Phase retrieval from the spectral interference signal used to measure thickness of SiO<Subscript>2</Subscript> thin film on silicon wafer

A new method of phase retrieval from the spectral interference signal is presented, which is based on the use of a windowed Fourier transform in the wavelength domain. The phase retrieved by the method is utilized for measuring the thickness of SiO₂ thin film on a silicon wafer. The numerical simulations are performed to demonstrate high precision of the phase retrieval. The feasibility of the method is confirmed in processing experimental data from a slightly dispersive Michelson interferometer with one of the mirrors replaced by SiO₂ thin film on the silicon wafer. We determine the thin-film thickness for four samples provided that the optical constants for all the materials involved in the experiment are known. We confirm very good agreement with the previous results obtained by the fitting of the recorded channelled spectra to the theoretical ones. PACS 07.60.Ly; 42.30.Rx; 68.55.Jk; 78.20.Bh     

Dispersive white-light spectral interferometry including the effect of thin-film for distance measurement

A spectral-domain white-light interferometric technique is used for measuring distances in a Michelson interferometer with a mirror represented by a thin-film structure (TFS) on a substrate. A fibre-optic spectrometer is employed for recording spectral interferograms that include wide wavelength range effects of dispersion in a cube beam splitter and multiple reflection within the TFS. Knowing the effective thickness of the beam splitter, its dispersion and parameters of the TFS and substrate, the positions of the second interferometer mirror are determined precisely by a least-squares fitting of the theoretical spectral interferograms to the recorded ones. We apply the technique to the beam splitter made of BK7 optical glass and to a uniform SiO₂ thin film on a silicon wafer. We compare the results of the processing that include and do not include the effect of the TFS.     

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO₂ thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrors replaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely the thickness of the SiO₂ thin film on silicon wafers of two crystallographic orientations and different dopant concentrations. We confirmed very good agreement between the experimental data and theory and revealed that the thin-film thickness, which varies with the type of silicon substrate, depends linearly on the wavelength at which minimum in the spectral reflectance occurs. Similar behaviour was revealed for the interferometric phase.     

Spectral interferometry and reflectometry used to measure thin films

A new method for a precise measurement of the oscillatory part of phase change on reflection (interferometric phase) from a thin-film structure is presented. The method, which is based on phase retrieval from the spectral interferograms recorded at the output of a slightly dispersive Michelson interferometer, is combined with reflectometry. The interferometric phase of the thin-film structure is measured precisely using a reference sample of known phase change on reflection. The spectral reflectance of the thin-film structure is also measured in the interferometer. The feasibility of the method is confirmed in processing the experimental data for SiO₂ thin film on a silicon wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. We confirm very good agreement between the thicknesses obtained from the interferometric phase and reflectance measurements. PACS  07.60.Ly; 68.55.Jk; 78.20.Bh     

Dispersion error of a beam splitter cube in white-light spectral interferometry

We revealed that the phase function of a thin-film structure measured by a white-light spectral interferometric technique depends on the path length difference adjusted in a Michelson interferometer. This phenomenon is due to a dispersion error of a beam splitter cube, the effective thickness of which varies with the adjusted path length difference. A technique for eliminating the effect in measurement of the phase function is described. In a first step, the Michelson interferometer with same metallic mirrors is used to measure the effective thickness of the beam splitter cube as a function of the path length difference. In a second step, one of the mirrors of the interferometer is replaced by a thin-film structure and its phase function is measured for the same path length differences as those adjusted in the first step. In both steps, the phase is retrieved from the recorded spectral interferograms by using a windowed Fourier transform applied in the wavelength domain.     

Maxima of the spectral reflectance ratio of polarized waves used to measure the thickness of a nonabsorbing thin film

A simple method to determine the thickness of a nonabsorbing thin film on an absorbing substrate from maxima of the ratio between the spectral reflectances of p- and s-polarized components reflected from the thin-film structure is presented. The spectral reflectance ratio, which can be measured in a simple polarimetry configuration at a fixed angle of incidence, consists of maxima whose number and positions depend on the thickness of a thin film. An approximative linear relation between the thin-film thickness and a wavelength of the maximum of the reflectance ratio for a specific angle of incidence is revealed, provided that the wavelength-dependent refractive index of the thin film is known and the substrate is weakly absorbing. The relation permits the calculation of the thickness from the measured spectral reflectance ratio by using one maximum only, as is demonstrated theoretically for a SiO₂ thin film on a Si substrate. The application of this method is demonstrated experimentally for the same thin-film structure with different thicknesses of the SiO₂ thin film. The results are compared with those given by the algebraic fitting method, and very good agreement is confirmed.     

White-light spectral interferometric technique to measure a nonlinear phase function of a thin-film structure

We present a new two-step white-light spectral interferometric technique to measure a nonlinear phase function of a thin-film structure. The technique is based on recording of channeled spectra at the output of a Michelson interferometer and their processing by using a windowed Fourier transform to retrieve the phase functions. First, the phase function including the effect of a thin-film structure is retrieved. Second, the structure is replaced by a reference sample of known phase change on reflection and the corresponding phase function is retrieved. From the two functions, the nonlinear phase function of the thin-film structure is obtained. The feasibility of this simple method is confirmed in processing the experimental data for a SiO₂ thin film on a Si wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. The thicknesses obtained are compared with those resulting from reflectometric measurements, and a good agreement is confirmed.     

Spectral interferometric technique to measure the relative phase change on reflection from a thin-film structure

A two-step white-light spectral interferometric technique to measure the relative phase change on reflection from a thin-film structure is presented. The technique is based on recording of the channeled spectra at the output of a Michelson interferometer and their processing by using a windowed Fourier transform to retrieve the phase functions. In the first step, the phase difference between the beams of the interferometer with a thin-film structure is retrieved. In the second step, the structure is replaced by a reference sample of known phase change on reflection and the corresponding phase difference is retrieved. From the two phase differences, the relative phase change on reflection from the thin-film structure is obtained. The feasibility of the simple method is confirmed in processing the experimental data for a SiO₂ thin film on a Si wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. The thicknesses obtained are compared with those resulting from reflectometric measurements, and good agreement is confirmed.     

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used to control bulk acoustic wave to transmit in the directions parallel to the surface of the silicon wafer. Passive 45° mirror planes obtained by wet chemical etching were employed to reflect the bulk acoustic wave. Zinc oxide (ZnO) thin film transducers were deposited by radio frequency sputtering with a thickness of about 1 μm on the other side of the wafer, which act as emitter/receptor after aligned with the mirrors. Two opponent vertical mirrors were inserted between the 45° mirrors to guide the transmission of the acoustic waves. The propagation of the bulk acoustic wave was studied with simulations and the characterization of S₂₁ scattering parameters, indicating that the mirrors were efficient to guide bulk acoustic waves in the silicon wafer.     

纳米表面二维周期半圆凹槽增强硅薄膜太阳能电池光吸收

利用时域有限差分方法, 研究硅薄膜上下表面周期半圆凹槽结构对于太阳光吸收的增强效应. 研究发现这种结构可以实现太阳光宽波段的光吸收增强, 通过调节SiO₂表面减反层厚度和凹槽半径长度来实现薄膜太阳能电池最大的光吸收, 并实现了波长在300-1000 nm范围的太阳光吸收总能量比没有这种 结构下硅薄膜光吸收提高了约117%. 关键词： 硅薄膜 半圆凹槽 吸收增强     

Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

A method has been proposed for determining the optical properties of a thin film layer on absorbing substrates. The film optical parameters such as thickness, refractive index, absorption coefficient, extinction coefficient and the optical energy gap of an absorbing film are retrieved from the interference fringes of the reflection spectrum at normal incidence. The envelopes of the maxima of the spectrum E_M and of the minima E_m are introduced in analytical forms to find the reflectance amplitudes at the interfaces and approximate values of the thin film refractive index. Then, the interference orders and film thickness are calculated to get accurate values of the needed optical parameters. There are no complex fitting procedures or assumed theoretical refractive index dispersion relations. The method is applied to calculate the optical properties of an epitaxial gallium nitride thin film on a silicon (1 1 1) substrate. Good agreement between our results and the published data are obtained.     

Measurement of absolute phase Shift on reflection of thin films using white-light spectral interferometry

A novel method to measure the absolute phase shift on reflection of thin film is presented utilizing a white-light interferometer in spectral domain. By applying Fourier transformation to the recorded spectral interference signal, we retrieve the spectral phase function Ф, which is induced by three parts： the path length difference in air L, the effective thickness of slightly dispersive cube beam splitter Teff and the nonlinear phase function due to multi-reflection of the thin film structure. We utilize the fact that the overall optical path difference （OPD） is linearly dependent on the refractive index of the beam splitter to determine both L and Teff. The spectral phase shift on reflection of thin film structure can be obtained by subtracting these two parts from Ф. We show theoretically and experimentally that our new method can provide a simple and fast solution in calculating the absolute spectral phase function of optical thin films, while still maintaining high accuracy.     

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

A transmission-mode GaAs photocathode includes four layers of glass,Si 3 N 4 ,Ga 1x Al x As and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spec-trophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition,a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error,meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness,layer interface effects and surface oxides is interpreted on the modification.     

Investigation of interface roughness cross-correlation properties of optical thin films from total scattering losses

The interface roughness and interface roughness cross-correlation properties affect the scattering losses of high-quality optical thin films. In this paper, the theoretical models of light scattering induced by surface and interface roughness of optical thin films are concisely presented. Furthermore, influence of interface roughness cross-correlation properties to light scattering is analyzed by total scattering losses. Moreover, single-layer TiO₂ thin film thickness, substrate roughness of K9 glass and ion beam assisted deposition (IBAD) technique effect on interface roughness cross-correlation properties are studied by experiments, respectively. A 17-layer dielectric quarter-wave high reflection multilayer is analyzed by total scattering losses. The results show that the interface roughness cross-correlation properties depend on TiO₂ thin film thickness, substrate roughness and deposition technique. The interface roughness cross-correlation properties decrease with the increase of film thickness or the decrease of substrates roughness. Furthermore, ion beam assisted deposition technique can increase the interface roughness cross-correlation properties of optical thin films. The measured total scattering losses of 17-layer dielectric quarter-wave high reflection multilayer deposited with IBAD indicate that completely correlated interface model can be observed, when substrate roughness is about 2.84 nm.     

Thickness-dependence of optical constants for Ta2O5 ultrathin films

An effective method for determining the optical constants of Ta₂O₅ thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient–oxide–interlayer–substrate) was presented. Ta₂O₅ thin films with thickness range of 1–400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta₂O₅ ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta₂O₅. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.     

N掺杂SiO2纳米薄膜的制备及其磁性

利用射频磁控反应溅射技术,制备了氮掺杂的SiO₂纳米薄膜.发现N掺杂SiO₂体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm³和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO₂体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献 关键词： 2薄膜')" href="#">N掺杂SiO₂薄膜 射频磁控反应溅射 界面磁性 基底温度     

Dicyanoperylene-diimide thin-film growth: a combined optical and morphological study

N,N′-bis (n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN₂) molecules represent an important example of novel n-type organic materials for realization of air-stable n-channel organic thin film transistors. In this work, the growth by evaporation of PDI8-CN₂ thin films deposited on silicon/silicon dioxide substrates has been investigated as a function of the film thickness through the combination of optical and morphological analyses. A continuous transition from two-dimensional to three-dimensional growth is observed at increasing thickness, accompanied by a modification of the photoluminescence spectrum of the films. Correlations between morphology and optical emission (photoluminescence) of the films are evidenced: namely, an emission band, red shifted with respect to the excitonic transition, emerges at increasing thickness. Time-resolved photoluminescence analysis demonstrates that the decay kinetics of such a band is different from the one associated with exciton recombination. Such a feature may thus represent a useful signature of defect-related trap states.     

An experimental demonstration of resonant sideband extraction for laser-interferometric gravitational wave detectors

Resonant sideband extraction is a new optical configuration for laser-interferometric gravitational wave detectors with Fabry-Perot cavities in the arms. It reduces the thermal load on the beam splitter and the coupling mirrors of the cavities and also allows one to adapt the frequency response of the detector to a variety of requirements. We report the first experimental demonstration using a table-top setup at a detuned operating point. An increase of sensitivity by 6 dB was observed for artificial signals at frequencies above the arm cavity bandwidth, and the overall transfer function agreed well with theoretical predictions.     

Thickness dependent optical properties of titanium oxide thin films

TiO₂ thin films of different thickness were prepared by the Electron Beam Evaporation (EBE) method on crystal silicon. A variable angle spectroscopic ellipsometer (VASE) was used to determine the optical constants and thickness of the investigated films in the spectral range from 300 to 800 nm at incident angles of 60°, 70°, and 75°, respectively. The whole spectra have been fitted by Forouhi–Bloomer (FB) model, whose best-fit parameters reveal that both electron lifetime and band gap of TiO₂ thin film have positive correlation to the film thickness. The refractive indices of TiO₂ thin film increase monotonically with an increase in film thickness in the investigated spectral range. The refractive index spectra of TiO₂ thin films have maxima at around 320 nm and the maxima exhibit a marginally blue-shift from 327.9 to 310.0 nm with an increase in film thickness. The evolution of structural disorder in the TiO₂ thin film growth can be used to explain these phenomena.     

Novel catalysts: Indium implanted SiO2 thin films

Interactions of Indium (In) and silicon (Si) atoms are known to catalyze certain organic chemical reactions with high efficiency. In an attempt of creating a material that manifests the interactions, In implanted SiO₂ thin films were prepared by ion beam injection and their catalytic abilities for organic chemical reactions were examined. It has been found that, with an injection energy of approximately 0.5 keV, a thin In film is formed on a SiO₂ substrate surface and the In implanted SiO₂ thin film can catalyze an organic chemical reaction. It has been also shown that there is an optimal ion dose for the highest catalytic ability in the film preparation process. Thin-film-type catalyzing materials such as the one proposed here may open a new way to enhance surface chemical reaction rates.