Characteristics of p-type ZnO:As thin films prepared by the ampoule-tube method and ZnO p–n homojunction

A p-type ZnO thin film was prepared using arsenic diffusion via the ampoule-tube method. This was followed by fabrication of a ZnO p–n homojunction using n-type ZnO and characterization of the device properties. The ZnO thin film exhibited p-type characteristics, with a resistivity of 2.19×10⁻³ Ω cm, a carrier concentration of 1.73×10²⁰/cm³, and a mobility of 26.7 cm²/V s. Secondary ion mass spectrometer analysis confirmed that in- and out-diffusion occurred simultaneously from the external As source and the GaAs substrate. The device exhibited the rectification characteristics of a typical p–n junction; the forward voltage at 20 mA was approximately 5.5 V. The reverse-bias leakage current was very low—0.1 mA for −10 V; the breakdown voltage was −11 V. The ampoule-tube method for fabricating p-type ZnO thin films may be useful in producing ultraviolet ZnO LEDs and other ZnO-based devices.     

Bulk crystal SiC blue LED with p–n homojunction structure fabricated by dressed-photon-phonon–assisted annealing

To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %.     

Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

We fabricated a heavily Bi-doped (x_Bi ≈ 2 × 10¹⁹ cm⁻³) PbTe p–n homojunction diode that detects mid-infrared wavelengths by the temperature difference method (TDM) under controlled vapor pressure (CVP) liquid phase epitaxy (LPE). The photocurrent density produced by the heavily Bi-doped diode sample is approximately 20 times and 3 times greater than that produced by an undoped and heavily In-doped sample, respectively. By varying the ambient temperature from 15 K to 225 K, the detectable wavelength is tunable from 6.18 μm to 4.20 μm. The peak shift of the detectable wavelength is shorter in the heavily Bi-doped sample than in the undoped sample, consistent with our previously proposed model, in which Bi–Bi nearest donor–acceptor pairs are formed in the heavily Bi-doped PbTe liquid phase epitaxial layer. Current–voltage (I–V) measurements of the heavily Bi-doped diode sample under infrared exposure at 77 K indicated a likely leak in the dark current, arising from the deeper levels. From the dark I–V measurements, the activation energy of the deep level was estimated as 0.067 eV, close to the energy of the deep Tl-doped PbTe acceptor layer. We conclude that the deep level originates from the Tl-doped p-type epitaxial layer.     

Electronic structures and optical properties of Ⅲ_A-doped wurtzite Mg_(0.25)Zn_(0.75)O

The energy band structures, density of states, and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O(IIIA= Al,Ga, In) are investigated by a first-principles method based on the density functional theory. The calculated results show that the optical bandgaps of Mg0.25Zn0.75O:IIIAare larger than those of Mg0.25Zn0.75 O because of the Burstein–Moss effect and the bandgap renormalization effect. The electron effective mass values of Mg0.25Zn0.75O:IIIAare heavier than those of Mg0.25Zn0.75 O, which is in agreement with the previous experimental result. The formation energies of MgZnO:Al and MgZnO:Ga are smaller than that of MgZnO:In, while their optical bandgaps are larger, so MgZnO:Al and MgZnO:Ga are suitable to be fabricated and used as transparent conductive oxide films in the ultra-violet(UV) and deep UV optoelectronic devices.     

Si(100)衬底上Mg_(0.33)Zn_(0.67)O薄膜的结构及光学性能

采用射频磁控溅射法在Si(100)衬底上制备了Mg_(0.33)Zn_(0.67)O薄膜,研究了Mg_(0.33)Zn_(0.67)O薄膜的结构和光学性能。结果表明,Si(100)衬底上Mg_(0.33)Zn_(0.67)O薄膜呈六方纤锌矿结构,薄膜沿c方向取向生长,且c轴方向晶格增大0.03 nm。薄膜呈现优异的半导体特性,激子吸收峰位于297 nm,禁带宽度约为4.3 eV。薄膜平均粒径约为20 nm。薄膜在深紫外激发下的荧光发射位于368 nm。     

I–V characteristics of ZnO/Cu2O thin film n–i–p heterojunction

ZnO/Cu₂O thin film n–i–p heterojunctions were fabricated by magnetron sputtering. The microstructure, optical, and electrical properties of n-type (n‐) ZnO, insulating (i‐) ZnO, and p-type (p‐) Cu₂O films deposited on glass substrates were characterized by X-Ray diffraction (XRD), spectrophotometer, and the van der Pauw method, respectively. XRD results show that the mean grain size of i-ZnO film is much larger than that of n-ZnO film. The optical band gap energies of n-ZnO, i-ZnO, and p-Cu₂O film are 3.27, 3.47, and 2.00 eV, respectively. The carrier concentration of n-ZnO film is two orders of magnitude larger than that of p-Cu₂O film. The current–voltage (I–V) characteristics of ZnO/Cu₂O thin film n–i–p heterojunctions with different i-ZnO film thicknesses were investigated. Results show that ZnO/Cu₂O n–i–p heterojunctions have well-defined rectifying behavior. All ideality factors of these n–i–p heterojunctions are larger than 2.0. The forward bias threshold voltage and ideality factor increase when i-ZnO layer thickness increases from 100 to 200 nm. An energy band diagram was proposed to analyze the I–V characteristics of these n–i–p heterojunctions.     

Rare-earth doped (Lu0.85Y0.15)2SiO5 nanocrystalline powders obtained by polymer assisted sol–gel synthesis

In the present work we explored the possibility of obtaining nanocrystalline (Lu_0.85Y_0.15)₂SiO₅ (LYSO) powders using polymer assisted sol–gel method. The synthesis started from TEOS as alkoxide precursor while polyethylene glycol with average molecular weight of 4000 was used as fuel. The resulting powders were obtained by firing gels in two ways: in conventional furnace and in microwave oven, with further annealing. This modified sol–gel synthetic route enabled production of pure phase LYSO powders at much lower temperatures (1050 °C) compared to classical, -solid-state methods (1400 °C). Crystallization kinetics are examined using differential thermal analysis, and rather low values of crystallization activation energies (around 12 kJ/mol) were found, revealing good potential of this method for low-temperature production of LYSO powder.     

梯度组分缓冲层诱导的单一立方相Mg_(0.3)Zn_(0.7)O薄膜外延生长

为了实现MgZnO合金带隙全跨度调制,利用低压MOCVD设备,在c面蓝宝石衬底上采用MgO籽晶层和组分渐变缓冲层控制立方相MgxZn1-xO薄膜的生长,获得了Zn组分达到0.7的单一立方相MgxZn1-xO薄膜,把MgZnO合金带隙调制范围从MgO一侧扩展到了4.45 eV,覆盖了整个日盲紫外波段。对比实验分析表明,这种高Zn组分立方相MgZnO薄膜的生长得益于缓冲层晶格模板的结构诱导作用和适宜的生长温度(350~400℃)。Mg0.3Zn0.7O基MSM结构紫外探测器响应峰位于270 nm,截止波长295 nm。     

Density functional theory study of Mg_2Ni_n(n= 1–8) clusters

The density functional theory B3PW91 with LANL2DZ basis sets has been used to study the possible geometries of Mg2Nin(n = 1–8) clusters. For the lowest energy structures of the clusters, stabilities, electronic properties, and natural bond orbital(NBO) are calculated and discussed. The results show that the doped Mg atoms reduce the stabilities of pure Ni clusters. The Mg2Ni2, Mg2Ni4, and Mg2Ni6clusters are more stable than neighboring clusters. The system appears magic number characteristics. In addition, the hybridization phenomenon occurs, owing to the interaction of Mg and Ni. The result of charge transfer is that Ni atom is negative and the Mg atom is positive. We also conclude that the 3p and 4d orbitals of the Ni atom have an effect on the stabilities of the clusters.     

U(1) and SU(2) quantum dissipative systems: the Caldeira–Leggett Versus Ambegaokar–Eckern–Schön approaches

There are two paradigmatic frameworks for treating quantum systems coupled to a dissipative environment: the Caldeira–Leggett and Ambegaokar–Eckern–Schön approaches. Here, we recall the differences between them and explain the consequences of applying each to a zero-dimensional spin (having an SU(2) symmetry) in a dissipative environment (a dissipative quantum dot near or beyond the Stoner instability point).     

The O(n) Loop Model on the 3–12 Lattice

The partition function of the O(n) loop model on the honeycomb lattice is mapped to that of the O(n) loop model on the 3–12 lattice. Both models share the same operator content and thus critical exponents. The critical points are related via a simple transformation of variables. When n = 0 this gives the recently found exact value = 1.711041... for the connective constant of self-avoiding walks on the 3–12 lattice. The exact critical points are recovered for the Ising model on the 3–12 lattice and the dual asanoha lattice at n = 1.     

Effects of electron–optical phonon interactions on the polaron energy in a wurtzite ZnO/Mg_xZn_(1-x)O quantum well

We investigated the properties of polarons in a wurtzite ZnO/MgxZn1-xO quantum well by adopting a modified Lee–Low–Pines variational method, giving the ground state energy, transition energy, and phonon contributions from various optical-phonon modes to the ground state energy as functions of the well width and Mg composition. In our calculations, we considered the effects of confined optical phonon modes, interface-optical phonon modes, and half-space phonon modes, as well as the anisotropy of the electron effective band mass, phonon frequency, and dielectric constant. Our numerical results indicate that the electron–optical phonon interactions importantly affect the polaronic energies in the ZnO/MgxZn1-xO quantum well. The electron–optical phonon interactions decrease the polaron energies. For quantum wells with narrower wells, the interface optical phonon and half-space phonon modes contribute more to the polaronic energies than the confined phonon modes. However, for wider quantum wells, the total contribution to the polaronic energy mainly comes from the confined modes. The contributions of the various phonon modes to the transition energy change differently with increasing well width. The contribution of the half-space phonons decreases slowly as the QW width increases, whereas the contributions of the confined and interface phonons reach a maximum at d ≈ 5.0 nm and then decrease slowly. However,the total contribution of phonon modes to the transition energy is negative and increases gradually with the QW width of d.As the composition x increases, the total contribution of phonons to the ground state energies increases slowly, but the total contributions of phonons to the transition energies decrease gradually. We analyze the physical reasons for these behaviors in detail.     

熔体旋甩法合成n型(Bi_(0.85)Sb_(0.15))_2(Te_(1-x)Se_x)_3化合物的微结构及热电性能

采用熔体旋甩结合放电等离子烧结(MS-SPS)技术制备了单相n型四元(Bi0.85Sb0.15)2(Te1-xSex)3(x=0.15,0.17,0.19,0.21)化合物,并对所得样品的微结构和热电传输性能进行了系统研究.样品自由断裂面的场发射扫描电子显微镜及抛光面的背散射电子成分分析表明:块体材料晶粒细小,晶粒排列紧密,成分分布均匀且相结构单一,样品中存在大量10—100nm的层状结构.随着Se含量x的增加,样品的电导率和热导率逐渐增加,而Seebeck系数逐渐降低.相比商业应用的区熔材料,MS-SPS方法合成的高Se组成的样品均在425K后表现出更高的ZT值,其中(Bi0.85Sb0.15)2(Te0.83Se0.17)3样品具有最高的ZT值,在360K可达到0.96,并在320—500K均保持较高的ZT值,500K时其ZT值相比区熔材料提高了48%.此外,通过调节Se的含量,可以有效地调控材料的ZT峰值出现的温度段,这对多级或梯度热电器件的制备具有重要意义.     

Nd_(1-x)Ba_xMnO_3和La_(0.67)Mg_(0.33)Mn_(0.85)M_(0.15)O_3(M=Mn,Ga,Fe)中Mn位自旋磁矩对电导性的影响

研究了Ｎｄ１－ｘＢａｘＭｎＯ３和Ｌａ０．６７Ｍｇ０．３３Ｍｎ０．８５Ｍ０．１５Ｏ３（Ｍ＝Ｍｎ，Ｇａ，Ｆｅ）的导电性，发现Ｍｎ位的自旋磁矩排列状态和大小对体系的导电性有强烈的影响．在Ｎｄ１－ｘＢａｘＭｎＯ３中，当Ｍｎ３＋／Ｍｎ４＋的浓度比值为２∶１，１∶１，１∶２时，电阻率出现半导体－金属转变．推论该类体系的导电性首先由体系中Ｍｎ３＋和Ｍｎ４＋自旋磁矩形成的磁结构状态决定，然后才取决于由Ｂａ掺杂浓度所决定的载流子浓度．在Ｌａ０．６７Ｍｇ０．３３Ｍｎ０．８５Ｍ０．１５Ｏ３（Ｍ＝Ｍｎ，Ｇａ，Ｆｅ）中，Ｍｎ位自旋磁矩大小的改变对导电性有强烈的影响，另外发现该类体系均以变程跳跃模式进行导电．     

Long-range Order Induced by Random Fields in Two-dimensional O(n) Models,and the Imry–Ma State

Physics of the Solid State - The influence of defects of the “random local field” type with an anisotropic distribution of random fields on two-dimensional models with continuous...     

High field ESR measurements of quantum antiferromagnetic chain substances BaCu2(Si1−xGex)2O7

High field ESR measurements of S=1/2 one-dimensional quantum antiferromagnetic (AF) system BaCu₂(Si_1−xGe_x)₂O₇ have been performed using powder samples and pulsed magnetic field. High field electron paramagnetic resonance at 352 GHz and 86 K enabled us to determine the x dependence of g-values even when we used the powder samples. The x dependence will be discussed in connection with the crystal field. Moreover, antiferromagnetic resonances of x=0 and x=1 samples below T_N were observed and their frequency–field relations suggest the existence of Dzyaloshinsky–Moriya interaction.     

用高压显微光谱系统研究(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体在流体静压力下施主-受主对的发光

用金刚石对顶砧高压显微光谱系统在室温和1bar—66kbar的流体静压力范围内研究了(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体的发光峰位置和相对发光强度随压力而变化的规律。随着压力的增加,发射峰值波长迅速移向短波方向,而发射峰值对应的光子能量随压力增加的速率为4.7meV/kbar(38cm~(-1)/kbar)。这个值比该材料的吸收边随压力增加的速率要小。随着压力的增加,该磷光体的发光峰值相对强度急骤下降,当压力从常压升到66 kbar时,发光峰值相对强度下降到原值的6％。这些结果可以用Al~(3 )-Cu~的施主-受主对模型来解释。本文还估计施主(Al~(3 )和受主(Cu~ )的激活能之和随压力增加的速率为 3.7meV/kbar(30cm~(-1)/kbar)。     

High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(0 1 3)

The characteristics of SWIR (1.6–3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA’s) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p–n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.