High‐temperature stability of suspended single‐layer graphene

We report in situ Joule heating on suspended single‐layer graphene in a transmission electron microscope (TEM). Thermally‐driven degradation of pre‐deposited nanoparticles on the membrane is monitored and used for local temperature estimation. By extrapolating the Joule heating power and temperature relation, we find that the suspended single‐layer graphene has exceptional thermal stability up to at least 2600 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Charge noise acting on graphene double quantum dots in circuit quantum electrodynamics architecture

We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot(DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/f-type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than-90 d Bm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than-90 d Bm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.     

Localized rapid heating process for precision chalcogenide glass molding

Precision glass molding is an important process for high volume optical fabrication. However, conventional glass molding is a bulk heating process that usually requires a long thermal cycle, where molding assembly and other mechanical parts are heated and cooled together. This often causes low efficiency and other heating and cooling related problems, such as large thermal expansion in both the molds and molded optics. To cope with this issue, we developed a localized rapid heating process to effectively heat only very small part of the glass. This localized rapid heating study utilized a fused silica wafer coated with a thin graphene layer to heat only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating heat on and near the coating. The feasibility of this process was validated by both experiments and numerical simulation. To demonstrate the advantages of the localized rapid heating, both localized rapid heating process and bulk heating process were performed and carefully compared. The uniformity and quality of the molded sample by localized rapid heating process was also demonstrated. In summary, localized rapid heating process by using graphene coated fused silica wafer was characterized and can be readily implemented in replication of micro scale chalcogenide glasses.     

Band gap opening in zigzag graphene nanoribbon modulated with magnetic atoms

The effects of magnetic atom on the band structure of zigzag-edged graphene nanoribbons are investigated by the density functional theory. The results show that for narrow zigzag-edged graphene nanoribbons, the band gap can be opened duo to the spin-up/spin-down charges being re-enriched on the edge sites. However, for the wide zigzag-edged graphene nanoribbons, a spin-up/spin-down half-metallic property can be observed. Moreover, it is found that the Seebeck coefficients in the narrow zigzag-edged graphene nanoribbons are reversed and enlarged, which provides a way to design novel thermoelectric device.     

Raman Spectroscopic Characterization of Graphene

Abstract

The recent progress using Raman spectroscopy and imaging of graphene is reviewed. The intensity of the G band increases with increased graphene layers, and the shape of 2D band evolves into four peaks of bilayer graphene from a single peak of monolayer graphene. The G band will blue shift and become narrow with both electron and hole doping, whereas the 2D band will blue shift with hole doping and red shift with electron doping. Frequencies of the G and 2D band will downshift with increasing temperature. Under compressed strain, the upshift of the G and 2D bands can be found. Moreover, the strong Raman signal of monolayer graphene is explained by interference enhancement effect. As for epitaxial graphene, Raman spectroscopy can be used to identify the superior and inferior carrier mobility. The edge chirality of graphene can be determined by using polarized Raman spectroscopy. All results mentioned here are closely relevant to the basic theory of graphene and application in nanodevices.     

Tunable and highly sensitive temperature sensor based on graphene photonic crystal fiber

Optical fiber temperature sensors have been widely employed in enormous areas ranging from electric power industry, medical treatment, ocean dynamics to aerospace. Recently, graphene optical fiber temperature sensors attract tremendous attention for their merits of simple structure and direct power detecting ability. However, these sensors based on transfer techniques still have limitations in the relatively low sensitivity or distortion of the transmission characteristics, due to the unsuitable Fermi level of graphene and the destruction of fiber structure, respectively. Here, we propose a tunable and highly sensitive temperature sensor based on graphene photonic crystal fiber (Gr-PCF) with the non-destructive integration of graphene into the holes of PCF. This hybrid structure promises the intact fiber structure and transmission mode, which efficiently enhances the temperature detection ability of graphene. From our simulation, we find that the temperature sensitivity can be electrically tuned over four orders of magnitude and achieve up to ～ 3.34×10^-3 dB/(cm·℃) when the graphene Fermi level is ～ 35 meV higher than half the incident photon energy. Additionally, this sensitivity can be further improved by ～ 10 times through optimizing the PCF structure (such as the fiber hole diameter) to enhance the light-matter interaction. Our results provide a new way for the design of the highly sensitive temperature sensors and broaden applications in all-fiber optoelectronic devices.     

Enhanced thermoelectric power in dual-gated bilayer graphene

The thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric-field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at a low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.     

Computer stability test for aluminum films heated on a graphene sheet

The behavior of single- and double-sided monatomic aluminum films on graphene heated from 300 to 3300 K is studied by the molecular dynamics method. Atoms of single-sided coating are preserved on graphene up to 3300 K, while atoms of double-sided coating leave graphene even at 1800 K; upon a further increase in temperature, this leads to an increase in the horizontal and vertical components of the self-diffusion coefficient. The stresses produced by vertical forces are found to be most significant in metallic films; these stresses almost disappear when temperature reaches 2300 K. The stresses in graphene, the highest of which are concentrated in the zone of formation of the metal film, substantially decrease upon heating.     

Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.     

Polarization‐independent absorption enhancement in a graphene square array with a cascaded grating structure

The polarization‐independent enhanced absorption effect of graphene in the near‐infrared range is investigated. This is achieved by placing a graphene square array on top of a dielectric square array backed by a two‐dimensional multilayer grating. Total optical absorption in graphene can be attributed to critical coupling, which is achieved through the combined effect of guided‐mode resonance with the dielectric square array and the photonic band gap with the two‐dimensional multilayer grating. To reveal the physical origin of such a phenomenon, the electromagnetic field distributions for both polarizations are illustrated. The designed graphene absorber exhibits near‐unity polarization‐independent absorption at resonance with an ultra‐narrow spectrum. Moreover, the polarization‐independent absorption can be tuned simply by changing the geometric parameters. The results may have promising potential for the design of graphene‐based optoelectronic devices.     

Features of the Temperature Dependence of Graphene Oxide Resistivity

The Raman spectra and the temperature dependence of the resistivity of graphene oxide grown upon continuous heating and cooling on a glass substrate is studied in air in the temperature interval of 300–550 K. It is established that the intensity of the D-peak falls relative to the G-peak, the maximum of which shifts toward lower frequencies in Raman spectra. Partial removal of oxygen-containing functional groups is accompanied by a reduction in resistivity from 5.6 × 10⁹ to 5.4 × 10⁹ Ω. In the temperature intervals of 300–350 K and 300–375 K, the resistivity is constant upon graphene oxide heating and cooling, respectively.     

Carbon interaction with rhodium surface: Adsorption, dissolution, segregation, growth of graphene layers

Carbon interaction with rhodium (111) surface has been studied by Auger electron spectroscopy in ultrahigh vacuum within a broad temperature interval of 300-1800 K. It has been shown that the graphene monolayer remains stable on the metal surface within a relatively narrow temperature interval of ～50 K below the carbonization point, and when heated above this point, graphene breaks up gradually by transferring first to the island state, and after that, to chemisorbed carbon “gas.“ As the temperature decreases, a stable multilayer graphite film forms.     

基于光子晶体异质结构的磁可调石墨烯多带吸收

石墨烯在光电子学领域具有广泛应用,但石墨烯的吸收率较低限制了其在某些方面的应用。为了改善单层石墨烯的吸收特性,在前人研究的基础上,设计了石墨烯和光子晶体异质结构构成的复合结构。利用4×4传输矩阵法研究了外磁场、费米能量和设计波长等参数对石墨烯吸收特性的影响。结果表明,所设计的光学结构使石墨烯既保持了原有的宽吸收带,还增加了数目可调的窄吸收带。由于考虑到磁光效应,石墨烯的吸收特性表现出一定的磁圆二色性。对于各吸收带,通常情况下左旋圆偏振光的吸收率要大于右旋圆偏振光的吸收率。但调节外磁场和费米能量,可使各吸收带具有99%以上的吸收,在一定的条件下,还可实现近完美的100%吸收。研究结果为光电子学领域中基于石墨烯的相关器件的设计提供了参考。     

Kondo quantum criticality of magnetic adatoms in graphene

We examine the exchange Hamiltonian for magnetic adatoms in graphene with localized inner shell states. On symmetry grounds, we predict the existence of a class of orbitals that lead to a distinct class of quantum critical points in graphene, where the Kondo temperature scales as TK∝|J-Jc|1/3 near the critical coupling Jc, and the local spin is effectively screened by a super-Ohmic bath. For this class, the RKKY interaction decays spatially with a fast power law ～1/R7. Away from half filling, we show that the exchange coupling in graphene can be controlled across the quantum critical region by gating. We propose that the vicinity of the Kondo quantum critical point can be directly accessed with scanning tunneling probes and gating.     

基于石墨烯的宽带全光空间调制器

提出了单层石墨烯包裹微纳光纤的全光空间调制.石墨烯作为可饱和吸收体包裹在通过二氧化碳激光器加热制备的微纳光纤上,当信号光沿着微纳光纤传输时部分光将以倏逝场的形式沿着微纳光纤表面传递,并与石墨烯产生作用被吸收.同时将波长为808 nm的抽运光从空间垂直入射到石墨烯包裹的微纳光纤处,依据石墨烯的优先吸收特性,通过抽运光控制石墨烯对信号光的吸收,实现了宽带全光空间调制.在1095 nm波长处获得最大调制深度约为6 dB,调制带宽约为50 nm,调制速率约为1.5 kHz.空间全光调制器具有输出信号光“干净”的特点.与传统石墨烯微纳光纤全光调制器相比,输出端不需要对抽运光进行光学滤波而直接获得已调信号.该复合波导全光空间调制器以更为灵活、高效的方式打开了微纳超快信号处理的大门.     

Intercalation of graphene on iridium with samarium atoms

Intercalation of graphene on Ir (111) with Sm atoms is studied by methods of thermal desorption spectroscopy and thermionic emission. It is shown that adsorption of samarium at T = 300 K on graphene to concentrations of N ≤ 6 × 10¹⁴ atoms cm^–2 followed by heating of the substrate leads to practically complete escape of adsorbate underneath the graphene layer. At N > 6 × 10¹⁴ atoms cm^–2 and increasing temperature, a fraction of adsorbate remains on graphene in the form of two-dimensional “gas” and samarium islands and are desorbed in the range of temperatures of 1000–1200 K. Samarium remaining under the graphene is desorbed from the surface in the temperature range 1200–2150 K. Model conceptions for the samarium–graphene–iridium system in a wide temperature range are developed.     

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied.It includes the discharge time-accumulating heating effect,discharge power,inter-electrode distance,and total gas flow rate induced heating effect.It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other.However,all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films,which will affect the properties of the materials with increasing time.This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed.Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon,it is proposed that the discharge power and the heating temperature should be as low as possible,and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.     

6H-SiC(0001)表面graphene逐层生长的分子动力学研究

利用经典分子动力学方法和模拟退火技术分析研究了6H-ＳiC（0001）表面graphene的逐层生长过程及其形貌结构特点．研究表明,经过高温蒸发表面硅原子后,6H-ＳiC（0001）表面的碳原子能够通过自组织过程生成稳定的局部单原子层graphene结构．这种过程类似于6H-ＳiC（0001）表面graphene的形成,其生长和结构形貌演化主要取决于退火温度和表面碳原子的覆盖程度． 研究发现,当退火温度高于1400K时,6H-ＳiC（0001）表面碳原子能形成局部的单原子层graphene结构．这一转变温 关键词： graphene 碳化硅 分子动力学     

Direct growth of graphene films without catalyst on flexible glass substrates by PECVD

A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed. The quality of the prepared graphene films is evaluated by scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, and electrochemical measurements. In a radio frequency(RF) power range of50 W–300 W, the graphene growth rate increases with RF power increasing, while the intensity ratio of D-to G-Raman peak(ID/IG) decreases. When the RF power is higher than 300 W, the ID/IGrises again. By optimizing experimental parameters of hydrogen plasma etching and RF power, the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency, good electrical conductivity, and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.     

电子枪功率与束宽对金属原子蒸气特性的影响

在原子法激光同位素分离工程中,电子枪加热金属铀产生的原子蒸气的密度、速度以及温度等宏观量分布特性是非常重要的参数.为了分析电子枪功率和束宽对原子蒸气密度、速度、温度、质量通量和速度分布等物理特性的影响,采用直接MonteCarlo方法用柱坐标模拟了铀原子平面蒸发动力学过程.在电子枪加热方式下,蒸发源温度场不均匀,而且温度场随电子枪功率和束宽变化.着重研究这种变化对蒸气各种物理特性的影响.模拟结果表明,电子枪功率越高,蒸气径向宏观漂移速度越大,蒸发量越大;电子束束宽越窄,蒸发量越大. 关键词： 金属蒸发 原子法激光同位素分离 直接MonteCarlo 电子枪