Theoretical study on the kesterite solar cells based on Cu_2ZnSn(S,Se)_4 and related photovoltaic semiconductors

The kesterite thin film solar cells based on the quaternary Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 and their alloys Cu_2ZnSn(S,Se)_4 have been considered as environment-friendly and non-toxic alternatives to the currently commercialized Cd Te and Cu(In,Ga)Se_2 thin film solar cells.From the theoretical point of view,we will review how the group Ⅰ_2-Ⅱ-Ⅳ-Ⅵ_4 quaternary compound semiconductors are derived from the binary CdTe and the ternary CuInSe_2 or CuGaSe_2 through the cation mutation,and how the crystal structure and electronic band structure evolve as the component elements change.The increased structural and chemical freedom in these quaternary semiconductors opens up new possibility for the tailoring of material properties and design of new light-absorber semiconductors.However,the increased freedom also makes the development of high-efficiency solar cells more challenging because much more intrinsic point defects,secondary phases,surfaces,and grain-boundaries can exist in the thin films and influence the photovoltaic performance in a way different from that in the conventional Cd Te and Cu(In,Ga)Se_2 solar cells.The experimental characterization of the properties of defects,secondary phase,and grain-boundaries is currently not very efficient and direct,especially for these quaternary compounds.First-principles calculations have been successfully used in the past decade for studying these properties.Here we will review the theoretical progress in the study of the mixed-cation and mixed-anion alloys of the group Ⅰ_2-Ⅱ-Ⅳ-Ⅵ_4 semiconductors,defects,alkaline dopants,and grain boundaries,which provided very important information for the optimization of the kesterite solar cell performance.     

Regulation of Zn/Sn ratio in kesterite absorbers to boost 10% efficiency of Cu_2ZnSn(S,Se)_4 solar cells

The Zn/Sn ratio in Cu_2ZnSn(S,Se)_4(CZTSSe)films has been regulated to control the composition-related phase,defect,and photoelectric properties for high performance kesterite solar cells.It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent.Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase,the lowest defect density,and the longest charge recombination lifetime.Up to 10.1%photoelectric conversion efficiency has been achieved by this composition regulation.     

Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells

(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF₂ layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.     

Interfaces of high-efficiency kesterite Cu_2ZnSnS(e)_4 thin film solar cells

Cu_2ZnSnS(e)_4(CZTS(e)) solar cells have attracted much attention due to the elemental abundance and the nontoxicity.However,the record efficiency of 12.6% for Cu_2ZnSn(S,Se)_4(CZTSSe)solar cells is much lower than that of Cu(In,Ga)Se_2(CIGS)solar cells.One crucial reason is the recombination at interfaces.In recent years,large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods.This paper gives a review of progresses on interfaces of CZTS(e)solar cells,including:(i)the band alignment optimization at buffer/CZTS(e)interface,(ii)tailoring the thickness of MoS(e)_2 interfacial layers between CZTS(e)absorber and Mo back contact,(iii)the passivation of rear interface,(iv)the passivation of front interface,and(v)the etching of secondary phases.     

Structural and optical properties of Cu2ZnSn(S,Se)4 films obtained by magnetron sputtering of a Cu2ZnSn alloy target

Results of the study of structural and optical properties of Cu₂ZnSn(S,Se)₄ thin films obtained by sulfitation (selenization) of Cu₂ZnSn films which were sputtered by target direct current magnetron sputtering using a stoichiometric Cu₂ZnSn (99.99%) target are presented. It has been found that Cu₂ZnSn(S,Se)₄ thin films are polycrystalline with a grain size of ~60 nm. The optical bandgap of Cu₂ZnSnS₄ (E ^op _g = 1.65 eV) and Cu₂ZnSnSe₄ (R ^op _g = 1.2 eV) thin films have been determined.

     

Comparative study on Cu2ZnSn(S,Se)4 based thin film solar cell performances by adding various back surface field (BSF) layers

In this research work, SCAPS-1D (Solar Cell Capacitance Simulator in one Dimension) is used to simulate the CZTSSe (Cu2ZnSn(S,Se)4) solar cell with Al/ZnO:Al/ZnO(i)/CdS/CZTSSe/Mo structure. The simulation results have been compared and validated with real experimental results. After that, an effective receipt is proposed with the aim of improving the efficiency of the CZTSSe solar cell, in which a BSF layer is inserted using various materials (SnS, CZTSSe and CZTSe). The obtained results show that the efficiencies of CZTSSe solar cells are increased from 12.3% to 15.7%, 15.3% and 15% by the insertion of SnS, CZTSSe and CZTSe materials as BSF layers, respectively. This enhancement corresponds with a BSF layer thickness of 30 nm and doping concentration of 1E18 cm⁻³. Next, an optimization of BSF layers thickness has been conducted. The optimum value of thickness is considered at 40 nm with an enhancement ratio in efficiency of 36.70%, 26.21% and 21.53% for SnS, CZTSSe and CZTSe, respectively. Better performances have been noted for SnS material. The optimized CZTSSe solar cell with SnS as a BSF layer achieves an efficiency of 16.95% with J_SC = 36.34 mA/cm², V_OC = 0.69 V, and FF = 67% under Standard Test Conditions (AM1.5 G and cell temperature of 25 °C).     

Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell

Carbon layers have been employed as intermediate layers between Mo back contact and Cu₂ZnSn(S_1–xSe_x)₄(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe₂ and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Growth mechanism of thermally processed Cu(In,Ga)S2 precursors for printed Cu(In,Ga)(S,Se)2 solar cells

We investigate a process used for the selenisation of particle‐based precursors to prepare low‐cost Cu(In,Ga)(S,Se)₂ (CIGS) solar cells. It is suitable for high throughput with a short optimum selenisation duration of 3–5 min and employs a rapid thermal annealing system with elemental selenium vapour. Homogeneous crack‐free Cu(In,Ga)S₂ precursor films of up to 1 µm are obtained via doctor blading. The high selenium vapour pressure in the selenisation reaction chamber results in the formation of a compact Cu(In,Ga)(S,Se)₂ layer on top of a carbon‐rich underlayer. In order to investigate the phase development in the film, the selenisation process was interrupted at different stages and the samples were monitored via XRD and surface‐sensitive Raman measurements. We find the formation of a polycrystalline Cu(In,Ga)Se₂ phase already after 1 s at the target temperature of 550 °C. Furthermore, the effect of initial precursor thickness on solar cell parameters is discussed. Complete solar cells are prepared by conventional methods, leading to conversion efficiencies well above 8%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Complex alloying effect on thermoelectric transport properties of Cu_2Ge(Se_(1-x)Te_x)_3

To enhance the thermoelectric performance of Cu_2GeSe_3, a series of Te-alloyed samples Cu_2Ge(Se_(1-x)Te_x)_3 are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x = 0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x ≥ 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution,together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a z T of 0.55@750 K is obtained for the sample with x = 0.3, about 62% higher than that for the pristine sample.     

Cu2ZnSn(S1–xSex)4 thin film solar cells prepared by water‐based solution process

The kesterite Cu₂ZnSn(S_1–xSe_x)₄ (CZTSSe) thin film solar cell has been developed rapidly due to its excellence in structural and optical properties and its abundance in raw materials. Both vacuum‐based and solution‐based methods have been successfully employed to fabricate CZTSSe thin film solar cells. In this Letter, we report an environmentally friendly, water‐based, solution process for fabrication of high‐efficiency CZTSSe thin film solar cells. High quality CZTSSe thin film is obtained by selenization under high temperature and Se vapor. An efficiency of 6.2% is achieved on CZTSSe thin film solar cell fabricated by such water‐based solution process. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Cu₂ZnSi(S,Se)₄ and Cu₂Si(S,Se)₃ are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu₂SiS₃, Cu₂SiSe₃and Cu₂ZnSiSe₄thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu₂SiSe₃ and Cu₂SiS₃, and quaternary Cu₂ZnSiSe₄ based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure

Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb₂Se₃) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb₂Se₃ thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb₂Se₃ solar cell with a power conversion efficiency of 2.45% was achieved.     

双核铜配合物[Cu2（pida）2（2,2′-bipy）2]的合成、表征及其结构

N-苯基亚氨基二乙酸,Cu2 离子和2,2′-联吡啶在溶液中组装得到标题配合物[Cu2(pida)2(2,2′-bipy)2](H2pida=N-苯基亚氨基二乙酸)。用元素分析、红外光谱、单晶衍射对配合物的组成和结构进行了表征,结果表明,该标题配合物为N-苯基亚氨基二乙酸根桥联的双核结构,配体pida中的N原子没有参与配位,中心铜离子为五配位畸变的四方锥构型。     

Resonant photoemission spectroscopy of Cu(InGa)Se2 materials for solar cells

The electron structure of CuIn_{1 ? x} Ga _x Se₂ single crystals is determined via resonant photoemis-sion and the main regularities of its transformation upon varying concentration x from 0 to 1 are established. The dependence of the shape of valence band spectra on the photon energy is studied. Integral photoemission intensities are shown to be determined by atomic photoionization cross sections. Processes of the direct and two-step creation of photoelectrons accompanying photoemission and the participation of internal states in the spectra of electrons from valence bands are studied. Two-hole final states in photoemission are obtained upon threshold excitation of the Cu 2p level. The strong interaction of holes leads to the multiplet splitting of these states. Partial densities of the components’ states are determined using the energy dependence of atomic photoionization cross sections.     

Cu(In,Ga)Se2太阳能电池快速热退火效应

利用光致发光（PL）分析快速热退火对Cu(In,Ga)Se2 (CIGS)电池的影响,研究退火对薄膜缺陷的影响。Cu(In,Ga)Se2电池的PL谱中总共有 7个峰,即2个可见波段峰和5个红外波段峰。退火温度较低,可减少薄膜体内缺陷,提高载流子浓度,改善薄膜质量;退火温度过高,则会引起正常格点处元素扩散,元素化学计量比改变,体内缺陷增加,吸收层带隙降低,反而会对CIGS薄膜造成破坏。     

Optoelectronic characteristics of >9% efficient bilayered CuZnSn(S,Se)4 photovoltaic device

Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi‐layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin‐film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of the device's performance and composition from XPS depth profiling are presented, and based on the results we discuss possible areas for further efficiency improvement. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of CdS deposition temperature for thermally grown Cu(In,Ga)Se2 and two-step chalcogenized Cu(In,Ga)(S,Se)2 absorbers on solar cell performances

CdS buffer layer of varying thickness ranging from 23 to 58 nm deposited at different substrate temperature were prepared as n-type junction partner for thermally grown Cu(In,Ga)Se₂ and two-step chalcogenized Cu(In,Ga)(S,Se)₂ photovoltaic absorber films and the effect of deposition temperature and time on the CdS growth behavior and solar cell performance were evaluated. High deposition temperature resulted in a thicker CdS layer and more importantly lower density and shallower depth of open voids, which attributed to the improved open-circuit voltage and fill factor due to reduced interface recombination. The solar cell efficiency of thermally grown absorber saturated at about 30 nm thickness of CdS, while that of chalcogenized absorber gradually increased with CdS thickness up to 60 nm without significant loss of short-circuit current density.     

Photoluminescence properties of Ca_4La_6(SiO_4)_4(PO_4)_2O_2-based phosphors for wLEDs

The apatite compound Ca_4La_6(SiO_4)_4(PO_4)_2O_2(CLSPO) was explored as the host material for phosphors used in white light-emitting diodes(w LEDs). The crystal structure of the CLSPO host prepared by the solid-state reaction method was investigated with Rietveld refinement. The rare earth ions(Eu~(3+)/Tb~(3+)/Ce~(3+), Tb~(3+)/Tb~(3+), Mn~(2+))activated CLSPO phosphors were synthesized, and their photoluminescence properties, quantum yields, as well as thermal stabilities, were studied. Under near-ultraviolet excitations, the Eu~(3+) and Tb~(3+) -doped CLSPO compounds exhibited red and green emissions with high luminescence efficiencies. Besides, tunable emissions from green to orange were obtained by introducing Mn~(2+) ions into the Tb~(3+) -doped CLSPO samples. The results showed that the phosphors studied may have potential applications for w LEDs.     

Cu2S nanocrystals incorporated highly efficient non-fullerene ternary organic solar cells

Here, we report Cu₂S nanocrystals based non-fullerene ternary polymer solar cells by incorporating Cu₂S in conjugated polymer (PBDB-T: poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene))-alt-(5,5-(1′,3′-di-2-thienyl-5′,7′-bis(2-ethylhexyl) benzo[1′,2′-c:4′,5′-c′]dithiophene-4,8-dione))]) and small molecule non-fullerene compound (ITIC:3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene). The devices were fabricated in inverted configuration i.e. ITO/ZnO/PBDB-T: Cu₂S NCs: ITIC/MoO₃/Ag. Effect of concentration of Cu₂S nanocrystals on the performance parameters of PBDB-T: ITIC based organic solar cells is studied. An enhancement in the power conversion efficiency from 8.24% to 9.53% is achieved for the optimum concentration of Cu₂S nanocrystals in the organic photoactive blend. The cause of improvement in the performance parameters of the device is investigated by means of the light intensity dependent electrochemical impedance spectroscopy and atomic force microscopy. It is found that the devices with Cu₂S nanocrystals have less trap-assisted recombination.