Boundary scattering in ballistic graphene

We report magnetotransport measurements in ballistic graphene mesoscopic wires where the charge carrier mean free path is comparable to the wire width W. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius R_{c} and wire width W as W/R_{c}=0.9±0.1, due to diffusive boundary scattering. The obtained proportionality constant between R_{c} and W differs from that of a classical semiconductor two-dimensional electron system in which W/R_{c}=0.55.     

Correlated charged impurity scattering in graphene

We study electron transport properties of graphene in the presence of correlated charged impurities via adsorption and thermal annealing of potassium atoms. For the same density of charged scattering centers, the sample mobility sensitively depends on temperature which sets the correlation length between the scatterers. The data are well-understood by a recent theory that allows us to quantitatively extract the temperature dependence of the correlation length. Impurity correlations also offer a self-consistent explanation to the puzzling sublinear carrier-density dependence of conductivity commonly observed in monolayer graphene samples on substrates.     

Electrons scattering in the monolayer graphene with the short-range impurities

Scattering problem for electrons in monolayer graphene with short-range perturbations of the types “local chemical potential” and “local gap” has been solved. Zero gap and non-zero gap kinds of graphene are considered. The determined S-matrix can be used for calculation of such observables as conductance and optical absorption.     

扶手椅型石墨纳米带的双空位缺陷效应研究

采用基于密度泛函理论的第一性原理电子结构和输运性质计算,研究了扶手椅型石墨纳米带（具有锯齿边缘）的双空位缺陷效应.研究发现：双空位缺陷的存在并没有改变石墨纳米带的金属特性,但改变了费米面附近的能带结构.同时,双空位缺陷的取向对石墨纳米带的输运性质有很重要的影响.对于奇数宽度的纳米带,斜向双空位缺陷使得石墨带导电性能减弱,而垂直双空位能基本保留原有的线性伏安特性,导电性能降低较少;对于偶数宽度的纳米带,斜向双空位缺陷会使石墨带导电性能明显增强,而垂直双空位缺陷则具有完整石墨带的输运性质. 关键词： 石墨纳米带 585双空位缺陷 电子结构 输运性质     

The dislocations in graphene with the correction from lattice effect

The dislocation widths and Peierls stresses of glide dislocations and shuffle dislocations in graphene have been studied by the improved Peierls-Nabarro (P-N) equation which contains the discrete correction. The discrete parameter is obtained from a simple dynamic model in which the interaction attributed to the variation of bond length and angle was considered. The restoring force in the improved P-N equation is given by the gradient of the generalized stacking fault energy surface (γ-surface). Our calculation shows that the widths of the shuffle dislocation and the glide dislocation are narrow and the width of the shuffle dislocation is about twice wider than the glide dislocation. The Peierls stress of a shuffle dislocation is one order of magnitude smaller than that of a glide dislocation. As a consequence, the shuffle dislocation moves more easily than the glide dislocation.     

The effect of vacuum annealing on graphene

The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 10¹³ cm⁻² is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H₂O and O₂ adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.     

The influence of impurity formation on electron inelastic scattering of suspended graphene

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two‐phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two‐phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Enhanced Raman scattering of graphene on Ag nanoislands

The effect of Ag nanoislands on the Raman of graphene was investigated in this work. Compared with that on the bare silicon wafer, Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands, which would be induced by the localized plasmon resonance in Ag nanostructures. The interaction between the graphene sheet and Ag/Si substrate was further studied. The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.     

Effect of the Coulomb scattering on graphene conductivity

The effect of the Coulomb scattering on graphene conductivity in field-effect transistor structures is discussed. Interparticle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system, where both electron and hole densities exactly coincide) is defined by a strong electron-hole scattering. It has a universal value independent of the temperature. We give an explicit derivation based on the scaling theory. When there is even a small discrepancy in the electron and hole densities caused by the applied gate voltage, the conductivity is determined by both a strong electron-hole scattering and a weak external scattering: on the defects or phonons. We suggest that the density of the charged defects (occupancy of defects) depends on the Fermi energy to explain the sublinear dependence of conductivity on a fairly high gate voltage observed in the experiments. We also eliminate the contradictions between the experimental data obtained in the deposited and suspended graphene structures regarding the graphene conductivity. The text was submitted by the authors in English.     

Theory of charged impurity scattering in two-dimensional graphene

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile and graphene’s transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphene’s transport properties due to scattering off charged impurities both at low and high carrier density.     

Ratchet effect in graphene with trigonal clusters

We introduce the Fisher information in the basis of decay modes of Markovian dynamics, arguing that it encodes important information about the behavior of nonequilibrium systems. In particular we generalize an orthonormality relation between decay eigenmodes of detailed balanced systems to normal generators that commute with their time-reversal. Viewing such modes as tangent vectors to the manifold of statistical distributions, we relate the result to the choice of a coordinate patch that makes the Fisher-Rao metric Euclidean at the steady distribution, realizing a sort of statistical equivalence principle. We then classify nonequilibrium systems according to their spectrum, showing that a degenerate Fisher matrix is the signature of the insurgence of a class of dynamical phase transitions between nonequilibrium regimes, characterized by level crossing and power-law decay in time of suitable order parameters. An important consequence is that normal systems cannot manifest critical behavior. Finally, we study the Fisher matrix of systems with time-scale separation.     

Deformation and scattering in graphene over substrate steps

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.     

Electron scattering in the monolayer graphene with a band-asymmetric annular potential well

Electron scattering in the monolayer graphene has been considered within the framework of our model of short-range defects proposed earlier. Electronic properties are determined by the Dirac equation for the two-component spinor wave function. Perturbation is modeled by the annular well with a band-asymmetric potential. Band-asymmetry of the potential stems from the local structure defect and leads to the mass (gap) perturbation in the Dirac equation. Transitions between the K and K’ critical points in the Brillouin zone are neglected, which is valid provided that the short-range perturbation has a finite radius. Exact explicit formulas for the scattering matrix have been derived. Results are presented in terms of the scattering phases and in the geometrical form of a relation between some 2-vectors. The characteristic equation for the bound and resonance states has been obtained in the form of an orthogonality condition. An approximate calculation of observables in terms of the scattering theory results is outlined.     

堆叠石墨片对锯齿型石墨纳米带电子输运的影响

采用格林函数方法研究了堆叠石墨片对锯齿型石墨纳米带电子输运性质的影响,计算了两种不同堆叠方式下锯齿型石墨纳米带的电导.研究发现,由于堆叠石墨片与石墨纳米带的耦合作用,锯齿型石墨纳米带的电导谱出现了电导谷.在远离费米能处,两种堆叠方式下的电导谷位置相近甚至重合;而在费米能附近,两种堆叠方式下的电导谷存在差异.此外,讨论了堆叠石墨片的几何尺寸对锯齿型石墨纳米带电子输运的影响.结果显示,随石墨片几何尺寸的增大,锯齿型石墨纳米带在两种堆叠方式下远离费米能处的电导谷逐渐向费米能方向移动,同时其费米能附近的电导谷在两种堆叠方式下的差异随石墨片尺寸的增大变得更为明显.研究结果表明,堆叠石墨片能够有效地调制锯齿型石墨纳米带的电子输运性质.     

The KK effect in ππ scattering

The current picture of s-wave isoscalar ππ scattering shows a sharp rise of the phase shift δ₀₀ through a resonance just below the $\text{K}\text{K}$ threshold. A model based on coupled ππ and $\text{K}\text{K}$ channels is developed for understanding this phenomenon. The method is one in which we analyze four form factors: the π to π and K to K matrix elements of two isoscalar sigma commutators derived from $\text{(3,}\text{3}\text{) + (}\text{3}\text{,3)}$ symmetry breaking. The equations for the system of coupled form factors are obtained from hard-meson current algebra and solved in terms of analytic functions having the ππ and $\text{K}\text{K}$ cuts. Unitarity is invoked to extract the desired ππ phase shift. The dramatic influence of the $\text{K}\text{K}$ channel is apparent in the solution and an excellent fit to the recent data is obtained. An S¹ resonance is among the resutls; the resonance pole on the second sheet is found at complex energy $\text{M ?}\text{1}\text{2}\text{iΓ = (1006?23i)}\text{MeV}$.     

Measurement of scattering rate and minimum conductivity in graphene

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of 1-20x10(3) cm2/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from 2-15x10(11) cm(-2). In the low carrier density limit, the conductivity exhibits values in the range of 2-12e2/h, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short-range disorder whereas low mobility samples are dominated by long-range scatterers.     

Manifestation of LO-LA phonons in Raman scattering in graphene

We analyze the spectral density of Raman scattering in graphene accompanied by the emission of a pair of LO or LA phonons from the corner of the Brillouin zone. Using a minimal tight-binding model approach, we find that the lineshape of the corresponding Raman signal consists of two peaks with a strongly non-Lorentzian (almost triangular) form with their width and the splitting between the peaks being strongly dependent on the energy of the incoming photon. The asymmetric lineshape is determined by the kinematics of the fully-resonant two-phonon process, and it reflects a strong anisotropy of LO-LA phonons’ dispersion around the Brillouin zone corners.     

The Kondo effect in reduced graphene oxide films

The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ～30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Flexoelectric effect driven colossal triboelectricity with multilayer graphene

Converting mechanical deformation from surrounding environment into detectable electrical signals remains one of the most attractive fields due to its potential applications in sustainable energy harvesting, self-powered sensors, and others. Presently, deformation energy is harvested by generating voltage/current through bending/twisting of piezoelectric materials, but its recyclability is limited in number. In contrast, polarization is generated in all known insulators/semiconductors due to elastic strain gradient, which offers unique electromechanical coupling and in turn, could generate significant potential differences to drive charge transfer. Here, we demonstrate that extremely high direct current with density of 28 × 10⁶ A m⁻² is generated without need of any external power supply by applying pointed force using conductive-atomic force microscope (cAFM) tip on multilayer graphene/substrate (SiO₂, Si, glass). Further, the ramp-dependent time-resolved current is measured at a localized point, which indicates that pointed force-induced flexoelectric potential differences are the main driving factor to utilize mechanoelectrical coupling and in turn generate high current density. This research work provides a new strategy to utilize the flexoelectric effect to utilize electromechanical coupling to generate giant energy harvesting, which will have a potential impact on the various multiple fields including smart devices, materials, and even a fundamental understanding of physics.