Spatial distribution of spin polarization in a channel on the surface of a topological insulator

We study the spatial distribution of electron spin polarization for a gate-controlled T-shaped channel on the surface of a three-dimensional topological insulator (3D TI). We demonstrate that an energy gap depending on channel geometry parameters is definitely opened due to the spatial confinement. Spin surface locking in momentum space for a uniform wide channel with Hamiltonian linearity in the wavevector is still kept, but it is broken with Hamiltonian nonlinearity in the wavevector, like that for two-dimensional surface states widely studied in the literature. However, the spin surface locking for a T-shaped channel is broken even with Hamiltonian linearity in the wavevector. Interestingly, the magnitude and direction of the in-plane spin polarization are spatially dependent in all regions due to the breaking of translational symmetry of the T-shaped channel system. These interesting findings for an electrically controlled nanostructure based on the 3D TI surface may be testable with the present experimental technique, and may provide further understanding the nature of 3D TI surface states.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.     

Spin-resolved edge states transport in a normal/ferromagnetic/normal topological insulator junction: The role of interface

The spin-resolved edge states transport in a normal/ferromagnetic/normal topological insulator (TI) junction is investigated numerically. It is shown that the transport properties of the hybrid junction strongly depend on the interface shape. For the junction with two sharp interfaces, a nonzero spin conductance can be generated besides the spin-split energy windows. Moreover, the axial symmetries of the in-plane spin conductance amplitude are broken. The underlying physics is attributed to the sharp-interface-induced quantum interference effect. However, for the hybrid junction with two smooth interfaces, a non-zero spin conductance can only be achieved in the spin-split energy windows. Further, the axial symmetries of the in-plane spin conductance amplitude recover. These findings may not only benefit to further apprehend the spin-dependent edge states transport in the hybrid TI junctions but also provide some theoretical bases to the application of the topological spintronics devices.     

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.     

Spin-plasmons in topological insulator

Collective plasmon excitations in a helical electron liquid on the surface of strong three-dimensional topological insulator are considered. The properties and internal structure of these excitations are studied. Due to spin-momentum locking in helical liquid on a surface of topological insulator, the collective excitations should manifest themselves as coupled charge- and spin-density waves.     

Nonlocal transport properties of topological insulator F/I/SC/I/F junction with perpendicular magnetization

We investigate theoretically the nonlocal transport properties in a ferromagnet/insulator/superconductor/insulator/ferromagnet (F/I/SC/I/F) junction with perpendicular magnetization formed on a topological insulator. The nonlocal conductance through the junction depends strongly on whether the perpendicular magnetizations of the two ferromagnets are in a parallel or an antiparallel alignment. This stems from the fact that on the surface of three dimensional topological insulator the exchange field acts as vector potential and from spin-momentum locking property of the topological insulator surface states. It is found that the nonlocal conductance as a function of barrier strength of the I regions exhibits a quantum switch on-off property.     

超构材料中的光学量子自旋霍尔效应

电子的量子自旋霍尔效应的发现推进了当今凝聚态物理学的发展,它是一种电子自旋依赖的具有量子行为的输运效应.近年来,大量的理论和实验研究表明,描述电磁波场运动规律的麦克斯韦方程组内禀了光的量子自旋霍尔效应,存在于界面的倏逝波表现出强烈的自旋与动量关联性.得益于新兴的光学材料:超构材料(metamaterials)的发展,不仅能够任意设定光学参数,同时也能引入很多复杂的自旋-轨道耦合机理,让我们能够更加清晰地了解和验证其中的物理机理.本文对超构材料中量子自旋霍尔效应做了简要的介绍,内容主要包括真空中光的量子自旋霍尔效应的物理本质、电单负和磁单负超构材料能带反转导致的不同拓扑相的界面态、拓扑电路系统中光量子自旋霍尔效应等.     

Spin injection from topological insulator tunnel-coupled to metallic leads

We study theoretically helical edge states of 2D and 3D topological insulators (TI) tunnel-coupled to metal leads and show that their transport properties are strongly affected by contacts as the latter play a role of a heat bath and induce damping and relaxation of electrons in the helical states of TI. A simple structure that produces a pure spin current in the external circuit is proposed. The current and spin current delivered to the external circuit depend on relation between characteristic lengths: damping length due to tunneling, contact length and, in case of 3D TI, mean free path and spin relaxation length caused by momentum scattering. If the damping length due to tunneling is the smallest one, then the electric and spin currents are proportional to the conductance quantum in 2D TI, and to the conductance quantum multiplied by the ratio of the contact width to the Fermi wavelength in 3D TI.     

In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts

We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n⁺-GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. The uniaxial component of the registered anisotropies, observed along [1 1 0] directions, does switch its sign as an effect of the applied bias, however the switching occurs at different bias values for magnetoresistance and for spin polarization cases.     

Spin dynamics in magnetic semiconductor nanostructures

The studies of the magnetic and electrical transport properties of ordered magnetic semiconductor nanostructures have been generalized. This new area lies at the intersection of nanotechnologies and fundamental problems of magnetism. The prospects for application of ferromagnetic semiconductors in spintronics have been discussed. A comparative analysis of the magnetic and electrical transport properties of nanowires, thin films, and bulk elemental semiconductors doped with transition metals has been performed. The influence of size effects on the spin dynamics, magnetization, and magnetoresistance of nanostructures has been considered.     

Circular Photogalvanic Effect in the Weyl Semimetal TaAs

Weyl semimetal(WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. The generation of a sizable photocurrent is predicted in non-centrosymmetric WSM arising from the broken inversion symmetry and the linear energy dispersion that is unique to Weyl systems. In our recent measurements, the circular photogalvanic effect(CPGE) is discovered in the TaAs WSM. The CPGE voltage is proportional to the helicity of the incident light, reversing direction if the radiation helicity changes handedness, a periodical oscillation therefore appears following the alteration of light polarization. We herein attribute the CPGE to the asymmetric optical excitation of the Weyl cone, which could result in an asymmetric distribution of photoexcited carriers in momentum space according to an optical spin-related selection rule.     

Large magnetoresistance and perfect spin filter effect in Fe doped SnS2 half-metallic monolayers: A first principles study

In this work, the spin-resolved transport properties of the Fe doped SnS₂ monolayer devices have been investigated. The results show that the doping systems have the transport properties of negative differential resistance, large magnetoresistance effect and near 100% spin polarization effect when the magnetization directions of two electrodes are in parallel. Moreover, the mechanisms for the properties also have been discussed. The original reason of these results could be due to the half-metallic of the doping system. Our results imply that Fe doped SnS₂ monolayer is a promising candidate for the future spintronic devices.     

Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.     

Magnetically confined states and transport property on the surface of a topological insulator

We study the electronic structure and transport for a quasi-one-dimensional channel constructed via two ferromagnetic (FM) stripes on the surface of a three-dimensional (3D) topological insulator (TI) in parallel (P) or antiparallel (AP) magnetization configuration along the vertical z$z$-direction. We demonstrate that the confined states which are localized inside the channel always exist due to the magnetic potential confinement. Interestingly, the channel is metallic because of the existence of a topologically protected gapless chiral edge mode in the case of AP configuration. The asymmetric spatial-distribution of both electron probability density and in-plane spin polarization for the confined states implies that in the case of P configuration there exists a chiral state near the channel edge owing to the Hamiltonian inversion symmetry broken in real space, while the distributions in AP case are always symmetry since the inversion symmetry is still kept. Furthermore, the transmission probability and the spatial-dependent distributions of charge and spin along a narrow–wide–narrow channel on the surface with P configuration confinement are also calculated, from which a fully in-plane spin-polarized electron output is achieved. Along with the mathematical analysis we provide an intuitive, topological understanding of these effects.     

Higher-Order Topological Spin Hall Effect of Sound

We theoretically propose a reconfigurable two-dimensional(2 D) hexagonal sonic crystal with higher-order topology protected by the six-fold,C_6,rotation symmetry.The acoustic band gap and band topology can be controlled by rotating the triangular scatterers in each unit cell.In the nontrivial phase,the sonic crystal realizes the topological spin Hall effect in a higher-order fashion:(i) the edge states emerging in the bulk band gap exhibit partial spin-momentum correlation and are gapped due to the reduced spatial symmetry at the edges.(ii) The gapped edge states,on the other hand,stabilize the topological corner states emerging in the edge band gap.The partial spin-momentum correlation is manifested as pseudo-spin-polarization of edge states away from the time-reversal invariant momenta,where the pseudospin is emulated by the acoustic orbital angular momentum.We reveal the underlying topological mechanism using a corner topological index based on the symmetry representation of the acoustic Bloch bands.     

Can spin-polarized photoemission measure spin properties in condensed matter?

Photoemitted electrons move in a vacuum; their quantum state can be completely characterized in terms of energy, momentum and spin polarization by spin-polarized photoemission experiments. A review article in this issue by Heinzmann and Dil (2012 J. Phys.: Condens. Matter 24 173001) considers whether the measured spin properties, i.e. the magnitude and direction of the spin polarization vector, can be traced back to the quantum state from which these electrons originate. The careful conclusion is that they can, which is highly relevant in view of the current interest in these experiments and their application to topological insulators, where the spin-orbit interaction produces spin-polarized surface states.     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.     

Spin-polarized transport in zigzag graphene nanoribbons adsorbing nonmagnetic atomic chain

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (P) configuration can be much bigger than that at the antiparallel (AP) configuration. Compared P with AP configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for P configuration but can dramatically suppress the conductance of carriers for AP configuration. This controllable electron transport implies anomalous magnetoresistance in this topological spin valve, which may contribute to the development of spintronics. In addition, there shows an existence of Fabry-Perot-like electron interference in our model based on the topological insulator, which does not appear in the same model based on the two dimensional electron gas.     

Direct measurement of the out-of-plane spin texture in the Dirac-cone surface state of a topological insulator

We have performed spin- and angle-resolved photoemission spectroscopy of Bi(2)Te(3) and present the first direct evidence for the existence of the out-of-plane spin component on the surface state of a topological insulator. We found that the magnitude of the out-of-plane spin polarization on a hexagonally deformed Fermi surface of Bi(2)Te(3) reaches maximally 25% of the in-plane counterpart, while such a sizable out-of-plane spin component does not exist in the more circular Fermi surface of TlBiSe(2), indicating that the hexagonal deformation of the Fermi surface is responsible for the deviation from the ideal helical spin texture. The observed out-of-plane polarization is much smaller than that expected from the existing theory, suggesting that an additional ingredient is necessary for correctly understanding the surface spin polarization in Bi(2)Te(3).     

稀土锰氧化物的低场磁电阻效应

具有庞磁电阻效应的掺杂稀土锰氧化物因为其高的自旋极化率和自旋极化输运行为而表现出显著的低场磁电阻效应。这一效应在氧化物自旋电子学中有着深远的潜在应用前景。本文综述了国内外近年来在锰氧化物低场磁电阻增强这一研究领域的进展和存在的一些问题。全文分三个部分，首先概述了基于自旋极化散射和自旋极化隧穿两种输运机制的磁电阻理论；然后重点介绍掺杂稀土锰氧化物低场磁电阻增强的主要研究进展，这些进展背后的基本物理图象是通过人为引入自旋无序介质形成自旋极化散射和自旋极化隧穿，从而增强其低场磁电阻；第三部分讨论了基于掺杂稀土锰氧化物的磁性隧道结制备和输运性质。本文最后提出了锰氧化物低场磁电阻增强研究应该关注的一些物理问题。