伤差异的原因. 关键词： 电荷耦合器件 质子 辐照效应 电荷转移效率     

Quantum entanglement and control in a capacitively coupled charge qubit circuit

The macroscopic quantum entanglement in capacitively coupled SQUID (superconducting quantum interference device)-based charge qubits is investigated theoretically. The entanglement characteristic is discussed by employing the quantum Rabi oscillations and the concurrence. An interesting conclusion is obtained, i.e., the magnetic fluxes Ф_x1 and Ф_x2 through the superconducting loops can adjust the entanglement degree between the qubits.     

非理想情况下的CCD调制传递函数的综合表示方法

从理论上讨论了沟道类型对CCD调制传递函数的影响,并在前期工作的基础上给出了非理想情况下的CCD调制传递函数的综合表示方法。利用数值模拟的方法对非理想情况下的CCD调制传递函数与理想情况下的CCD调制传递函数进行了比较。     

Monolithic integration technology between microlens arrays and infrared charge coupled devices

In this paper, we develop an integration technology between Si microlens and 256(H)×256(V) element PtSi Schottky-barrier infrared charge coupled device (IR-CCD) to improve the optical responsivity of CCD sensor. The refractive microlenses with the pixel size of approximately 28×28 μm² is directly fabricated on the backside of CCD substrate to focus the incident irradiation onto the active area. For the integration device the fill factor is improved by a factor of 2.1. As a result, the IR-CCD image sensors operating at 77 K indicate an approximate 0.06–0.4 increase in relative optical responsivity in the spectral range of from 1 to 5 μm. CCD imaging quality with microlens has been improved comparing to that without microlens to a great extent.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

新型CZT半导体X射线和g射线探测器研制与应用展望

CdZnTe(CZT)半导体是一种性能优异的室温X射线和γ射线探测材料,在环境监测、医学诊断、工业无损检测、安全检查、空间科学等众多领域有广泛的应用前景。文章简要介绍了CZT探测器的基本工作原理和性能评价指标,阐述了CZT晶体物理性能对CZT探测器性能的影响规律和CZT探测器的模拟与设计方法。CZT半导体探测器的应用与发展前景广阔,为此需要重点开展高质量、低成本的CZT晶体生长研究,CZT探测器的设计与制备以及辐射探测整机系统的设计与开发。     

一种用于堆叠结构有机发光二极管的新的电荷生成层

本文报道了一种用于堆叠结构有机电致发光器件的新的电荷生成层: LiF/Al/V₂O₅,采用这种电荷生成层的堆叠器件的两个发光单元互相独立,不受影响.说明在外加电场下,这种电荷生成层具有向邻近的发光单元注入电子空穴的能力.而堆叠了两个相同发光单元的器件的电流效率在相同的电流密度下约为普通单层结构的1.7倍.同时这种电荷生成层避免了溅射indium tin oxide(ITO)和金属、有机物共掺,只需要热蒸发,生长工艺简单. 关键词： 堆叠结构 有机电致发光器件 电荷生成层     

Alpha Particle Response of CR-39 Polycarbonated Detector

The alpha particle response which is characteristic of polycarbonate detectors CR-39 has been investigated. The track diameter as a function of alpha energy in the range from 5.1–22.2 MeV was examined. The mean track diameter or size of the tracks are found to be energy dependent which decreases as alpha energy increases with a trend at about 14 MeV alpha energy. With regard to the spectroscopy of alpha from track radii, it was stated that the discrimination of lower alpha energies shows better results than the high energies for the present etching condition.

Es wurde die charakteristische Wirkung von Alpha-Teilchen auf die Polycarbonatdetektoren CR-39 untersucht. Der Spurendurchmesser als Funktion der Alpha-Energie wurde im Energiebereich 5,1… 22,2 MeV verfolgt. Der mittlere Spurendurchmesser oder die Spurengroβe waren energieabhängig und nahmen mit zunehmender Alpha-Energie bei einem Trend von ungefähr 14 Me V ab. In being auf die Spektroskopie von Alpha-Teilchen von den Spurenradien wurde festgestellt, daβeine Unterscheidung von niederen Alpha-Energien bessere Ergebnisse brachte als solche bei hohen Energien für die vorliegende Ätzbedingung.     

半导体开关单次超限工作研究

对半导体开关在这种超限条件下的单次使用情况进行了研究,尤其对级联状态多次试验。试验结果显示,额定电流为30mA的半导体开关可以实现单次放电电流达到10kA的稳定放电。通过对放电过程进行分析发现,开关从导通至最终损坏经过了一个比较复杂的物理过程,电路拓扑结构及其开关安装位置都将会对输出性能产生影响。     

Analyse of Corrections during Measurements of Charge of a Semiconductor Detector

The amplitude of signals coming from a semiconductor detector depends on the a amplifier system filter networks, detector physical properties and energy of particles measured. The absolute measuring of detector charge requires an analysis of the influence of the mentioned parameters upon the measuring system reaction. The paper gives the theoretical concepts and correction diagrams for the optimum filter networks of CR-RC and CR-(RC)² tapes taking into consideration the existence of an undesirable integrating constant of the charge sensitive preamplifier. The application of the presented diagrams increases the accuracy and helps checking the obtained results by a pulse generator.     

SNOM应用于光电材料和器件的光学特性的探测和表征

介绍了近场光学及近场探测的原理 ,给出了其用于光电器件研究中的一些结果。近场光学方法具有超衍射分辩的本领和纳米局域光场探测的能力 ,适用于多种光电材料的探测与表征 ,包括 :LD、光纤波导器件、光子晶体器件等。纳米局域光场和倏逝场的探测发现了许多远场探测无法得到的结果 ,为光电器件纳米结构的研究提供了有力证据     

Si被注入Gd后的磁性及其整流特性的研究

采用离子束技术，在n型硅基片中注入稀土元素钆，制备了磁性-非磁性p-n结.磁性层Gd_xSi_1-x表现出优良的磁学性能，高居里温度，高原子磁矩(利用RKKY模 型 可以得到解释)，低矫顽力，并保持着半导体的属性，磁性-非磁性p-n结具有整流特性，但 没有观察到明显的磁电阻效应. 关键词： 磁性半导体 磁性p-n结 钆的硅化物 离子束外延     

烷氧链链长对吐昔烯电荷传输性质的影响

吐昔烯衍生物的盘状液晶分子,在有机电子材料领域被用作光导材料和载流子传输材料。使用电子转移的Marcus模型,在B3LYP/6-31G**水平上研究了5个含三条烷氧链(n=1,3,5,8,10)的吐昔烯衍生物分子的电荷转移性质。计算表明,电荷转移矩阵元t是影响分子电荷转移的主要因素。5个分子中,随烷氧链长度(n)增大,空穴、电子传输重组能的变化范围分别为16~19 kJ/mol和26~ 30 kJ/mol。空穴传输矩阵元t+减小超过4倍,空穴传输载流子迁移率μ+减小超过3个数量级。电子传输矩阵元t-增大幅度不大,电子传输载流子迁移率μ-增大2倍,表明烷氧链增长不利于空穴传输,有利于电子传输。     

烷氧链链长对吐昔烯电荷传输性质的影响

吐昔烯衍生物的盘状液晶分子,在有机电子材料领域被用作光导材料和载流子传输材料。使用电子转移的Marcus模型,在B3LYP/6-31G**水平上研究了5个含三条烷氧链(n=1,3,5,8,10)的吐昔烯衍生物分子的电荷转移性质。计算表明,电荷转移矩阵元t是影响分子电荷转移的主要因素。5个分子中,随烷氧链长度(n)增大,空穴、电子传输重组能的变化范围分别为16~19 kJ/mol和26~ 30 kJ/mol。空穴传输矩阵元t+减小超过4倍,空穴传输载流子迁移率μ+减小超过3个数量级。电子传输矩阵元t-增大幅度不大,电子传输载流子迁移率μ-增大2倍,表明烷氧链增长不利于空穴传输,有利于电子传输。     

不同盖层对InAs/GaAs量子点结构和光学性质的影响

利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8 nm增加到12 nm,发光波长从1256.0 nm红移到1314.4 nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高. 关键词： 半导体量子点 盖层 组分渐变     

基于石墨烯的太赫兹器件研究进展

石墨烯是一种零带隙二维的半导体材料, 具有极高的载流子迁移率, 优异的机械、电学、热学和光学等性能. 在太赫兹辐射源、调制器和探测器件的研究中, 石墨烯材料具有独特的优势. 本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主, 综述了石墨烯太赫兹器件的最新研究进展.     

X射线脉冲星导航系统导航精度的研究

为提高X射线脉冲星导航系统的导航精度,提出了一种基于低通滤波器的恒比定时方法,以提高X射线脉冲星导航系统中X射线脉冲到达时间的测量精度.通过设计测量方案,对原有的峰值定时方法和改进后的恒比定时系统的定时精度和死时间进行测量.测量结果表明,峰值定时系统的定时精度和死时间分别为18和4750 ns,恒比定时系统的定时精度和死时间分别为0.78和105 ns,与原有的峰值定时系统相比,采用恒比定时系统的定时精度和死时间均得到明显的提高.在X射线脉冲星导航系统中,通过利用这两种不同定时系统来测量X射线光子的到达时间以构造累积脉冲轮廓.实验结果表明,与峰值定时系统相比,采用改进的恒比定时系统获得的累积脉冲轮廓的信噪比得到明显改善,因此,采用恒比定时系统的导航精度可得到提高.     

基于脉冲耦合神经网络的空中扩展目标检测

 对单位链接脉冲耦合神经网络模型中的线性调制、动态阈值衰减方式及步长、迭代次数控制等关键环节进行了改进，进一步简化了网络模型，使其更适合于图像处理。并针对低对比度、背景连续变化环境下的空中扩展目标检测问题，应用反色处理，并采用最大直线轮廓点数方法，确定其最佳迭代次数和分割结果，实现目标的自动检测。仿真实验结果表明，该方法能清晰完整地保留目标轮廓，有效检测出复杂背景下的空中扩展目标。