Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

JETP Letters - The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that...     

Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

The dependence of perpendicular magnetic anisotropy(PMA) on the barrier layer MgO thickness in MgO/CoFeB/Ta multilayers is investigated.The results show that the strongest PMA occurs in a small window of about2-4nm with the increase of MgO thickness from l-10 nm.The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers.Moreover,the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8nm,respectively,and both the samples show PMA.These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.     

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance(TMR),different structures of magnetic tunnel junctions(MTJs) are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy,a physical property measurement system,x-ray photoelectron spectroscopy,and transmission electron microscopy.The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface,which occurs in CoFeB/MgO/CoFeB MTJs.The inherent properties of the CoFeB/MgO/CoFeB,CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions.The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs.Based on the experimental results and theoretical analysis,it is believed that in CoFeB/MgO/CoFeB MTJs,the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR,and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation,and then increasing TMR.     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

CoFeB/MgO不连续多层纳米软磁薄膜微波电磁特性

采用直流/射频磁控溅射方法和不连续多层交替沉积工艺,制备了CoFeB/MgO系列纳米不连续多层薄膜,研究了微波频段下的电磁性能.结果表明,通过调整CoFeB合金相和MgO介质相的相对含量可有效调控薄膜的微结构和电磁性能,且在［Co₆₄Fe₂₄B₁₂(0.7nm)/MgO(0.4nm)］₄₀薄膜中获得了优良的微波软磁性能和高电阻率,其饱和磁化强度1.3 T,难轴矫顽力130 A/m,电阻率3.4mΩ·cm,且共振频率高达2.1 GHz,磁导率实部μ′和虚部μ″在1.59 GHz处均高于240,并且在0.9—2 GHz宽频带范围同时大于100.该薄膜可用于微波吸收材料和电磁兼容的设计中. 关键词： 纳米磁性颗粒膜 磁导率频谱 电磁性能 吸波材料     

Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures

The planar Hall effect (PHE) in W/CoFeB/MgO structure with perpendicular magnetic anisotropy was investigated as a function of CoFeB thickness (t_CoFeB). The PHE is measured by sweeping the in-plane magnetic field at various azimuthal angles as well as by rotating strong magnetic field which is enough to saturate the magnetization. We observed a huge PHE in the W/CoFeB/MgO sample, which is even larger than anomalous Hall effect (AHE). This is distinct from the results in Ta/CoFeB/MgO samples showing a much smaller PHE than AHE. Since the PHE is insensitive to the t_CoFeB while the AHE is proportional to the t_CoFeB, the unprecedented PHE can be attributed to the W layer with a large spin-orbit coupling.     

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented.The samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm.The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm~3 and 3.75 erg/cm~2,respectively.The magnetic dead layer(MDL) is about 0.23 nm in this system.Furthermore,strong capping layer thickness dependence is also observed.The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm.To maintain PMA,the metal layer could not be too thin or thick in these multilayers.The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.     

Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures

We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (V_g) exceeds a critical value, and it persists even after removing V_g. This is in contrast to the volatile VCMA effect and its linear dependence on V_g in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.     

Tuning exchange coupling by replacing CoFe with amorphous CoFeB in the CoFe/Ru/CoFe synthetic antiferromagnetic structure

We studied exchange coupling in the CoFe/Ru/CoFe synthetic antiferromagnetic structure with systematical replacement of the crystalline CoFe with amorphous CoFeB. Antiferromagnetic exchange coupling intensity decreases with an increase in the replacement in the bottom magnetic layer, which indicates that exchange coupling intensity could be tuned by the replacement. The origin of weakening antiferromagnetic exchange coupling is attributed to the amorphous CoFeB replacement inducing incomplete crystallization and disordered orientation in the Ru layer.     

Ferromagnetic resonance in monocrystalline spin valves CoFeB/Ta/CoFeB and CoFeB films with perpendicular magnetic anisotropy

Orientation dependences of ferromagnetic resonance in a MgO/CoFeB/MgO/Ta film with one ferromagnetic layer (monolayer) and in a MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve containing two single-crystal ferromagnetic CoFeB layers divided by a nonmagnetic Ta layer (bilayer) were investigated. Analysis of the orientation dependences of the structures with perpendicular magnetic anisotropy allowed calculating constants of magnetic anisotropy and damping factors. Physical reasons underlying the differences between these parameters in one- and two-layered structures are discussed.     

Atomic and electronic structure of steps and kinks on MgO(100) and MgO(110)

The electronic and atomic structure of vicinal MgO surfaces are studied using a quantum self-consistent method associated with a geometry optimization code. 10n, (n + 1)0n and n1n surfaces, with periodic monoatomic steps separating {001} or {101} terraces, are considered. Diatomic steps along the {10n} orientation and periodic kinks on the {3 1 10} surface are also modelled. We assign most electronic peculiarities of stepped surfaces to the values of the Madelung potential acting on the under-coordinated atoms, which is a function of their first and second coordination numbers. An analytical model is proposed to explain the bond contractions around these atoms. Finally the microscopic contributions to the step energy are discussed, together with the strength of the step interaction as a function of their separation.     

X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of −12.7 fJ/Vm and −8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.     

Microwave response to the magnetization switching of CoFeB/Ta/CoFeB spin valves and CoFeB films

Negative magnetoresistance modifying the quality factor of a microwave cavity under the magnetization switching of ferromagnetic layers has been discovered in a MgO/CoFeB/MgO/Ta film with a single ferromagnetic layer and a MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve consisting of two ferromagnetic CoFeB layers. The dependence of the first derivative dP/dH of the microwave absorption signal on the dc magnetic field of the spectrometer exactly reproduce the magnetic hysteresis loops of the sample. The slope of these dependences and the amplitude of dP/dH jumps under remagnetization of the layers are determined by the interplay of a negative magnetoresistance of individual layers and a positive giant magnetoresistance of the entire multilayer structure. The discovered phenomenon allows using microwave absorption for making a high-sensitivity contact-free indicator of the basic magnetization states of a spin valve.     

Impact of interface geometric structure on organic–metal interface energetics and subsequent films electronic structure

We present the electronic structure of various pentacene thin films grown on Au(1 1 1), Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces studied by angle-resolved ultraviolet photoemission spectroscopy using synchrotron radiation. A systematic variation of the metal surface such as the substrate metal and its surface symmetry allows a comprehensive discussion on the correlation between the electronic structure and the interface geometric structure. In the monolayer regime, we observed the evidence of the formation of the organic–metal interface state depending on the metal surface, i.e., the interface geometric structure. This evidence is explained by the different organic–metal and intermolecular interactions, which originate from the hybridization of the molecular orbitals with the metal wavefunction. These interface geometric and electronic phenomena can be a seed for the subsequent film growth and resultant films electronic structure.     

The electronic structure of Si/GaP(110) interface and superlattice

It is argued that the (110) interface between group IV and III–V semiconductors are more likely to lend themselves to fabrication via MBE techniques. Results for the electronic structure of Si-GaP(110) superlattice are reported for the first time. Both, interface states and two dimensionally confined states are found. Sensitivity of the energy and charge distribution of these states to the interfacial geometry and the band edge discontinuity is investigated. The results are contrasted with the situation found for lattice matched III–V compound semiconductor systems such as GaAs/AlAs and GaSb/InAs.     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

Strong coupling constant from the photon structure function

We extract the value of the strong coupling constant alpha(s) from a single-parameter pointlike fit to the photon structure function F(gamma)(2) at large x and Q(2) and from a first five-parameter full (pointlike and hadronic) fit to the complete F(gamma)(2)data set taken at PETRA, TRISTAN, and LEP. In next-to-leading order and the MS renormalization and factorization schemes, we obtain alpha(s)(m(Z))=0.1183+/-0.0050(expt)(+0.0029)(-0.0028)(theor) (pointlike) and alpha(s)(m(Z))=0.1198+/-0.0028(expt)(+0.0034)(-0.0046)(theor) (pointlike and hadronic). We demonstrate that the data taken at LEP have reduced the experimental error by about a factor of 2, so that a competitive determination of alpha(s) from F(gamma)(2) is now possible.     

Nuclear exchange coupling and electronic structure of low-dimensional semiconductors

We review the nuclear magnetic resonance (NMR) studies of the indirect nuclear exchange coupling and electronic structure of the chain and layered semiconductors Tl(I)M(III)X₂ (M = Tl, Ga, In, X = Se, S, Te) and some other low-dimensional Tl-contained semiconducting compounds. Both univalent and trivalent Tl atoms in these compounds show essential chemical shielding anisotropy despite their formal spherically symmetric 5d¹⁰6s² and 5d¹⁰ electron configurations. Such a behavior results from the sp-hybridization of the Tl electron wave functions. Strong exchange coupling among the spins of Tl¹⁺ and M³⁺ ions, which reside in neighboring chains or layers, is observed. Such coupling is realized due to the overlap of the Tl¹⁺ and M³⁺ electron wave functions across the intervening chalcogen atom. This overlap is the important mechanism in the formation of the valence and conduction bands and determines the electronic structure and properties of the compounds. The long-range indirect nuclear exchange coupling via a chalcogen atom is an analog of the Kramers mechanism of electron spin exchange via a nonmagnetic bridge ion. Recent photoemission spectroscopy studies and band-structure calculations of several aforementioned compounds have confirmed the NMR results on the interchain and interlayer overlap.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

Magnetization Reversal of Ferromagnetic CoFeB Films and CoFeB/Ta/CoFeB Heterostructures in the Stray Field of Fe/Fe3O4 Nanoparticles

Journal of Experimental and Theoretical Physics - The magnetization reversal of the MgO/CoFeB/Ta/CoFeB/MgO/Ta/GaAs heterostructures and the ultrathin MgO/CoFeB/MgO/Ta/GaAs films with a...