CMOS反相器的电磁干扰频率效应

利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明：低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作;高频电磁干扰通过MOS管中的本征电容耦合到输出端,干扰CMOS反相器的工作状态;CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。     

CMOS反相器的电磁干扰频率效应

利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明:低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作;高频电磁干扰通过MOS管中的本征电容耦合到输出端,干扰CMOS反相器的工作状态;CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。     

印制线抗电磁干扰模型分析与计算

对双导体传输线的Taylor模型在频域下的非齐次线性微分方程组,采用常数变异法求得其在边界条件下解的表达式,所求得传输线在终端响应的电压和电流值与BLT方程求得的结果相同。同时,还得到了印刷电路板上的平行双线在外电磁场辐射下终端响应电压的解析表达式,并通过解析解分析得到了不产生干扰电压时的电磁波的入射角度和极化方向。     

印制线抗电磁干扰模型分析与计算

对双导体传输线的Taylor模型在频域下的非齐次线性微分方程组,采用常数变异法求得其在边界条件下解的表达式,所求得传输线在终端响应的电压和电流值与BLT方程求得的结果相同。同时,还得到了印刷电路板上的平行双线在外电磁场辐射下终端响应电压的解析表达式,并通过解析解分析得到了不产生干扰电压时的电磁波的入射角度和极化方向。     

中子引起单粒子翻转过程的Monte Carlo计算模拟

从中子与硅原子相互作用的物理机理出发,利用Monte Carlo方法编制了中子引起单粒子翻转的计算模拟程序,并对14 MeV中子环境下的16K位静态存储器硅片翻转过程中的物理量进行了计算,同时可为中子引起的单粒子翻转的研究提供截面和描述内部物理过程的参考数据。     

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

The thermal failure induced by high power microwave(HPM) in a complementary metal oxide semiconductor(CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.     

Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics

The DC and inverter characteristics for the position of a single grain boundary (GB) in a nanosheet gate-all-around (GAA) MOSFET based on poly-crystalline silicon with three channels were analyzed. For the same channel layer, owing to the band banding by the drain voltage, the GB displays decreasing influence on the current as it moves towards the drain. The GB exhibits the highest on-state current of 6.89 × 10⁻⁴ A/μm when it is located at the drain. The DC characteristics determine the noise margin and delay time of the inverter. The higher the induced current, the lower the noise margin and delay time of the NMOS leading to improved characteristics of the inverter. The delay time when the GB existed in the drain, was considered to be the best in terms of DC performance as it was the lowest at 6.47 ps and showed 8.3% improvement in the switching characteristics.     

通信机箱内连接器电磁干扰建模与仿真

随着工作频率的提高,通信系统面临的电磁干扰问题日益严重。其中高速连接器信号走线上的高频电流是产生电磁辐射的主要干扰源。对含有复杂元器件的通信机箱进行电磁建模与仿真长期面临结构过于复杂、仿真与测试难以匹配等困难。提出基于机箱Q值测算融合的方法建立等效仿真模型,基于区域分解对干扰源和机箱进行协同仿真,并采用有源叠加实现随机信号叠加效应的仿真分析。提出的分析方法可准确模拟真实机箱的谐振及耗散特性,简化连接器多端口激励随机叠加效应的仿真计算,实现机箱泄漏场强的准确预估。     

Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.     

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up(SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset(MCU) is the parasitic bipolar amplification,it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse.Finally, we use the electric static discharge(ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.     

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer, and storage in the four-transistor active pixel sensor (4T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes (PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates (TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion (FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μ m test pixel designed in 0.11 μ m CIS process.     

考虑参数不确定性的高空电磁脉冲E1分量环境计算及分析

高空电磁脉冲的早期分量幅值高、频谱宽、分布范围广,是高空核爆的电磁效应的重要组成部分。分析了国内外高空电磁脉冲早期分量仿真计算法的研究进展,并选取基于高频近似并考虑电子与电磁场自洽作用的EXEMP算法进行详细介绍,通过数值计算结果总结了高空电磁脉冲的时域波形和空间分布随场源当量、爆高等参数变化的规律,与IEC标准约定的波形时域和空间特征一致。针对HEMP计算中部分参数的不确定性,分析参数取值偏差和波动对电磁脉冲计算结果的影响,使用多项式混沌方法联合Sobol全局敏感度指标对其进行不确定量化,得到电磁脉冲关键值可能分布的上下界、分布的概率密度等信息,分析各参数在特定取值范围内对电磁脉冲特征参数的影响及联合影响。     

基于场路仿真的PCIe电磁干扰分析及优化设计

采用电磁仿真技术,提前评估PCB的电磁兼容设计是否合理,当对PCB进行电磁兼容测试时,减少其电磁干扰不满足GMW 3097标准的情况出现。首先对PCB进行3D电磁场仿真,再与高速串行计算机扩展总线标准模块内芯片的通用模拟电路仿真模型的电路仿真动态链接,进行场路协同仿真。实验验证表明,该仿真方法的精度在6 dBμV之内,满足PCB加工工艺的误差和实验测试的不确定度,符合仿真精度要求。通过该仿真方法评估PCB的电磁干扰强度以及优化PCB的设计,将高速串行计算机扩展总线标准模块上的33 Ω电阻替换为磁珠后,该PCB在1.6 GHz处的电磁干扰强度降低了13.4 dB。根据CISPR 25标准规定的1-m法进行测试,PCB的电磁干扰变为−3.4 dBμV,低于GMW 3097标准要求,从而验证了该措施的有效性。     

A Gyrokinetic simulation model for low frequency electromagnetic fluctuations in magnetized plasmas

We present a new model for simulating the electromagnetic fluctuations with frequencies much lower than the ion cyclotron frequency in plasmas confined in general magnetic configurations.This novel model(termed as GK-E&B)employs nonlinear gyrokinetic equations formulated in terms of electromagnetic fields along with momentum balance equations for solving fields.It,thus,not only includes kinetic effects,such as wave-particle interaction and microscopic(ion Larmor radius scale)physics;but also is computationally more efficient than the conventional formulation described in terms of potentials.As a benchmark,we perform linear as well as nonlinear simulations of the kinetic Alfvén wave;demonstrating physics in agreement with the analytical theories.     

静态随机存储器单粒子翻转效应三维数值模拟

针对特征尺寸为1.5 μm的国产静态随机存储器（SRAM）,构建了三维SRAM存储单元模型,并对重离子引起的SRAM单粒子翻转效应进行了数值模拟.计算并分析了单粒子引起的单粒子翻转和电荷收集的物理图像,得到了SRAM器件的单粒子翻转截面曲线.单粒子翻转的数值模拟结果与重离子微束、重离子宽束实验结果比较一致,表明所建立的三维器件模型可以用来研究SRAM器件的单粒子翻转效应. 关键词： 三维数值模拟 单粒子翻转 微束 宽束     

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.     

磁阻型电磁发射的建模分析与仿真研究

本文分析了磁阻型电磁发射的机理,得出了发射过程的等效作用.利用磁矩模型建立了磁阻型电磁发射的理论模型,并结合发射电路的模型导出了弹体的动力学方程,分析了影响弹体发射的主要因素,给出了MATLAB仿真结果.     

强流电子束加速器中气体开关的电磁辐射等效模型

对触发开关和主开关产生电磁辐射的机理进行了详细的分析,将气体开关导电通道等效为电偶极子,理论分析了其辐射电磁波的空间分布,以同轴电缆为实验对象,研究了电磁辐射的干扰。实验测量了触发开关和主开关的电磁辐射信号,结果表明, 运用偶极辐射等效可以很好地描述二者的辐射特性。在强流电子束加速器产生电磁辐射的时刻,同轴电缆中感应出了一定强度的电流,幅值达3 V,已经足以对其他信号的准确测量产生影响。     

强流电子束加速器中气体开关的电磁辐射等效模型

对触发开关和主开关产生电磁辐射的机理进行了详细的分析,将气体开关导电通道等效为电偶极子,理论分析了其辐射电磁波的空间分布,以同轴电缆为实验对象,研究了电磁辐射的干扰。实验测量了触发开关和主开关的电磁辐射信号,结果表明, 运用偶极辐射等效可以很好地描述二者的辐射特性。在强流电子束加速器产生电磁辐射的时刻,同轴电缆中感应出了一定强度的电流,幅值达3 V,已经足以对其他信号的准确测量产生影响。     

单粒子翻转脉冲激光模拟的能量阈值的计算

根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。