Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT) is compared with that of conventional high electron mobility transistor(HEMT) under direct current(DC) stress,and the degradation mechanism is studied. Under the channel hot electron injection stress, the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer, and that under the gate dielectric of the device. The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress, which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel. However, because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel, the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT. The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.     

Improvement of the Injection and Transport Characteristics of Electrons in Organic Light-Emitting Diodes by Utilizing a NaC1 N-Doped Layer

The injection and transport characteristics of electrons are enhanced by using sodium chloride （NaC1） as an n-type dopant doped into a 4, 7-diphnenyl-1, lO-phe-nanthroline （Bphen） electron-transporting layer, which improves the performance of organic light-emitting diodes （OLEDs）. Meanwhile, a NaCl-doped Bphen layer can effectively influence electrical characteristics of the devices, and significantly improve the current and power efficiency. The turn-on voltage and the operation voltage of the optimal device are decreased drastically from 6.5 V and 10.8 V to 3.3 V and 5 V, respectively, compared with those of the reference device. The maximum current efficiency and power efficiency of the optimal device are 7.0 cd/A and 4.4 Im/W at the current density of 16.70 mA/cm~, which are about I. 7 and 4 times higher than those of the reference device, respectively. Moreover, the enhancement of the injection and transport ability for electrons is attributed not only to the reduced energy barrier between A1 cathode and Bphen, but also to the increased mobility of electrons by the doping effect of NaCl. Therefore, both the electron injection and transport ability are enhanced, which improve the carrier balance in OLEDs and lead to the better device efficiency.     

Fast Electron Spatial Temperature Distribution Studied by X-Ray 2D Imaging

We present the experimental and numerical results of two-dimensional x-ray imaging due to fast electron transport in a solid target. A 40-μm-thick copper film target is irradiated by a lOOm J, 50rs normal incident laser pulse. The full width at half maximum of the x-ray photon dose is 25 μm, and the divergence angle of fast electrons is 25°-30°, which is detected by the pin-hole x-ray imaging technique. The target surface plasma layer is compressed by a ponderomotive force into a depth of 0.2λ. The plasma wave accompanied by fast electrons transporting into the target is studied by dividing the plasma into layers in a radial direction. A narrow fast electron channel, which is approximately 8 μm-10 μm in width, mainly contributes to the x-ray dose.     

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.     

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.     

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.     

Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires

We investigate the effects of pre-stress and surface tension on the electron–acoustic phonon scattering rate and the mobility of rectangular silicon nanowires.With the elastic theory and the interaction Hamiltonian for the deformation potential,which considers both the surface energy and the acoustoelastic effects,the phonon dispersion relation for a stressed nanowire under spatial confinement is derived.The subsequent analysis indicates that both surface tension and pre-stress can dramatically change the electron–acoustic phonon interaction.Under a negative(positive)surface tension and a tensile(compressive)pre-stress,the electron mobility is reduced(enhanced)due to the decrease(increase)of the phonon energy as well as the deformation-potential scattering rate.This study suggests an alternative approach based on the strain engineering to tune the speed and the drive current of low-dimensional electronic devices.     

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

In this study, we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si) as a charge trapping layer. The memory device is fabricated on a N~+–Si/SiO_2 substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing(P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio(Ion/Ioff ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm~2·V~(-1)·s~(-1) and 102, respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.     

Mobility enhancement of strained GaSb p-channel metal oxide semiconductor field-effect transistors with biaxial compressive strain

Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-effect transistors(MOSFETs)are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm~2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain.Meanwhile, first principles calculations show that the hole effective mass of Ga Sb depends on the biaxial compressive strain.The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.     

Improved performance of P3HT：PCBM solar cells by both anode modification and short-wavelength energy utilization using Tb（aca）3phen

The performance of P3HT:PCBM solar cells was improved by anode modification using spin-coated Tb(aca)3phen ultrathin films. The modification of the Tb(aca)3phen ultrathin film between the indium tin oxide(ITO) anode and the PEDOT:PSS layer resulted in a maximum power conversion efficiency(PCE) of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density(Jsc). The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb(aca)3phen with its strong down-conversion luminescence properties is suitable for the P3HT:PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphology of P3HT:PCBM films were improved with the Tb(aca)3phen ultrathin film. The ultraviolent–visible absorption spectra,atomic force microscope(AFM), and X-ray diffraction(XRD) of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb(aca)3phen in P3HT:PCBM solar cells led to about a 12% PCE increase.     

Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors

An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal–oxide–semiconductor field-effect transistor(MOSFET), in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-oninsulator(SOI) MOSFETs.     

Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition

Annealing effects on structural and compositional performances of Al_2O_3 thin films on 4H–Si C substrates are studied comprehensively. The Al_2O_3 films are grown by atomic layer deposition through using trimethylaluminum and H_2 O as precursors at 300?C, and annealed at various temperatures in ambient N_2 for 1 min. The Al_2O_3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750?C to 768?C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy(XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.     

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.     

Non-monotonic dependence of current upon i-width in silicon p–i–n diodes

Silicon p–i–n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.     

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

A tunnel field-effect transistor(TFET) is proposed by combining various advantages together, such as non-uniform gate–oxide layer, hetero-gate-dielectric(HGD), and dual-material control-gate(DMCG) technology. The effects of the length of non-uniform gate–oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency,transit time, and transconductance frequency product. Moreover, the length of non-uniform gate–oxide layer and dualmaterial control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.     

Comparative Study of Activity of Different Agings of Aluminum Nanopowders

The structure and activity of aluminum nanopowders with a 3nm oxide layer on their surface （3-nm-OLA） and 30nm oxide layers on their surface （30-nm-OLA） are investigated comparably under the same normal incident shock wave intensity. Their corresponding reaction products are characterized by x-ray diffraction, high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The spectrum of x-ray diffraction shows that there are different phases of alumina in their products, which evidences directly the different reacting temperature in the shock tube. The x-ray photoelectron spectroscopy reveals that the oxide layer thickness is 30 nm on the product surface of 30-nm-OLA, while it is only 3 nm on 3-nm-OLA. Images of transmission electron microscopy present additional evidence that the agglomeration mechanism is over sintering one in the containing-30-nm-OLA system, the reversed mechanism is observed in the containing-3-nm-OLA reaction system.     

Effect of CuPc and MoO_3 co-evaporated layer on the conductivity of organic light emitting diodes

Devices with copper phthalocyanine(CuPc):molybdenum trioxide(MoO3) co-evaporated layer were fabricated and the current–voltage(I–V) and capacitance–voltage(C–V) characteristics were measured. It has been found that for a given voltage, the current of the device with a co-evaporated layer is higher than those without the co-evaporated layer and it reaches the highest value if the ratio of MoO3 to CuPc is 1:1. Meanwhile, the C–V characteristics showed that only free holes exist in the function layer consisting of pure CuPc. However, charge transfer(CT) complexes exist in the function layer of a CuPc:MoO3 mixture. The charge transfer complexes do not contribute to the transport of the device efficiently under low applied fields but are disassociated into free carriers rapidly at applied fields higher than 1.7×105V/cm, which greatly increases the conductivity.     

Effects of trapped electrons on off-axis lower hybrid current drive in tokamaks

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.[第一段]     

Quantum state transfer via a hybrid solid–optomechanical interface

We propose a scheme to implement quantum state transfer between two distant quantum nodes via a hybrid solid–optomechanical interface. The quantum state is encoded on the native superconducting qubit, and transferred to the microwave photon, then the optical photon successively, which afterwards is transmitted to the remote node by cavity leaking,and finally the quantum state is transferred to the remote superconducting qubit. The high efficiency of the state transfer is achieved by controllable Gaussian pulses sequence and numerically demonstrated with theoretically feasible parameters.Our scheme has the potential to implement unified quantum computing–communication–computing, and high fidelity of the microwave–optics–microwave transfer process of the quantum state.