双极集成电路低剂量率辐射损伤增强效应的高温辐照加速实验

选择了四种典型双极集成电路,在两种不同剂量率下,开展了不同温度的高温辐照加速实验,测量了典型双极集成电路的辐射敏感参数在不同高温辐照下的变化规律。实验结果表明：高温辐照能够给出空间低剂量率辐射损伤增强效应的保守估计,且存在最佳辐照温度,最佳辐照温度随总剂量的增加向低温区漂移,随剂量率的增大向高温区漂移,在相同剂量率和总剂量下,输入级为NPN晶体管的双极集成电路比输入级为PNP晶体管的最佳辐照温度低。     

双极集成电路低剂量率辐射损伤增强效应的高温辐照加速实验

选择了四种典型双极集成电路,在两种不同剂量率下,开展了不同温度的高温辐照加速实验,测量了典型双极集成电路的辐射敏感参数在不同高温辐照下的变化规律。实验结果表明:高温辐照能够给出空间低剂量率辐射损伤增强效应的保守估计,且存在最佳辐照温度,最佳辐照温度随总剂量的增加向低温区漂移,随剂量率的增大向高温区漂移,在相同剂量率和总剂量下,输入级为NPN晶体管的双极集成电路比输入级为PNP晶体管的最佳辐照温度低。     

p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究

对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H⁺在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型. 关键词： p型金属氧化物半导体场效应晶体管 60Co γ射线')" href="#">⁶⁰Co γ射线 电离辐射损伤 低剂量率辐射损伤增强效应     

基区表面势对栅控横向PNP晶体管中子位移损伤的影响

通过在常规横向PNP晶体管基区表面氧化层上淀积栅电极,制作了可以利用栅极偏置调制基区表面势的栅控横向PNP晶体管。对无栅极偏置电压和偏置电压分别为-10 V和10 V的栅控横向PNP晶体管,在西安脉冲反应堆上开展注量为21012, 41012, 61012, 81012,11013 cm-2的中子辐照实验,研究基区表面势的增加和降低对栅控横向PNP晶体管中子位移损伤退化特性的影响。研究结果表明,基区表面势的增加引起栅控横向PNP晶体管共射极电流增益倒数的变化量随辐照中子注量的退化速率增加,基区表面势的降低对位移损伤退化速率无明显影响。     

纳米压痕法测量Cu的室温蠕变速率敏感指数

把恒加载速率/载荷法（const.P·/P）和恒载荷法（const.P）相结合，提出了一个稳态加载和长时间保载的纳米压痕蠕变试验新方法.该方法不仅适用于高蠕变能力的低熔点材料，也适用于低蠕变能力和存在压痕尺寸效应的高熔点材料.用该方法确定Cu的室温蠕变速率敏感指数m为0.01，并发现其值不受加载段所用的P·/P值和达到的最大压入位移h-max的影响. 关键词： 纳米压痕 铜 蠕变 蠕变速率敏感指数     

互补金属氧化物半导体器件空间低剂量率辐射效应预估模型研究

给出了一种新的预估互补金属氧化物半导体器件(CMOS器件)空间低剂量率辐射效应模型,相对线性响应预估模型,该模型在预估CMOS器件低剂量率辐射效应方面更接近实际试验结果,且不同剂量率辐射试验结果证实了所建模型的正确性.最后利用新建模型对处于空间低剂量率环境下CMOS器件的敏感参数进行了预估.     

Effects of low temperature irradiation with heavy ions on superconductor niobium

To study the effects of heavy ion irradiation at low temperature on type II superconductor Nb, the transition temperatureT _c , the normal state residual resistivityρ _B , the transition widthΔT _ph using oxygen ions of 25 MeV and subsequent thermal annealing were measured. The samples were held at temperatures <20 K during irradiation in a cryostat for in situ measurements. The maximum oxygen fluence was about 2·10¹⁵ cm^?2 corresponding a relatively high defect concentration. The heavy ion irradiation experiments are described. The critical temperatureT _c decreases with increasing residual resistivityρ _B . In agreement with the theory and experiments, the gap anisotropy parameter is 〈a ²〉=0.008, subsequent annealing shows a hysteresis ofT _c versusρ _B . The resistivity saturation value Δρ_BS = 2.55 μΩ cm was obtained and different recovery stages were found. Significant broadening of transition width during irradiation was observed.T _c andΔT _ph anneal to 60% in the temperature interval of (60–90) K. Oxygen induced effects as a simulation method of high neutron damage are compared with irradiation measurements using neutrons and deuterons.     

Estimation of temperature elevation generated by ultrasonic irradiation in biological tissues using the thermal wave method

In most previous models,simulation of the temperature generation in tissue is based on the Pennes bio-heat transfer equation,which implies an instantaneous thermal energy deposition in the medium.Due to the long thermal relaxation time τ(20 s-30 s) in biological tissues,the actual temperature elevation during clinical treatments could be different from the value predicted by the Pennes bioheat equation.The thermal wave model of bio-heat transfer(TWMBT) defines a thermal relaxation time to describe the tissue heating from ultrasound exposure.In this paper,COMSOL Multiphysics 3.5a,a finite element method software package,is used to simulate the temperature response in tissues based on Pennes and TWMBT equations.We further discuss different factors in the bio-heat transfer model on the influence of the temperature rising and it is found that the temperature response in tissue under ultrasound exposure is a rising process with a declining rate.The thermal relaxation time inhibits the temperature elevation at the beginning of ultrasonic heating.Besides,thermal relaxation in TWMBT leads to lower temperature estimation than that based on Pennes equation during the same period of time.The blood flow carrying heat dominates most to the decline of temperature rising rate and the influence increases with temperature rising.On the contrary,heat diffusion,which can be described by thermal conductivity,has little effect on the temperature rising.     

A method to assess the combined effects of neutrons and low temperature on transistor circuits

Methodolgy is presented which permits the conservative performance assessment of transistor electronics under the combined environments of neutron irradiation and low temperature.     

Effect of low dose neutron irradiation on the mechanical properties of an AIMgSi alloy

Abstract

An AlMgSi alloy prepared in two different conditions of age-hardening was neutron irradiated to fast fluences up to 2.5 × 10¹⁸n cm^?2 at 50°C. Postirradiation tensile and hardness tests were performed in the range from room temperature up to 350°C. The results show that the alloy in its soft and hard conditions exhibits a pronounced degree of irradiation-induced softening. The degree of softening is found to be dependent upon the ageing treatment given to the alloy before irradiation. The observed softening is suggested to be brought about by irradiation-induced dissolution of the age-hardening precipitates present before irradiation.     

Effects of helium irradiation dose and temperature on the damage evolution of Ti_3SiC_2 ceramic

The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti_3SiC_2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The helium irradiation experiments were performed at both room temperature(RT) and 500℃ with a fluence up to 2.0 × 10~(17) He~+/cm~2 that resulted in a maximum damage of 9.6 displacements per atom.Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti_3SiC_2 lattice and then cause the dissociation of Ti_3SiC_2 to TiC nano-grains with the increasing He fluence.Irradiation induced cell volume swelling of Ti_3SiC_2 at RT is slightly higher than that at 500℃, suggesting that Ti_3SiC_2 is more suitable for use in a high temperature environment.The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti_3SiC_2 are different from those in Ti_3AlC_2.The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.     

Improving the gas barrier properties of a-SiOxCyNz film at low temperature using high energy and suitable nitrogen flow rate

Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (～80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiO_xC_yN_z film. The a-SiO_xC_yN_z films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiO_xC_yN_z film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR).     

Effect of reaction temperature on the size and morphology of scorodite synthesized using ultrasound irradiation

Synthesis of scorodite (FeAsO₄·2H₂O) using dynamic action agglomeration and the oxidation effect from ultrasound irradiation was investigated. The effect of different reaction temperatures (90, 70, 50, and 30 °C) on the size and morphology of scorodite particles synthesized under O₂ gas flow and ultrasound irradiation was explored because the generation of fine bubbles depends on the solution temperature. At 90 °C, the size of scorodite particles was non-homogeneous (from fine particles (<1 μm) to large particles (>10 μm)). The oxidation–reduction potential (ORP) and yield at 90 °C showed lower values than those at 70 °C. The scorodite particles, including fine and non-homogeneous particles, were generated by a decrease in the oxidation of Fe(II) to Fe(III) and promotion of dissolution caused by the generation of radicals and jet flow from ultrasound irradiation. Using ultrasound irradiation in the synthesis of scorodite at low temperature (30 °C) resulted in the appearance of scorodite peaks in the X-ray diffraction (XRD) pattern after a reaction time of 3 h. The peaks became more intense with a reaction temperature of 50 °C and crystalline scorodite was obtained. Therefore, ultrasound irradiation can enable the synthesis of scorodite at 30 °C as well as the synthesis of large particles (>10 μm) at higher temperature. Oxide radicals and jet flow generated by ultrasound irradiation contributed significantly to the synthesis and crystal growth of scorodite.     

Identification of active oxygen on Cu 110 using low temperature scanning tunneling microscopy

Using a low temperature scanning tunneling microscope (STM) we have imaged isolated oxygen-related features on the unreconstructed surface between (2 × 1)-O regions on Cu{110}. On the assumption that these are individual oxygen atoms, they appear to occupy mostly hollow sites in the troughs. We suggest that such adatoms constitute an active form of oxygen known to participate readily in deprotonation reactions on copper surfaces.     

Characteristic enhancement of white LED lamp using low temperature co-fired ceramic-chip on board package

In this paper, we propose low temperature co-fired ceramic-chip on board (LTCC-COB) package with improved thermal characteristics; no insulation layer exists between the LED chip and metal base. In actual measurement as well as in thermal simulation, the proposed LED lamp structure showed excellent thermal properties, compared with surface mound device-printed circuit board (SMD-PCB) package LED lamp. The optical output power, thermal distribution, current-voltage (I-V) and electroluminescence (EL) were measured and compared to analyze the characteristics of LTCC-COB package LED lamp with SMD-PCB package LED lamp. EL peak intensity of LTCC-COB package LED lamp is 1.75 times better than that of SDM-PCB package LED lamp. The thermal resistance between packing area and air was found to be 7.3 K/W and 7.9 K/W for LTCC-COB package and SMD-PCB package respectively. The proposed LTCC-COB packaged LED lamp is not only suitable for high power LED package due to its low thermal resistance but also a promising solution for illumination modules.     

The effect of spherical aberration on temperature distribution inside glass by irradiation of a high repetition rate femtosecond pulse laser

In this paper, we study the effect of spherical aberrations on the light intensity and the temperature distribution in the focal region in a 250-kHz femtosecond laser irradiated Ag⁺-doped borosilicate glass. When a focused beam goes through an interface between air and glass, spherical aberration will result in the separation of the focal point and then cause a clear change of the light intensity distribution along the incident direction. That phenomenon will further influence the longitudinal cross-section temperature distribution in glass. Here we use Ag nanoparticle formation as a marker for establishing temperature distribution and we find that the formation of nanoparticle shows a strong dependence on the temperature field and the detailed precipitation process is also discussed.