Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range

The influences of reducing the supply voltage on single event upset(SEU)and multiple-cell upset(MCU)in two kinds of 65-nm static random access memories(SRAMs)ar...     

14 nm FinFET和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比

使用中国散裂中子源提供的宽能谱中子束流,开展14 nm FinFET工艺和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比研究,发现相比于65 nm器件,14 nm FinFET器件的大气中子单粒子翻转截面下降至约1/40,而多位翻转比例从2.2%增大至7.6%,源于14 nm FinFET器件灵敏区尺寸(80 nm×30 nm×45 nm)、间距和临界电荷(0.05 fC)的减小.不同于65 nm器件对热中子免疫的现象,14 nm FinFET器件中M0附近10B元素的使用导致其表现出一定的热中子敏感性.进一步的中子输运仿真结果表明,高能中子在器件灵敏区中产生的大量的射程长、LET值大的高Z二次粒子是多位翻转的产生诱因,而单粒子翻转主要来自于p,He,Si等轻离子的贡献.     

Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool

In this paper, a simulation tool named the neutron-induced single event effect predictive platform(NSEEP~2) is proposed to reveal the mechanism of atmospheric neutron-induced single event effect(SEE) in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory(SRAM) device can be considered to calculate the real-time soft error rate(RTSER) in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP~2, RTSERs of 90 nm–32 nm silicon on insulator(SOI) and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.     

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.     

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.     

Investigation of flux dependent sensitivity on single event effect in memory devices

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer(LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.     

Simulation of the characteristics of low-energy proton induced single event upset

Monte Carlo simulation results are reported on the single event upset (SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory (SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets (MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.     

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

The influences of total ionizing dose(TID) on the single event effect(SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset(SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate(FG) cells after heavy ion irradiation are observed.Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer(LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling(mTAT) path across the tunnel oxide.     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位，一般采用Mott-Rutherford微分散射截面，但它没考虑核外电子库仑屏蔽的影响.为此，本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL，SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的，同时考虑库仑     

Form factor dependence of proton induced deuteron breakup at low energy

Proton induced deuteron breakup has been studied experimentally and theoretically. The precision of the data makes it possible to distinguish between calculations made with different separable two-body forces. The possibility to observe off-shell effects and three-body forces is discussed.     

Dependence of the knock-on electron cross-section on muon energy in high,medium and low Z elements

Using the recent experimental results of various authors the dependence of the knock-on electron cross-section on primary muon energy has been studied in detail. It is found that the knock-on production cross-section increases with primary muon energy upto at least 32 GeV in accordance with Bhabha's theory for energy transfers greater than 15 MeV.     

Dependence of F-center accumulation in NaCl crystals on the proton beam intensity

The manifold of dependences of the radiation defect yield on the radiation intensify is explained from a single viewpoint. It is assumed that the form of such dependences is determined by the relationship between the relaxation times of processes in the particle tracks and the time of overlapping of the tracks. The existence of an optimal intensity at which the defect yield is a maximum is predicted. It is shown that processes having a relaxation time of the order of 10 sec play an essential part in F-center accumulation in the slow stage at 295 °K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 27–31, November, 1971.     

On the sensitivity of low energy weak interactions to large mass scales

It is discussed how known phenomenology from kaon, hyperon, charm and bottom decays makes it unlikely (though not impossible) that new states as suggested by composite models — namely spin zero partners ofW bosons or colour octet bosons — exist with a mass less than 1 TeV.     

Dependence of resonance energy transfer on exciton dimensionality

We investigate the dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on exciton dimensionality. We exploit the excitonic potential disorder in a single quantum well to tune the balance between localized and free excitons by scaling the Boltzmann distribution of excitons through temperature. Theoretical calculations predict the experimentally observed temperature dependence of resonance energy transfer and allow us to quantify the contribution of localized and free excitons. We show that free excitons can undergo resonance energy transfer with an order of magnitude higher rate compared to localized excitons, emphasizing the potential of hybrid optoelectronic devices utilizing resonance energy transfer as a means to overcome charge transfer related limitations.     

Dependence of target yield on input energy profile

Inertial confinement fusion using light ion beams that require longitudinal bunching imply ions whose energy increases with time. Such profiling of the incident ion beam energy could be expected to result in improved yields and better hydrodynamic coupling. These expectations have been confirmed by numerical simulations.     

卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析

为了分析单粒子事件对卫星光通信系统造成的影响,需要预估器件的单粒子翻转率。通过比较微分能谱方法和FOM方法,选取FOM方法估算了在不同高度和不同倾角下的单粒子翻转率。分析了质子单粒子翻转率与空间轨道的关系。提出了基于单粒子翻转率的器件可靠性指标。数值计算结果表明,在较低轨道高度和较小轨道倾角条件下,SRAM/MOS器件受单粒子翻转影响较小、可靠性较高。     

The elastic scattering of proton on proton at an energy of 8 GeV

The paper describes the measurement of the differential cross-section for pp scattering at an energy of 8 GeV. The results of the paper agree well with the assumption that there exists a real part of the scattering amplitude that is 33% of the imaginary part.     

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up(SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset(MCU) is the parasitic bipolar amplification,it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse.Finally, we use the electric static discharge(ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.     

脉冲宽度对准单能质子能量的影响

使用1维粒子模拟程序LPIC+模拟了不同脉冲宽度的P极化超短强激光脉冲与稠密冷等离子体靶的相互作用.模拟结果表明:激光有质动力首先推动表层等离子体形成无碰撞激波,然后激波向靶内传播,俘获靶内的质子并将其反射加速,反射质子的速度约为离子声速的2倍.当使脉冲宽度与靶厚互相匹配时,也就是靶厚等于离子声速与激光脉冲宽度的乘积时...